Ultraviolet photosensitive response in an antimony-doped optical fiber

A silica optical fiber doped with Sb is fabricated with a refractive-index profile that is comparable with standard single-mode fiber. In D(2)-loaded samples, we observe UV photosensitivity with an initial refractive-index-modulation growth rate six times higher than that of the equivalent Ge-doped standard fibers. Enhanced temperature stability of the Bragg grating strength up to 200 degrees C is also observed. Grating growth kinetics in the Sb-doped fiber is compared with those of other Ge-doped photosensitive fibers.     

INVESTIGATION OF DEFECTS IN Ge-DOPED GaAs CRYSTAL GROWN IN A MAGNETIC FIELD

Ge-doped GaAs single crystals have been grown by liquid-encapsulated Czochralski method in absence and presence of a magnetic field of 4000Gauss. By means of high op-tical efficiency photoluminescence, spectra of the grown crystals at room temperature were obtained, which consist of two emission bands A and B at 1.39-1.42eV and 0.97-1.05eV, respectively. Comparing the photoluminescence mappings with microphotographs of etched wafers, Hall effect results and electron probe microanalyses of the n- and p-type crystals with different Ge concentrations, we considered that the emission bands A and B originate from Ge-related acceptor and donor complexes, respectively. The complexes were formed during crystal growth, mainly due to temperature fluctuations in molten Ge-doped GaAs. The concentrations and homogeneities of the defects can be improved by the application of a magnetic field during crystal growth to suppress the temperature fluctuation.     

Ultra-wide bandwidth wavelength selective couplers based on the all solid multi-core Ge-doped fibre

A novel wavelength selective coupler based on the all solid nine-core Ge-doped fibre has been proposed. The wavelength selective coupler is based on the phenomenon of a multi-core coupling. All the cores are made of Ge-doped silica and the index of central core is larger than the outer core. At the fixed fibre length, the different wavelength can be selected. The performances of coupling and propagation characteristics have been numerically investigated by using a full beam propagation method (BPM). Simulation results show that the all solid nine-core Ge-doped fibre can achieve simultaneous shorter coupler length and wideband filtering characteristics. The 0.763 mm and 0.745 mm wavelength selective coupler are proposed to achieve different wavelength division and the bandwidth is up to the 400 nm, and 300 nm, respectively.     

Contribution of photoinduced densification to refractive-index modulation in Bragg gratings written in Ge-doped silica fibers

We have computed the contribution of UV-light-induced densification to the refractive-index modulation of fiber Bragg gratings. Our results confirm that, for strong gratings written in Ge-doped silica fibers with 248-nm UV light, density changes account for a major part of the photosensitivity effect.     

Fiber bragg gratings made with a phase mask and 800-nm femtosecond radiation

High-quality retroreflecting fiber Bragg gratings were written in standard Ge-doped telecom fiber (Corning SMF-28) after a few minutes exposure with pulsed 800-nm, 120-fs laser radiation by use of a deep-etch silica zero-order nulled phase mask optimized for 800 nm. Induced index modulations of 1.9 x 10(-3) were achieved with peak power intensities of 1.2 x 10(13) W/cm2 without any fiber sensitization. The fiber gratings are stable and did not erase after 2 weeks at 300 degrees C. The primary mechanism of induced index change results from a structural modification to the fiber core.     

Hydrogen loading for fiber grating writing with a femtosecond laser and a phase mask

The threshold for the fabrication of fiber Bragg gratings with ultrafast 800-nm radiation and a phase mask was studied in SMF-28 and all-silica core fiber by use of 125-fs pulses. High-pressure molecular hydrogen loading (H2 loading) was observed to significantly lower the grating writing threshold in standard Ge-doped telecommunication fiber. No reduction was observed with all-silica core fiber. The index change appeared to be confined to the Ge-doped core region of the fiber. Gratings in H2-loaded SMF-28 had thermal annealing behavior similar to UV-induced gratings. Unlike UV-induced H2-loaded gratings, no absorption associated with Ge-OH defect formation was observed.     

Passively Q-switched fiber laser that uses saturable Raman gain

Operation of a short all-fiber passively Q-switched Raman laser pumped by a continuous-wave laser diode is experimentally demonstrated. The passively switched fiber laser consists simply of a double-clad ytterbium-doped silica fiber that is spliced directly to a moderately germanium-doped silica fiber. The placement of the Ge-doped silica fiber within the fundamental (Raman pump) cavity allows interplay between fundamental and Stokes fields to take place, which leads to saturation of the Raman gain as a result of pump depletion. Pulse widths of 70 and 60 ns at the first and second Stokes wavelengths of 1168 and 1232 nm, respectively, are produced at a stable 588 kHz repetition rate.     

Spectral heterogeneity of oxygen-deficient centers in Ge-doped silica

We report an experimental investigation of the emission spectra of a 1000 mol ppm sol–gel Ge-doped silica by fine tuning the excitation energy in the ultraviolet (UV) range, around 5 eV, and in the vacuum-UV range, around 7.3 eV, at room temperature and at 10 K. The sample is characterized by a blue (centered at 3.2 eV) and an UV (centered at 4.3 eV) bands. We have found that the ratio between the area of the blue and the UV bands depends on the temperature and on the excitation energy in both the vacuum-UV and the UV range. At both temperatures the spectral features of the blue and the UV bands are weakly affected when the excitation is varied in the vacuum-UV. At variance, under UV excitation the peaks of the bands are shifted and also their widths are changed. These results are interpreted in terms of distinct excitation channels of the luminescence that are influenced in a different way by the structural inhomogeneity of point defects.     

Increasing the free spectral range of silica waveguide rings for filter applications

Ring resonators are promising building blocks for developing compact optical filters with arbitrary functions; however, a major challenge for planar waveguide filter implementations is to overcome the limited free spectral range (FSR) for a given core-to-cladding refractive-index difference (D) while maintaining low loss and a large range of coupling ratios. The loss and coupling of rings operating in the whispering-gallery-mode regime were investigated by use of Ge-doped silica waveguides with a low refractive-index difference (D=0.75%) . A FSR of 12 GHz with a loss of 0.36 dB/cm was demonstrated with coupling ratios of 30% (41% optimum).     

Plasmonics: influence of the intermediate (or stick) layer on the efficiency of sensors

This paper reports the formation of Ge nanoclusters in a multi-layer structure consisting of alternating thin films of Ge-doped silica glass and SiGe, deposited by plasma-enhanced chemical vapor deposition (PECVD) and post annealed at 1100 °C in N₂ atmosphere. We studied the annealed samples by transmission electron microscopy (TEM) and Raman spectroscopy. As-deposited and annealed samples were analyzed by secondary ion mass spectroscopy (SIMS). TEM investigation shows that Ge nanoclusters were formed in the as-deposited SiGe layer and the SiGe layer was transformed into a silicon dioxide layer embedded with Ge nanoclusters after annealing. These nanoclusters are crystalline and varied in size. There were no clusters in the Ge-doped glass layer. Raman spectra verified the existence of crystalline Ge clusters. The positional shift of the Ge vibrational peak with the change of the focus depth indicates that the distribution of the stress applied to the Ge clusters varies with depth. SIMS measurements show clearly the dramatic O increase in the as-deposited SiGe layer after annealing. The creation of Ge nanoclusters by the combination of PECVD and annealing makes possible the application in complicated waveguide components. PACS 81.07.Bc; 78.66.Jg; 42.65.Wi     

Bragg grating fabrication in germanosilicate fibers by use of near-UV light: a new pathway for refractive-index changes

Using 334-nm light, we demonstrate side writing of Bragg gratings with an index change of ~10(-4) in germanium-doped fibers. No hydrogen loading of the fibers was required. These gratings have the same temperature stability as gratings fabricated with 240-nm light. Our results suggest that photoionization is not needed for formation of gratings in Ge-doped glass. We observe an enhancement of the 334-nm photosensitivity in boron-codoped fibers and suggest that B facilitates a structural transformation of the glass.     

Design and Fabrication of an Er-Doped Silica Optical Fiber with Six Photosensitive Subcores

A type of multi-core Er-doped photosensitive silica optical fiber （MC-EDPF） is proposed and fabricated, in which a high consistency Er-doped core is surrounded by six high consistency Ge-doped cores. The multi-core design can overcome the difficulties encountered in the design and fabrication of single-core EDPFs through a modified chemical vapor deposition method combined with solution doping technology, and there is a conflict between high consistency Er doping and high consistency Ce doping. The absorption of MC-EDPFs achieved 15.876dB/m at 1550mm and lOdB/m at 98Ohm. The refleetivity of the fiber Bragg gratings （FBCs） written directly on the MC-EDPFs is as much as 96.84%.     

Photochemical reaction of hydrogen with germanosilicate glass initiated by 3.4 5.4-eV ultraviolet light

By measuring the photosensitivity of Ge-doped silica fibers over the 3.4-5.4-eV spectral range and from T=95 K to T=375 K , we demonstrate that different physical mechanisms take place depending on whether H(2) is present. Without H(2) the principal photosensitivity pathway involves excitation of a germanium oxygen-deficient center to its triplet state. In H(2) -loaded fibers the UV light excites the regular Ge-O bond, which then reacts with H(2) to produce Si-OH or Ge-OH and a GeE(') center.     

Arbitrary-lattice photonic crystals created by multiphoton microfabrication

We used voxels of an intensely modified refractive index generated by multiphoton absorption at the focus of femtosecond laser pulses in Ge-doped silica as photonic atoms to build photonic lattices. The voxels were spatially organized in the same way as atoms arrayed in actual crystals, and a Bragg-like diffraction from the photonic atoms was evidenced by a photonic bandgap (PBG) effect. Postfabrication annealing was found to be essential for reducing random scattering and therefore enhancing PBG. This technique has an intrinsic capability of individually addressing single atoms. Therefore the introduction of defect structures was much facilitated, making the technique quite appealing for photonic research and applications.     

Three-hole microstructured optical fiber for efficient fiber Bragg grating refractometer

We present a photosensitive three-hole microstructured optical fiber specifically designed to improve the refractive index sensitivity of a standard fiber Bragg grating (FBG) sensor photowritten in the suspended Ge-doped silica core. We describe the specific photowriting procedure used to realize gratings in such a fiber. We then determine their spectral sensitivity to the refractive index changes of material filling the holes surrounding the core. The sensitivity is compared with that of standard FBGs photowritten in a six-hole fiber with a larger core diameter. We demonstrate an improvement in the sensitivity by two orders of magnitude and reach a resolution of 3 x 10(-5) and 6 x 10(-6) around mean refractive index values of 1.33 and 1.40, respectively.     

Comparison of the influence of the fictive and the annealing temperature on the UV-transmission properties of synthetic fused silica

′ and NBOH). Samples with high OH content exhibit gradual recovery from the absorption band within several minutes after exposure to the KrF laser radiation. The formation of the KrF laser-induced 210 nm absorption band depends on the fictive temperature and on the OH content. Low fictive temperature, as a measure for the number of intrinsic defects, retards E^′ generation at the beginning of intense KrF excimer laser irradiation when the majority of defects are generated from precursor defects. However, for longer irradiation periods with pulse numbers of the order of 10⁵ pulses, a high OH content is the beneficial parameter. The accompanying atomic hydrogen is essential for the suppression of the 210 nm absorption band. This happens by transformation of the E^′ centers into Si-H defects. In contrast to a generally held view, annealing (decreasing of the fictive temperature) of fused silica does not always reduce UV induced defect generation. For example, annealing of the samples in an argon atmosphere causes a significantly higher 210 nm absorption increase during KrF excimer laser irradiation (240000 pulses) compared to nonannealed samples. Two spectroscopic methods to determine the OH content of fused silica were applied: Raman and infrared spectroscopy, which in this work lead to differing results. The energetics of the 210 nm absorption band generation and bleaching is summarized by a diagram explaining the interaction of the 248 nm laser radiation with fused silica. Received: 2 June 1997/Accepted: 13 June 1997     

Density functional investigation of structural, electronic and optical properties of Ge-doped ZnO

Recent experiments reported fascinating phenomenon of photoluminescence (PL) blueshift in Ge-doped ZnO. To understand it, we examined the structural, electronic and optical properties of Ge-doped ZnO (ZnO:Ge) systematically by means of density functional theory calculations. Our results show that Ge atoms tend to cluster in heavily doped ZnO. Ge clusters can limit the conductivity of doped ZnO but reinforce the near-band-edge emission. The substitutional Ge for Zn leads to Fermi level pinning in the conduction band, which indicates Ge-doped ZnO is of n-type conductivity character. It is found that the delocalized Ge 4s states hybridize with conduction band bottom, and is dominant in the region near the Fermi level, suggesting that Ge-4s states provides major free carriers in ZnO:Ge crystal. The observed blueshift of PL in Ge-doped ZnO originates from the electron transition energy from the valence band to the empty levels above Fermi level larger than the gap of undoped ZnO. The electron transition between the gap states induced by oxygen vacancy and conduction band minimum may be the origin of the new PL peak at 590 nm.     

锗掺杂聚合物及其泡沫的制备与表征北大核心CSCD

采用稳定自由基聚合法合成了锗掺杂聚苯乙烯类聚合物,并利用聚合物溶液的热致相分离原理和冷冻干燥技术制备出具有多孔结构的锗掺杂泡沫材料。通过核磁共振氢谱、等离子体发射光谱及扫描电镜等测试手段表征了聚合物分子和泡沫结构。结果表明,聚合物分子具有极窄的分子量分布,锗掺杂原子分数为2．6％;泡沫具有多孔网络结构和薄片状骨架,骨架间的孔洞尺寸为1～10／zm,泡沫骨架随密度的降低趋于细化,孔洞变大。     

Effects of nitridation on the characteristics of silicon dioxide: dielectric and structural properties from ab initio calculations

By combining ab initio calculations and classical molecular dynamics, we determine how the inclusion of nitrogen in a silica matrix changes its dielectric constant, and elucidate the underlying mechanisms. We find that there is an entire range of nitrogen concentrations (up to approximately 25%) for which the structural pattern of the oxide is preserved in bulk SiON, and the dielectric constant increases mainly because of the variation of the ionic polarizability. This behavior is not sensitive to hydrogen passivation of nitrogen. The few defects, which are associated with electron states near the gap, are mainly centered on undercoordinated nitrogen and undercoordinated silicon, and tend to be removed by hydrogen.     

聚丙烯酰胺/纳米SiO2复合凝胶的制备及初步研究

利用原位自由基聚合方法合成了聚丙烯酰胺/纳米SiO2复合凝胶,并用红外光谱测定了凝胶化过程中几个典型的反应阶段的红外光谱图,结果表明,复合材料在凝胶化过程中,不仅存在聚合交联反应,同时内部还可能有氢键的形成或其他一些化学作用.用光学显微镜观察了不同纳米粒子含量的复合凝胶的表面形貌,研究表明,纳米粒子在凝胶中并没有出现团聚,表面仍为均匀体系.