Quantitative Depth Profiling Using Online-Laser Ablation of Solid Samples in Liquid (LASIL) to Investigate the Oxidation Behavior of Transition Metal Borides

The increased demand for sustainability requires, among others, the development of new materials with enhanced corrosion resistance. Transition metal diborides are exceptional candidates, as they exhibit fascinating mechanical and thermal properties. However, at elevated temperatures and oxidizing atmospheres, their use is limited due to the fact of their inadequate oxidation resistance. Recently, it was found that chromium diboride doped with silicon can overcome this limitation. Further improvement of this protective coating requires detailed knowledge regarding the composition of the forming oxide layer and the change in the composition of the remaining thin film. In this work, an analytical method for the quantitative measurement of depth profiles without using matrix-matched reference materials was developed. Using this approach, based on the recently introduced online-LASIL technique, it was possible to achieve a depth resolution of 240 nm. A further decrease in the ablation rate is possible but demands a more sensitive detection of silicon. Two chromium diboride samples with different Si contents suffering an oxidation treatment were used to demonstrate the capabilities of this technique. The concentration profiles resembled the pathway of the formed oxidation layers as monitored with transmission electron microscopy. The stoichiometry of the oxidation layers differed strongly between the samples, suggesting different processes were taking place. The validity of the LASIL results was cross-checked with several other analytical techniques.     

Nitrogen depth distribution, interface and structure analysis of SiNx layers produced by low-energy ion implantation

Thin silicon nitride (SiN _x ) layers with the stoichiometric N/Si ratio of 1.33 in the maximum of the concentration depth distributions of nitrogen were produced by implanting 10 keV¹⁵N ₂ ⁺ in 100 silicon at room temperature under high vacuum conditions. The depth distribution of the implanted isotope was measured by resonance nuclear reaction analysis (NRA), whereas the layer structure of the implanted region and the geometrical thickness of the layers were characterised by high resolution transmission electron microscopy (TEM). SiN _x layers with a thickness of about 30 nm were determined by NRA. Channeling Rutherford backscattering spectrometry was used to determine the disorder in the silicon substrate. Sharp interfaces of a few nanometers between the highly disordered implanted region and the crystalline structure of the substrate thickness were observed by TEM. The high thermal stability of SiN _x layers with N/Si ratios from under to over stoichiometric could be shown by electron beam rapid thermal annealing (1100 °C for 15 s, ramping up and down 5 °C/s) and NRA.     

A simple method for evaluation of optical scattering effect on the Raman signal of a sample beneath an Intralipid layer

Optical scattering by biological tissues largely deteriorates the efficiency of the Raman analysis of these tissues. To evaluate the effect of scattering on Raman depth profiles (RDPs), we developed a simple method using a thin-layered sample mimicking real tissues and a conventional Raman microscope. The sample comprised three layers: a silicon wafer, a thin aqueous film containing Intralipid particles as scatters, and a fused silica window; this design was used to mimic real skin tissues quantitatively. The multi-scattering effect, which deteriorates spatial resolution, was clearly observed as broadening of RDPs. Decrease in Raman intensity was also systematically examined as a function of both the concentration of the Intralipid particles and depth of the film, and evaluated using Lambert-Beer's law. The abovementioned observations can be quantitatively explained on the basis of the scattering cross-section and concentration of the Intralipid particles, indicating that the method is useful for the quantification of the deterioration of Raman measurements due to optical scattering.     

An effect of measurement conditions on the depth resolution for low‐energy dual‐beam depth profiling using TOF‐SIMS

An effect of measurement conditions on the depth resolution was investigated for dual‐beam time of flight‐secondary ion mass spectrometry depth profiling of delta‐doped‐boron multi‐layers in silicon with a low‐energy sputter ion (200 eV – 2 keV O₂⁺) and with a high‐energy primary ion (30 keV Bi⁺). The depth resolution was evaluated by the intensity ratio of the first peak and the subsequent valley in B⁺ depth profile for each measurement condition. In the case of sputtering with the low energy of 250 eV, the depth resolution was found to be affected by the damage with the high‐energy primary ion (Bi⁺) and was found to be correlated to the ratio of current density of sputter ion to primary ion. From the depth profiles of implanted Bi⁺ primary ion remaining at the analysis area, it was proposed that the influence of high‐energy primary ion to the depth resolution can be explained with a damage accumulation model. Copyright © 2013 John Wiley & Sons, Ltd.     

Analyse du titane et de ses alliages par spectrométrie d'émission dans l'ultraviolet-vide

The large ultraviolet spectrograph for analysis in vacuum (VUV spectrograph) developed by ONERA and described in a previous article, has been used for multielements quantitative analysis: in pure titanium, concentrations of oxygen, nitrogen, hydrogen and carbon have been determined as well as silicon and iron impurities; in titanium-based alloys, addition metals at high concentration, Al, V, Mo, Zr, Si, have also been determined simultaneously with the gaseous elements and impurities. The analytical lines located between 200 and 2600 Å and corresponding to highly ionized atoms (II to VI) have been selected. The stability of the equipment has been tested and the repeatability of results has been investigated. This new analytical technique allows the study of various surface phenomena such as the variations in oxygen, nitrogen and carbon concentrations with a resolution in depth of a few microns. The method allows it to envisage the quantitative analysis of surface phenomena on metal films with a thickness below one micron.     

Characterisation of 13C implantations in silicon by NRA [13C(p,γ)14N] and RBS

SiC_X layers close to the surface have been produced by implanting 40 keV ¹³C ions into silicon with a fluence of 6×10¹⁷ at./cm² (j=12 μA/cm²) at room temperature (RT). Depth distributions and areal densities (doses) of the implanted carbon have been analysed by the nuclear reaction ¹³C(p,γ)¹⁴N (NRA) which shows a sharp resonance in the excitation function at a proton energy of 1748 keV (Γ=75 eV FWHM). The depth resolution at the surface amounts to 31 nm due to energy spread of the proton beam (1.2 keV FWHM) and resonance width. The surface resolution of the NRA can be increased up to 8 nm when tilting the sample (surface normal) to an angle of 75° with respect to the proton beam direction. Using a NaI detector the detection limit of ¹³C in silicon is approximately 1 at.%. Comparative elastic backscattering measurements with ⁴He⁺ projectiles were performed at 2 MeV (Rutherford backscattering spectroscopy, RBS) and 3.45 MeV (high energy backscattering, HEBS) at a backscattering angle of 171°. The measured ¹³C depth distributions have been compared with a distribution calculated by the Monte Carlo algorithm T-DYN.     

Measurement of lithium diffusion coefficient in thin metallic multilayer by neutron depth profiling

Diffusion of Li ions in thin sandwich films with copper or lead encompassing layers (obtained by ion beam sputtering deposition technique) has been studied. These metals are promising candidates for electrodes in lithium-ion batteries. It is because they exhibit an ability to store and release Li ions during charging and discharging processes. Lithium diffusion was induced in samples by thermal annealing cycles. The lithium depth profile was measured using a nondestructive neutron depth profiling technique after each thermal annealing step. The analysis of experimental data allowed to evaluate the lithium depth profiles and directly calculate the diffusion coefficients.     

Experimental shift allowance in the deconvolution of SIMS depth profiles

We study the deconvolution of the secondary ion mass spectrometry (SIMS) depth profiles of silicon and gallium arsenide structures with doped thin layers. Special attention is paid to allowance for the instrumental shift of experimental SIMS depth profiles. This effect is taken into account by using Hofmann's mixing‐roughness‐information depth model to determine the depth resolution function. The ill‐posed inverse problem is solved in the Fourier space using the Tikhonov regularization method. The proposed deconvolution algorithm has been tested on various simulated and real structures. It is shown that the algorithm can improve the SIMS depth profiling relevancy and depth resolution. The implemented shift allowance method avoids significant systematic errors of determination of the near‐surface delta‐doped layer position. Copyright © 2013 John Wiley & Sons, Ltd.     

A further investigation of the influence of implanted foreign ion species on the anodic oxidation of Ti

The effects of implanted in species Pt⁺, Lu⁺, Yb⁺ and Xe⁺ on the anodic oxidation of Ti in glycol borate electrolyte have investigated. Rutherford backscattering and nuclear reaction measurements have shown that post-implantation thermal treatment at 700°C produces a marked improvement in the resistance to surface oxidation of Ti with implanted Pt⁺ ions, which may form cluster to act catalytically. However, this treatment causes enhancement of oxidation for Ti with Lu⁺ and Yb⁺ implants. Radiation damage influence on oxidation has been examined using implanted Xe⁺ ions, with results which show that surface oxidation of Ti is enhanced, but there are indications that this enhancement may due, in part, to the lattice strain produced when the Ti accomodates the Xe⁺ ions.     

Micro and surface analysis with fast heavy ions

The desorption of atomic and molecular species from surfaces bombarded by fast heavy ions (Z ? 20; E ? 0.5 MeV/amu) is attractive for surface and microscopic characterization. Only a low-intensity probe beam is needed, the escape depth of desorbed species is shallow (ca. 10 Å), and desorbed ions are efficiently detected with a time-of-flight mass spectrometer. Thus, particle-induced desorption mass spectrometry (PDMS) maintains sample integrity and charging effects are avoided. PDMS is useful for surface analysis of glasses and plastics by using californium-252 fission fragments for bombardment. Inorganic and organic surface constituents can be detected simultaneously; mass resolution is good. For lithium in glass, the detection limit is about 1 pg (ca. 100 μg g^?1. The PDMS technique can be combined with sequential ion etching for depth profiling. The feasibility of PDMS for microscopic analysis with a collimated 84-MeV Kr⁷⁺ beam (target diameter ca. 11 μm) is discussed.     

Estimation of dephth profiles of boron in silicon on ion beam etched slping cuts by means of neutron induced autoradiography

A new method for the estimation of depth profiles of boron in silicon in extremely thin layers by means of neutron induced autoradiography is described. By the aid of ion beam etching it is possible to produce sloping cuts with angles down to 10^?4–10^?5. This means an extension of the depth profile by a factor of up to 5·10⁴. In this way a depth resolution of about ±10 nm is possible. The autoradiographic model of the sloping cut for the evaluation is described and first results are discussed.     

X-ray microanalysis of thin film layered specimens containing light elements

Analysis of thin film layers on bulk substrates is carried out using a technique based on the (z) model of the depth distribution of X-ray emission. Both the composition and thickness of individual layers can be determined provided that the same element is not present in more than a single layer.The application of this method to the analysis of thin titanium-boron nitride bilayers on silicon or molybdenum substrates is discussed. X-ray intensities were measured by energy dispersive spectroscopy with a windowless or ultra thin window detector. The thickness of a 10 nm titanium layer could be estimated to within about ±1 nm, which is comparable with the depth resolution attainable by Auger sputter profiling.     

Depth profiling of Co/Ti – silicide films using total reflection X-ray fluorescence (TXRF) spectrometry combined with low energy ion beam etching (IBE) for sample preparation

Solid state phase epitaxy (SSPE) by rapid thermal processing (RTP) of Co/Ti double layers deposited on (100)-Si substrates is a common technique for the production of buried CoSi₂-silicide conducting layers for microelectronics technology. The understanding of the processes during the SSPE silicide formation on the atomic scale needs the study of the elemental depth distributions with nanometer scale depth resolution of all multi-layer elemental constituents at different RTP conditions. A new experimental technique, the laterally resolved TXRF analysis line scan method across the bevelled section of the sample prepared by ex-situ ion beam sputter etching, was used to obtain the multi-element depth profiles. First results on the as evaporated Co/Ti (30 nm thick) double layer system prior to the RTP and on the final CoSi₂/Ti_xCo_ySi_z-system (160 nm thickness) after the RTP were obtained.     

SIMS-characterization of ultra shallow boron-profiles after BF2+-and B+-low-energy-implantation in silicon

It has been shown using SIMS profiling that, by means of low energy ion implantation into crystalline and amorphous silicon, doping profiles with depths around 30 nm can be reproducibly produced. The deposition of a cap layer onto the silicon surface considerably improves the depth resolution of the SIMS apparatus in the case of extremely shallow doping layers. Fifty nanometre thick Au/Ge cap layers were applied successfully for the accurate measurement of the trailing course of the boron distribution. For future measurements of the course of reaction, a silicon cap layer is necessary to avoid or minimize the change of the sputter rate and the secondary ion yield in the interface region to the boron implanted silicon. A comparison with the measured boron distributions showed good agreement with simulations in the case of implantation into amorphous material.     

SIMS-characterization of ultra shallow boron-profiles after BF 2 + -and B+-low-energy-implantation in silicon

It has been shown using SIMS profiling that, by means of low energy ion implantation into crystalline and amorphous silicon, doping profiles with depths around 30 nm can be reproducibly produced. The deposition of a cap layer onto the silicon surface considerably improves the depth resolution of the SIMS apparatus in the case of extremely shallow doping layers. Fifty nanometre thick Au/Ge cap layers were applied successfully for the accurate measurement of the trailing course of the boron distribution. For future measurements of the course of reaction, a silicon cap layer is necessary to avoid or minimize the change of the sputter rate and the secondary ion yield in the interface region to the boron implanted silicon. A comparison with the measured boron distributions showed good agreement with simulations in the case of implantation into amorphous material.     

Depth profiling of Irganox‐3114 nanoscale delta layers in a matrix of Irganox‐1010 using conventional Cs+ and O2+ ion beams

Depth profiling of an organic reference sample consisting of Irganox 3114 layers of 3 nm thickness at depths of 51.5, 104.5, 207.6 and 310.7 nm inside a 412 nm thick Irganox 1010 matrix evaporated on a Si substrate has been studied using the conventional Cs⁺ and O₂⁺ as sputter ion beams and Bi⁺ as the primary ion for analysis in a dual beam time‐of‐flight secondary ion mass spectrometer. The work is an extension of the Versailles Project on Advanced Materials and Standards project on depth profiling of organic multilayer materials. Cs⁺ ions were used at energies of 500 eV, 1.0 keV and 2.0 keV and the O₂⁺ ions were used at energies of 500 eV and 1.0 keV. All four Irganox 3114 layers were identified clearly in the depth profile using low mass secondary ions. The depth profile data were fitted to the empirical expression of Dowsett function and these fits are reported along with the full width at half maxima to represent the useful resolution for all the four delta layers detected. The data show that, of the conditions used in these experiments, an energy of 500 eV for both Cs⁺ beam and O₂⁺ beam provides the most useful depth profiles. The sputter yield volume per ion calculated from the slope of depth versus ion dose matches well with earlier reported data. Copyright © 2013 John Wiley & Sons, Ltd.     

Low temperature plasma for the preparation of crater walls for compositional depth profiling of thin inorganic multilayers

An indirect, compositional depth profiling of an inorganic multilayer system using a helium low temperature plasma (LTP) containing 0.2% (v/v) SF₆ was evaluated. A model multilayer system consisting of four 10 nm layers of silicon separated by four 50 nm layers of tungsten was plasma‐etched for (10, 20, 30) s at substrate temperatures of (50, 75, and 100) °C to obtain crater walls with exposed silicon layers that were then visualized using time‐of‐flight secondary ion mass spectrometry (ToF‐SIMS) to determine plasma‐etching conditions that produced optimum depth resolutions. At a substrate temperature of 100 °C and an etch time of 10 s, the FWHM of the second, third, and fourth Si layers were (6.4, 10.9, and 12.5) nm, respectively, while the 1/e decay lengths were (2.5, 3.7, and 3.9) nm, matching those obtained from a SIMS depth profile. Though artifacts remain that contribute to degraded depth resolutions, a few experimental parameters have been identified that could be used to reduce their contributions. Further studies are needed, but as long as the artifacts can be controlled, plasma etching was found to be an effective method for preparing samples for compositional depth profiling of both organic and inorganic films, which could pave the way for an indirect depth profile analysis of inorganic–organic hybrid structures that have recently evolved into innovative next‐generation materials. Copyright © 2016 John Wiley & Sons, Ltd.     

Depth profiles of shallow implanted layers by soft ion sputtering and total-reflection X-ray fluorescence

A new method suitable for depth profiling of shallow layers on different materials is presented. It is based on a soft and planar ion sputtering combined with differential weighing, total-reflection X-ray fluorescence (TXRF) spectrometry and Tolansky interferometry. By means of a stepwise repetition of these techniques it is possible to determine both density/depth and concentration/depth profiles. The respective quantities are expressed in terms inherent only to the sample and traceable to the SI-units or subunits gram, nanometer and mole. It is a unique feature of this method that density/depth profiles can directly be obtained from measurements without any calibration or theoretical approximation. The method is applied to a Si wafer implanted with Co ions of 25 keV energy and a nominal dose of 1×10¹⁶ cm⁻². The depth resolution is shown to be <3 nm while a total depth of some 100 nm can be reached. The concentration/depth profile is compared with RBS measurements, wet-chemical etching plus TXRF and Monte Carlo simulations. In view of the fact that only similar but not exactly the same samples have been examined by these methods, a good correspondence can be noticed.     

Micro- and nano-thermal analysis applied to multi-layered biaxially-oriented polypropylene films

In this paper we compare Wollaston and silicon probes for localized thermal analysis measurements (LTA) on biaxially oriented polypropylene (BOPP) films. Up till now, no real comparison was reported in literature between the different transition temperatures measured using Wollaston and silicon probes. Using different types of probes for studying the same material proves to be very interesting. Using the Wollaston probe, the thermal properties and thickness of a 1 μm thick skin layer can be determined by through-thickness local thermal analysis measurements. The improved resolution of the silicon probes, enables the measurement of thermal properties of individual layers in a cross-sectioned film, even for layers of only 1 μm thickness. Based on the results, the silicon probes seem to be more sensitive toward the start of the melting process, since the silicon probe already penetrates at lower temperature, as compared to the Wollaston probes. This sensitivity can be exploited for studying the effect of variations in thermal history between or within samples.     

Study of thermal recrystallisation in Si implanted by 0.4-MeV heavy ions

A Si crystal layer on SiO₂/Si was implanted using 0.4-MeV Kr⁺, Ag⁺, and Au⁺ at ion fluences of 0.5 × 10¹⁵ to 5.0 × 10¹⁵ cm⁻². Subsequent annealing was performed at temperatures of 450° and 800° for 1 hour. The structural modification in a Si crystal influences ion beam channelling phenomena; therefore, implanted and annealed samples were investigated by Rutherford backscattering spectrometry under channelling (RBS-C) conditions using an incident beam of 2-MeV He⁺ from a 3-MV Tandetron in random or in aligned directions. The depth profiles of the implanted atoms and the dislocated Si atom depth profiles in the Si layer were extracted directly from the RBS measurement. The damage accumulation and changes in the crystallographic structure before and after annealing were studied by X-ray diffraction (XRD) analysis. Lattice parameters in modified silicon layers determined by XRD were discussed in connection to RBS-C findings showing the crystalline structure modification depending on ion implantation and annealing parameters.