In situ atomic force microscopy studies of surface morphology,growth kinetics,defect structure and dissolution in macromolecular crystallization

Surface morphologies of thaumatin, catalase, lysozyme and xylanase crystals were investigated using in situ atomic force microscopy. For thaumatin, lysozyme and xylanase crystals, growth steps having a height equal to the unit cell parameter were produced both by screw dislocations and two-dimensional nuclei. Growth of catalase crystals proceeded in alternating patterns exclusively by two-dimensional nucleation and the successive deposition of distinctive growth layers, each having a step height equal to half the unit cell parameter. The shapes of islands on successive layers were related by 2-fold rotation axes along the 〈0 0 1〉 direction. Experiments revealed that step bunching on crystalline surfaces occurred either due to two- or three-dimensional nucleation on the terraces of vicinal slopes or as a result of uneven step generation by complex dislocation sources. Growth kinetics for thaumatin and catalase crystals were investigated over wide supersaturation ranges. Strong directional kinetic anisotropy in the tangential step growth rates in different directions was seen. From the supersaturation dependencies of tangential step rates and the rates of two-dimensional nucleation, the kinetic coefficients of the steps and the surface free energy of the step edge were calculated. Adsorption of impurities which formed filaments on the surfaces of catalase and thaumatin crystals was recorded. Cessation of growth of xylanase and lysozyme crystals was also observed and appeared to be a consequence of the formation of dense impurity adsorption layers. Crystal growth resumed upon scarring of the impurity adsorption layer and clearing of the crystal surface with the AFM tip. Adsorption of three-dimensional clusters, which consequently developed into either properly aligned multilayer stacks or misaligned microcrystals was recorded. For catalase crystals, incorporation of misoriented microcrystals as large as 50×3×0.1 μm³ produced elastic deformations in growth layers of ≈0.6%, but did not result in the defect formation. Etching experiments on catalase crystals revealed high defect densities.     

Two‐ and three‐dimensional growth modes of nitride layers

Heteroepitaxial three dimensional (3D) and two dimensional (2D) growth modes of nitride layers on sapphire substrates are discussed. It is shown that the 3D or 2D growth mode of AlGaN layers depends predominantly on the growth conditions of the underneath low temperature (LT) nucleation layer. Commonly described in literature 3D growth mode is achieved on LT GaN or AlN nucleation layer grown relatively fast. Successive growth of secondary layer at high temperature begins from separated sites, where individual 3D crystallites are formed. Threading dislocations present in crystallites bend on their facets, which reduces the quantity of dislocations. However, slight crystallographic misorientations between crystallites lead to the creation of new dislocations during coalescence of the crystallites. As a result, edge and mix dislocations appear at similar densities of about 10⁹ cm^‐2. Modification of growth conditions of LT AlN nucleation layer, especially reduction of their growth rate, leads to drastic changes in properties of the layer. Successive growth of secondary AlGaN layer at high temperature starts evenly on whole surface retaining atomic flatness. Thus growth at high temperature occurs only by 2D mode. Therefore, it is possible to grow a very thin AlGaN layers directly on top of LT nucleation layer. Such layers contain large number (10¹⁰ cm^‐2) of edge dislocations, and relatively small number (less then 10⁸ cm^‐2) of mix dislocations. It is also shown that the decisive factor determining the growth mode of AlN nucleation layer is a growth of the first few atomic layers on substrate surface. The slow growth of these few first atomic layers decide about the 2D growth mode, and the fast one about the 3D one. The model explaining this difference is presented as well. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Atomic Force Microscopy Studies on Growth Mechanisms and Defect Formations on {110} Faces of Cadmium Mercury Thiocyanate Crystals

Growth mechanisms and defect formations on {110} faces of cadmium mercury thiocyanate crystals grown at 30°C (σ=0.24) were investigated by using atomic force microscopy (AFM). It was found that, under this condition, spiral dislocation controlled mechanism and 2D nucleation mechanism operates simultaneously and equally during growth, which is completely different from the traditional 2D nucleation and dislocation source controlled mechanisms. A number of 2D nucleus are formed at the large step terraces generated by dislocation sources, leading to the unequal growth rates of the elementary steps and thereby “step bunches” arecaused. Various defects are formed under this growth condition, which is assumed to result from the incongruence between the steps generated by different sources. A new kind of 2D defect, corresponding to one growth layer in height, was observed for the first time.     

Effect of pH value on the growth morphology of KH2PO4 crystal grown in defined crystallographic direction

KH₂PO₄ single crystals were grown in aqueous solution at different pH values by using “point seeds” with a defined crystallographic direction at 59 degree to the Z axis. Atomic Force Microscope (AFM) was applied to observe the surface morphology of (100) face. It was found that at the same supersaturation, the larger steps appeared at the lower pH value before appearance of 2D nucleus. We found that 2D nucleus was occurred at σ ≤ 0.04 when pH value is <2.8. The occurrence of 2D nucleus was caused by the decreasing step‐edge free energy with the decreasing of pH value in the growth solution. In this paper, we observed the morphologies of (100) faces of KDP crystals which grew in solutions with different pH values. 2D nucleuses appeared on the terrace of growth steps when pH value down to 2.8 and 3.2 at supersaturation of 0.04, while pH value down to 2.4, only 2D nucleation control the growth. Therefore, the pH value can change the growth mechanism of KDP crystals.     

On the nature of growth hillocks on sodium chlorate crystals

Optical examination of as-grown {100} surfaces of sodium chlorate crystals grown from aqueous solution revealed the presence of elliptical growth hillocks. The hillocks were present on both enantiomorphous forms and originated from dislocations, inclusions, and microcrystals attached to the growing surface. The value of the surface entropy factor equal to 4.55 at 313 K suggests that crystals grow via/or with the participation of dislocation mechanism, and the hillocks are dislocation growth centers. Compound mechanism controlled growth of some crystals because edge nucleation and dislocation centers operated simultaneously on the same surfaces.     

Distinct Growth Phenomena Observed on Zinc Cadmium Thiocyanate Crystals by Atomic Force Microscopy

Atomic force microscopy is used to investigate the surface morphology of the prismatic (100) face of ZCTC crystal grown at 30°C at a supersaturation of 0.16. This surface is distinctly formed by periodic “macrosteps” that advance along different directions and join with each other leading to the interlaced growth layers with an inclination of about 137°. These two “macrostep” trains well correspond to the pyramidal faces of (0 ) and (01 ) in orientation, therefore they probably propagate from the edges of these faces. The “macrosteps” are practically formed by highly dense steps at the front with regular elementary steps in between. The alternation of “macrosteps” and elementary steps vividly reflects Chernov's “kinematic waves of steps” theory (Chernov , (1984)) on a nanometer scale. Wide indentations and long clefts are generated at the “macrosteps”. The former is generated by twodimensional nucleation growth at a relatively faster growth rate than that of the underlying layer. The latter is probably caused by step trains generated by individual growth sources that have not merged.     

Mechanism of macrostep formation in solution growth of compound semiconductor and the evidence given by space experiment

The behavior of macrostep and its formation mechanism are discussed taking solution growth of compound semiconductor as an example. The macrosteps are created by the bunching of atomic steps on a misoriented substrate and they coalesce to form larger macrosteps. At a steady state, the vertical growth of the macrostep terrace is carried out by the atomic steps supplied from a screw dislocation. Space experiments conducted by the group of Professor K. W. Benz showed that the macrostep disappears under a temperature gradient when the growth rate is decreased below a certain value. It is concluded that the non‐uniform bulk diffusion of the solute is the driving force to create the macrostep.     

Growth of InGaAs/GaAs on Offcut Substrates by MOVPE: Influence on Macrosteps and Dislocations Formation

A study of the relationship between the macrosteps caused by the substrate misorientation and dislocation nucleation in MOVPE-grown InGaAs/GaAs is presented. The macrosteps could favour strain relaxation and the decrease of the critical thickness, also by generation of misfit dislocations in the 1/2〈110〉{011} glide system, as they can provide sites for stress accumulation above the average value far from the macrosteps. This adds up to the enhanced homogeneous dislocation nucleation associated with the offcut angle. The use of offcut substrates thus produces both compositional inhomogeneities and an increase of the overall dislocation density.     

Atomic force microscopy studies on liquid inclusions and induced defects of cadmium mercury thiocyanate crystal

Liquid inclusions and various defects accordingly induced on a nonlinear optical material of CMTC crystal were investigated by atomic force microscopy. Liquid inclusions are chiefly caused by formation of macrosteps, which result from impurity‐induced inhibiting of step growth and meeting of step trains advancing along different directions. Liquid inclusions induce generation of dislocations and even cracks within the crystal by three‐dimensional nucleation growth. Liquid inclusions also provide screw dislocation growth sources, leading to formation of spiral hillock trains with ridged tails. Etching experiments reveal circular hollow cores, indicative of screw dislocation growth, and negative crystals resulting from further crystallization in the liquid inclusions. (© 2003 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

失配性质对面心立方外延晶体失配位错结构及其形核机制的影响

运用三维分子动力学方法模拟了外延铝薄膜晶体中失配位错的形成过程.结果显示:失配度为fx=4;时,位错是通过薄膜表层原子的相对滑移来形核,形成一个伯格斯矢量为1/2[10 1]的刃型位错,该位错形成后会迅速向界面滑移,并稳定在离界面1～2个原子层上不动,同时在薄膜表面留下一个台阶.而失配度为fx=-4;时,位错形核是通过挤出一个四面体构型的原子团开始,形成一个伯格斯矢量为1/2[110]的刃型位错,该位错只能平行于界面滑移,位错稳定后离界面的距离比正失配度时的距离和热力学临界厚度都要大.     

Effect of zinc doping on pentaerythritol tetranitrate single crystals

In this study, the effect of zinc impurity on the organic high explosive pentaerythritol tetranitrate (PETN) single crystal has been investigated with optical microscopy and ex situ atomic force microscopy (AFM). The optical images show that the crystal shape has a transition with a predictable trend from long crystal to compact one as the zinc concentration is increased. Also, the 2‐dimentional (2‐D) growth hillocks are observed clearly on (110) face with contact AFM. The crystal growth occurs on monomolecular steps generated by 2‐D nucleation and followed by layer‐by‐layer expansion, and the macro‐steps formed onto the surface before spreading laterally as step bunches. The zinc ions are incorporated in growth steps as the zinc concentration is increased. The mechanism of inorganic impurity on molecular crystallization growth is still unclear. However, the incorporation of impurities may significantly affect growth kinetics of defect structure, and the bulk properties of molecular crystals. (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Heteroepitaxy of ferrite-spinel layers by CVD method

The nucleation mechanism, the substructure, the inner stresses, and the formation of different dislocation structures were studied in the epitaxial ferrospinel layers. Monocrystalline layers of Mg-Mn-, Min- and Li-ferrites were grown by the CVD method in a small gap on MgO substrates. The initial growth stage begins with the formation of three-dimensional nuclei, but after their coalescence the mechanism of layer-to-layer growth is realized. X-ray topographical study shows that the layer structure up to 6 μm thick was formed by slip steps but above 10 μm by cleavage steps. The residual elastic compressive stresses studied by X-ray tensometry are about 6 × 10⁸ N/m². The development of dislocation structure of layers depending on their thickness and growth conditions was studied by means of optical and scanning electron microscopy: for synthesis temperatures up to 1200 K only the dislocation sliping was observed, above 1370 K their overcreeping occurred.     

Growth morphology of {100} faces of L‐Arginine phosphate monohydrate single crystals investigated by atomic force microscopy

Morphology of the {100} faces of L‐arginine phosphate monohydrate (LAP) single crystal grown at 25 °C at a supersaturation of 0.32 has been discussed. The rectangular dislocation growth hillocks elongate along the b direction, which manifests the fast growth due to the strong Period Bond Chain (PBC) bonds along this direction. Apart from that, the growth hillocks are consistent with the macro‐morphology of the crystal grown at the pH value of about 4.2. The lopsided shapes of the hillocks result from step bunching. Triangular pits are assumed to form during the process of the steps getting across the impurities. The hollow cavities existing on the growth hillocks also elongate along the b direction and they can lead to the formation of other defects such as dislocations. (© 2004 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Micromorphology of as-grown surfaces of crystals

This paper describes and discusses the micromorphology of as-grown surfaces of single crystals. After a brief introduction to the methods of observation of surfaces, the mechanism of growth and development of crystals is first outlined. Here the formation of bunches and macrosteps, the relationship between the growth mechanism and the surface entropy factor, and the effect of impurities on the surface morphology are described. Common structures observed on the as-grown surfaces are then explained in relation to growth conditions of the crystals. The following growth structures are described: elementary spirals, macrospirals, hillocks of dislocation and nondislocation origin, interlacing and slip patterns, macrosteps, inclusions, block structures, growth striations and impurity striations.     

Growth mechanism of crystals from aqueous solutions

Microscopic processes occurring on the surface of a growing crystal or a dissolving one were observed by microcinematography. The crystals under observation were grown either in a drop of solution by evaporation or in a constant-temperature microscope stage at a chosen supersaturation. Small (approx. 0.1 mm) and large (approx. 10 mm) crystals of NaCl, Pb(NO₃)₂, NaNO₃, CdI₂, KDP and ADP were studied. It is concluded qualitatively that the layers, in general polygonal, originating in one or several active centres, are formed on the crystal face, never at the corners or edges. – The average velocity of layer motion was studied quantitatively in dependence on their thickness and supersaturation. The layer motion at constant supersaturation considerably fluctuated. – Surface patterns created by moving layers agree in most cases with predictions of the dislocation theory. Two categories of steps were found on the surface: ”︁real”︁ macrosteps and shock waves. – The velocity of layer motion for most compounds lies within (1–10) · 10⁻⁴ cm · s⁻¹.     

Macrosteps dynamics and the growth of crystals and epitaxial layers

Step pattern stability of the vicinal surfaces during growth was analyzed using various surface kinetics models. It was shown that standard analysis of the vicinal surfaces provides no indication on the possible step coalescence and therefore could not be used to elucidate macrostep creation during growth. A scenario of the instability, leading go macrostep creation, was based on the dynamics of the step train, i.e. the step structure consisting of the high (train) and low (inter-train) density of the steps. The critical is step motion at the rear of the train which potentially leads to the step coalescence i.e. creation of the double and multiple step. The result of the analysis shows that the decisive factor for the step coalescence is the step density ratio in and out of the train. The ratio lower than 2 prevents double step formation irrespective of the kinetics. For higher ratio the coalesce depends on step kinetics: fast incorporation from lower terrace stabilizes the single steps, fast incorporation from upper leads to step coalescence. The double step is slower than the single steps, so the single steps behind catch up creating multistep and finally macrostep structure. The final surface structure consists of the macrosteps and superterraces, i.e. relatively flat vicinal segments. The macrostep alimentation from lower superterrace leads to emission of the single steps which move forward. Thus the single step motion is dominant crystal growth mode in the presence of the macrosteps. These steps finally are absorbed by the next macrostep. The absorption and emission of single steps sustain the macrostep existence, i.e. the macrostep fate is determined the single step dynamics. The condition for single step emission was derived. In addition, the macrosteps are prone to creation of the overhangs which results from surface dynamics coupling to impingement from the mother phase. The angular preferential access of the bulk material to the macrostep edge, leads to the overhang instability and creation of inclusions and dislocations.     

In situ AFM investigation of 2D nucleation on the (100) face of KDP

Surface morphology of the (100) face of potassium dihydrogen phosphate (KDP) crystals which were grown at different supersaturations at 25 °C was investigated by in situ atomic force microscopy (AFM). Various AFM images of 2D nucleation under different growth conditions were presented. It is found that the growth of KDP is controlled by polynuclear nucleation mechanism at the high supersaturation. With reduction of the supersaturation, the growth velocity of 2D nuclei becomes very slow and shows typical anisotropy. It is found that the process of coalescence of 2D nuclei does not lead to defect. The experiments show that the growth mechanism for KDP at 25 °C changes between step flow and 2D nucleation in the supersaturation range of 4.5‐5%. The triangular nuclei which are close to equilateral triangle are observed in the experiment at the supersaturation σ = 6% for the first time, showing typical anisotropic growth. Through observing the dissolution of 2D nuclei, the dissolving process can be regarded as the reverse process of growth. We also find that the microcrystals landing on the surface at σ = 9% would grow and coalesce with each other and there is no observable defect in the coalescence. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Growth mechanisms,polytypism, and real structure of kaolinite microcrystals

The mechanisms of growth of kaolinite microcrystals (0.1–5.0 μm in size) at deposits related to the cluvial weathering crust, as well as to the low-temperature and medium-temperature hydrothermal processes of transformations of minerals in different rocks in Russia, Kazakhstan, Ukraine, Czechia, Vietnam, India, Cuba, and Madagascar, are investigated using transmission electron microscopy and vacuum decoration with gold. It is established that kaolinite microcrystals grow according to two mechanisms: the mechanism of periodic formation of two-dimensional nuclei and the mechanism of spiral growth. The spiral growth of kaolinite microcrystals is dominant and occurs on steps of screw dislocations that differ in sign and magnitude of the Burgers vector along the c axis. The layered growth of kaolinite originates from a widespread source in the form of a step between polar (+ and ?) dislocations, i.e., a growth analogue of the Frank-Read dislocation source. The density of growth screw dislocations varies over a wide range and can be as high as ～10⁹ cm^?2. Layered stepped kaolinite growth pyramids for all mechanisms of growth on the (001) face of kaolinite exhibit the main features of the triclinic 1Tc and real structures of this mineral.     

Nature of dislocations promoting growth in liquid phase epitaxy of gallium arsenide

Dislocations promoting growth in the course of liquid phase epitaxy (LPE) of GaAs layers on GaAs substrates are analysed by X-ray topography. The Burgers vectors are determined by comparing double-crystal back-reflection images with calculated misorientations taking into account surface relaxation. Any dislocation which generates a spiral of elementary steps is found to have a Burgers vector component parallel to the macroscopic growth direction. The nature of these growth promoting dislocations may be between pure screw and pure edge type. Defects which might be responsible for the generation of the observed concentric growth step patterns are below the detection limit of current X-ray topography.     

Effect of dislocation loops in macroscopically dislocation-free GaP substrates on the perfection of homo-epitactic deposits

Substrates and epitactic layers of GaP are etched under optimized conditions with the defect-revealing, preferential R-C etchant and subsequently examined using high-magnification (about 2500X) optical microscopy techniques. It is possible then to distinguish two new phenomena, viz. etch pits characteristic of dislocation loops in the substrate, and inclined dislocation dipoles in the layer. For layers grown on dislocation-free substrates we find that (i) the surface densities of both defects are equal (～5 × 10⁵cm^-2), and (ii) the average diameter of the dislocation loops in the substrate is roughly the same as the average distance between the two dislocations of the dislocation dipoles (0.5?1μm). Hence the perfection of these layers is determined by interfacial dislocation loops. Because the density of dislocation loops is only about a factor of two lower in highly (～1 × 10⁵ cm^-2) dislocated substrates, growth on these substrates results in layers which have even slightly lower dislocation density than layers grown on dislocation-free substrates. In the former case also single dislocations in the substrate propagate into the layer. Minority-carrier lifetime data indicate that minority-carrier recombination at dislocations is a restrictive factor for the luminescence quality of layers grown both on dislocation-free and highly-dislocated substrates.