二维电子系统中磁场与微波辐照感应的“零电阻”态

受限于两种半导体界面之中的电子形成所谓二维电子气．二十几年来，半导体技术的发展促进了高纯二维电子气样品的制备，从而为固态物理的研究提供了广阔的空间。1980年和1982年的诺贝尔物理学奖分别被授予整数量子霍尔效应和分数量子霍尔效应的研究者，相关的实验都是针对二维电子气在磁场下的输运行为。     

复连通二维电子系统电阻量子化的理论解释

本文论证,单连通的二维电子体系,在低温、强磁场等条件下,其两端电阻精确地等于量子化霍耳电阻h/fe²,f为Landau填充因数。并以此为基础,解释了复连通二维电子系统的电阻量子化。 关键词：     

二维非晶光子材料的缺陷态

应用多重散射方法计算了二维介质柱构成的非晶光子材料的缺陷态。在非晶光子材料中抽掉不同位置的圆柱会产生频率不同的缺陷模，但缺陷模的能量都是非常局域的，能量基本上集中在以缺陷波长1／3为半径的圆内。这表明非晶光子材料中形成的缺陷模不仅具有周期性光子晶体的缺陷模的强局域化特征，同时缺陷模更富于变化。     

悬浮二维晶体材料反射光谱和光致发光光谱的周期性振荡现象

研究了在二氧化硅/硅衬底上制备的悬浮石墨烯以及二硫化钼的反射光谱以及悬浮二硫化钼的光致发光光谱.研究发现:悬浮多层石墨烯的反射光谱表现出明显的振荡现象,并且该振荡具有一定的周期性;振荡周期的大小不依赖于悬浮多层石墨烯的层数,而是随着衬底上沉孔深度(空气层厚度)的增加而减小.利用多重光学干涉模型可以解释这种振荡现象以及振荡周期随沉孔深度改变的变化趋势.该模型计算结果表明,只有当沉孔深度达到微米量级时这种振荡现象才会显著出现;并且可由振荡周期定量地确定出沉孔深度.对于悬浮的二硫化钼样品,其反射光谱和光致发光光谱也出现了类似的振荡现象.这表明这种振荡现象是在各种衬底上悬浮二维材料反射光谱和光致发光光谱的一种普遍性结果,也预示悬浮二维材料器件的电致发光光谱也会出现类似的振荡现象,对悬浮二维晶体材料的物理性质和器件性能研究具有一定的参考价值.     

窄禁带稀磁半导体二维电子气的磁阻振荡研究

通过改变温度和磁场方向对调制掺杂的n型Hg_0.82Cd_0.16Mn_0.02Te/Hg_0.3Cd_0.7Te第一类量子阱中磁性二维电子气磁阻拍频振荡进行了深入的研究，发现不仅温度的变化能够引起磁阻拍频节点位置的变化. 而且改变磁场方向，可以分别调整塞曼分裂和朗道分裂. 从对拍频的分析中，可以将依赖于磁场垂直方向的朗道能级分裂和依赖于整个磁场大小的塞曼分裂区分开来. 关键词： 磁性二维电子气 自旋分裂 塞曼分裂 拍频     

高品质因子和高传输效率的二维光子晶体耦合腔波导研究

基于时域有限差分方法,通过仿真计算设计了一种具有较高品质因子和传输效率的二维光子晶体耦合腔波导结构。通过改变二维光子晶体波导微腔结构中隔绝波导与微腔的空气孔的半径和数量,在获得近似90%的传输效率的同时,使得品质因子达到了8.20×104。为了使品质因子在大幅度提高的同时,传输效率只有小幅度的降低,在波导微腔结构中引入了链式微腔。将链式微腔结构与传统的波导微腔结构相结合,使这种新形式的耦合腔结构的品质因子提高了1个数量级,传输效率仅下降了约40%。     

GaN／A1xGal-xN异质结二维电子气的磁电阻研究

通过对GaN／A1xGa1-xN异质结中二维电子气磁输运结果的分析,研究了磁电阻的起因．结果表明,整个磁场范围的负磁电阻是由电子一电子相互作用引起的,而高场下的正磁电阻来源于平行电导的进一步修正．用拟合的方法得到了电子一电子相互作用项以及平行电导层的载流子浓度和迁移率,并用不同的计算方法对拟合结果进行了验证．     

基于二维光子晶体的宽带高吸收太阳能吸收器

具有宽带高吸收特性的吸收器是太阳能利用的关键.设计了一种含有抗反射层的基于二维光子晶体结构的太阳能吸收器,其中砷化镓(GaAs)作为吸收介质,被填充到具有四方晶格结构的二维光子晶体的钨(W)基底圆形空腔中.采用有限元法进行了模拟计算分析,结果表明,在300～2500 nm的波长范围内,吸收器的平均吸收率为92.5％,有...     

二维映射神经元模型中频率依赖的随机共振

通过数值模拟方法, 研究了在具有稳定次阈值振荡特性的二维映射神经元体系中, 噪声对体系非线性动力学的调控作用. 通过计算发现了噪声诱导的动作电位和随机共振现象. 另外,还研究了体系的控制参数及输入信号的频率对体系动力学的影响, 发现了该体系中频率依赖的随机共振现象. 关键词： 二维映射神经元模型 次阈值振荡 高斯白噪声 随机共振     

GaN/AlxGa1-xN异质结二维电子气的磁电阻研究

通过对GaN/Al_xGa_1-xN异质结中二维电子气磁输运结果的分析,研究了磁电阻的起因.结果表明,整个磁场范围的负磁电阻是由电子-电子相互作用引起的,而高场下的正磁电阻来源于平行电导的进一步修正.用拟合的方法得到了电子-电子相互作用项以及平行电导层的载流子浓度和迁移率,并用不同的计算方法对拟合结果进行了验证.     

Low-field magnetoresistance of strongly modulated two-dimensional electron gas

The typical form of the low-field magnetoresistance anomaly induced by a strong one-dimensional periodic modulation of the background potential is described. It is shown that the magnetoresistance peak due to the magnetic breakdown is always followed by a resistance increase at higher magnetic fields, for which οcτ > 1.     

Terahertz radiation-induced magnetoresistance oscillations of a high-density and high-mobility two-dimensional electron gas

The terahertz response of a high-density and high-mobility two-dimensional electron gas in 13-nm GaAs quantum wells at frequencies of 0.7 and 1.63 THz has been investigated. Terahertz radiation-induced magnetoresistance oscillations have been discovered. The oscillation maxima coincide with the harmonics of cyclotron resonance. It has been shown that a large number of harmonics (up to the ninth) appear under irradiation at a frequency of 0.7 THz. In this case, the effect is the analogue of microwave-induced oscillations. At a higher frequency, the oscillation amplitude decreases drastically with an increase in the harmonic number. This indicates a transition to the regime of ordinary cyclotron harmonics.     

Absolute negative conductivity and zero-resistance states in two-dimensional electron systems: A plausible scenario

We present a model that provides a plausible explanation of the effect of zero-resistance and zero-conductance states in two-dimensional electron systems subjected to a magnetic field and irradiated with microwaves observed in a number of experiments and of the effect’s main features. The model is based on the concept of absolute negative conductivity associated with photon-assisted scattering of electrons on impurities. It is shown that the main features of the effect can be attributed to the interplay of different electron scattering mechanisms.     

Fractional features in radiation-induced oscillations of the magnetoresistance of two-dimensional electron systems

The magnetoresistance of two-dimensional electron systems irradiated by microwave radiation is calculated. It exhibits oscillatory features at fractional values of the ratio ω/ω_c of the circular frequency of microwave radiation to the cyclotron frequency. The calculation explains existing experimental data by nonequilibrium population of electron states that appears due to one-photon processes and predicts ω/ω_c values near which the basic features in magnetoresistance are expected. In the framework of the mechanism under consideration, the fractional features can be observed only in the crossover from strongly overlapping to separate Landau levels and only at radiation frequencies below the threshold frequencies depending on a fractional value.     

Magnetoresistance oscillations of two-dimensional electron systems in lateral superlattices with structured unit cells

Model calculations for commensurability oscillations of the low-field magnetoresistance of two-dimensional electron systems (2DES) in lateral superlattices, consisting of unit cells with an internal structure, are compared with recent experiments. The relevant harmonics of the effective modulation potential depend not only on the geometrical structure of the modulated unit cell, but also strongly on the nature of the modulation. While higher harmonics of an electrostatically generated surface modulation are exponentially damped at the position of the 2DES about 90 nm below the surface, no such damping appears for strain-induced modulation generated, e.g., by the deposition of stripes of calixarene resist on the surface before cooling down the sample.     

Al0.22Ga0.78N/GaN二维电子气中的弱局域和反弱局域效应

通过磁输运测量研究了Al_0.22Ga_0.78N/GaN二维电子气的电子相干散射中的弱局域和反弱局域化现象.在外加弱磁场的情况下，该系统表现出正-负磁阻的变化，说明在Al_0.22Ga_0.78N/GaN异质结中存在晶体场引起的电子自旋-轨道散射.同时讨论了二维电子气中不同的散射时间对温度的依赖关系，实验得到的非弹性散射时间与温度成反比，表明非弹性散射机理主要来源于小能量转移的电子-电子散射. 关键词： 二维电子气 弱局域 磁阻     

Sensing domain wall pinning in the longitudinal magnetoresistance of a two-dimensional electron gas

We investigate the sensing of domain wall pinning in thin Co wires positioned on top of a two-dimensional electron gas (2DEG) heterostructure by measuring the longitudinal resistance of the 2DEG as the magnetic field is swept, in an analogy to the Barkhausen effect. For comparison, we also measure the magnetoresistance of the ferromagnetic film in the same device in a subsequent sweep. Compared to the Hall measurements, the longitudinal measurement has the advantage of sensing magnetic activity over longer lengths, while compared to the measurement of the magnetoresistance in the ferromagnetic wire, it offers complementary information related to the pinning and unpinning of the domain wall, due to its sensitivity only to the out-of-plane magnetic field component.