Peculiarities of pulsed ion implantation from a laser plasma containing multiply charged ions

A mathematical model describing the dynamics of a pulsed laser plasma with multiply charged ions, as well as the formation of the accelerated ion flow in an external magnetic field, is developed. Experimental studies and mathematical simulation by the particle-in-cell method are used to determine the role of multiply charged ions in the process of ion implantation into a silicon substrate from the pulsed plasma containing singly and doubly charged titanium ions. The plasma spreads between parallel-plate electrodes (Ti target and Si substrate) along the normal to the surface of the target. Ions are accelerated by high-voltage negative pulses applied to the substrate. It is found that doubly charged ions effectively participate in the implantation process when an external electric field is applied very soon after the laser action on the target. The application of a high-voltage pulse with an amplitude of 50 kV 0.5 μs after a laser pulse leads to ion implantation with an energy close to 100 keV. With increasing delay in the application of the high-voltage pulse, the upper boundary of the energy spectrum of implanted ions is displaced towards lower energies. Comparison of the depth profiles of titanium distribution in silicon calculated from the results of simulation are compared with the experimental profiles shows that the model developed here correctly describes the formation of the high-energy component of the ion flow, which is responsible for defect formation and doping of deep layers of the substrate.     

Recombination processes in atomic clusters irradiated by superintense femtosecond laser pulses

Various mechanisms of recombination of electrons with multiply charged atomic ions in atomic clusters irradiated by superintense femtosecond laser pulses are discussed. All of the recombination mechanisms are shown to take a time considerably longer than the laser pulse duration and, hence, they can develop only in a homogeneous, fairly rarefied cluster plasma after pulse termination. All autoionization states of multiply charged ions in a dense cluster plasma have been found to be destroyed by the Holtsmark electric field.     

Linear Stark effect in spectroscopy and luminescence of doped inorganic insulating crystals

The various effects in spectroscopic and luminescent properties of doped inorganic insulating crystals connected with the linear Stark effect (LSE) in the spectra of inversionless impurity centers are systematized. The phenomena connected with both the LSE in a uniform external electric field and in internal Coulomb fields of charged defects in crystal lattices are discussed. These include: the pseudo-Stark splitting (PSS) in the spectra of transition metals and rare-earth ions in an external field; the PSS in the spectra of impurity ions induced by a ferroelectric phase transition; the drastic shift of photoionization thresholds of ions in multisites; the off-resonant persistent hole-burning in the zero-phonon lines of inversionless centers; and the photoelectric anomalies of optically excited ruby.     

中等光强纳秒激光电离苯团簇产生多价碳离子的数值模拟和实验研究

飞秒强激光与团簇相互作用产生多价离子的现象已被广泛报道,然而近期多个研究小组发现当功率密度低至1010W/cm2的纳秒激光照射团簇时,同样也观察到了多价离子的存在.虽然可以用"多光子电离引发-逆韧致吸收加热-电子碰撞电离"电离机理对这种现象进行解释,但是缺乏相应的数值模拟.建立了一个简化的数值模型,根据有质动力势Up计算团簇内电子能量,再由Lotz公式计算出相应的电离截面,最后由动力学反应速率方程计算出团簇内多价碳离子随时间的演变.详细分析了团簇尺寸、电子密度等关键参数对多价离子产生的影响.数值模拟结果表明:团簇电离在小于0.7 ns时间尺度内完成,C2+,C3+和C4+多价离子强度达到平衡后,离子相对强度由大到小依次为C2+,C3+,C4+,这与实验结果相一致;多价离子的价态随着团簇尺寸的增加而升高,半径为5.6 nm的苯团簇比半径为3 nm的苯团簇更容易产生高价态的离子,这也与实验结果相一致.     

Intersections of quasi-energy levels in the relativistic theory of multiply charged ions

The relativistic generalization of the quasi-energy method is given with the help of which the influence of an alternating electric field on the energy levels (2 $\text{1}\text{2}$ 0), (2 $\text{1}\text{2}$ 1) of multiply charged H-like ions is investigated. Intersections are found of quasi-energy levels in external fields with frequencies ω₀ ? ΔE_L and definite values of the field amplitude.     

Cluster-assisted generation of multiply charged ions in nanosecond laser ionization of seeded furan beam at 532 and 1064 nm

The multiply charged ions of C ^{q +} (q ≤ 4), O ^{q +} (q ≤ 6) were produced when a furan cluster beam interacted with nanosecond 1064 and 532 nm lasers at intensities of 10¹⁰–10¹² W/cm². It is shown that O⁶⁺ and C⁴⁺ ions were the dominant multiply charged species at 1064 nm, while C²⁺, C³⁺, O²⁺, O³⁺ ions were the main multiply charged species at 532 nm. By varying the electric field in the extraction region of the time of flight mass spectrometer (TOFMS), two types of ions were extracted, one of which had large kinetic energy and narrow space distribution, and the other had small kinetic energy and broad space distribution. The formation channels for He-like ions of C⁴⁺ and O⁶⁺ are discussed.     

Nonlinear calculation of the electric field strength on the surface of a melting hailstone in a thundercloud

The contribution of aerodynamic pressure acting on the surface of a water layer to a total electric field near the free surface of the layer is considered. The layer covers a charged melting hailstone moving parallel to the external electrostatic field vector. An asymptotic analytical expression for the electric field strength near a water-covered hailstone is derived in an approximation that is quadratic in the amplitude of capillary oscillations of a charged conducting liquid layer on the surface of the hailstone. It is found that the motion of the hailstone in ambient air influences the total electric field near the hailstone only slightly but noticeably enhances energy exchange between neighboring oscillation modes. An air flow about the hailstone is shown to have an appreciable effect on the possibility of nonlinear resonance energy exchange between initially excited modes and modes due to the nonlinear interaction.     

Quantum-Confined Stark Effects in a Single GaN Quantum Dot

Using analytical expressions for the polarization field in GaN quantum dot, and an approximation by separating the potential into a radial and an axial, we investigate theoretically the quantum-confined Stark effects. The electron and hole energy levels and optical transition energies are calculated in the presence of an electric field in different directions. The results show that the electron and hole energy levels and the optical transition energies can cause redshifts for the lateral electric field and blueshifts for the vertical field. The rotational direction of electric field can also change the energy shift.     

Investigating the charge states of atoms and the directed movement of electrons in a metal

Research into the interaction of ions with a surface and the formation of contact potential difference, galvanic electricity, and alternating current shows that the directed movement of electrons (an electric current) occurs in a metal in the absence of an electric field of the poles of the source of electrical energy in the metal and against the field of charged electrodes. It is assumed that the movement of electrons in the metal occurs under the action of the Coulomb interactions of valence electrons associated with atoms.     

Effect of nonuniform permittivity of a solid-state matrix on the spectral width of erbium ion luminescence

The Stark splitting of the energy levels of Er³⁺ ions implanted in a structure made up of alternating layers of silicon dioxide and quasi-ordered silicon nanocrystals is calculated. The level splitting is caused by the electric field of the image charges induced at the interfaces between layers with different permittivities. The splitting was established to increase as the contrast in permittivity between the silicon dioxide and silicon nanocrystal layers increases, as well as when the erbium ions approach the layer interface. The results obtained offer an adequate explanation of the experimentally observed additional broadening of the erbium photoluminescence band (0.8 eV) with increasing characteristic size of the silicon nanocrystals.     

Calculation of the Dynamic Stark Effect in the Many-Level Approximation

A new method for calculating the dynamic Stark effect in a circular polarized electric field of arbitrary strength and frequency is proposed. The basic equations of the method are given. By way of illustration the results of calculation of the shift and splitting of energy levels of a He atom in a circular polarized electric field are considered.     

Registration of accelerated multiply charged ions from the cathode jet of a vacuum discharge

The parameters of Cuⁿ⁺ and Taⁿ⁺ ions from the plasma of a vacuum spark with a voltage up to 2.5 kV and a current rise rate up to 2 × 10¹⁰ A/s are studied using the time-of-flight method. At the initial stage of the discharge, bursts of beams of accelerated multiply charged ions from the cathode flame have been detected. It is established that the charge state distribution and energy of a beam are controlled by the initial voltage U ₀ of the capacitor. Upon an increase in this voltage, the average charge of copper ions attains the value +9, and the average charge of tantalum ions can be as high as +20, while the energy attains values of 150 and 350 keV, respectively. It is found that the average energy of ions with charge Z increases in proportion to the charge and is close to the energy eZU ₀ which would have been acquired by ions accelerated in the electric field of the discharge gap.     

On the stark broadening of isolated lines of F(II) and Cl(III) by plasmas

Recent measurements of Stark widths of isolated lines emitted by singly-ionized fluorine atoms and doubly-ionized chlorine atoms are compared with the corresponding values calculated by the semiempirical impact approximation of Griem. A discussion is given of some of the difficulties which arise particularly when this method is applied to lines from multiply charged ions. On the basis of these comparisons, some new values are proposed for the threshold Gaunt factors of the ions under consideration, and these are compared with values deduced earlier for a number of other ions. Some systematic trends are observed.     

Electrostatic guiding of cold polar molecules on a chip

We propose a novel scheme to guide cold polar molecules on the surface of an insulating substrate (i.e. a chip) using an electrostatic field generated by the combination of a pair of parallel charged wires and a grounded metal plate. The spatial distributions of the electric fields from the above charged-wire layout and their Stark potentials for cold CO molecules and dipole forces are calculated, and the relationships between the electric field and the geometric parameters of our charged-wire system are analyzed. Our study shows that our charged-wire scheme can be used to guide cold polar molecules in the weak-field-seeking state, and to construct various molecular optical elements, such as a molecular funnel, a molecular beam splitter and a molecular interferometer and so on, to form various integrated molecular optical elements and their molecular chips, and even to generate a continuous wave (CW) cold molecular beam by using a low-pass energy filter based on bent two-wire guiding.     

Entanglement in a three spin system controlled by electric and magnetic fields

We study the effect of electric field and magnetic flux on spin entanglement in an artificial triangular molecule built of coherently coupled quantum dots. In a subspace of doublet states an explicit relation of concurrence with spin correlation functions and chirality is presented. The electric field modifies superexchange correlations and shifts many-electron levels (the Stark effect), as well as changing spin correlations. For some specific orientation of the electric field one can observe monogamy, for which one of the spins is separated from two others. Moreover, the Stark effect manifests itself in a different spin entanglement for small and strong electric fields. The role of magnetic flux is opposite: it leads to circulation of spin supercurrents and spin delocalization.     

Many-body effects in the formation of multiply charged ions in a strong laser field

Some of the many-body effects in the formation of multiply charged ions in a laser field have been taken into account: inelastic tunneling, collective tunneling, and magnetic moment projection relaxation of the atomic core. Strong fields with an intensity exceeding 10¹⁷ W cm⁻² are considered when the magnetic component of the laser field acts on the free motion of a photoelectron; therefore, the formation of multiply charged ions through rescattering becomes unlikely. Numerical calculations have been performed for Ar⁹⁺ … Ar¹³⁺, Kr¹⁹⁺ … Kr²³⁺, Rb¹⁰⁺, and Rb¹¹⁺ ions. A significant contribution of collective tunneling, which was not observed in weaker fields investigated previously, has been revealed. Allowance for collective tunneling is shown to reduce the intensity leading to saturation by more than 10%. In this case, the yield of multiply charged Rb ions changes by an order of magnitude, while the yield of multiply charged Ar and Kr ions changes by more than a factor of 2. Comparison with experimental data on the formation of argon ions under the action of a linearly polarized laser pulse is made.     

GaAs半导体量子箱中电子的斯塔克效应

在有效质量近似下,利用变分法研究了在GaAs半导体量子箱中电子能量的斯塔克效应.结论表明：电场平行于量子箱的中心轴时,斯塔克能移只与量子箱高度有关;电场垂直于中心轴时,斯塔克能移仅仅与它的截面尺寸有关.当电场方向与中心轴夹角为任意角时,斯塔克能移与高度和截面都有关.同时在低场和高场极限下,理论上分析了电场大小和量箱尺寸对斯塔克能移的影响.     

Application of relativistic Coulomb Green's function to the calculation of transition probabilities in an electric field

The probability of transitions between the levels of multiply charged ions in a strong electric field are expressed in terms of the matrix elements of the relativistic Coulomb Green's function. The probability of magnetic dipole decay of the 2s1/2 level of a hydrogenlike ion in a field F=10⁷ V/cm is calculated.Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 2, pp. 38–42, February, 1981.I should like to express my thanks to Professor L. N. Labzovskii for numerous discussions and valuable comments.     

Imaginary-time method in quantum mechanics and field theory

An imaginary-time method was developed for calculating the probability of particle transmission through smooth barriers variable with time. Within the imaginary-time method, the tunneling process is described by using classical equations of motion written in terms of an imaginary time (t → it), while the probability of tunneling is determined by the imaginary part of the action functional, this imaginary part being calculated along the subbarrier particle trajectory. The fundamentals of the imaginary-time method are surveyed, and its applications in the theory of atomic-state ionization under the effect of constant electric and magnetic fields that have various configurations, in the field of intense monochromatic laser radiation and of an ultrashort electromagnetic pulse, in the process of Lorentz ionization of atoms and ions during their motion in a strong magnetic field, etc., are outlined. The applications of the imaginary-time method in relativistic cases—for example, in the theory of ionization of levels of multiply charged ions whose binding energy is commensurate with the electron rest energy—and in quantum field theory (Schwinger effect, which consists in the production of electron-positron pairs from a vacuum by a superstrong external field) are briefly described. Particular attention is given to methodological issues and details of the imaginary-time method that are of importance in solving specific physics problems, but which are usually skipped in original publications.     

GaAs半导体量子箱中电子的斯塔克效应

在有效质量近似下,利用变分法研究了在GaAs半导体量子箱中电子能量的斯塔克效应.结论表明:电场平行于量子箱的中心轴时,斯塔克能移只与量子箱高度有关;电场垂直于中心轴时,斯塔克能移仅仅与它的截面尺寸有关.当电场方向与中心轴夹角为任意角时,斯塔克能移与高度和截面都有关.同时在低场和高场极限下,理论上分析了电场大小和量箱尺寸对斯塔克能移的影响.