Brillouin scattering study on elastic and piezoelectric properties of laser irradiated ZnO single crystals

Brillouin light scattering technique can be successfully used to determine the whole set of elastic and piezoelectric constants of a ZnO single crystal irradiated by different laser energy densities,into a micron range (radiation layer thickness).It is found that the scattering intensity,the linewidth and the Brillouin scattering shift of acoustic phonons are all strongly dependent on laser energy density.Based on the sound propagation equations and these results,the directional dependences of the compressional and shear moduli of the irradiated ZnO sample in the (001) plane are investigated.It is found that under an appropriate laser condition,248 nm KrF excimer laser irradiation can significantly improve the surface quality and increase the elastic properties of ZnO single crystal.This procedure has potential applications in the fabrication of ZnO-based surface acoustic wave and optic-electronic devices.     

Cathodoluminescence study of extended defects in hydrothermal ZnO crystals

Understanding the luminescence of ZnO is very important for some applications. In spite of the many studies carried out, there are still some points concerning the origin of some of the luminescence emissions in ZnO crystals that require additional study; in particular, the role of extended defects remains to be a matter of controversy. We present here a cathodoluminescence analysis of the defects generated by Vickers indentation in hydrothermal HTT crystals. Special emphasis was paid to the luminescence band peaking around 3.3 eV. The origin of this band is a matter of controversy, since it has been related to different causes, extended defects being one of the candidates for this emission. The CL images were acquired around crystal defects. It is observed that the 3.3 eV emission is enhanced around the crystal defects; though it is also observed, but weaker, out of the defect regions, which suggests that there exist two luminescence emissions peaking very close to 3.3 eV. The two emissions, one related to structural defects and the other to the LO phonon replica of the free excitonic band, appear very close each other and their relative intensity should determine the shape of the spectrum.     

Surface morphology and optical properties of ZnO epilayers grown on Si(1 1 1) by metal organic chemical vapor deposition

Heteroepitaxial ZnO epilayers were grown on Si(1 1 1) substrates using a vertical geometry atmospheric pressure metal organic chemical vapor deposition (AP-MOCVD) system. The growth temperature was varied from 550 °C to 650 °C in steps of 25 °C. The ZnO growth rate and surface morphology were strong functions of the growth temperature and ranged from ∼0.16 μm/h to 1.36 μm/h. The surface morphology of the ZnO films changed from granular to sharp tips as the growth temperature increased. The effect of buffer thickness was also examined, and was found to have a strong effect on the optical properties of the ZnO. An optimized growth condition for ZnO epilayers was found at 625 °C, producing a FWHM in the room temperature photoluminescence (PL) spectrum of 4.5 nm and a preferred growth orientation along the (0 0 2) direction.Transmission electron microscopy images and selected area diffraction patterns showed excellent crystalline quality of both the buffer and ZnO overlayer. When non-optimized growth temperatures were employed, post-growth annealing was found to greatly enhance the ratio of band-edge to deep level emission.     

A Simple Hydrothermal Method for the Growth of ZnO Crystals

ZnO microstructures have been grown from zinc chloride (ZnCl₂) and ammonia solution at 100 °C for 1 – 24 hours. X‐ray diffraction, scanning electron microscope and field‐emission scanning microscope were utilized to investigate the structural properties and morphology of the ZnO crystals. Structural investigations show that phase‐pure hexagonal structure ZnO has been successfully synthesized, and the hexagonal structure ZnO can be achieved in solutions with an appropriate range of concentrations. Under our experimental conditions, several different morphologies of ZnO structures were obtained, including flower‐like and bar flower‐like. The relationship between the morphology and experimental conditions are discussed.     

The effect of substrate surface roughness on ZnO nanostructures growth

The ZnO nanowires have been synthesized using vapor-liquid-solid (VLS) process on Au catalyst thin film deposited on different substrates including Si(1 0 0), epi-Si(1 0 0), quartz and alumina. The influence of surface roughness of different substrates and two different environments (Ar + H₂ and N₂) on formation of ZnO nanostructures was investigated. According to AFM observations, the degree of surface roughness of the different substrates is an important factor to form Au islands for growing ZnO nanostructures (nanowires and nanobelts) with different diameters and lengths. Si substrate (without epi-taxy layer) was found that is the best substrate among Si (with epi-taxy layer), alumina and quartz, for the growth of ZnO nanowires with the uniformly small diameter. Scanning electron microscopy (SEM) reveals that different nanostructures including nanobelts, nanowires and microplates have been synthesized depending on types of substrates and gas flow. Observation by transmission electron microscopy (TEM) reveals that the nanostructures are grown by VLS mechanism. The field emission properties of ZnO nanowires grown on the Si(1 0 0) substrate, in various vacuum gaps, were characterized in a UHV chamber at room temperature. Field emission (FE) characterization shows that the turn-on field and the field enhancement factor (β) decrease and increases, respectively, when the vacuum gap (d) increase from 100 to 300 μm. The turn-on emission field and the enhancement factor of ZnO nanowires are found 10 V/μm and 1183 at the vacuum gap of 300 μm.     

Interaction of O2 with Pd single crystals in the range 1-150 Torr: Surface morphology transformations

The interaction of O₂ with Pd single crystals including Pd(1 1 1), Pd(1 1 0) and Pd(1 0 0) in the pressure range 1-150 Torr was studied using scanning tunneling microscopy (STM). The Pd single crystal surface morphologies were determined by the oxidation conditions: O₂ pressure, exposure time and treatment temperature. Oxygen dissolution into Pd metal followed by the formation of bulk oxide was observed. The dissolution of oxygen resulted in the increase of the inter-planar spacing between the first two layers, 9-14% increase after an exposure of Pd(1 1 1) to 10-25 Torr O₂ at 600 K for 10 min, and 10-20% increase after exposing Pd(1 1 0) and Pd(1 0 0) to 1 Torr O₂ at 600 K for 10 min. Elongated or semi-spherical oxide agglomerates along the steps nucleated and grew on both Pd(1 1 0) and Pd(1 0 0) surfaces after oxidation in 5-25 Torr O₂ at 600 K. When bulk PdO was formed, the single crystal surface was covered with semi-spherical agglomerates 2-4 nm in size, which tended to aggregate to form a “cauliflower-like” structure. The single crystal surface area also increased during oxidation.     

Comparative characterization of differently grown ZnO single crystals by positron annihilation and Hall effect

High-quality ZnO single crystals of dimensions 10×10×0.3 mm³, grown either using a pressurized melt or a hydrothermal growth approach, have been investigated in their as-received state and are compared regarding their properties revealed by positron annihilation and Hall effect measurements. By positron annihilation performed at room temperature it is found that the pressurized melt grown crystals contain a certain amount of Zn+O divacancies, but no Zn vacancies are detected, whereas the hydrothermally grown crystals contain a dominating defect yet unknown in its structure but possibly connected to the Zn vacancy. Furthermore, the influence of an additional refined chemical–mechanical polishing of the crystal surface by a special procedure on the depth distribution of vacancy-type defects is demonstrated. Hall measurements, performed in the temperature range 20–325 K, showed that the crystal growth method has a strong influence on the carrier mobility, and the estimated acceptor densities also differ significantly in both types of crystal.     

Dielectric spectroscopy studies of ZnO single crystal

Dielectric relaxation and charge transport induced by electron hopping in ZnO single crystal are measured by using a novocontrol broadband dielectric spectrometer. Typical Debye-like dielectric relaxation originating from electronic hopping between electronic traps and conductive band in surface Schottky barrier region is observed for ZnO single crystal-Au electrode system. However, after insulation of ZnO single crystal by heat treatment in rich oxygen atmosphere, dielectric relaxation and alternating current conductance are observed simultaneously in the dielectric spectra, implying that dielectric relaxation and charge transport can be induced simultaneously by electronic hopping at high temperature in an ordered system. The intrinsic correlation between local dielectric relaxation and long range charge transport offers us a new method to explore complicated dielectrics.     

Low energy oxygen implantation induced improved crystallinity and optical properties of surface modified ZnO single crystals

We report on the low energy oxygen implantation induced improvement in crystallinity and optical properties of surface modified ZnO single crystals. Undoped ZnO (0 0 0 1) single crystal wafers are implanted with 100 keV oxygen ions at a dose of 5 × 10¹³ and 5 × 10¹⁴ cm⁻² and subsequently annealed at 500 and 600 °C in oxygen ambient. The as-implanted and annealed ZnO wafers are studied by Rutherford back scattering spectrometry (RBS), channeling, Raman, photoluminescence (PL), and Fourier transform infrared spectroscopy (FTIR). Channeling studies show a relatively high χ_min (>20%) in the virgin ZnO wafer. After implantation and two-step annealing, RBS studies show improved crystallinity. Raman line width analysis for the mode indicates reduction in strain in the annealed samples as compared to the virgin ZnO wafer. As-implanted samples show drastic quenching of the near band-edge (NBE) PL band due to defects created by the implantation. However, after two-step annealing, the low-dose implanted sample show a five-fold increase in intensity ratio of NBE band (376 nm) to defect related broad band (∼530 nm) at room temperature. Implantation induced changes in the composition and improved crystallinity in the near surface region is accounted for the major improvement in the PL emission.     

Formation of indentation cracks and origin of indentation size effect in cadmium tartrate pentahydrate single crystals

The load dependence of the Vickers microhardness on the as-grown (0 1 0) and (0 0 1), and cleaved (0 0 1) faces of cadmium tartrate pentahydrate (CTPH) single crystals has been investigated. The experimental results showed that, with an increase in the applied load, the microhardness of the as-grown (0 1 0) and (0 0 1) faces decreases, while that of the unheated and heated (0 0 1) cleavage faces decreases first up to a load of 2.5 N and then increases. Analysis of the experimental results revealed that: (1) radial crack length, indentation size and applied indentation load are mutually related, and these dependences related with fracture mechanics are the basis of Meyer’s empirical law, (2) with increasing indentation load, changes in the mechanism of development of indentation cracks from radial cracks to lateral cracks and surface chipping of the material, followed by predominantly surface chipping of the material are responsible for indentation size effect in CTPH crystals, (3) proportional specimen resistance model and Meyer’s law not only explain the indentation size effect but also can be used to determine load-independent hardness H^∗, and (4) there is no direct relationship between microhardness and fracture toughness of different CTPH samples, while the values of load-independent hardness H^∗, and brittleness indices β and B of CTPH crystals increase linearly with the Meyer constant A. Procedures are given to determine load-independent hardness H^∗ from the transition values of load and corresponding indentation size.     

Tunable surface and/or interface ferromagnetism of ZnO nanoparticles

The ZnO-based diluted magnetic semiconductor materials have been widely investigated since the room temperature ferromagnetism (FM) was predicted in the p$p$-type Mn doped ZnO. However, it is now clear that magnetic dopants or impurities are not necessary for introducing FM into ZnO. As confirmed by numerous theoretical and experimental works, tunable FM can be effectively introduced into ZnO nanoparticles (NPs) by controlling the surface and/or interface nanostructures. This review describes the recent advances in the surface and/or interface FM of ZnO NPs without any magnetic impurities. On the basis of the previous reports including our recent works, the origin of FM of ZnO NPs has been overviewed and discussed in terms of defects, complex reactions or compounds, and electron transfer at the NP surface or interface.     

Scintillation properties of Er-doped Y3Al5O12 single crystals

Er-doped Y₃Al₅O₁₂ single crystals with different Er concentrations of 0.1, 1.0, 10, 30, and 50% were grown by the micro-pulling down method. There were several absorption lines due to the Er³⁺ 4f-4f transitions in the transmittance spectra and these lines correspond to the transitions from the ground state of ⁴I_15/2 to the excited states. The photo- and radio-luminescence spectra showed Er³⁺ 4f-4f emissions. Relative light yield under 5.5 MeV alpha-ray irradiation of Er 0.1%:Y₃Al₅O₁₂ was estimated to be 63% of that of Bi₄Ge₃O₁₂.     

Growth and radioluminescence of metal elements doped LiCaAlF6 single crystals for neutron scintillator

The ns²-type metal elements (Pb and Sn) doped LiCaAlF₆ single crystals were grown by a micro-pulling-down (μ-PD) method. Pb doped LiCaAlF₆ [Pb:LiCAF] crystals showed high transparency and single phase of the LiCAF structure. However, we could not obtain Sn:LiCAF crystals due to the evaporation of SnF₂ during the crystal growth. There was an absorption peak around 193 nm in the transmittance spectrum of Pb:LiCAF crystal. In the radioluminescence spectrum of the Pb:LiCAF crystal under X-ray irradiation, two emission peaks around 200 and 830 nm were observed.     

On the perfection of cleavage planes of potassium bichromate single crystals

The relative perfection of the 001, 100 and 100 cleavage planes of potassium bichromate single crystals is analysed by calculations of the surface energy of main crystallographic planes. The surface energy was determined for the three cleavage planes as well as for planes corresponding to other theoretically possible orientations. It was found that: (1) among different planes the calculated values of the surface energy of the 001, 100 and 010 cleavage planes of potassium bichromate are the lowest, (2) among the three cleavage planes the 001 perfect cleavage plane has the lowest surface energy, (3) the relative perfection of different cleavage planes can be explained by using the coefficient δ proportional to the ratio of the surface energy of the hkl cleavage plane to the energy of dislocations emerging on the plane, and (4) the lower the values of the coefficient δ for a cleavage plane, the better is the cleavage perfection.     

Enhancement of surface morphology and optical properties of nanocolumnar ZnO films

Nanocolumnar ZnO films were prepared by electrodeposition (ED) on a glass substrate covered with a conductive layer of thin oxide doped with fluorine (FTO). After deposition the samples were annealed in oxidizing or reducing atmosphere, at temperatures between 100 to 500 C, in order to follow the evolution of optical properties and morphology. The optical properties of these films were studied by means of photoluminescence spectroscopy (PL) and the morphology by scanning electron microscopy (SEM). Films annealed at 300 C exhibit a higher ultraviolet emission peak, originating from exciton transitions. A green band related to deep-level emission centered at 500 nm, shows a drastic increase at 500 C. These results are independent of the annealing atmosphere. An increase of coalescence is also observed after annealing at 500 C. These results are explained taking into account the contribution of different point defects.     

混合碱液法生长的氧化锌晶体表面形貌及光致发光性质

从NaOH和LiOH的混合碱液中生长了具有不同六方形貌的淡黄色ZnO晶体.采用X射线粉末衍射的方法对晶体的物相进行了分析,利用光学显微镜和扫描电镜对晶体的形貌进行了表征,同时利用电子探针能谱仪对晶体的组分进行了分析.从晶体的室温光致发光谱图中可以观测到380,445,512,652 nm处存在与晶体结构和缺陷相关的发射...     

Influences of KrF laser irradiation on the structure and luminescence of ZnO single crystal

<正>In this paper,we investigate the laser irradiation of ZnO single crystals and its influence on photoluminescence.Our study shows that the photoluminescence of ZnO single crystals strongly depends on surface morphologies.The ultraviolet emissions of laser treated-ZnO under 200 mJ/cm~2 become stronger,whereas for those deteriorated by irradiation above 200 mJ/cm~2,the green emissions centred at 2.53 eV are significantly enhanced with a red-shift to 2.19 eV,probably due to the changes in the charge states of the defects.Enhanced yellow-green emissions are well resolved into four peaks at around 1.98,2.19,2.36,and 2.53 eV due to a shallow irradiation depth.Possible origins are proposed and discussed.     

Effect of surface ZnO coatings on oxidation and thermal stability of zinc films

The effect of thin ZnO coatings grown on Zn films on further oxidation and thermal stability of Zn films deposited on Mo(110) substrate was in situ investigated under ultrahigh vacuum by photoelectron spectrometries and low-energy electron diffraction. The results indicated that ZnO layers formed by oxidizing Zn films had at least a thickness of 3–5 monolayers. Further oxidation of Zn films was confined by as-formed ZnO coatings due to a surface passivation. It was of advantage to explain the difficulty in growing low oxygen-deficient ZnO films. The surface ZnO coatings strongly enhanced the thermal stability of Zn films, which was useful for understanding the underlying application of Zn/ZnO materials, such as Zn/ZnO nanocables with Zn core and ZnO shell.     

切削用量对铝靶表面质量的影响

 采用单点金刚石切削技术，完成了对ICF实验用铝靶的切削加工，重点研究了切削用量对加工表面质量的影响。实验结果表明：采用较小的进给速度，较大的主轴转速能够获得较低的表面粗糙度，切削深度对表面质量影响较小。通过Form Talysurf 表面轮廓仪测量，结果表明表面粗糙度小于50 nm。     

Highly sensitive reversible light-driven switches based on LaSrAlO4 single crystals

An enhanced photoinduced reversible switching of LaSrAlO₄ single crystal was investigated as a highly sensitive photoswitch. The LaSrAlO₄ crystal showed an enhanced reversible photoswitching performance with high on/off ratio of 66 at bias voltage V_b = 30 V. A linear relationship was obtained to the on/off ratio as a function of bias voltage without any saturation trend from − 30-30 V. Compared with other complicated methods, the mechanism of electric field tunable would be the simplest and possibly the most direct way to develop the optoelectronic performances.