白宝石衬底上生长的MgxZn1-xO晶体薄膜的结构和光学性能

在白宝石（sapphire）衬底上低温外延生长出了Mg_xZn_1-xO晶体薄膜.x射线衍射（XRD）及能量色散x射线（EDX）分析表明，Mg_xZn_1-xO薄膜的晶体结构依赖于薄膜中Mg的组分x，随着Mg组分的增大，Mg_xZn_1-xO薄膜的结构从与ZnO晶体一致的六方结构转变为与MgO晶体一致的立方结构.对Mg_xZn_1-xO薄膜的紫外透 关键词： 电子束蒸发反应 xZn_1-xO晶体薄膜')" href="#">Mg_xZn_1-xO晶体薄膜 结构和光学性能     

AlxGa1-xN/GaN异质结构中Al组分对二维电子气性质的影响

通过用数值计算方法自洽求解薛定谔方程和泊松方程，研究了Al组分对Al_xGa1-xN/GaN异质结构二维电子气性质的影响，给出了Al_xGa_{1-x< /sub>N/GaN异质结构二维电子气分布和面密度，导带能带偏移以及子带中电子分布随AlxGa 1-xN势垒层中Al组分的变化关系，并用AlxGa1-xN/GaN 异质结构自发极化与压电极化机理和能 关键词： x}Ga_1-xN/GaN异质结构')" href="#">Al_xGa_1-xN/GaN异质结构 二维电子气 自发极化 压电极化     

Pressure influence on the Stark effect of impurity states in a strained wurtzite GaN/AlxGa1-xN heterojunction

A variational method is adopted to investigate the properties of shallow impurity states near the interface in a free strained wurtzite GaN/AlxGa1-xN heterojunction under hydrostatic pressure and external electric field by using a simplified coherent potential approximation. Considering the biaxial strain due to lattice mismatch or epitaxial growth and the uniaxial strains effects, we investigated the Stark energy shift led by an external electric field for impurity states as functions of pressure as well as the impurity position, Al component and areal electron density. The numerical result shows that the binding energy near linearly increases with pressure from 0 to 10 GPa. It is also found that the binding energy as a function of the electric field perpendicular to the interface shows an un-linear red shift or a blue shift for different impurity positions. The effect of increasing x on blue shift is more significant than that on the red shift for the impurity in the channel near the interface. The pressure influence on the Stark shift is more obvious with increase of electric field and the distance between an impurity and the interface. The increase of pressure decreases the blue shift but increases the red shift.     

Structural and optical properties of an InxGa1−xN/GaN nanostructure

The structural and optical properties of an In_xGa_1−xN/GaN multi-quantum well (MQW) were investigated by using X-ray diffraction (XRD), atomic force microscopy (AFM), spectroscopic ellipsometry (SE) and photoluminescence (PL). The MQW structure was grown on c-plane (0 0 0 1)-faced sapphire substrates in a low pressure metalorganic chemical vapor deposition (MOCVD) reactor. The room temperature photoluminescence spectrum exhibited a blue emission at 2.84 eV and a much weaker and broader yellow emission band with a maximum at about 2.30 eV. In addition, the optical gaps and the In concentration of the structure were estimated by direct interpretation of the pseudo-dielectric function spectrum. It was found that the crystal quality of the InGaN epilayer is strongly related with the Si doped GaN layer grown at a high temperature of 1090 °C. The experimental results show that the growth MQW on the high-temperature (HT) GaN buffer layer on the GaN nucleation layer (NL) can be designated as a method that provides a high performance InGaN blue light-emitting diode (LED) structure.     

用肖特基电容电压特性数值模拟法确定调制掺杂AlxGa1-xN/GaN异质结中的极化电荷

研究发展了用肖特基电容电压特性数值模拟确定调制掺杂Al_xGa_1-xN/GaN异质结中极化电荷的方法.在调制掺杂的Al_0.22Ga_0.78N/GaN异质结上制备了Pt肖特基接触,并对其进行了C-V测量.采用三维费米模型对调制掺杂的Al_0.22Ga_0.78N/GaN异质结上肖特基接触的C-V特性进行了数值模拟,分析了改变样品参数对C-V特性的影响.利用改变极化电荷、n-AlGaN 关键词： xGa_1-xN/GaN异质结')" href="#">Al_xGa_1-xN/GaN异质结 极化电荷 电容电压特性 数值模拟     

Observation of positive and small electron affinity of Si-doped AlN films grown by metalorganic chemical vapor deposition on n-type 6H–SiC

We have investigated the electron affinity of Si-doped AlN films(N_(Si)= 1.0 × 10~(18)–1.0 × 10_(19)cm~(-3)) with thicknesses of 50, 200, and 400 nm, synthesized by metalorganic chemical vapor deposition(MOCVD) under low pressure on the ntype(001)6H–SiC substrates. The positive and small electron affinity of AlN films was observed through the ultraviolet photoelectron spectroscopy(UPS) analysis, where an increase in electron affinity appears with the thickness of AlN films increasing, i.e., 0.36 eV for the 50-nm-thick one, 0.58 eV for the 200-nm-thick one, and 0.97 e V for the 400-nm-thick one.Accompanying the x-ray photoelectron spectroscopy(XPS) analysis on the surface contaminations, it suggests that the difference of electron affinity between our three samples may result from the discrepancy of surface impurity contaminations.     

射频磁控溅射法生长MgxZn1-xO薄膜的结构和光学特性

用射频磁控溅射法在80℃的衬底温度下制备出Mg_xZn_1-xO(0≤x ≤030)薄膜.x射线 衍射(XRD)结果表明，Mg_xZn_1-xO薄膜为单相六角纤锌矿结构， 没有形成任何显著 的MgO分离相，Mg_xZn_1-xO薄膜的择优取向平行于与衬底垂直的 c轴；c轴晶格常数随着Mg含量的增加逐渐减小.在Mg_xZn_1-xO薄膜的光透射谱中出现 锐利的吸收边，由透 射谱估算出Mg_xZn_1-xO薄膜的带隙宽度由332eV(x=0)线性地 增加到396eV(x=030). 关键词： xZn_1-xO薄膜')" href="#">Mg_xZn_1-xO薄膜 射频磁控溅射 Mg含量     

用脉冲激光方法在Si(100)上沉积的Cox-C1-x颗粒膜及其磁电阻效 应

利用脉冲激光沉积方法在Si(100)上制备了Co_x-C_1-x颗粒膜，并研 究了其正磁电阻 效应.实验结果表明，样品在室温下的正磁电阻效应要远远高于低温下的正磁电阻效应；Co _0.02-C_0.98样品具有最大的室温正磁电阻效应，在外加磁场B=1T时 ，其磁电阻 率MR=22%；随着Co含量的增加，Co_x-C_1-x颗粒膜的正磁电阻效应呈 减小趋势.样品 的MR-B的曲线与传统的多 关键词： 正磁电阻效应 x-C_1-x颗粒膜')" href="#">Co_x-C_1-x颗粒膜 脉冲激光沉积     

Effect of high-temperature annealing on AIN thin film grown by metalorganic chemical vapor deposition

The effect of high-temperature annealing on A1N thin film grown by metalorganic chemical vapor deposition was investigated using atomic force microscopy, Raman spectroscopy, and deep ultra-violet photoluminescence （PL） with the excitation wavelength as short as ~ 177 nm. Annealing experiments were carded out in either N2 or vacuum atmosphere with the annealing temperature ranging from 1200 ℃ to 1600 ℃. It is found that surface roughness reduced and compres- sive strain increased with the annealing temperature increasing in both annealing atmospheres. As to optical properties, a band-edge emission peak at 6.036 eV and a very broad emission band peaking at about 4.7 eV were observed in the photoluminescence spectrum of the as-grown sample. After annealing, the intensity of the band-edge emission peak varied with the annealing temperature and atmosphere. It is also found that a much stronger emission band ranging from 2.5 eV to 4.2 eV is superimposed on the original spectra by annealing in either N2 or vacuum atmosphere. We attribute these deep-level emission peaks to the VAL--ON complex in the A1N material.     

Structural properties of Bi1-xLaxFeO3 studied by micro-Raman scattering

This paper reports that La-doped BiFeO 3(Bi1-x La x FeO3,x = 0,0.1,0.2,0.3,0.6,0.8 and 1.0) were studied by using micro-Raman spectroscopy and x-ray diffraction(XRD).The XRD patterns indicate that the structure of Bi1-xLaxFeO 3 changes from rhombohedral BiFeO3 to orthorhombic LaFeO3.The results of Raman spectroscopy show good agreement with the XRD results.Strikingly,the phonon peak at around 610 cm-1 and the two-phonon peaks in the high frequency range exist in all compounds and enhance with increasing La substitution.The increasing intensity of the 610 cm-1 peak is attributed to the changes in the FeO 6 octahedron during the rhombohedral-orthorhombic phase transition.The enhancements of the two-phonon peaks are associated with the breakdown of the cycloid spin configuration with the appearance of the orthorhombic structure.These results indicate the existence of strong spin-phonon coupling in Bi1-xLax FeO3,which may provide useful information for understanding the effects of La content on the structural and magnetic properties of Bi1-xLaxFeO3.     

高In组分InxGa1－xN/GaN多量子阱材料电致荧光谱的研究

研究了高In组分In_xGa_1-xN/GaN（x≈30%）多量子阱（MQWs）结构 发光二极管样品在不同注入电流下的电致荧光（EL）谱及反常的双峰现象.结果表明：有源区 内建电场在外界电流注入条件下逐渐受屏蔽，这一效应在高In组分In_xGa_{1 -x}N/GaN MQWs材料的发光复合机理中占有重要地位. 关键词： xGa_1-xN/GaN多量子阱')" href="#">In_xGa_1-xN/GaN多量子阱 电致荧光谱 内建电场     

GaN1-xPx薄膜的结构特性研究

用金属有机物化学气相沉积技术在蓝宝石衬底上外延了高P组分的GaN_1-xP _x 薄膜.利用x射线衍射仪和拉曼光谱仪研究了P对GaN_1-xP_x晶体结构 的影响.研究结果表明：随着P组分比的增加，GaN_1-xP_x（0002）衍射 峰逐渐向小角度移动，即晶格常数变大；与非掺杂GaN相比，GaN_1-xP_x薄 膜的拉曼光谱中出现了4个新的振动模 关键词： 1-xP_x')" href="#">GaN_1-xP_x 金属有机物化学气相沉积 x射线衍射 拉曼光谱     

Structure, electrical and optical properties of TiNx films by atmospheric pressure chemical vapor deposition

Titanium nitride (TiN_x) films with various nitride compositions (x) were prepared on glass substrates by atmospheric pressure chemical vapor deposition using TiCl₄ and NH₃ as precursors. The structural, compositional, electrical and optical properties of the films were studied and the results were discussed with respect to nitride composition. The results showed a linear relationship between the lattice constant and the nitride composition. Resistivity of the films was minimized near x = 1. All the TiN_x films exhibited a transmission band with a peak value of about 15% in the visible region (400-700 nm). As the wavelength increased to transition point (λ_T-R), the reflectance of the obtained films presented a sharp increase and then reached a high value of about 50% near 2000 nm. Moreover, the red-shift of transmission band and the transition wavelength (λ_T-R) with increasing the nitride composition were also discussed.     

The optical properties of MgxZnl-xO thin films

Mg_xZn_1-xO thin films have been prepared on silicon substrates by radio frequency magnetron sputtering at 60℃. The thin films have hexagonal wurtzite single-phase structure and a preferred orientation with the c-axis perpendicular to the substrates. The refractive indices of Mg_xZn_1-xO films are studied at room temperature by spectroscopic ellipsometry over the wavelength range of 400--760\,nm at the incident angle of 70℃. Both absorption coefficients and optical band gaps of Mg_xZn_1-xO films are determined by the transmittance spectra. While Mg content is increasing, the absorption edges of Mg_xZn_1-xO films shift to higher energies and band gaps linearly increase from 3.24.eV at x=0 to 3.90\,eV at x=0.30. These results provide important information for the design and modelling of ZnO/ Mg_xZn_1-xO heterostructure optoelectronic devices.     

First-principles study of structrural and corrected band properties of wurtzite Zn1-xCdxO and Zn1-xMgxO systems

A first-principles method based on density functional theory(DFT),a generalized gradient approximation(GGA),and a projector-augmented wave(PAW) are used to study the structual and band properties of wurtzite Zn1-xCdxO and Zn1-xMgxO(0 ≤x≤1) ternary alloys.By taking into account all of the possible structures,the band gaps of Zn1-xCdxO and Zn1-xMgxO alloys are corrected and compared with experimental data.     

线性微波化学气相沉积制备SiNx薄膜的微结构及光学性能研究

利用自主研发的线性微波化学气相沉积系统在不同微波功率、微波占空比、基片温度、特气比例条件下制备了SiN_x薄膜. 通过扫描电子显微镜、椭圆偏振仪等表征测量技术, 研究了不同工艺参数对SiN_x薄膜表面形貌、元素配比、折射率、沉积速度的影响, 并探讨了薄膜元素配比、折射率、沉积速度间的关系. 结果表明: 利用线性微波沉积技术, 不同工艺参数下制备的SiN_x薄膜组成元素分布均匀, 同时具有平整的表面状态; 特气比例和微波占空比是影响薄膜折射率的最主要因素, 薄膜折射率在1.92–2.33之间连续可调; 微波功率、微波占空比、沉积温度、特气比例都对SiN_x 薄膜沉积速度影响较大, 制备的SiN_x薄膜最大沉积速度为135 nm·min^-1.     

Structural and local electrical properties of AlInN/AlN/GaN heterostructures

GaN layers and Al_1−xIn_xN/AlN/GaN heterostructures have been studied by scanning probe microscopy methods. Threading dislocations (TDs), originating from the GaN (0 0 0 1) layer grown on sapphire, have been investigated. Using Current-Atomic Force Microscopy (C-AFM) TDs have been found to be highly conductive in both GaN and AlInN, while using semi-contact AFM (phase-imaging mode) indium segregation has been traced at TDs in AlInN/AlN/GaN heterostructures. It has been assessed that In segregation is responsible for high conductivity at dislocations in the examined heterostructures.     

AlxGa1-xN/GaN双量子阱的结构和掺杂浓度对子带间跃迁波长和吸收系数的影响

用薛定谔方程和泊松方程自洽计算的方法研究了Al_0.75Ga_0.25N/GaN对称双量子阱(DQWs)中子带间跃迁(ISBT)的波长和吸收系数对中间耦合势垒高度、中间耦合势垒宽度、势阱宽度和势垒掺杂浓度的依赖关系.研究发现,第一奇序子带S_1ood与第二偶序子带S_2even ISBT波长随着中间耦合势垒高度的降低而变短.当中间耦合势垒高度高于0.62 eV时,S_{1odd< 关键词： 自洽 x}Ga_1-xN/GaN双量子阱')" href="#">Al_xGa_1-xN/GaN双量子阱 子带间跃迁     

Theoretical research on optical properties and quantum efficiency of Ga1−xAlxN photocathodes

In order to design the optimal component structure of transmission-mode (t-mode) Ga_1−xAl_xN photocathode, the optical properties and quantum efficiency of Ga_1−xAl_xN photocathodes are simulated. Based on thin film principle, optical model of t-mode Ga_1−xAl_xN photocathodes is built. And the quantum efficiency formula is put forward. Results show that Ga_1−xAl_xN photocathodes can satisfy the need of detectors with “solar blind” property when the Al component is bigger than 0.375. There is an optimal thickness of Ga_1−xAl_xN layer to get highest quantum efficiency, and the optimal thickness is 0.3 μm. There is close relation between absorptivity and quantum efficiency, which is in good agreement with the “three-step” model. This work gives a reference for the experimental research on the Ga_1−xAl_xN photocathodes.     

Elastic constants and thermodynamic properties of Mg2SixSn1-x from first-principles calculations

<正>This paper stuides the elastic constants and some thermodynamic properties of Mg₂Si_xSn_n-1（x=0,0.25,0.5, 0.75,1） compounds by first-principles total energy calculations using the pseudo-potential plane-waves approach based on density functional theory,within the generalized gradient approximation for the exchange and correlation potential. The elastic constants of Mg₂Si_xSn_n-1 were calculated.It shows that,at 273 K,the elastic constants of Mg₂Si and Mg₂Sn are well consistent with previous experimental data.The isotropy decreases with increasing Sn content.The dependences of the elastic constants,the bulk modulus,the shear modulus and the Debye temperatures of Mg₂Si and Mg₂Si_0.5Sn_0.5 on pressure were discussed.Through the quasi-harmonic Debye model,in which phononic effects were considered,the specific heat capacities of Mg₂Si_xSn_1-x at constant volume and constant pressure were calculated.The calculated specific heat capacities are well consistent with the previous experimental data.