以太网芯片重离子单粒子效应试验

为评估和研究工业以太网芯片KSZ8851-16MLLJ在空间环境中的适应性,利用重离子源对芯片进行了单粒子试验。根据以太网芯片的结构和功能制订了单粒子实验方案,得出了实验数据,并对实验数据进行了整理和研究。实验和研究表明：工业以太网芯片KSZ8851-16MLLJ具有一定的抗单粒子辐射能力;在不同网络传输条件下,发生单粒子翻转的机率也不相同;在持续的单粒子辐射下,以太网芯片会发生电流阶跃,第二次电流阶跃时产生单粒子锁定,在工程应用中可以利用电流阶跃监测芯片的辐射水平。     

薄栅氧化层中陷阱电荷密度的测量方法

提出了一种测量陷阱电荷密度的实验方法,该方法根据电荷陷落的动态平衡方程,利用恒流应力前后MOS电容高频CV曲线结合恒流应力下栅电压的变化曲线求解陷阱电荷密度及位置等物理量.给出了陷阱电荷密度的解析表达式和相关参数的提取方法和结果.实验表明这种方法方便而且具有较高的精度 关键词： 薄栅氧化膜 经时击穿 恒流应力 陷阱电荷密度     

Mechanism of single-event transient pulse quenching between dummy gate isolated logic nodes

As integrated circuits scale down in size,a single high-energy ion strike often affects multiple adjacent logic nodes.The so-called single-event transient(SET)pulse quenching induced by single-event charge sharing collection has been widely studied.In this paper,SET pulse quenching enhancement is found in dummy gate isolated adjacent logic nodes compared with that isolated by the common shallow trench isolation(STI).The physical mechanism is studied in depth and this isolation technique is explored for SET mitigation in combinational standard cells.Three-dimensional(3D)technology computer-aided design simulation(TCAD)results show that this technique can achieve efficient SET mitigation.     

Investigation of gate oxide traps effect on NAND flash memory by TCAD simulation

The effects of gate oxide traps on gate leakage current and device performance of metal–oxide–nitride–oxide–silicon(MONOS)-structured NAND flash memory are investigated through Sentaurus TCAD. The trap-assisted tunneling(TAT)model is implemented to simulate the leakage current of MONOS-structured memory cell. In this study, trap position, trap density, and trap energy are systematically analyzed for ascertaining their influences on gate leakage current, program/erase speed, and data retention properties. The results show that the traps in blocking layer significantly enhance the gate leakage current and also facilitates the cell program/erase. Trap density ~10¹⁸ cm^-3 and trap energy ~ 1 eV in blocking layer can considerably improve cell program/erase speed without deteriorating data retention. The result conduces to understanding the role of gate oxide traps in cell degradation of MONOS-structured NAND flash memory.     

可用于光存储的氧化物、次氧化物薄膜材料的研究及发展

介绍了可用于可录、可擦除、全息光存储及超分辨掩膜层的氧化物、次氧化物薄膜材料的种类、制备方法、光存储特性和存储机制。这类薄膜材料由于具有种类多、应用范围广、制备方法多样、写入灵敏度高和记录稳定性好等优点 ,正受到各国研究者越来越多的关注。分析总结了这类材料的研究现状、存在的主要问题和未来发展方向     

The pushing gate in a planar Coulomb crystal using a flat-top laser beam

We propose a pushing gate for entangling two ions in a planar Coulomb crystal in the view of realizing large-scale quantum simulations. A tightly focused laser is irradiated from the direction perpendicular to the crystal plane and its spatial intensity profile generates a state-dependent force. We analyze the error sources in this scheme and obtain low infidelity.     

Synthesis of tin oxides SnO2–x in the entire composition range (x = 0 to 1) by ion‐beam sputter‐deposition

Ion‐beam sputter‐deposition (IBSD) was used to reactively deposit tin oxide crystalline films at oxygen fluxes of 3–15 sccm and at substrate temperatures of 100–600 °C. Analysing the samples by X‐ray diffraction and Raman spectro‐ scopy yields a map of the crystalline structures in dependence on the growth parameters. In addition to SnO₂, pure SnO films of high quality and an intermediate phase such as Sn₂O₃ or Sn₃O₄ can be reproducibly obtained. Thus, IBSD is, to our knowledge, the only thin‐film deposition technique verified yet to reliably produce samples in the entire composition range of tin oxides. (© 2015 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim)     

Effect of gate engineering in JLSRG MOSFET to suppress SCEs: An analytical study

In this work, an analytical model of gate-engineered junctionless surrounding gate MOSFET (JLSRG) has been proposed to uncover its potential benefit to suppress short-channel effects (SCEs). Analytical modelling of centre potential for gate-engineered JLSRG devices has been developed using parabolic approximation method. From the developed centre potential, the parameters like threshold voltage, surface potential, Electric Field, Drain-induced Barrier Lowering (DIBL) and subthershold swing are determined. A nice agreement between the results obtained from the model and TCAD simulation demonstrates the validity and correctness of the model. A comparative study of the efficacy to suppress SCEs for Dual-Material (DM) and Single-Material (SM) junctionless surrounding gate MOSFET of the same dimensions has also been carried out. Result indicates that TM-JLSRG devices offer a noticeable enhancement in the efficacy to suppress SCEs by as compared to SM-JLSRG and DM-JLSRG device structures. The effect of different length ratios of three channel regions related to three different gate materials of TM-JLSRG structure on the SCEs have also been discussed. As a result, we demonstrate that TM-JLSRG device can be considered as a competitive contender to the deep-submicron mainstream MOSFETs for low-power VLSI applications.     

The surface science of semiconductor processing: gate oxides in the ever-shrinking transistor

Due to the extreme dimensional scaling required by Moore's law, Si device technology is increasingly subject to the limitations imposed by the intrinsic physics and chemistry of surfaces and interfaces. In this review we outline ways in which fundamental surface science has contributed an understanding to the microelectronics community and discuss areas where surface science may impact future development. We focus on the example of silicon dioxide (SiO₂) on silicon, since this interface lies at the heart of modern transistor technology and has therefore received a great deal of attention in recent years. We highlight a number of experimental and theoretical approaches that have elucidated the fundamental phenomena associated with the formation and evolution of this critical technological interface, revealing the remarkable interdependence of science and technology that now characterizes this rapidly evolving industry.     

在RHIC-PHENIX中观测到的AuAu和CuCu碰撞中已鉴别强子产物的标度率特性

Particle type dependences of hadron yield and emission patterns, especially its difference between mesons and baryons, at intermediate p_{T(2—5GeV/c) is one of the findings in heavy ion collisions at RHIC. A systematic study of identified hadron production was performed in Au+Au/Cu+Cu collisions at sNN=62.4/200GeV, to investigate the possible origins of this difference. In this paper, we show particle ratios, elliptic flow strengths, and their scaling properties.}     

Scaling behavior of mixed-state hall effect in MgB2 thin films

The Hall resistivity (ρ_xy) and the longitudinal resistivity (ρ_xx) in c-axis-oriented superconducting MgB₂ thin films have been investigated in extended fields up to 18 T. We have observed a scaling behavior between the Hall resistivity and the longitudinal resistivity, , where the exponent (β) is observed to be independent of the temperatures and the magnetic fields. For a wide magnetic field region from 1 to 18 T and a wide temperature region from 10 to 28 K, a universal power law with β = 2.0 ± 0.1 was observed in c-axis-oriented MgB₂ thin films. These results can be well interpreted by using recent models.     

Analysis of the resistive switching behaviors of vanadium oxide thin film

We demonstrate the polarization of resistive switching for a Cu/VOx/Cu memory cell.The switching behaviors of Cu/VOx/Cu cell are tested by using a semiconductor device analyzer(Agilent B1500A),and the relative micro-analysis of I-V characteristics of VOx/Cu is characterized by using a conductive atomic force microscope(CAFM).The I-V test results indicate that both the forming and the reversible resistive switching between low resistance state(LRS) and high resistance state(HRS) can be observed under either positive or negative sweep.The CAFM images for LRS and HRS directly exhibit evidence for the formation and rupture of filaments based on positive or negative voltage.The Cu/VOx/Cu sandwiched structure exhibits reversible resistive switching behavior and shows potential applications in the next generation of nonvolatile memory.     

高斯型非均匀应力对铁磁薄膜磁化性质的影响

采用Monte-Carlo方法研究了高斯型非均匀应力对的铁磁薄膜磁化性质的影响.结果表明: 与易轴平行的拉应力和与易轴垂直的压应力能够增大系统的矫顽场, 而与易轴平行的压应力和与易轴垂直的拉应力则会减小系统的矫顽场.在矫顽场增大(减小)的同时, 系统还伴随着剩磁及其矩形度的增大(减小).更有意义的是, 在与易轴平行的压应力或与易轴垂直的拉应力作用下, 在应力的集中区域会出现“易轴旋转”的现象. 这种产生“易轴旋转”的应力集中区域的范围强烈地依赖于应力的强度和分布宽度. 关键词： 铁磁薄膜 非均匀应力 Monte-Carlo方法 磁滞回线     

Dynamics Behaviors and Scaling in Intermittent Turbulence of a Shell Model

In this paper, the dynamics behaviors on fo-δ parameter surface is investigated for Gledzer-Ohkitani- Yamada model We indicate the type of intermittency chaos transitions is saddle node bifurcation. We plot phase diagram on fo-δ parameter surface, which is divided into periodic, quasi-periodic, and intermittent chaos areas. By means of varying Taylor-microscale Reynolds number, we calculate the extended self-similarity of velocity structure function.     

Platinum role in hydrophilicity enhancement of Cr-doped TiO2 thin films

In this paper, we have investigated the hydrophilic properties of the titania films doped with increasing chromium percentages (from 2.1 at.% till 4.0 at.%). Cr-doping induces an increase in the rutile weight %, a more compact structure, and a significant red shift of the TiO₂ absorption edge, the last property being very important in the self cleaning applications. For the chosen Cr concentrations, the films did not show promising hydrophilic properties. To improve them, we have applied a novel surface modification method, reported in literature mainly for powders, namely, surface metallisation. We have observed that, by depositing Pt islands on the film with the highest Cr content, its hydrophilic properties improve for a certain metal coverage area. The explanation was based on FT-IR and X-ray photoelectron spectroscopy analysis, performed on the UV irradiated and non-irradiated films, which gives information on the relationship between hydrophilicity and the amount of the adsorbed hydroxyl groups.     

油滴撞击油膜层内气泡的变形与破裂过程的数值模拟

旋转工作的机械零部件和机械设备的润滑系统工作过程中普遍存在着油滴和油膜的碰撞行为,这一行为易引起气泡夹带现象.气泡将对油滴撞击油膜时的运动过程和附壁油膜层的形成质量造成不可忽视的影响.基于耦合的水平集-体积分数方法,对油滴撞击含气泡油膜的行为进行数值模拟研究,考察油膜层内气泡的变形运动过程,分析气泡大小和位置等因素对撞击过程中气泡变形特征参数的影响规律,并探讨气泡破裂的动力学机制.研究表明,随着气泡直径的增大,油滴撞击含气泡油膜后气泡会依次出现自由表面破裂、稳定变形以及油膜内部破裂等现象;直径d=20μm的气泡能较稳定地存在于油膜层内,同时该值也是气泡发生自由表面破裂和油膜内部破裂的临界值.此外,气泡所在位置同样对气泡变形历程有一定影响,气泡越接近油膜表面,其变形量越大;位于油膜底层的气泡会附着在壁面上.在自由表面破裂和油膜内部破裂过程中,气泡破裂是由气-液界面不稳定引起的,表面张力对这两种现象起重要作用;而黏性剪切力对油膜内部破裂现象也有着不可忽视的影响.     

Role of plasma activation in tailoring the nanostructure of multifunctional oxides thin films

Potential of O₂ remote plasmas for improving structural, morphological and optical properties of various multifunctional oxides thin films both during plasma assisted growth as well as by post-growth treatments is discussed. In particular, an O₂ remote plasma metalorganic chemical vapor deposition (RP-MOCVD) route is presented for tailoring the structural, morphological and optical properties of Er₂O₃ and ZnO films. Furthermore, post-growth room-temperature remote O₂ plasma treatments of indium-tin-oxides (ITO) films are demonstrated to be effective in improving morphology of ITO films.     

InGaZnO薄膜晶体管背板的栅极驱动电路静电释放失效研究

本文通过解析阵列基板栅极驱动(gate driver on array, GOA)电路中发生静电释放(electro-static discharge,ESD)的InGaZnO薄膜晶体管(InGaZnO thin-film transistor, IGZO TFT)器件发现:栅极Cu金属扩散进入了SiN_x/SiO_2栅极绝缘层;源漏极金属层成膜前就发生了ESD破坏;距离ESD破坏区域越近的IGZO TFT,电流开关比越小,直到源漏极与栅极完全短路.本文综合IGZO TFT器件工艺、GOA区与显示区金属密度比、栅极金属层与绝缘层厚度非均匀性分布等因素,采用ESD器件级分析与系统级分析相结合的方法,提出栅极Cu:SiN_x/SiO_2界面缺陷以及这三层薄膜的厚度非均匀分布是导致GOA电路中沟道宽长比大的IGZO TFT发生ESD失效的关键因素,并针对性地提出了改善方案.     

兰州重离子加速器控制系统DSP组件设计

针对重离子加速器部分电源的控制要求,进行了分析研究,提出并实现了一种实时、高效、多功能的控制系统。该系统基于数字信号处理器（DSP）和两片现场可编程门阵列（FPGA）芯片相结合的核心处理构架,在系统后端利用PXI总线接口配合FPGA来与工控机箱中的系统控制器和其他控制组件进行大批量数据交互;系统前端利用直接数字频率合成器、模数转换器和数模转换器等器件结合DSP和FPGA中的控制算法及相应控制机制来实现对不同电源控制参数的处理和功率的输出;平台中两组光纤模块也与FPGA相配合实现对同步触发事例等实时数据的收发和调试。     

重离子碰撞中K介子和π介子产生的统一动力学模拟

用RVUU模型统一地研究了重离子碰撞中产生的K介子和π介子的动力学过程.考虑了K产生和输运过程的介质效应,同时,计入了π在核物质中的传播.用它模拟了每核子1GeV入射能量的重离子碰撞中π产生和阈下K产生过程.讨论了核介质效应对π末态性质的影响,以及对K末态性质的联带影响.计算结果表明,吸引的π光学势,影响了末态π动量分布,使横动量分布中具有小动量的π产额增大,同时明显增大了K的产额,改变了K的动量分布.这说明要合理地评价重离子碰撞的探测信息,需要统一地研究K和π的这些末态动力学作用.