Charge and Heat Transport in Polycrystalline Metallic Nanostructures

Metals are typically good conductors in which the abilities to transport charge and to transport heat can be related through the Wiedemann-Franz law. Here we report on an abnormal charge and heat transport in polycrystalline metallic nanostructures in which the ability to transport charge is weakened more obviously than that to transport heat. We attribute it to the influence of the internal grain boundaries and have formulated a novel relation to predict the thermal conductivity. The Wiedemann-Franz law is then modified to account for the influence of the grain boundaries on the charge and heat transport with the predictions now agreeing well with the measured results.     

Modeling of reactive kinetics in the metal surface contaminant cleaning using atmospheric pressure plasma arc

Atmospheric pressure plasma arc (APPA) cleaning is a newly developed method of metal surface cleaning. In this paper, a mathematical model of reactive kinetics in the metal surface contaminant cleaning using APPA has been developed. Based on the analysis of APPA cleaning mechanism and the feature of cleaning interface, a governing equation was established with heat transfer equation and energy conservation on the moving interface. Using fourth-order Rounge-Kutta method, above equation was solved and removal percentages of the cleaning contaminant at different time were obtained. In virtue of reactive kinetics theory, a reactive kinetics model of metal surface cleaning using APPA was established on the base of above calculation results. Afterwards, reactive kinetics parameters such as activation energy and pre-exponential factor were calculated. Cleaning lubricant was taken as an example, the results indicated that predictive values of lubricant removal percentages gotten from this established reactive kinetics model show good consistent with experimental data at the same time. Furthermore, the ambient temperature on the cleaning lubricant surface affects the removal rate strongly. The removal rate increases with the increase of the ambient temperature. To avoid the damage of metal substrate surface because of higher temperature and ensure the removal rate of the lubricant, the appropriate temperature which lies between the lubricant decomposition temperature and damage temperature of metal substrate under given calculation conditions should be determined.     

Bio-inspired dual surface modification to improve tribological properties at small-scale

In miniaturized devices like micro/nano-electro-mechanical systems (MEMS/NEMS), the critical forces, namely adhesion and friction restrict the smooth operation of the elements that are in relative motion. MEMS/NEMS are traditionally made of silicon, whose tribological properties are not good. In this paper, we present an investigation on the approach of dual surface modification of silicon surfaces and their tribological properties at micro-scale. The dual surface modification is a combination of topographical and chemical modifications. As the topographical modification, micro-patterns with varying shapes of pillars and channels were fabricated on Si(1 0 0) wafer surfaces using photolithography method. Chemical modification included the coating of micro-patterns with diamond-like carbon (DLC) and Z-DOL (perfluoropolyether, PFPE) thin films. The surfaces with combined modification were evaluated for their micro-friction behavior in comparison with those of bare Si(1 0 0) flat surfaces and the topographically/chemically modified silicon surfaces. Results showed that the surfaces with dual modification exhibited superior tribological properties. These results indicate that a combination of topographical and chemical modification is very effective in enhancing tribological properties at small-scale. The combined surface treatments such as the ones investigated in the current work could be useful for tribological applications in small-scale devices such as MEMS/NEMS. The motivation for undertaking the dual modification approach comes from an earlier observation made on the significant influence of the surface characteristics of lotus leaf on its micro-friction behavior.     

Etching of mercuric iodide in cation iodide solutions

The surface properties of mercuric iodide after etching in various cation iodide solutions have been investigated in terms of dissolution rate, morphology, electrical properties and reaction with water vapour. No significant differences have been observed in the etching rates. However, dissolution of HgI₂ in NH₄I, NaI, KI or RbI leaves the surface more or less covered with a residual iodo mercurate compound whose electrical properties and stability with regard to humidity may noticeably influence the behaviour of mercuric iodide devices. The smallest effect has been observed for etching in NaI.     

F2-laser ablation patterning of dielectric layers

Spatially defined patterning of multi-layer dielectric optical systems by laser-induced ablation is demonstrated. A 49-layer high-reflectivity mirror for 193-nm light was irradiated with F₂-laser light through the CaF₂-substrate to cleanly remove the whole dielectric stack by rear-sided ablation. The 157-nm light is absorbed efficiently by dielectric layers such as SiO₂ and Al₂O₃ that are typically used for ultraviolet (UV) transmission at 193-nm and longer wavelengths. Thus it is possible to ablate highly reflective UV-laser mirrors (HR 193 nm) and to create dielectric masks that withstand high power levels at 193 nm. A single 157-nm pulse with a fluence of less than 500 mJ/cm² is sufficient to cleanly ablate the whole layer stack with sharp edges and without debris deposition. Received: 31 October 2000 / Accepted: 14 November 2000 / Published online: 10 January 2001     

Pulsed laser deposition and in situ diagnostics of the process applied to shape-memory alloys

NiTi films deposited by pulsed laser ablation on Si/SiO₂ are shown to exhibit structural and functional properties related to the shape-memory effect. Film characterization suggests that relevant temperatures for the solid-to-solid transformation responsible for the shape memory are in substantial agreement with those of the bulk target material, demonstrating a good congruency of the deposition process. Besides the technological interest for this class of thin films, our findings point out the suitability of laser ablation for metal alloy deposition. An investigation based on in situ ion-mass spectroscopy and covariance mapping analysis allows us to determine the main vapor-phase processes leading to the formation of stoichiometric clusters expected to play a relevant role in assisting the growth of NiTi thin films. Received: 6 August 2001 / Accepted: 11 April 2002 / Published online: 4 November 2002 RID="*" ID="*"Corresponding author. Fax: +39-50/2214-333, E-mail: fuso@df.unipi.it     

Downwards to metrology in nanoscale: determination of the AFM tip shape with well-known sharp-edged calibration structures

More and more AFMs and AFM profilers will be used to quantify micro- and nanostructures. For a correct characterization and evaluation of the measured structural details, in the nanoscale range, knowledge of the current shape of the AFM tip is needed. Often, the interaction between the AFM tip and the sample leads to a change in the tip shape. Our concept for the determination of tip shapes is based on the measurement of a well-known sharp-edged silicon structure. Each calibration sample contains a selected structure serving as a calibrated width standard, and has a certified pitch. Consequently, the shape of AFM tips can be determined with an accuracy of 10 nm. Received: 2 September 2002 / Accepted: 2 September 2002 / Published online: 5 March 2003 RID="*" ID="*"Corresponding author. Fax: +49-3641/206-199, E-mail: huebner@ipht-jena.de     

Thermal and carrier transport originating from photon recycling and non-radiative recombination in laser micromachining of GaAs thin films

Coupled thermal and carrier transports (electron/hole generation, recombination, diffusion and drifting) in laser photoetching of GaAs thin film is investigated. A new volumetric heating mechanism originating from SRH (Shockley–Read–Hall) non-radiative recombination and photon recycling is proposed and modeled based on recent experimental findings. Both volumetric SRH heating and Joule heating are found to be important in the carrier transport, as well as the etching process. SRH heating and Joule heating are primarily confined within the space-charge region, which is about 20 nm from the GaAs surface. The surface temperature rises rapidly as the laser intensity exceeds 10⁵ W/m². Below a laser intensity of 10⁵ W/m², the thermal effect is negligible. The etch rate is found to be dependent on the competition between photovoltaic and photothermal effects on surface potential. At high laser intensity, the etch rate is increased by more than 100%, due to SRH and Joule heating. Received: 24 January 2002 / Accepted: 11 April 2002 / Published online: 10 September 2002 RID="*" ID="*"Corresponding author. Fax: +1-310/206-2302, E-mail: xiang@seas.ucla.edu     

Calculation of the temperature and thermal expansion of a STM tip heated by a short laser pulse

A mathematical model for the calculation of the temperature field in a scanning tunneling microscope (STM) tip under laser illumination is developed. The duration of the laser pulse is a few nanoseconds or shorter. A Gaussian distribution of the laser light intensity in time and space is assumed. Two different mechanisms of tip heating are taken into account: 1. due to an enhanced electric field on the tip; 2. due to heating of the side surface of the tip by the focused spot of laser light. An average tip temperature is calculated using the heat conductivity equation. The enhanced electric field on the tip is calculated by the method of boundary integral equations. Received: 20 August 2002 / Revised version: 4 December 2002 / Published online: 19 March 2003 RID="*" ID="*"Corresponding author. Fax: +49-2551/962-490, E-mail: sklein@fh-muenster.de     

Depth profiling the thermal reflection coefficient of an opaque solid via an inverse thermal wave scattering theory based on the Method of Images

A new formulation of the inverse problem of depth profiling the thermal properties of an opaque solid based on one-dimensional photo-generated thermal waves is presented. The inverse problem as posed is linear in a set of lumped thermal reflection coefficients which account for the return of energy to the surface by all significant heat conduction channels. An analysis based on the Method of Images relates these coefficients to individual values of the interface thermal reflection coefficients in the material. No weak backscattering assumption is invoked to linearize the problem. The method yields a unique solution subject to a given condition of regularization. Solutions recovered by the method are stable at experimentally feasible error levels. Received: 27 September 1999 / Published online: 16 June 2000     

Effect of diffusion layers and defect layer on acoustic phonons transport through the structure consisting of different films

By using the continuum elastic approximation model and the transfer matrix method, we investigate the effect of diffusion layers and defect layer on acoustic phonons transport through the structure consisting of different films. Our work show that most acoustic phonons can easily pass the structure, but some only have much less transmission probabilities and form corresponding dips in the transmission spectrum. With the change of the structure parameters such as the width of diffusion layers and defect layer, the number of unit cell and the density of containing Al in diffusion layers and defect layer, the magnitude of the frequencies of acoustic phonons corresponding to the dips almost remain unchanged, but the transmission coefficients corresponding to the dips change at different degree, and the transmission probabilities of some frequencies are very sensitive to the variation of the above-mentioned structure parameters. These results can provide some references in controlling the transmission coefficients of acoustic phonons, devising parts of acoustic apparatus and theoretical investigation related.     

Near field induced defects and influence of the liquid layer thickness in Steam Laser Cleaning of silicon wafers

The removal of particles from commercial silicon wafers by Steam Laser Cleaning was examined. Polystyrene colloids were used as model contaminants due to their well defined size and shape. In contrast to previous studies, where the experimental conditions on the surface were only roughly determined, special care was taken to control the amount of liquid applied to the surface. We report measurements of the cleaning threshold for different particle sizes. The comparability of the results was ensured by the reproducible conditions on the surface. Moreover, we studied the influence of different liquid film thicknesses on the cleaning process. Investigations of laser induced liquid evaporation showed that the cleaning threshold coincides with the fluence necessary for the onset of explosive vaporization. After particle removal, the surface was examined with an atomic force microscope. These investigations demonstrated that near field enhancement may cause defects on the nm-scale, but also showed that Steam Laser Cleaning possesses the capability of achieving damage-free removal for a large range of different particle sizes. Received: 14 January 2003 / Accepted: 16 January 2003 / Published online: 28 March 2003 RID="*" ID="*"Corresponding author. Fax: +49-7531/88-3127, E-mail: florian.lang@uni-konstanz.de     

Oxygen and hydrogen accumulation at buried implantation-damage layers in hydrogen- and helium-implanted Czochralski silicon

Oxygen and hydrogen accumulations at buried implantation-damage layers were studied after post-implant-ation annealing of hydrogen- and helium-implanted Czochralski (Cz) silicon. Hydrogen implantation was carried out at energies E=180 keV and doses D=2.7×10¹⁶ cm^-2, and helium implantation at E=300 keV and D=10¹⁶ cm^-2. For comparison hydrogen implantation was also done into float-zone (Fz) silicon wafers. Post-implantation annealing at 1000 °C was done either in H₂ or N₂ atmosphere. Hydrogen and oxygen concentration profiles were measured by secondary ion mass spectroscopy (SIMS). It is shown that the ambient during annealing plays a significant role for the gettering of oxygen at buried implantation-damage layers in Cz Si. For both hydrogen and helium implantations, the buried defect layers act as rather effective getter centers for oxygen and hydrogen at appropriate conditions. The more efficient gettering of oxygen during post-implantation annealing in a hydrogen ambient can be attributed to a hydrogen-enhanced diffusion of oxygen towards the buried implantation-damage layers, where a fast oxygen accumulation occurs. Oxygen concentrations well above 10¹⁹ cm^-3 can be obtained. From the comparison of measurements on hydrogen-implanted Cz Si and Fz Si one can conclude that at the buried defect layers hydrogen is most probably trapped by voids and/or may be stable as immobile molecular hydrogen species. Therefore hydrogen accumulated at the defect layers, and is preserved even after high-temperature annealing at 1000 °C. Received: 3 July 2000 / Accepted: 11 July 2000 / Published online: 22 November 2000     

KrF excimer laser dry and steam cleaning of silicon surfaces with metallic particulate contaminants

KrF excimer laser-assisted dry and steam cleaning of single-crystal silicon wafers contaminated with three different types of metallic particles was studied. The laser fluence used was 0.3 J/cm². In the dry process, for samples cleaned with 100 laser pulses the cleaning efficiency was 91, 71 and 59% for Au, Cu and W particles, respectively, whilst in steam cleaning the efficiency is about 100% after 5 laser pulses, independently of the type of contaminant. The effects of laser irradiation on the Si surface are investigated by scanning electron microscopy (SEM), X-ray photoelectron spectroscopy (XPS) and atomic force microscopy (AFM). Laser processing at 0.3 J/cm² does not deteriorate the Si-wafer surface, either in dry or steam cleaning. However, the measured XPS intensity coming from the metallic component is greater on the cleaned surfaces than in the initial condition. Quantification of the XPS results, assuming a stratified overlayer model for the detected species and accounting for the presence of the metallic particles on the surface, showed that the obtained results can be explained by the formation of a fractional metallic monolayer on the cleaned surfaces, due to partial vaporisation of small particles initially present on the sample surface. This contamination of the substrate could be considered excessive for some applications and it shows that the process requires careful optimisation for the required efficiency to be achieved without degradation of the substrate. Received: 14 January 2001 / Accepted: 19 February 2001 / Published online: 20 June 2001     

Fragmentation of dodecanethiol molecules: application to self-assembled monolayer damage in atom lithography

Atom lithography commonly employs self-assem- bled monolayers (SAMs) of alkanethiols which act as resists to protect prepared surfaces. Metastable atomic species such as helium are used to damage the resist, enabling pattern transfer via mask lithography, followed by wet chemical etching. The damage mechanism is, however, not well understood. Here we report studies of fragmentation of dodecanethiol (DDT) molecules embedded in helium nano-droplets that have been irradiated by an electron beam. The results of the charge-transfer fragmentation process provide the first experimental data on the damage mechanisms that occur in the metastable helium/SAM interaction. Received: 20 September 1999 / Revised version: 6 December 1999 / Published online: 8 March 2000     

An optodynamic method for the real-time determination of the depth of a laser-drilled hole

An experimental method for determining the real-time depth of laser-drilled holes is presented. The proposed method involves detecting the laser-induced optoacoustic waves generated during the interaction of the laser beam with the material. Our optodynamic study involved measuring the propagation times of these waves as they traveled through the material and analyzing their temporal behavior during the drilling process. The experimental observations revealed an exponential relationship between the propagation time of the longitudinal stress wave and the number of consecutive laser pulses. Received: 25 October 2001 / Accepted: 27 October 2001 / Published online: 20 December 2001     

Three-dimensional structuring of sapphire by sequential He+ ion-beam implantation and wet chemical etching

We present a method for the selective two- and three-dimensional patterning of sapphire using light ion-beam implantation to generate severe lattice damage to depths exceeding 1 μm and subsequent selective wet chemical etching of the damaged regions by hot H₃PO₄. C-cut sapphire crystals were implanted through contact masks using ion fluences of 1×10¹⁶ to 5×10¹⁷ He⁺/cm² and energies up to 400 keV. The etching process is characterized by a high selectivity and a rate of approximately 19 nm/min. Whereas an implantation that produces a continuously damaged pathway results in complete etching from the surface, sole in-depth implantation using only high-energy ions leads to under-etching of the crystalline surface layer. By a combination of these processes we have fabricated three-dimensional structures such as channels and bridges in sapphire. Received: 14 October 2002 / Accepted: 15 October 2002 / Published online: 26 February 2003 RID="*" ID="*"Corresponding author. Fax +41-21/693-3701, E-mail: aurelian.crunteanustanescu@epfl.ch     

Laser removal of copper particles from silicon wafers using UV, visible and IR radiation

Laser removal of small copper particles from silicon wafer surfaces was carried out using Nd:YAG laser radiation from near-infrared (1064 nm) through visible (532 nm) to ultraviolet (266 nm). It has been found that both 266 nm and 532 nm are successful in removing the particles from the surface whereas 1064 nm was shown to be ineffective in the removal of particles. The damage-threshold laser fluence at 266 nm was much higher than other wavelengths which provides a much wider regime for safe cleaning of the surface without causing any substrate damage. The cleaning efficiency was increased with a shorter wavelength. The effect of laser wavelength in the removal process is discussed by considering the adhesion force of the particle on the surface and the laser-induced cleaning forces for the three wavelengths. Received: 31 May 2000 / Accepted: 14 July 2000 / Published online: 20 June 2001     

Laser ablation and micropatterning of thin TiN coatings

Laser ablation of thin TiN films deposited on steel substrates has been studied under wide-range variation of irradiation conditions (pulsewidth, wavelength, energy density and spot size). It has been demonstrated that both picosecond (150–300 ps) and nanosecond (5–9 ns) laser pulses were suitable for controllable ablation and microstructuring of a 1-μm-thick TiN film unlike longer 150-ns pulses. The ablation rate was found to be practically independent of the wavelength (270–1078 nm) and pulsewidth (150 ps–9 ns), but it increased substantially when the size of a laser spot was reduced from 15–60 μm to 3 μm. The laser ablation technique was applied to produce microstructures in the thin TiN films consisting of microcraters with a typical size of 3–5 μm in diameter and depth less than 1 μm. Tests of lubricated sliding of the laser-structured TiN films against a steel ball showed that the durability of lubricated sliding increased by 25% as compared to that of the original TiN film. Received: 28 July 1999 / Accepted: 17 April 2000 / Published online: 20 September 2000     

Influence of laser fluence and irradiation timing of F2 laser on ablation properties of fused silica in F2-KrF excimer laser multi-wavelength excitation process

A collinear irradiation system of F₂ and KrF excimer lasers for high-quality and high-efficiency ablation of hard materials by the F₂ and KrF excimer lasers’ multi-wavelength excitation process has been developed. This system achieves well-defined micropatterning of fused silica with little thermal influence and little debris deposition. In addition, the dependence of ablation rate on various conditions such as laser fluence, irradiation timing of each laser beam, and pulse number is examined to investigate the role of the F₂ laser in this process. The multi-wavelength excitation effect is strongly affected by the irradiation timing, and an extremely high ablation rate of over 30 nm/pulse is obtained between -10 ns and 10 ns of the delay time of F₂ laser irradiation. The KrF excimer laser ablation threshold decreases and its effective absorption coefficient increases with increasing F₂ laser fluence. Moreover, the ablation rate shows a linear increase with the logarithm of KrF excimer laser fluence when the F₂ laser is simultaneously irradiated, while single KrF excimer laser ablation shows a nonlinear increase. The ablation mechanism is discussed based on these results. Received: 16 July 2001 / Accepted: 27 July 2001 / Published online: 2 October 2001