Einstein oscillators in thallium filled antimony skutterudites

Inelastic neutron scattering measurements on several Tl filled skutterudites (Tl0.5Co3.5Fe0.5Sb12, Tl0.8Co3FeSb12, and Tl0.8Co4Sb11Sn) all show a sharp peak in the vibrational density of states at 57+/-2 K, which is absent in the unfilled skutterudite CoSb3. Heat capacity measurements on Tl0.8Co4Sb11Sn as compared to CoSb3 are consistent with the presence of a localized vibrational mode associated with the "rattling" thallium atoms in this filled skutterudite compound. Both results are well described by a localized Einstein mode model with an Einstein temperature Theta(E) of 53+/-1 K. These data provide perhaps the clearest example of local mode behavior in a concentrated metallic system.     

Semimetal behavior of bilayer stanene

Stanene is a two-dimensional (2D) buckled honeycomb structure which has been studied recently owing to its promising electronic properties for potential electronic and spintronic applications in nanodevices. In this article we present a first-principles study of electronic properties of fluorinated bilayer stanene. The effect of tensile strain, intrinsic spin-orbit and van der Waals interactions are considered within the framework of density functional theory. The electronic band structure shows a very small overlap between valence and conduction bands at the Γ point which is a characteristic of semimetal in fluorinated bilayer stanene. A relatively high value of tensile strain is needed to open an energy band gap in the electronic band structure and the parity analysis reveals that the strained nanostructure is a trivial insulator. According to our results, despite the monolayer fluorinated stanene, the bilayer one is not an appropriate candidate for topological insulator.     

一维化学势调制的p波超导体中的拓扑量子相变

本文研究了一维公度势和非公度势调制下的p波超导量子线系统的拓扑相变.在公度势调制下,通过计算Z2拓扑不变量确定系统的相图,指出系统的拓扑相变强烈地依赖于调制参数α和相移δ.在非公度势调制下,以α=(√5-1)/2,δ=0为例,计算系统的低能激发谱、Z2拓扑不变量以及逆参与率等,发现p波配对强度△∈(0,0.33)时,系统存在拓扑非平庸超导相,拓扑平庸超导相和拓扑平庸局域相的转变.而当p波配对强度△>0.33时,系统存在拓扑非平庸超导相和拓扑平庸局域相的转变.     

Quench dynamics of edge states in 2-D topological insulator ribbons

We study the dynamics of edge states of the two dimensional BHZ Hamiltonian in a ribbon geometry following a sudden quench to the quantum critical point separating the topological insulator phase from the trivial insulator phase. The effective edge state Hamiltonian is a collection of decoupled qubit-like two-level systems which get coupled to bulk states following the quench. We notice a pronounced collapse and revival of the Lochschmidt echo for low-energy edge states illustrating the oscillation of the state between the two edges. We also observe a similar collapse and revival in the spin Hall current carried by these edge states, leading to a persistence of its time-averaged value.     

点电荷在拓扑绝缘体和导体中感应磁单极

利用电势和磁标势的第一类零阶贝塞尔函数的公式及拓扑绝缘体材料的本构关系, 推导了点电荷在电介质、 拓扑绝缘体和接地导体三个区域的感应电势及感应磁标势. 研究表明: 点电荷 在电介质、 拓扑绝缘体和接地导体中感应了像电荷和像磁单极; 感应像电荷和感应像磁单极的大小和正负除了与场源电荷、 拓扑绝缘体材料参数等因素有关外, 还与像电荷和像磁单极所处的空间位置有关.     

Topological insulators in ternary compounds with a honeycomb lattice

We investigate a new class of ternary materials such as LiAuSe and KHgSb with a honeycomb structure in Au-Se and Hg-Sb layers. We demonstrate the band inversion in these materials similar to HgTe, which is a strong precondition for existence of the topological surface states. In contrast with graphene, these materials exhibit strong spin-orbit coupling and a small direct band gap at the Γ point. Since these materials are centrosymmetric, it is straightforward to determine the parity of their wave functions, and hence their topological character. Surprisingly, the compound with strong spin-orbit coupling (KHgSb) is trivial, whereas LiAuSe is found to be a topological insulator.     

Crossover between weak antilocalization and weak localization in a magnetically doped topological insulator

We report transport studies on magnetically doped Bi(2)Se(3) topological insulator ultrathin films grown by molecular beam epitaxy. The magnetotransport behavior exhibits a systematic crossover between weak antilocalization and weak localization with the change of magnetic impurity concentration, temperature, and magnetic field. We show that the localization property is closely related to the magnetization of the sample, and the complex crossover is due to the transformation of Bi(2)Se(3) from a topological insulator to a topologically trivial dilute magnetic semiconductor driven by magnetic impurities. This work demonstrates an effective way to manipulate the quantum transport properties of the topological insulators by breaking time-reversal symmetry.     

声学蜂窝结构中的拓扑角态

高阶拓扑绝缘体是近年来发现的一类具有特殊拓扑相的新型拓扑绝缘体,目前已在光学、声学等多种经典波系统中实现.本文采用数值模拟方法研究了一种二维声学蜂窝结构,通过调节胞内和胞间耦合波导管,使体能带发生反转诱导拓扑相变,进而利用拓扑相构建出声学二阶拓扑绝缘体.蜂窝结构的拓扑性质可以用量子化的四极矩Q_ij表征,当Q_ij=0时,系统是平庸的;而当Q_ij=1/2时,系统是拓扑的.基于该蜂窝结构,分别研究了六边形和三角形结构的声学高阶态,在两种构型的蜂窝结构中均观测到了孤立的零维角态,研究结果表明只有存在钝角的六边形结构对缺陷具有鲁棒性,受拓扑保护.本文的拓扑角态丰富了高阶拓扑绝缘体的研究,同时可为紧凑声学系统中的鲁棒限制声提供一条新途径.     

Point-contact tunneling spectroscopy between a Nb tip and an ideal topological insulator Sn-doped Bi_(1.1)Sb_(0.9)Te_2S

The lightly Sn-doped Bi_(1.1)Sb_(0.9)Te_2S is a good material to investigate the pure topological surface state because the bulk bands are far away from the Fermi level. By measuring point-contact tunneling spectra on the topological insulator Bi_(1.08)Sn_(0.02)Sb_(0.9)Te_2S samples with a superconducting Nb tip, we observed the suppression of differential conductance near zero bias, instead of the enhancement due to Andreev reflection on the spectra. The fitting to the measured spectrum results in a superconducting gap of more than 4 meV, and this value is much larger than the superconducting gap of the bulk Nb. The gaped feature exists at temperatures even above the critical temperature of bulk Nb, and is visible when the magnetic field is as large as 9 T at 3 K. We argue that such behaviors may be related to the pressure induced superconductivity by the tip in the junction area, or just some novel phenomena arising from the junction between an s-wave superconductor and an ideal topological insulator.     

A new topological insulator built from quasi one‐dimensional atomic ribbons

A novel topological insulator with orthorhombic crystal structure is demonstrated. It is characterized by quasi one‐dimensional, conducting atomic chains instead of the layered, two‐dimensional sheets known from the established Bi₂(Se,Te)₃ system. The Sb‐doped Bi₂Se₃ nanowires are grown in a TiO₂‐catalyzed process by chemical vapor deposition. The binary Bi₂Se₃ is transformed from rhombohedral to orthorhombic by substituting Sb on ～38% of the Bi sites. Pure Sb₂Se₃ is a topologically trivial band insulator with an orthorhombic crystal structure at ambient conditions, and it is known to transform into a topological insulator at high pressure. Angle‐resolved photoemission spectroscopy shows a topological surface state, while Sb doping also tunes the Fermi level to reside in the bandgap. (© 2015 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim)     

Quantum criticality between topological and band insulators in 3+1 dimensions

Four-component massive and massless Dirac fermions in the presence of long range Coulomb interaction and chemical potential disorder exhibit striking fermionic quantum criticality. For an odd number of flavors of Dirac fermions, the sign of the Dirac mass distinguishes the topological and the trivial band insulator phases, and the gapless semimetallic phase corresponds to the quantum critical point that separates the two. Up to a critical strength of disorder, the semimetallic phase remains stable, and the universality class of the direct phase transition between two insulating phases is unchanged. Beyond the critical strength of disorder the semimetallic phase undergoes a phase transition into a disorder controlled diffusive metallic phase, and there is no longer a direct phase transition between the two types of insulating phases.     

The emergence of bound states in a superconducting gap at the topological insulator edge

We consider the edge of a superconducting topological insulator with the impurity in the presence of the Zeeman field. We analytically prove that in the trivial phase two Andreev bound states (ABSs) arise with energies moving from the superconducting gap edges to zero forming two Majorana-like bound states, as the impurity strength varies from 0 to ±2. When the Zeeman field is locally perturbed, ABSs arise both in the trivial and topological phases, but in the topological phase ABSs with energy near the gap edges cannot transform into Majorana bound states and vice versa.     

Bose-Einstein condensate in a honeycomb optical lattice: fingerprint of superfluidity at the Dirac point

Mean-field Bloch bands of a Bose-Einstein condensate in a honeycomb optical lattice are computed. We find that the topological structure of the Bloch bands at the Dirac point is changed completely by atomic interaction of arbitrary small strength: the Dirac point is extended into a closed curve and an intersecting tube structure arises around the original Dirac point. These tubed Bloch bands are caused by the superfluidity of the system. Furthermore, they imply the inadequacy of the tight-binding model to describe an interacting Boson system around the Dirac point and the breakdown of adiabaticity by interaction of arbitrary small strength.     

Majorana modes at the ends of superconductor vortices in doped topological insulators

Recent experiments have observed bulk superconductivity in doped topological insulators. Here we ask whether vortex Majorana zero modes, previously predicted to occur when s-wave superconductivity is induced on the surface of topological insulators, survive in these doped systems with metallic normal states. Assuming inversion symmetry, we find that they do but only below a critical doping. The critical doping is tied to a topological phase transition of the vortex line, at which it supports gapless excitations along its length. The critical point depends only on the vortex orientation and a suitably defined SU(2) Berry phase of the normal state Fermi surface. By calculating this phase for available band structures we determine that superconducting p-doped Bi(2)Te(3), among others, supports vortex end Majorana modes. Surprisingly, superconductors derived from topologically trivial band structures can support Majorana modes too.     

Topological phase transition in the trirutile-type MgBi2O6

Based on the first-principle calculations and k⋅p effective model analysis, we predicted a new topological semimetal (TSM) MgBi₂O₆. Without spin-orbit-coupling (SOC) and under the generalized-gradient-approximation (GGA), MgBi₂O₆ is a nodal-line semimetal. When the exchange-correlation energy was changed to HSE06, MgBi₂O₆ was trivial insulator in the equilibrium volume, but it became TSM under 7% hydrostatic tensile strain. MgBi₂O₆ might be an important platform to study the topological properties because of the two following advantages for measurements: (1) The nodal line, drumhead-liked surface state and Fermi Arc are very closely to the Fermi level; (2) The band structure is very “clean” (no other bulk bands except the related inverted conduction and valence bands around the Fermi level), which avoids the surface states been embedded into the bulk states.     

Band topology and the quantum spin Hall effect in bilayer graphene

We consider bilayer graphene in the presence of spin-orbit coupling, in order to assess its behavior as a topological insulator. The first Chern number n for the energy bands of single-layer graphene and that for the energy bands of bilayer graphene are computed and compared. It is shown that for a given valley and spin, n for a Bernal-stacked bilayer is doubled with respect to that for the monolayer. This implies that this form of bilayer graphene will have twice as many edge states as single-layer graphene, which we confirm with numerical calculations and analytically in the case of an armchair terminated surface. Bernal-stacked bilayer graphene is a weak topological insulator, whose surface spectrum is susceptible to gap opening under spin-mixing perturbations. We assess the stability of the associated topological bulk state of bilayer graphene under various perturbations. In contrast, we show that AA-stacked bilayer graphene is not a topological insulator unless the spin-orbit coupling is bigger than the interlayer hopping. Finally, we consider an intermediate situation in which only one of the two layers has spin-orbit coupling, and find that although individual valleys have non-trivial Chern numbers for the case of Bernal stacking, the spectrum as a whole is not gapped, so the system is not a topological insulator.     

Atomic-Ordering-Induced Quantum Phase Transition between Topological Crystalline Insulator and Z_2 Topological Insulator

Topological phase transition in a single material usually refers to transitions between a trivial band insulator and a topological Dirac phase, and the transition may also occur between different classes of topological Dirac phases.It is a fundamental challenge to realize quantum transition between Z_2 nontrivial topological insulator(TI) and topological crystalline insulator(TCI) in one material because Z_2 TI and TCI have different requirements on the number of band inversions. The Z_2 TIs must have an odd number of band inversions over all the time-reversal invariant momenta, whereas the newly discovered TCIs, as a distinct class of the topological Dirac materials protected by the underlying crystalline symmetry, owns an even number of band inversions. Taking PbSnTe_2 alloy as an example, here we demonstrate that the atomic-ordering is an effective way to tune the symmetry of the alloy so that we can electrically switch between TCI phase and Z_2 TI phase in a single material. Our results suggest that the atomic-ordering provides a new platform towards the realization of reversibly switching between different topological phases to explore novel applications.     

Two scenarios of the quantum critical point

Two different scenarios of the quantum critical point (QCP), a zero-temperature instability of the Landau state related to the divergence of the effective mass, are investigated. Flaws of the standard scenario of the QCP, where this divergence is attributed to the occurrence of some second-order phase transition, are demonstrated. Salient features of a different topological scenario of the QCP, associated with the emergence of bifurcation points in the equation ∈(p) = μ that ordinarily determines the Fermi momentum, are analyzed. The topological scenario of the QCP is applied to three-dimensional (3D) Fermi liquids with an attractive current-current interaction.     

人工带隙材料的拓扑性质

近年来,人工带隙材料(如声子晶体和光子晶体)由于其优异的性能,已成为新一代智能材料的研究焦点.另一方面,材料拓扑学由凝聚态物理领域逐渐延伸到其他粒子或准粒子系统,而研究人工带隙材料的拓扑性质更是受到人们的广泛关注,其特有的鲁棒边界态,具有缺陷免疫、背散射抑制和自旋轨道锁定的传输等特性,潜在应用前景巨大.本文简要介绍拓扑材料特有的鲁棒边界态的物理图像及其物理意义,并列举诸如光/声量子霍尔效应、量子自旋霍尔效应、Floquet拓扑绝缘体等相关工作;利用Dirac方程,从原理上分析光/声拓扑性质的由来;最后对相关领域的发展方向和应用前景进行了相应的讨论.     

Proximity effects in topological insulator heterostructures

Topological insulators （Tls） are bulk insulators that possess robust helical conducting states along their interfaces with conventional insulators. A tremendous research effort has recently been devoted to TI-based heterostructures, in which con- ventional proximity effects give rise to a series of exotic physical phenomena. This paper reviews our recent studies on the potential existence of topological proximity effects at the interface between a topological insulator and a normal insu- lator or other topologically trivial systems. Using first-principles approaches, we have realized the tunability of the vertical location of the topological helical state via intriguing dual-proximity effects. To further elucidate the control parameters of this effect, we have used the graphene-based heterostructures as prototypical systems to reveal a more complete phase diagram. On the application side of the topological helical states, we have presented a catalysis example, where the topo- logical helical state plays an essential role in facilitating surface reactions by serving as an effective electron bath, These discoveries lay the foundation for accurate manipulation of the real space properties of the topological helical state in TI- based heterostructures and pave the way for realization of the salient functionality of topological insulators in future device applications.