Compound Phase Formation in Thin Film Structures

Thin film compound formation during solid phase reaction, reactive deposition, ion-beam synthesis, and ion beam mixing is discussed in terms of the Effective Heat of Formation (EHF) model. This model defines an effective heat of formation ΔH′, which is concentration dependent. By choosing the effective concentration of the interacting species at the growth interface during solid phase reaction, to be that of the liquidus minimum, the model correctly predicts first phase formation during formation of silicides, germanides, aluminides, and other metal-metal binary systems. The ability to predict phase formation sequence and phase decomposition is also illustrated. The EHF model is also used to describe amorphous and metastable phase formation as well as the effect of impurities and diffusion barriers on phase formation. In the case of reactive deposition, the effective concentration is controlled by the rate at which thin film deposition is carried out and the temperature of the substrate. In this way epitaxial phases such as CoSi₂ and NiSi₂ can be formed directly at temperatures much lower than normally needed during solid phase reaction. During ion-beam synthesis silicon-rich compounds are expected to form during metal implantation into silicon- and metal-rich compounds for silicon implantation into a metal substrate. For ion-beam mixing, the effective concentration is not controlled by the mixing process at low temperatures, but by the liquidus minimum of the system at higher temperatures. For both ion-beam mixing and ion-beam synthesis, however, much work still needs to be done to correlate effective concentration with the various experimental parameters. The general trends of compound formation in these systems do, however, also correlate well with the predictions of the EHF model.     

Grating Formation in 13-demethyl Bacteriorhodopsin Film

Holographic properties of a 13-demethyl retinal bacteriorhodopsin (13-demethyl BR) film in gelatin matrix were investigated and compared to those of a native bacteriorhodopsin (BR_WT) film. A two-wave mixing experiment was performed to study the self-diffraction efficiency of the samples. The rise and the decay of the grating in the 13-demethyl BR film was measured. The film is relatively slow enabling the recording of simultaneous gratings. Phase conjugate reflectivity was measured by a four-wave mixing experiment. Diffraction efficiency and phase conjugate reflectivity of the 13-demethyl BR film were observed to be comparable to those of the BR^WT film.     

The Application of Heat Treatment in the Formation of Relief-Phase Holographic Structures on Dichromed Gelatin

Optics and Spectroscopy - A new method of formation of relief-phase holographic structure on dichromated gelatin (DCG) layers has been proposed. The method is based on two types of alternative...     

Pattern Formation in a Thin Solid Film with Interactions

We investigate a new type of surface instability of a thin elastic film subjected to surface interactions such as van der Waals and electrostatic forces from another solid surface in its vicinity. It is found that a sufficiently soft (shear modulus <10 MPa) and nearly incompressible film deforms to form an undulating pattern without any mass transport. A novel feature is that the characteristic length scale of the pattern is nearly independent of the nature and magnitude of the external force, but varies linearly with the film thickness. These results explain some recent experiments and are applicable to problems such as adhesion and friction at soft solid interfaces, peeling of adhesives, patterning of solid surfaces, etc.     

光谱学研究硅烷钒锆复合钝化膜的结构和成膜机理

在热镀锌钢板表面制备了硅烷钒锆复合钝化膜。用X射线光电子能谱(XPS)、射频辉光放电发射光谱(rf-GD-OES)和傅里叶变换衰减全反射红外光谱(ATR-FTIR)表征了钝化膜的组成结构,分析了硅烷钒锆复合钝化膜的成膜机理。结果表明：硅烷之间互联构成了硅烷钒锆复合钝化膜的主成膜成分,无机缓蚀剂均匀分布在膜层中。钝化膜表面Si2p的XPS窄幅扫描谱100.7 eV处的拟合峰和红外光谱在波数1 100 cm-1 Si—O吸收峰变宽加强,表明硅烷以Si—O—Zn键的形式化学吸附在锌的表面,硅烷分子之间通过Si—O—Si键相互交联;红外光谱中1 650和1 560 cm-1的两个酰胺特征峰,结合910 cm-1的环氧特征峰的消失,表明γ-GPT的环氧基团在氨基活性氢的诱导下开环和γ-APT的氨基之间发生聚合反应形成交联的空间网状结构;rf-GD-OES分析发现钝化膜0.3 μm处存在一层富氧层,钝化反应生成的ZrF₄,ZrO₂和钒盐等无机物均匀分布在钝化膜中。分析膜层组成结构和成膜前后的ATR-FTIR光谱,研究了成膜过程中发生的物理过程和化学变化,提出了硅烷钒锆复合钝化膜的成膜机理。     

超薄膜生长的Monte-Carlo研究

利用MonteCarlo(MC)模型研究了薄膜生长的初始阶段岛的形貌和岛的尺寸与基底温度之间的关系.模型中考虑了原子沉积、吸附原子扩散和蒸发等过程,与以前模型不同的是我们用Morse势计算粒子之间的相互作用,并详细考虑了临近和次临近原子的影响.结果表明,随基底温度的升高,岛的形貌经历了一个从分形生长到凝聚生长的变化过程.进一步研究表明,岛的形貌与基底的形貌之间的关系随着基底温度的升高有很大的变化,基底温度低时,岛的形状与基底形貌无关,高温时岛具有与基底形貌相似的结构.这些结果与实验结果一致.为了进一步说明 关键词：     

BOPET薄膜生产过程中模头流出物的红外光谱分析

本文通过模头流出物和正常 BOPET薄膜的红外光谱分析。确认模头流出物含有不同于正常聚酯(PET)的结构 ,在分子结构中存在 CH2 O CH2 、 C6H4(CO) CH2 、 (CH2 ) n 〔n>4〕、C6H4O CH2 、 C6H4CH2 和 CH 等新的结构     

Transformation Process of the Magnetron-Sputtered Ag2O Film in Hydrogen Annealing

The current paper addresses the effect of the hydrogen partial pressure on the microstructure and transformation of the Ag₂O film. The transformation process and mechanism were also analyzed in detail. Increasing the hydrogen partial pressure can accelerate the transformation of Ag₂O to Ag and lower the critical transformation temperature of the film due to the enhanced hydrogen reduction and to both of the lowered activation energy of the reaction of Ag₂O with hydrogen and enhanced lattice strain of the Ag₂O film. Hydrogen-involved reaction in the whole hydrogen annealing process is mainly hydrogen reduction reaction with Ag₂O. Diffusion of hydrogen and gaseous H₂O molecules accompanies the whole hydrogen annealing process.     

Formation of Dislocations in the Process of Impurity Diffusion in GaAs

Russian Physics Journal - A study of the formation of dislocations in the process of impurity diffusion in GaAs has been carried out. The formation of dislocations in GaAs diffusion layers doped...     

Optimization of (002)-Oriented ZnO Film Synthesis in Sol-Gel Process and Film Photoluminescence Property

By orthogonal design theory, technological parameters of the (002)-oriented ZnO film prepared in sol-gel process are optimized. A set of technological parameters for growing highly (002)-oriented ZnO film is obtained. As a result, it is proven that the Zn²⁺ concentration is the most important factor to grow a highly (002)-oriented ZnO film. We take an appropriate Zn²⁺ concentration 0.35mol/L for the aimed film, of which photoluminescence property is better than those of the films derived from other Zn²⁺ concentrations precursor solution. The Zn²⁺ concentration either larger or smaller than 0.35mol/L leads to the (002)-oriented degree decrease of films. By employing an atom force microscope, a hexagonal atom arrangement, which indicates that the film site detected is a ZnO single crystal, is observed in the surface of the highly (002)-oriented film.     

Formation of a Wave Structure on the Surface of a Graphene Film

A wavy structure of the surface of graphene nanoparticles on a hydrocarbon substrate has been obtained. It has been shown that the wavy surface is the manifestation of the Kelvin-Helmholtz instability at the interface between liquid paraffin and graphene suspension with the inhomogeneity length λ = 250 nm. The manifestation of such wavy structures is due primarily to van der Waals forces.

     

物理教学中应注重知识的形成过程

1 状态和过程 状态是过程的开始或结果,过程是状态的集合.世界存在的形态就是正在进行的过程和业已定型(或瞬时定型)的状态两大类.     

Formation of Interfacial Layers in LaAlO3/Silicon during Film Deposition

We have studied the interracial reactions between amorphous LaAlO3 thin films and Si substrates, using high- resolution transmission electron microscopy and x-ray photoelectron spectroscopy. It has been shown that the interracial layer between LaAlO3 film and Si substrate chemical states show that the ratio of La 4d3/2 to Al 2p is SiLaxAlyOz. The depth distributions of La, Si and Al of the interfacial layer remains unchanged with the depth compared to that of the LaAlO3 film. Moreover, the Si content, in the interracial layer gradually decreases with increasing thickness of the interracial layer. These results strongly suggest that the Al element is not deficient in the interracial layer, as previously believed, and the formation of a SiLaxAlyOz interracial layer is mainly due to the diffusion of Si from the substrate during the LaAlO3 film deposition. With the understanding of the interracial layer formation, ones can control the interface characteristics to ensure the desired performances of devices using high-k oxides as gate dielectrics.     

明胶大分子中的正电子湮没行为

利用正电子湮没寿命谱 ,从分子尺度上对两种分别从深海鱼皮和牛骨提取的明胶大分子的微观结构性能进行了研究 .正电子湮没寿命谱的长寿命组分给出了关于明胶大分子中自由体积空穴的信息 .结果表明 ,鱼明胶大分子中自由体积空穴的尺度与数量均低于骨明胶大分子 .同时 ,用鱼明胶和骨明胶作为成核分散介质的乳剂试验表明 ,鱼明胶可以改善卤化银颗粒的单分散性并抑制晶核的生长和聚结 .由此认为 ,明胶作为保护性胶体的功能与其微结构特征相关 .鱼明胶在控制卤化银颗粒成核与生长中的功能强于骨明胶 .     

燃煤碳烟生成的实验研究

本文利用Hencken型的平面燃烧器，以激光诱导白炽光（LII）和平面激光诱导荧光（PLIF）系统对燃煤碳烟的生成进行在线测量。对直径4—12mm的煤柱颗粒开放式燃烧的OH和碳烟颗粒进行PLIF和LII的实验结果表明，燃煤形成碳烟和挥发分火焰几乎同时出现和消失，煤柱产生碳烟的持续时间约和煤柱颗粒的粒径的1．8次方呈正比...     

反向外延生长3C-SiC薄膜中残余应力的工艺优化

本文为改善反向外延生长3C-SiC薄膜中残余应力的工艺优化方法,采用LPCVD技术,将甲烷和氢气按1∶10比例混合后与n-Si(111)衬底反应,制备3C-SiC薄膜。通过X射线衍射分析仪、激光拉曼光谱仪和场发射扫描电子显微镜进行测试和分析。在该方法中,反应恒温1200℃为最优温度,反应温度过高或过低都不利于3C-SiC薄膜生长;在反应温度为1200℃时,为增加薄膜厚度而单纯增加反应时长,缺陷浓度也会相应地增加,从而薄膜结晶质量相应降低;但在1250℃反应温度时,增加反应时长不仅会增加薄膜的厚度,而且也会缓减薄膜中残余应力,同时改善薄膜的结晶质量。另外研究结果还表明:1250℃时经过一个恒温的等时退火工艺后,再降温的方式可进一步降低薄膜中本征残余应力,从而改善薄膜的结晶质量和晶格失配。     

蛋白质与表面活性剂相互作用的导数紫外光谱

利用四阶导数紫外光谱法研究了在pH=7.40,离子强度I=0.0131mol·L-1的磷酸盐缓冲溶液中,浓度为1.0g·L-1的牛血清白蛋白（BSA）与十二烷基硫酸钠（SDS）相互作用的过程中,芳香族氨基酸残基微环境极性的变化.通过研究发现,随着SDS浓度的不断增大,三种芳香族氨基酸残基微环境极性的变化趋势不同,从而可以判断BSA与SDS相互作用过程中BSA构象的变化.     

Condensation Surface Temperature as a Means for Studying Film Formation Mechanisms

A rise in the condensation surface temperature during film growth is a result of energy dissipation on the condensation surface. An example of energy dissipation is the dissipation of chemical reaction heat, which releases during film deposition by reactive magnetron sputtering. The monitoring of the surface temperature during TiN film deposition by reactive (Ti–in–N₂) and nonreactive (TiN–in–Ar or TiN–in–N₂) sputtering methods has shown that this temperature is higher in the reactive case and decreases in the (TiN–in–Ar)–(TiN–in–N₂) sequence of nonreactive sputtering modifications. It has been found that the composition and crystal structure of TiN films do not depend on the growth method and are identical to those of bulk titanium nitride. Based on these results, a formation mechanism of films obtained by the above methods has been suggested. In the case of reactive sputtering, the film was supposed to grow on the condensation surface through a reaction between titanium and nitrogen atoms. In the cases of nonreactive sputtering, the film forms from TiN molecules.