Influence of pressure on the electric-field-induced phase transitions in liquid crystals

Within the framework of Landau-de-Gennes formulation, we analyse the effect of pressure on electric-field-induced phase transitions in a liquid crystal which shows spontaneously an isotropic-smectic A transition. Inferring from the experimental pressure dependences on the layer spacing in smectic A phase, as well as the nematic-smectic A metastable temperature T^*_AN, we incorporated the pressure dependence in the free energy through (the surface energy term) and the coupling between the quadrupolar nematic ordering Q_ij and the smectic order parameter ψ. From the S-T phase diagram, we found that the stability of field-induced nematic phase increases with pressure, whereas the discontinuity of the transition decreases. Also, the region where paranematic phase transits directly to smectic A phase increases with pressure.     

Probing the material properties and phase transitions of ferroelectric liquid crystals by determination of the Landau potential

The full Landau potential of several, widely varying ferroelectric liquid-crystalline materials has been experimentally determined. Tilt angle and polarisation data is analysed across the SmA to SmC transition for varying applied electric-field amplitudes, allowing the determination of all the coefficients of the generalised Landau model of ferroelectric liquid crystals. The materials investigated encompass different materials, including low-polarisation mixtures to high-polarisation single-component materials. The materials also possess a variation in the order of the SmA to SmC phase transition from strongly first order to strongly second order. The effects of both the polarisation and order of phase transition of the system are discussed with respect to the various terms of the generalised Landau model. Further, the mechanisms behind the difference between a first- and second-order phase transition are discussed with respect to the Landau potential and the second Landau coefficient b .     

Studies on the nematic-isotropic phase transitions in liquid crystals

Compressibility-pressure relations in the region of nematic-isotropic phase transitions under constant temperature were studied, and the value of critical exponent was estimated.     

Positron diffusion and restoration of local symmetry breaking induced by positrons in liquid metals

We present the effective Lagrangian with spontaneously broken density (the hedgehog-like fluctuation) and the massive internal gauge fields, and propose one explanation for the increase of the positron diffusion length in the liquid metal phase with temperature. From the view point of the restoration of the spontaneously broken density around the positron, the positron diffusion length data in the liquid phase of Bi metal are analyzed.     

Surface transitions in nematic liquid crystals oriented with Langmuir-Blodgett films

In this paper two types of surface transitions in nematic liquid crystals are theoretically analyzed with a simple model in which the anchoring energy is the result of both steric and electric interactions. The physical model is proper to explain both the transition temperature experimentally observed in homeotropically aligned nematic liquid crystals, and the change in the mean molecular direction due to the variation of the number of surfactant films, piled on the boundary surfaces with the Langmuir-Blodgett technique.Partially supported by the TEMPUS program     

Positron annihilation in the quenched and electron-irradiated NiSb intermetallic compound

Samples of the near equiatomic NiSb compound were irradiated by 3 MeV electrons at 20 K or quenched from 1103 K and 1333 K and subsequently annealed isochronally. The behaviour of defects created by quench or irradiation were studied by the positron annihilation technique. Only one recovery stage was found around 425 K for quenched specimens, but two distinct stages (100 K and 425 K) were observed after irradiation. The 425 K stage is ascribed to the migration of Ni vacancies giving dislocation loops. The recombination of mobile interstitials with vacancies after irradiation is assumed to occur between 100 K and 250 K. Doppler broadening and lifetime variations of positrons as a function of the measuring temperature in these irradiation samples are discussed.     

Effect of pseudogap on the positronium in void

In ceramic high-Tc superconductor (Bi, Pb)₂Sr₂Ca₂Cu₃O₇ the anomalies in temperature dependence τ₂(T)-lifetime of positrons trapped by microvoids are observed in Tc-region [V.L. Sedov, S.N. Kuznetsov, O.A. Tsigelnik, N.N. Oleynikov, D.I. Grigorashev, Phys. Lett. A 222 (1996) 455; D. Sanyal, D. Banerjee, U. De, Phys. Rev. B 58 (1998) 15226]. This effect is considered on the basis of the model in which the positrons trapped in microvoids form positronium atoms, interacting with surrounding medium by the processes Ps↔e⁺+e⁻ [V.L. Sedov, O.A. Tsigelnik, Phys. Lett. A 332 (2004) 423]. It is shown that the local density of states of the interacting positronium forms the δ-peak near the lower boundary of the gap 2Δ at ω>−Δ. The conclusion was made that the experimentally observed discontinuous increase τ₂ at the transition of the superconducting phase into pseudogap state is the result of the discontinuous increased weight of the peak at this transition.     

Non-linear dielectric effect in the isotropic phase of ferroelectric liquid crystals

We use a phenomenological model to find theoretically the non-linear dielectric effect (NDE) in the isotropic phase above the isotropic to chiral smectic-C (I-SmC^*) phase transition. We find an analytical expression for the NDE in the isotropic phase above the I-SmC^* phase transition. The temperature dependence of the NDE is presented in the isotropic phase of the I-SmC^* phase transition.     

Non-linear dielectric effect in the isotropic phase of antiferroelectric liquid crystals

We have theoretically studied the non-linear dielectric effect in the isotropic phase of antiferroelectric liquid crystals on the basis of phenomenological theory. We find an analytical expression for the non-linear dielectric effect in the isotropic phase of the transition. The temperature dependence of the non-linear dielectric effect is presented in the isotropic phase of the transition.     

Defect study on electron irradiated GaAs by means of positron annihilation

Measurements of the positron lifetime and Doppler-broadened annihilation-radiation have been performed in electron-irradiated GaAs. The positron lifetime at the irradiation induced defects was 0.250 ns at 300 K. The defect clustering stage was found to occur at around 520–620 K, and the coarsening and annealing stage is believed to be above 620 K. Similar annealing stages were also observed in GaAs lightly doped with Si (0.2×10¹⁸ cm^–3). Both the lifetime and the S-parameter in the irradiated GaAs were found to decrease with temperature from 300 K to 100 K, suggesting the coexistence of shallow traps in electron irradiated GaAs.     

Positron annihilation in solid,liquid and undercooled melts of Co80Pd20

Positron annihilation measurements have been performed in solid, liquid and undercooled Co₈₀Pd₂₀ alloy using electromagnetic levitation as containerless processing method. The formation enthalpy for a single vacancy is H_1v = (1.7 ± 0.1) eV. In the melt, the thermal expansion continues linear in the undercooled phase and is larger than that of the solid alloy. The mean free volume in the liquid phase is slightly larger than the volume of a single vacancy. At the Curie temperatures of both solid and liquid phase, the S-parameter indicates no effect on the atomic structure. Different H₂ concentrations in the processing gas atmosphere have no detectable influence on the data.     

Influence of Dopants in ZnO Films on Defects

The influence of dopants in ZnO films on defects is investigated by slow positron annihilation technique. The results show S that parameters meet S_Al>S_un>S_Ag for Al-doped ZnO films, undoped and Ag-doped ZnO films. Zinc vacancies are found in all ZnO films with different dopants. According to S parameter and the same defect type, it can be induced that the zinc vacancy concentration is the highest in the Al-doped ZnO film, and it is the least in the Ag-doped ZnO film. When Al atoms are doped in the ZnO films grown on silicon substrates, Zn vacancies increase as compared to the undoped and Ag-doped ZnO films. The dopant concentration could determine the position of Fermi level in materials, while defect formation energy of zinc vacancy strongly depends on the position of Fermi level, so its concentration varies with dopant element and dopant concentration.     

Determination of positron beam parameters by various diagnostic techniques

Various diagnostic techniques have been applied at the neutron-induced positron source Munich NEPOMUC in order to determine the positron beam parameters such as intensity, beam shape and energy distribution. The positron beam intensity is determined by the detection of the annihilation radiation of positrons, which annihilate in a movable target. The use of a micro-channel plate (MCP) detector with a CCD-camera allows a direct measurement of the positron beam shape and the lateral resolved intensity distribution. At NEPOMUC a movable MCP-assembly inside the evacuated beam line enables a quick examination of the beam shape during operation. A retarding grid was mounted inside the homogeneous magnetic guiding field in order to determine the distribution of the longitudinal positron momentum, and hence estimate the energy distribution of the positrons.     

Anisotropy of the electron momentum distribution in Bi2Sr2CaCu2O8+δ superconductor studied by positron annihilation

The temperature dependent (30-300 K) Doppler broadening of the positron annihilated γ-radiation measurement has been investigated on single crystalline Bi₂Sr₂CaCu₂O_8+δ (Bi-2212) high T_c superconducting samples along two different crystallographic orientations. It has been observed that throughout the temperature range the electron momentum distribution has a larger value along the crystallographic c-axis than in the a-b plane. The temperature dependent Doppler broadened positron annihilation γ-radiation lineshape analysis shows a step like increase of S-parameter at the temperature region 92-116 K.     

Evolution of Structural Defects in SiOx Films Fabricated by Electron Cyclotron Resonance Plasma Chemical Vapour Deposition upon Annealing Treatment

We study the structural defects in the SiO, film prepared by electron cyclotron resonance plasma chemical vapour deposition and annealing recovery evolution. The photoluminescence property is observed in the as-deposited and annealed samples. [-SiO3]^2- defects are the luminescence centres of the ultraviolet photoluminescence （PL） from the Fourier transform infrared spectroscopy and PL measurements. [-SiO3]^2- is observed by positron annihilation spectroscopy, and this defect can make the S parameters increase. After 1000℃ annealing, [-SiO3]^2- defects still exist in the films.     

Surface and bulk investigations at the high intensity positron beam facility NEPOMUC

The NEutron-induced POsitron source MUniCh (NEPOMUC) at the research reactor FRM II delivers a low-energy positron beam (E = 15-1000 eV) of high intensity in the range between 4 × 10⁷ and 5 × 10⁸ moderated positrons per second. At present four experimental facilities are in operation at NEPOMUC: a coincident Doppler-broadening spectrometer (CDBS) for defect spectroscopy and investigations of the chemical vicinity of defects, a positron annihilation-induced Auger-electron spectrometer (PAES) for surface studies and an apparatus for the production of the negatively charged positronium ion Ps⁻. Recently, the pulsed low-energy positron system (PLEPS) has been connected to the NEPOMUC beam line, and first positron lifetime spectra were recorded within short measurement times. A positron remoderation unit which is operated with a tungsten single crystal in back reflection geometry has been implemented in order to improve the beam brilliance. An overview of NEPOMUC's status, experimental results and recent developments at the running spectrometers are presented.     

Birefringence and phase transitions in liquid crystals

The birefringence of liquid-crystalline phases is the result of the parallel order of molecules exhibiting a polarizability anisotropy. The magnitude and sign of the birefringence are determined by the structure and order of the liquid-crystalline phase types as well as by the polarizability properties of the constituent molecules. The characteristic change of the birefringence at phase transitions between liquid-crystalline phases indicates more or less pronounced structural changes. The temperature dependence of the birefringence is due to the temperature change of the molecular order.

It is shown that the structural variety of the liquid crystalline state is reflected by a big variety of their optical anisotropy properties.     

Reentrant phase transitions in liquid crystals

A comprehensive review of the recent developments regarding the phenomenon of reentrant phase transitions (RPT) in liquid crystals is presented. In addition to liquid crystals this phenomenon has been observed in amazingly diverse systems. A critical assessment of the experimental investigations concerning single and multiple reentrances is given. A brief account of the theoretical efforts is also given. The article ends with the identification of the factors which impede the proper understanding of the phenomenon.     

Ordering and phase transitions in liquid crystals

Structures and properties of different types of liquid crystals are discussed from a uniform point of view. Apart from the traditional mesophases (nematics, cholesterics, smectics), some new examples, including polymeric, metalloorganic and ferromagnetic liquid crystals, are also investigated. Systems with several macroscopic scales on which the type of ordering may differ, are described and analysed. Phase transitions and certain types of critical behaviour in different liquid crystals are studied.     

Secondary electron spectra of gold under bombardment by very low-energy positrons

Measurements of the secondary electron energy spectra resulting from very low-energy positron bombardment of a polycrystalline Au surface are presented. The low-energy part of the secondary spectra contain significant contributions from two processes: (1) annihilation-induced Auger electrons that have lost energy before leaving the surface and (2) secondary electrons resulting from direct energy exchange with an incident positron. Our data indicate that the second process (direct energy exchange with the primary positron) is still important at and below 3 eV incident beam energy. Since energy conservation precludes secondary electron generation below an incident beam energy equal to the difference between the electron and positron work functions (∼3 eV), the fact that we still observe significant secondary electron emission at energies at or below this value provides strong evidence that the incident positrons are falling directly into the surface state and transferring all of the energy difference to an outgoing secondary electron. These measurements were also used to obtain the first experimentally determined upper limit on the intensity of the spectrum of Auger-induced secondary electrons.