PbTe/CdTe量子点的光学增益

PbTe/CdTe量子点是一类新型异系低维结构材料,实验发现具有强的室温中红外光致发光现象.为研究这一材料体系的发光特性,建立了理论模型,计算了PbTe/CdTe量子点的光学跃迁和增益.模型基于k·p包络波函数方法并考虑了PbTe能带结构的各向异性.分析了量子点光学增益与量子点尺寸、注入载流子浓度的关系.结果表明,当注入载流子浓度在(0.3—3)×10¹⁸cm^-3范围时,尺寸为15—20nm的量子点可以产生 关键词： PbTe/CdTe量子点 光学增益 铅盐矿半导体     

光抽运半导体激光器增益特性研究

以InGaAs/GaAs应变量子阱材料为例,介绍了考虑能带及波函数的混合效应的6×6Luttinger-Kohn哈密顿量,提出用有限差分法求解含Luttinger-Kohn哈密顿量的有效质量方程,数值模拟得到导带和价带的能带结构,计算应变量子阱的跃迁矩阵元,进而用Lorentzian线形函数计算材料增益。讨论了量子阱阱宽、注入载流子浓度、温度等因素对量子阱材料增益的影响。计算结果表明,压应变使得量子阱有效带隙增大,降低了材料增益的透明电流密度,继而降低器件的阈值,改善器件的输出特性;增益峰值波长和发射波长之间合适的偏差,会使光抽运半导体激光器的阈值电流和工作电流随温度有较小的变化。     

MBE生长PbSe/PbSrSe量子阱结构的光致中红外发光的研究

研究了分子束外延技术生长的PbSe/PbSrSe多量子阱结构的中红外光致荧光现象.高分辨率X射线衍射（HRXRD）谱观察到了多量子阱所特有的多级卫星峰,表明量子阱界面陡峭.变温光致荧光谱测量显示量子阱结构对电子空穴有强的限制效应,在相同温度下,量子阱样品的荧光峰峰位相对PbSe体材料有一定的蓝移.发现量子阱样品的荧光强度同温度有关,温度从150 K上升到230 K时,荧光强度逐渐增大,温度继续升高,荧光强度缓慢下降,但在高于室温时,仍能观察到较强的荧光发射,这说明该量子阱结构材料具有应用于室温工作的中红外 关键词： PbSe/PbSrSe多层量子阱（MQWs） 光致中红外荧光 高分辨X射线衍射（HRXRD）     

ZnO/MgZnO单量子阱的能带重正化与阱宽的关系

通过室温下的时间积分光致发光(PL)谱,研究了阱宽Lw渐变的ZnO/Mg0.1Zn0.9O单量子阱在高激发强度下的能带重正化与阱宽的关系。实验中光生载流子浓度为n=1.6×1014cm-2,在Lw从2.3 nm渐变到4.3 nm,PL谱峰位的红移量从5.9 meV变化到97.1 meV。红移量随阱宽增大而增加,但增加率却逐渐减少。当Lw2αB(αB,ZnO体材料激子玻尔半径,约为2 nm)时,红移量逐渐呈现出饱和的趋势(100 meV)。研究发现峰位的红移是由于多体效应所导致的能隙收缩以及在高的激发强度下带内填充效应的这两种机理相互竞争的结果。     

离子注入诱导的具有两个不同发射波长的混合双量子阱结构

叙述了磷离子注入方法诱导具有不同发射波长的InGaAsP双量子阱结构的混合,并通过光致发光谱和断面透射电子显微术对量子阱混合的程度进行了研究。在特定条件下快速热退火处理后,光致发光谱显示,在离子注入剂量低于7×10¹¹/cm²情况下,两个阱的谱峰能保持较好的分离,注入剂量从10¹¹ /cm²增大到10¹²/cm²的过程中,两个阱的带隙蓝移值都似乎存在一个极大值,并且在同样的条件下,上阱(发射波长为1.52 μm)的带隙蓝移值较下阱(发射波长为1.59 μm)大些。当离子注入剂量达到10¹²/cm²时,上阱的谱峰近乎消失,双阱光致发光谱出现了一个谱峰。用断面透射电子显微术对原生长样品与带隙蓝移具有极大值的退火样品进行微结构比较,结果显示,对比原生长样品,退火样品的晶格原子基本得到修复,但阱与垒间的界面显得模糊,这说明离子注入导致两阱完全混合。     

共振声子太赫兹量子级联激光器研究

本文综述了共振声子太赫兹(THz)量子级联激光器(QCL)载流子输运及其光电特性的研究结果。我们采用Monte Carlo方法模拟了不同有源区结构的共振声子THz QCL,如四阱有源区和三阱有源区结构等,优化了THz QCL的器件参数。计算表明,器件的增益依赖于注入势垒的宽度、掺杂浓度和声子抽运能级间隔等参数。单阱注入的THz QCL可以获得低的激射频率,而三阱有源区结构的THz QCL具有更高的工作温度。我们数值模拟了这两种器件结构在不同寄生电压下的电子输运、增益以及温度特性等。同时,我们实验测量了THz QCL的发射谱偏压和温度效应,计算结果与实验相吻合。研究结果表明,随着偏压增加发射谱出现了明显的频率蓝移,多模激射仅出现在大电流注入情形。与偏压的密切依赖关系不同,激射频率对温度的变化并不敏感。     

兼顾量子阱材料增益与折射率变化的研究

对比分析了量子阱材料增益谱及其折射率变化谱随阱宽、应变和载流子浓度的变化特性,在此基础上以两谱线3dB谱宽交叠区面积为度量,分析了各因素对兼顾材料增益与折射率变化的影响,并剖析了其中的物理机理。研究表明,两谱线3dB谱宽交叠区面积随阱宽的变化过程中存在一个极大值;引入压应变有利于增大交叠区面积;交叠区面积随载流子浓度单调增加的过程中存在一个转折点,在转折点之前增加迅速,在转折点之后增加放缓。基于以上影响规律,选取适当的阱宽与压应变量,在载流子浓度为3.0×10^(24) m^(-3)时,设计出的In0.583Ga0.417As/In0.817Ga0.183As0.4P0.6量子阱在C波段内可恰当地兼顾增益与折射率变化,两谱线3dB谱宽交叠区面积为3.7×10~4 nm/cm。     

P(o)schl-Teller势阱中非局域效应对透射光谱的影响

在考虑半导体量子阱中导带电子对外加激光场非局域光学响应的情况下,利用格林函数方法推导出了光透射率的解析表达式,并以典型的GaAs/AlGaAs为材料的P(o)schl-Teller量子势阱为例进行数值计算.计算结果表明,由于电子对激光场的非局域光学响应,半导体量子阱的透射光谱的谱线在共振峰附近出现明显地蓝移,蓝移的大小与量子阱宽度有紧密的联系.在有效的纳米尺度范围内,半导体量子阱越宽,透射谱线的蓝移也就越大.另外,光场强度和量子阱结构参数等因素对透射光谱的影响也被澄清.     

用深能级瞬态谱方法研究赝晶Si/Ge0.25Si0.75/Si单量子阱的价带偏移

应变的Ge_xSi_1-x层和未应变的硅层间的能带偏移主要是价带偏移。量子阱中载流子的热发射能与界面的能带偏移有着密切的关系。本文用深能级瞬态谱(DLTS)研究分子束外延生长的p型Si/Ge_0.25Si_0.75/Si单量子阱的价带偏移,阱宽为15nm,考虑到电场的影响和量子阱中第一子能级的位置,对从DLTS得到的热发射能进行适当的修正,可以计算出Si/Ge_0.25Si_0.75/S 关键词：     

GaAs/AlxGa1-xAs量子阱能级结构设计与光谱分析

通过理论计算对用于量子阱红外探测器的GaAs/AlxGa1-xAs量子阱能级结构进行模拟设计,将不同生长结构的量子阱材料的光响应谱和光致荧光谱(PL)与计算结果进行比较.说明量子阱生长结构与量子阱能级结构的关系.欲使量子阱红外探测器的响应峰值在8μm附近,则需量子阱结构中阱宽为47nm,垒中Al含量为029.理论计算与测试结果符合得较好. 关键词：     

The impact of nonequilibrium gain in a spectral laser diode model

We describe the inclusion of nonequilibrium gain into a self-consistent 2.5D CW spectral laser diode model and report on the use of this model to investigate the origin of gain compression in a 975 nm high-brightness tapered QW laser diode. Nonequilibrium gain is calculated using a dynamic gain model, which simulates the dynamic relaxation of the quantum well carrier energy distributions under the influence of steady-state electrical and optical excitation. Calculated gain and spontaneous emission spectra are included in the laser model via parameterised look up tables. Both simulated and experimentally measured intracavity spontaneous emission spectra show an increased carrier density and a blue-shift of the gain maximum with increasing bias caused by carrier heating and spectral hole burning. The accurate incorporation of nonequilibrium gain compression is therefore vital for the accurate prediction of the operating characteristics of these devices and for the experimental determination of the active region temperature.     

具有三角形InGaN/GaN多量子阱的高内量子效率的蓝光LED(英文)

对InGaN量子阱LED的内量子效率进行了优化研究。分别对发光光谱、量子阱中的载流子浓度、能带分布、静电场和内量子效应进行了理论分析。对具有不同量子阱数量的InGaN/GaN LED进行了理论数值比对研究。研究结果表明,对于传统结构的LED而言,2个量子阱的结构相对于5个和7个量子阱具有更好的光学性能。同时还研究了具有三角形量子阱结构的LED,研究结果显示,三角形多量子阱结构具有较高的电致发光强度、更高的内量子效率和更好的发光效率,所有的优点都归因于较高的电子-空穴波函数重叠率和低的Stark效应所产生的较高的载流子输入效率和复合发光效率。     

Photoluminescence characterized thermal mismatch of PbTe/CdTe single quantum wells grown on GaAs substrates

This report describes photoluminescence (PL) properties of PbTe/CdTe single quantum wells grown on (1 0 0)-oriented GaAs substrates by molecular beam epitaxy. Despite the differences in crystal structure and thermal expansion coefficient between PbTe and CdTe, an intense mid-infrared emission was observed even at higher temperatures than 300 K. Multiple peaks, however, were found in the PL spectra, and the analysis of the PL peak energy dependence on temperature revealed an important role of the thermal mismatch.     

PbTe/PbSrTe半导体非对称量子阱中的Rashba效应

窄带隙半导体异质结构的自旋效应最近受到了国际上的很大关注.Ⅳ-Ⅵ族半导体具有各向异性和多能谷的特征,因此可以预期Rashba自旋效应在不同取向的Ⅳ-Ⅵ族半导体量子阱结构中存在显著差异.计算了多个取向的Pb_1-ySr_yTe/PbTe/Pb_1-xSr_xTe非对称量子阱中的Rashba分裂能,结果表明［100］取向的PbTe量子阱的Rashba分裂能在阱宽为5.0nm时 关键词： Ⅳ-Ⅵ族半导体 非对称量子阱 Rashba效应 自旋-轨道耦合分裂     

Optimization of a GaN-based irregular multiple quantum well structure for a dichromatic white LED

GaN-based irregular multiple quantum well(IMQW) structures assembled two different types of QWs emitting complementary wavelengths for dichromatic white light-emitting diodes(LEDs) are optimized in order to obtain near white light emissions.The hole distributions and spontaneous emission spectra of the IMQW structures are analysed in detail by fully considering the effects of strain,well-coupling,valence band-mixing and polarization effect through employing a newly developed theoretical model from the k · p theory.Several structure parameters such as well material component,well width,layout of the wells and the thickness of barrier between different types of QWs are employed to analyse how these parameters together with the polarization effect influence the electronic and the optical properties of IMQW structure.Numerical results show that uniform hole distributions in different types of QWs are obtained when the number of the QWs emitting blue light is two,the number of the QWs emitting yellow light is one and the barrier between different types of QWs is 8nm in thickness.The near white light emission is realized using GaN-based IMQW structure with appropriate design parameters and injection level.     

Threshold current density in ZnS/MgBeZnS quantum well ultraviolet lasers

We calculate optical gain coefficient and threshold current density in ZnS/MgBeZnS quantum wells (QWs) because ZnS/MgBeZnS QWs are useful for the fabrication of an ultraviolet laser on zinc-blende substrates. The threshold current density in a ZnS/MgBeZnS QW laser diode (LD) with a 10 nm ZnS active layer is calculated to be 1.63 kA/cm². By comparing the measured J _th in a CdZnSe/ZnSSe/ZnMgSSe QW LD with that calculated by us, it is expected that the threshold current density in ZnS/MgBeZnS QW LDs measured by experiment is larger than that calculated by our calculation method.     

Hyperentanglement source by intersubband two-photon emission from semiconductor quantum wells

We propose an efficient hyperentanglement source emitting photon pairs entangled in both energy and polarization. The compact electrically driven room-temperature source, based on intersubband two-photon emission from semiconductor quantum wells (QWs) exhibits pair generation rates several orders of magnitude higher than alternative conventional schemes. A theoretical formalism is derived for the calculation of photon pair generation spectra and rates. The results are presented for superlattice structures similar to quantum cascade lasers of GaAs/AlGaAs QWs emitting in the mid-IR and far-IR and for InN/AlN QW structures suitable for telecommunication wavelengths.     

Temperature properties of exciton luminescence from CdTe quantum wells with different thicknesses in the CdTe/CdMnTe structure

The optical spectra of the CdTe/Cd_0.7Mn_0.3Te structure containing three CdTe quantum wells with nominal thicknesses of 16, 8, and 4 monolayers have been investigated. The temperature dependences of parameters of the exciton luminescence spectra (integrated intensity, full-width at half-maximum, position of the maximum, Stokes shift) for quantum wells with different thicknesses differ substantially. These differences are explained by a strong thickness dependence of the energy of Coulomb coupling in the exciton, the energy of localization of the exciton on bulges of the quantum well, and the degree of penetration of the exciton wave function into the barrier. At high excitation power densities, the emission contours of the quantum wells with thicknesses of 8 and 16 monolayers contain short-wavelength tails that correspond to optical transitions between excited quantum-well levels.     

Resonant Raman scattering of optical phonons in self-assembled quantum dots

We have investigated the carrier relaxation mechanism in InGaAs/GaAs quantum dots by photoluminescence excitation (PLE) spectroscopy. Near-field scanning optical microscope successfully shows that a PLE resonance at a relaxation energy of 36 meV can be seen in all single-dot luminescence spectra, and thus can be attributed to resonant Raman scattering by a GaAs LO phonon to the excitonic ground state. In addition, a number of sharp resonances observed in single-dot PLE spectra can be identified as resonant Raman features due to localized phonons, which are observed in the conventional Raman spectrum. The results reveal the mechanism for the efficient relaxation of carriers observed in self-assembled quantum dots: the carriers can relax within the continuum states, and make transitions to the excitonic ground state by phonon emission.