The low-temperature sintering and microwave dielectric properties of （Zno.7Mgo.3） TiO3 ceramics with H3BO3

The effects of the addition of H3BO3 on the microstructure, phase formation, and microwave dielectric properties of （Zn0.TMg0.3）TiO3 ceramics sintered at temperatures ranging from 890 ℃ to 950 ℃ are investigated. H3BO3 as a sintering agent can effectively lower the sintering temperature of ZMT ceramics below 950 ℃due to the liquid-phase effect. The microwave dielectric properties are found to strongly correlate with the amount of H3BO3. With the increase in H3BO3 content, the dielectric constant （er） monotonically increases, but the quality factor （Q x f） reaches a maximum at 1 wt% H3BO3, and the apparent density of ZMT ceramics with H3BO3〉 1 wt% gradually decreases. At 950 ℃, the ZMT ceramics with 1% H3BO3 exhibit excellent microwave dielectric properties： er = 19.8, and Q x f -- 43800 GHz （8.94 GHz）.     

Effects of A1 site occupation on dielectric and ferroelectric properties of Sr4CaRTi3Nb7O30（R=Ce,Eu） tungsten bronze ceramics

Sr4Ca RTi3Nb7O30（R = Ce, Eu） tungsten bronze ceramics are prepared by a standard solid state reaction method. The effects of A1 site occupation on the dielectric and ferroelectric properties of Sr4 Ca RTi3Nb7O30（R = Ce, Eu） tetragonal tungsten bronzes are investigated. The Sr4 Ca Ce Ti3Nb7O30 shows a normal transition behavior due to the closer size ion occupation in A1 sites, which could suppress the distortion of B2 octahedra effectively. Sr4 Ca Eu Ti3Nb7O30 ceramic exhibits two dielectric anomalies, which might be related to the fact that the large radius difference between Ca^2＋ and Eu^3＋ could lead to the uneven distribution of Ca^2＋ and Eu^3＋ in A1 sites and form two slightly different kinds of compositions with different transition temperatures in the structure. Our results indicate that the ionic radius difference in A1 sites plays an important role in determining the dielectric and ferroelectric natures of the filled tungsten bronze ceramics. Polarization–electric field（P–E） curves are evaluated at room temperature and both of them show hysteresis loops. Sr4 Ca Ce Ti3Nb7O30 shows a fat hysteresis loop, indicating the long-range ferroelectric order in the ceramic. The current density–electric field（J–E） curves are measured at room temperature with a largest leakage current density of ～ 10^-6A/cm^2, indicating that their leakage currents are rather low.     

Effects of BaCu（B2O5 ） addition on sintering temperature and microwave dielectric properties of Ba5Nb4O15–BaWO4 ceramics

The effects of BaCu(B2O5)(BCB) addition on the microstructure, phase formation, and microwave dielectric properties of Ba5Nb4O15–BaWO4ceramic are investigated. As a sintering aid, BaCu(B2O5) ceramic could effectively lower the sintering temperature of Ba5Nb4O15–BaWO4ceramic from 1100?C to 950?C due to the liquid-phase effect. Meanwhile,BaCu(B2O5) addition effectively improves the densification of Ba5Nb4O15–BaWO4ceramic and significantly influences the microwave dielectric properties. X-ray diffraction analysis reveals that Ba5Nb4O15and BaWO4coexist with no crystal phase of BaCu(B2O5) in the sintered ceramics. The Ba5Nb4O15–BaWO4ceramics with 1.0 wt% BaCu(B2O5) sintered at 950?C for 2 h presents good microwave dielectric properties of εr = 19.0, high Q × f of 33802 GHz and low τfof2.5 ppm/?C.     

Effects of annealing temperature on the electrical property and microstructure of aluminum contact on n-type 3C–SiC

The 3C-SiC thin films used herein are grown on Si substrates by chemical vapor deposition. A1 contacts with differ- ent thickness values are deposited on the 3C-SiC/Si （100） structure by the magnetron sputtering method and are annealed at different temperatures. We focus on the effects of the annealing temperature on the ohmic contact properties and mi- crostructure of A1/3C-SiC structure. The electrical properties of A1 contacts to n-type 3C-SiC are characterized by the transmission line method. The crystal structures and chemical phases of A1 contacts are examined by X-ray diffraction, Raman spectra, and transmission electron microscopy, respectively. It is found that the A1 contacts exhibit ohmic contact behaviors when the annealing temperature is below 550 ℃, and they become Schottky contacts when the annealing tem- perature is above 650 ℃. A minimum specific contact resistance of 1.8 × 10-4 Ω cm2 is obtained when the A1 contact is annealed at 250 ℃.     

Growth,defects,and properties of GdCa4O（BO3）3 and Nd：GdCa4O（BO3）3 crystals

Pure and neodymium-doped gadolinium calcium oxoborate crystals of high quality were grown by the Czochralski method.The orientation of crystal was precisely determined,and the samples for measurements were prepared.Through synchrotron x-ray topography and high-resolution x-ray diffractometry,the twin structure was discovered.Some properties such as the figure of merit value,and dielectric,piezoelectric,and elastic constants were meausured along with a discussion of the anisotropy of the laser properties.