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1.
We present a diode-pumped Yb:KYW microchip laser. The passive Q-switchedand CW regimes of operation for the Yb:KYW microchip laser have been investigated. An efficiency for CW operation of up to 10% with regard to incident pump has been obtained. Raman self-frequency conversion in the Q-switched regime has been observed. Received: 27 May 2002 / Revised version: 4 July 2002 / Published online: 15 November 2002 RID="*" ID="*"Corresponding author. Fax: +375-17/2840-879, E-mail: asg@dragon.bas-net.by  相似文献   

2.
A diode-laser-array end-pumped acousto-optically Q-switched intracavity frequency-doubled Nd:GdVO4/KTP green laser, formed with a three-mirror folded resonator, has been demonstrated. With 15 W of pump power incident upon the Nd:GdVO4 crystal, a maximum average green output power of 3.75 W was obtained at 50 kHz of pulse repetition frequency, giving an optical conversion efficiency of 25%, whereas the effective intracavity frequency-doubling efficiency was determined to be 72%. At the incident pump power of 12.8 W, the shortest laser pulse was achieved at a pulse repetition rate of 10 kHz, the resulting pulse width, single pulse energy, and peak power were measured to be 35 ns, 108 μJ, and 3.1 kW, respectively. Received: 18 May 2000 / Published online: 20 September 2000  相似文献   

3.
cw Raman lasing of Na2 molecules generated in a heated, sealed-off, all-sapphire cell is demonstrated. Being not damaged by highly corrosive alkaline vapours, this type of cell enables operation without buffer gas in contrast to the normal heatpipe operation of these lasers. This allows us to study Raman lasers in alkaline vapours in new regimes and under ideal conditions. With an argon ion pump laser at 488 nm, Raman laser operation at 525 nm with more than 10% efficiency and thresholds below 0.2 mW for a cell without buffer gas (length 9 cm) have been obtained so far. The low thresholds, being a factor of 10 less than for comparable heatpipe operation, gives us the chance to use low-power diode lasers as pump sources and to realize compact reliable Raman laser systems. Received: 17 May 1999 / Published online: 25 August 1999  相似文献   

4.
A passively Q-switched Yb:YAG microchip laser   总被引:1,自引:0,他引:1  
We present a diode-pumped passively Q-switched Yb:YAG microchip laser, using a semiconductor saturable absorber mirror. We obtained pulses with 1.1-μJ energy, 530-ps duration, 1.9-kW peak power, and a repetition rate of 12 kHz. The laser is oscillating in a single longitudinal mode. Received: 23 October 2000 / Published online: 7 February 2001  相似文献   

5.
By using holographic shear interferometry, we have measured the thermal lens in a diode-pumped Yb:YAB crystal, under lasing and non-lasing conditions, as a function of absorbed power. From these purely optical measurements we estimate the fractional thermal loading and the thermal conductivity of Yb:YAB. Knowledge of these thermal parameters is essential for the optimisation of Yb:YAB laser cavity designs. Received: 5 February 2002 / Final version: 22 November 2002 / Published online: 26 February 2003 RID="*" ID="*"Corresponding author. Fax +61-2/9850-8915, E-mail: Judith@ics.mq.edu.au  相似文献   

6.
4 laser and this produced 1.5-ns pulses of 7 kW peak power at a repetition rate of 20 kHz. Received: 11 May 1998  相似文献   

7.
A Nd:YVO4 laser, end-pumped by a fiber-coupled diode-laser array, generates 7.3 W of output power at 1342 nm, the highest so far reported for this host crystal. The slope efficiency is 40% and the output-beam divergence is close to the diffraction limit. An important point in attaining such results is the choice of crystals with low Nd concentration. Received: 16 July 2002 / Published online: 25 October 2002 RID="*" ID="*"Corresponding author. Fax: +39-050/844333, E-mail: dilieto@df.unipi.it RID="**" ID="**"Permanent address: Scuola Normale Superiore, Piazza dei Cavalieri 7, Pisa, Italy  相似文献   

8.
Yb:Ca4YO(BO3)3 (Yb:YCOB) crystal with good quality and large size has been grown by the Czochralski method. The polarization absorption and fluorescence spectra have been measured. The laser action of the Yb:YCOB crystal has been demonstrated when it is pumped by a fiber-coupled laser diode (LD) at the wavelength of 976.4 nm. The pumping threshold is 55 mW, the light-light conversion efficiency is 58.7%, and a slope efficiency of up to 73% is thus calculated. Received: 16 December 1998 / Revised version: 4 February 1999 / Published online: 7 April 1999  相似文献   

9.
cw dual-wavelength operation of a diode-end-pumped Nd:YVO4 laser   总被引:16,自引:0,他引:16  
A dual-wavelength continuous wave (cw) diode-end-pumped Nd:YVO4 laser that generates simultaneous laser action at the wavelengths 1064 nm and 1342 nm is demonstrated. The optimum oscillation condition for the simultaneous dual-wavelength operation in a diode-end-pumped solid-state laser has been derived. The relationship between the laser cavity and the output stability is also studied. Experimental results show that the stability of the output power at the two wavelengths could be enhanced by use of a three-mirror cavity. Received: 26 August 1999 / Revised version: 11 October 1999 / Published online: 23 February 2000  相似文献   

10.
We report a stable high power and high beam quality diode-side-pumped CW green laser from intracavity frequency doubled Nd:YAG laser with LBO crystal. By using a advanced resonator, a large fundamental mode size in the laser crystal and a tight focus in the nonlinear crystal could be obtained simultaneously, which are favorable for high power and high beam quality CW green laser generation. The green laser delivered a maximum 532 nm output power of 40 W. The corresponding optical-to-optical conversion efficiency and electrical-to-optical conversion efficiency were 8.6% and 5.0%, respectively. Under 532 nm output power of 34 W, the beam quality factor was measured to be 1.6.  相似文献   

11.
4 crystals under low-power laser diode end-pumping. Output power dependencies on the pump power and the pump wavelength of these diode-pumped solid state lasers were investigated. The high Nd3+ concentration of the Nd:KGW samples used in our measurements as well as up-conversion and exited-state absorption processes in Nd:KGW cause the reduced laser output power dependence on the pump wavelength which was experimentally observed. At pump levels up to 270 mW a slope efficiency of ηsl≈46% was reached for the Nd:KGW laser. Nd:KGW microchip laser operation with a slope efficiency of ηsl≈50% was demonstrated. Thermal lensing in Nd:KGW at pump powers up to 3 W was measured. Received: 4 August 1997  相似文献   

12.
4+ :YAG passive element. Energies up to 1.1 J and 550 mJ, respectively, are obtained with a total efficiency close to 3%. Received: 29 May 1996  相似文献   

13.
The laser performance of the Nd:KGW crystal has been studied in a master oscillator and power amplifier configuration (MOPA). Several crystals from two different producers were investigated for the oscillator and the amplifier. A maximum single-pass gain of 25 was observed in free-running and Q-switched mode. We obtained a maximum output amplified energy of 400 mJ at 30 Hz (with a pulse duration of 10 to 30 ns) with a divergence less than 3 mrad. We also studied the limitations of this configuration due to the very high gain of the Nd:KGW crystal. Received: 21 September 1998 / Revised version: 10 January 1999 / Published online: 19 May 1999  相似文献   

14.
A comparative study of Nd:KGW and Nd:YAG laser crystals pumped by flashlamp has been conducted near 1.3 μm with output energy up to 1 J and at a repetition rate up to 50 Hz. An average power of 23 W for KGW in free-running mode was achieved with a total efficiency better than 2.8 % for the Nd:KGW and 1.8 % for the Nd:YAG. Received: 9 December 1996 / Revised version: 10 February 1997  相似文献   

15.
An injected microchip laser is theoretically studied, with the use of two models: in the first model, which is traditional, the field is represented by a single frequency component in the slowly-varying envelope approximation. In the second model, referred to as the Fabry-Perot model, two field components are considered which are respectively centered around the frequency of an eigenmode of the injected laser and the frequency of the injected field. Computation of locking ranges, bistability do mains are performed and the results compared. They show not only an improved precision of the second model but also a necessity to use it to describe some effects such as the bistable domains in the limits of the locking domains. Received: 1st April 1998 / Accepted: 21 August 1998  相似文献   

16.
The lasing properties of organic compounds in a polymethylmethacrylate matrix pumped by a copper vapor laser are studied. The results demonstrate that the transverse pumping scheme of solid-state laser-active media with the copper vapor laser is promising compared to the longitudinal pumping scheme from the viewpoint of the lifetime parameters. Received: 6 February 2002 / Published online: 2 May 2002  相似文献   

17.
Intracavity sum-frequency mixing of 1.06 μm and 532 nm in YCa4O(BO3)3 (YCOB) crystals cut for different type-I phase-matching directions of (θ,ϕ)=(106°,77.2°), (111°, 79.6°) and (65°, 82.8°) was investigated in a compact diode-end-pumped acousto-optical Q-switched Nd:YVO4/KTP laser formed with a three-mirror folded resonator. The maximum 355-nm average output power of 124 mW was obtained in the phase-matching direction of (106°, 77.2°) with a pump-to-ultraviolet conversion efficiency of 3.3% at the repetition frequency of 20 kHz. Received: 17 September 2001 / Revised version: 27 November 2001 / Published online: 17 January 2002  相似文献   

18.
We recently demonstrated that passive mode locking of a thin-disk Yb:YAG laser is possible and that this concept leads to sources of femtosecond pulses with very high average power. Here we discuss in detail the effect of spatial hole burning on the mode-locking behavior of such lasers. We have developed an efficient numerical model and arrive at quantitative stability criteria which agree well with experimental data. The main result is that stable soliton mode locking can in general be obtained only in a certain range of pulse durations. We use our model to investigate the influence of various cavity parameters and the situation for different gain media. We also consider several methods to reduce the effect of spatial hole burning in order to expand the range of possible pulse durations. Received: 4 September 2000 / Published online: 10 January 2001  相似文献   

19.
Spectroscopic data of a V3+:YAG passive Q-switch crystal were measured. The absorption recovery time was determined to be of 37±7 ns and the ground state absorption cross section was estimated to be 0.7×10-18 cm2 at 1.44 μm and 3.5×10-18 cm2 at 1.34 μm. Passively Q-switched operation of diode pumped 1.44 μm and 1.3 μm Nd:YAG lasers was demonstrated using this crystal as saturable absorber. Average output powers of 1.42 W (1.44 μm) and 1.56 W (1.34 μm) and pulse energies of 24 μJ (1.44 μm) and 25 μJ (1.34 μm) were observed, respectively. Received: 19 August 2002 / Published online: 12 February 2003 RID="*" ID="*"Corresponding author. Fax: +49-40/42838-6281, E-mail: kretschmann@physnet.uni-hamburg.de  相似文献   

20.
Efficient distributed feedback solid state dye laser with a dynamic grating   总被引:4,自引:0,他引:4  
We present the first operation of a distributed feedback solid state dye laser with a dynamic, pump-induced grating. Broadly tunable, narrow band operation in the region of 616 nm (604–649 nm) has been demonstrated with perylene red laser dye doped in poly(methyl methacrylate) (PMMA), when pumped with a frequency doubled Nd:YAG laser. Conversion efficiencies of 20%, corresponding to 35% optical-to-optical efficiency, have been measured. The laser bandwidth was between 0.01 and 0.04 nm, and smooth tuning over more than 200 GHz has been demonstrated. Received: 29 March 1999 / Published online: 24 June 1999  相似文献   

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