Ho and Ti co-doped BiFeO_3 multiferroic ceramics with enhanced magnetization and ultrahigh electrical resistivity

Bi0.9Ho0.1Fe0.95O3 and Bi0.9Ho0.1Fe0.9Ti0.05O3 ceramics were prepared and compared to reveal the effects of Ho and Ti codoping in BiFeO3. X-ray diffraction indicated that both ceramics had a high rhombohedral perovskite phase content, and microstructural analyses showed that the grains of the Bi0.9Ho0.1Fe0.9Ti0.05O3 ceramics were much smaller than those of Bi0.9Ho0.1Fe0.95O3. An electrical resistivity of more than 1 × 1014?·cm at room temperature, and a magnetic hysteresis loop with a remnant magnetization 2Mr of ～ 0.485 emu/g were obtained for Bi0.9Ho0.1Fe0.9Ti0.05O3; both were much higher than those of Bi0.9Ho0.1Fe0.95O3. Changes in the defect subsystem of BiFeO3 induced by Fe-deficiency and(Ho,Ti) codoping are proposed as being responsible for the improvement in the properties.     

Synthesis, electrical resistivity, thermo-electric power and magnetization of cubic ZnMnO3

Cubic ZnMnO₃ powder in the form of well-crystalline nanoflakes have been synthesized at low temperatures from a nitrate precursor. The electrical properties of cubic ZnMnO₃ samples have been established by DC resistivity (ρ) and thermo-electric power (Seebeck coefficient) measurements on a pressed pellet. The material exhibits insulator behavior with 0.7 eV acceptor ionization energy in the measured temperature range of 170-300 K. The thermo-electric power indicates a positive sign of the charge carriers. The obtained material exhibits a superparamagnetic signature with a blocking temperature of 9 K and the ZFC-FC splitting temperature of 15 K.     

溅射制备Ge,Nb共掺杂窄光学带隙和低电阻率的TiO2薄膜

采用射频磁控溅射技术制备了Ge,Nb共掺杂的锐钛矿结构TiO₂薄膜,详细探讨了薄膜的结构、电阻率及光学带隙等性质随Ge,Nb掺杂量、溅射功率和热处理温度等参数的变化,发现Ge,Nb共掺杂可以同时调节TiO₂薄膜的光学带隙和电阻率.体积分数约为6%Nb和20%Ge的共掺杂TiO₂薄膜电阻率由10⁴Ω/cm减小至10^-1Ω/cm,光学带隙由3.2 eV减小至1.9 eV.退火后掺杂TiO₂薄膜不仅显示更低的电阻率,还表现出更强的可见-红外光吸收.结果表明,改变Ge,Nb的掺杂量和退火条件能够制备出电阻率和带隙都可调的TiO₂薄膜.     

Variations of microhardness with solidification parameters and electrical resistivity with temperature for Al-Cu-Ag eutectic alloy

Al-Cu-Ag eutectic alloy was directionally solidified upwards with different growth rates (1.83-498.25 μm/s) at a constant temperature gradient (8.79 K/mm) and with different temperature gradients (3.99-8.79 K/mm) at a constant growth rate (8.30 μm/s) by using a Bridgman type directional solidification apparatus. The dependence of microhardness (HV) on the growth rate (V), temperature gradient (G) and microstructure parameter (λ) were found to be HV = k₁ V^0.10, HV = k₂ G^0.13 and HV = k₃ λ^−0.22, respectively. The electrical resistivity of the Al-Cu-Ag eutectic cast alloy increases linearly with the temperature in the range of 300-780 K. The enthalpy of fusion and specific heat change during melting for same alloy were also determined to be 223.8 J/g, and 0.433 J/g K, respectively by a differential scanning calorimeter from heating curve during the transformation from eutectic solid to eutectic liquid.     

双掺杂锰酸钙基热电陶瓷的制备及电学性能研究

利用传统固相反应法成功制备出Nb掺杂量x不同的Ca_0.9Yb_0.1Mn_1-xNb_xO₃热电陶瓷. X射线衍射分析和扫描电子显微镜分析表明: 样品均形成了单一的钙钛矿正交结构,空间群为Pnma. 晶格常数a和晶胞体积随着Nb掺杂量x的增加而增大,陶瓷样品具有很好的结晶度和很高的致密性, 相对密度达到97%左右. 在3 关键词： 3陶瓷')" href="#">CaMnO₃陶瓷 电阻率 Seebeck系数     

La调节Pb(Zr,Sn,Ti)O_3反铁电陶瓷的相变与电学性质

利用X射线衍射、弱场介电温度谱、强场极化强度研究了不同La含量(Pb1-xLa2x3)(Zr06Sn03Ti01)O3(000≤x≤012)(PLZSnT)陶瓷的相变与电学特性.实验发现,随La含量增大,室温下材料由铁电三方相(x=000)转变为反铁电四方相(003≤x≤009)和立方相(x=012).介电测试表明,La含量增大,反铁电→顺电相变温度降低,峰值介电常量减小.在x=006的PLZSnT三元相图中,反铁电四方相区扩大到Ti含量约为18at%,该系统反铁电陶瓷具有“窄、斜”型双电滞回线和“三电滞回线”;在高Zr、高Sn区,反铁电→顺电相变呈现弥散相变和介电频率色散特征,即反铁电极化弛豫现象.从ABO3钙钛矿结构的容忍因子(t)和反铁电相的结构特征出发,讨论了La对Pb(Zr,Sn,Ti)O3相变与电学性质的影响机理 关键词： 场诱相变 弛豫型反铁电体 介电性能 La调节Pb(Zr Sn Ti)O3     

Preparation and dielectric properties of BaZr0.1Ti0.9O3 ceramics with different grain sizes

BaZr_0.1Ti_0.9O₃ ceramics with grain sizes of 0.75 and 2.60?µm have been prepared via solid-state reaction. Optimum parameters for calcination and sintering have been found in order to obtain pure perovskite phase, high density ceramics and homogeneous microstructures. The dielectric data show a diffuse phase transition with a mixed ferroelectric-relaxor character at a maximum at 87–92°C, with a small thermal hysteresis of 2–3°C. A tendency towards a more diffuse character of the ferro–para phase transition towards the full relaxor behaviour is observed as small in the ceramic grain size. Better dielectric properties in the coarse ceramics with higher permittivity up to 14,000 at the transition temperature by comparison with 5000 for the fine one, are observed as a consequence of higher tetragonal distortion and higher density. The differences in the dielectric spectra found for the two grain sizes were interpreted as a consequence of the higher degree of inhomogeneity in the fine ceramics and to different grain boundary properties induced by the different sintering temperatures.     

高温无铅BaTiO_3-(Bi_(1/2)Na_(1/2))TiO_3正温度系数电阻陶瓷阻抗和介电谱分析

采用固相反应法制备了Y2O3施主掺杂的92 mol%BaTiO3-8 mol%(Bi1/2Na1/2)TiO3(BBNT8)高温无铅正温度系数电阻(positive temperature coe?cient resistivity,PTCR)陶瓷.利用透射电镜观察材料的显微结构,发现陶瓷的显微结构主要包括晶粒和晶界两部分,观察不到明显的壳层结构.进一步利用交流阻抗谱研究了陶瓷的宏观电学性能,发现陶瓷的总电阻是晶粒和晶界两部分的贡献,而晶粒电阻很小,在居里温度以上变化不大,材料的PTCR效应主要是晶界部分的贡献.当温度高于居里温度时,随着温度的升高,晶界介电常数逐渐减小,导致势垒增加,晶界电阻增大,从而产生正温度系数效应.最后,通过测试材料的介电频谱特性,研究计算了陶瓷的室温电阻率.