一维分子链中激子与声子的相互作用和呼吸子解

运用连续极限近似，求解声子与激子相互作用的运动方程，得到了简谐分子链和 非简谐分子链中晶格振动的孤子解，在考虑三次非简谐势的情况下，一维分子链晶格振动具 有扭结孤子解，在考虑具有四次非简谐势的情况下，得到一维分子链晶格振动具有呼吸子解 . 关键词： 一维分子链 激子 声子 孤子 呼吸子 非线性效应     

激子-声子相互作用对三阶非线性光学性质的影响

在对激子不作任何近似的条件下,对强耦合激子声子系统中非线性光学性质在理论上进行了研究,结果表明当信号光场频率与激子频率的失谐量等于光学声子的频率时,系统的非线性光学吸收和克尔系数显著增大,从而证明了激子声子的强相互作用对介质的非线性光学性质的影响相当大。并且,与对激子作代松马利夫(Dyson-Maleev)变换近似和玻色近似的结果进行仔细的比较,发现对激子不作近似时,这种影响将进一步增大。     

声子之间相互作用对量子点中极化子性质的影响

研究了抛物量子点中弱耦合极化子的性质。采用线性组合算符和微扰法,导出了抛物量子点中极化子的基态能量。当计及电子在反冲效应中发射和吸收不同波矢的声子之间的相互作用时,讨论了对量子点中极化子的基态能量的影响。通过数值计算,结果表明,量子点中极化子基态能量随量子点的有效受限长度的减小而迅速增大,随电子-LO声子的耦合强度的增加而减少。当l₀>1.4时,声子之间的相互作用不能忽略。     

声子之间的相互作用对量子线中极化子性质的影响

研究了量子线中弱耦合极化子的性质。采用线性组合算符和微扰法导出量子线中弱耦合极化子的基态能量。在计及电子在反冲效应中发射和吸收不同波矢的声子之间的相互作用时,讨论了量子线的受限强度﹑电子-LO声子耦合强度和声子之间相互作用对量子线中弱耦合极化子的基态能量的影响。数值计算结果表明：量子线中弱耦合极化子的基态能量 随量子线的受限强度 的增大而增大, 表现出了量子线的量子尺寸效应。     

柱形量子线中极化子的电子与LO声子之间相互作用能

采用变分法，研究了柱形量子线中在考虑电子与LO声子相互作用的情况下，极化子在基态时系统的能量以及电子-LO声子之间的相互作用能。数值计算结果表明：随着柱形量子线截面半径的减小，基态能量和电子-LO声子相互作用能的绝对值都增大。     

极化子在正弦色散声子场中的性质

本文计及纵光学声子的色散,在正弦近似下,用微扰法了多原子晶体中极化子的基态能量,有效质量和自能。     

抛物量子点中弱耦合激子的光学声子平均数

研究了电子-体纵光学声子弱耦合情况下,抛物量子点中激子的性质。在有效质量近似下,采用线性组合算符和幺正变换方法研究了抛物量子点中弱耦合激子的基态能量和光学声子平均数。以GaAs半导体为例进行了数值计算,结果表明:弱耦合情况下,激子的光学声子平均数基态的能量和量子点受限强度的增大而减小,随量子点半径的增大而增大。     

声子之间的相互作用对量子线中磁极化子性质的影响

研究了量子线中弱耦合磁极化子的性质.采用线性组合算符和微扰法导出量子线中弱耦合磁极化子的基态能量.在计及电子在反冲效应中发射和吸收不同波矢的声子之间的相互作用时,讨论了量子线的受限强度、电子-LO声子耦合强度和声子之间相互作用对量子线中弱耦合磁极化子的基态能量的影响.数值计算结果表明:量子线中弱耦合磁极化子的基态能量随量子线的受限强度ω₀的增大而迅速增大.当受限强度ω₀取相同值时,电子-声子耦合强度α越大基态能量E₀越小,磁场的回旋频率ω_e越大基态能量E₀越大.在弱磁场情况下,当ω₀<0.5时,随着量子线的受限强度ω₀的减少p值迅速增大,即对于弱磁场声子之间相互作用的影响不能忽略.     

光子—声子相互作用模型的基态特性研究

采用新的相干态波函数的方法,对简单的光子－声子相互作用模型的基态特性进行了研究,非常简单地导出了模型的精确基态能与基态波函数,并且对其物理意义进行了讨论。     

Effects of confined longitudinal and interface optical phonons on excitons in an asymmetric quantum well

The interaction between exciton and confined longitudinal optical (LO) phonons, interface optical (IO) phonons in an asymmetric Ga 1 x Al x As/GaAs/Ga 0.7 Al 0.3 As square quantum well is investigated. By applying the LLP-like transformation and variational approach, the numerical results are obtained as functions of the well width and asymmetric-degree of well. The exciton-optical phonons interaction-energy has a minimum value with the increase of the well width. It is demonstrated that the LO-phonon energ...     

Interface phonons and dielectric enhancement effects on excitons in quantum well

The theory of exciton polaron in quantum well is developed. The interaction with symmetric interface phonons is shown to contribute significantly to polaron exciton binding energy. As a result, this energy depends both on effective masses of charge particles in the quantum well and on polarization properties of the barriers. The conditions are found for strong exciton–phonon coupling in quantum well.     

On the binding energies of excitons in polar quantum well structures in a weak electric field

The binding energies of excitons in quantum well structures subjected to an applied uniform electric field by taking into account the exciton longitudinal optical phonon interaction is calculated. The binding energies and corresponding Stark shifts for Ⅲ-Ⅴ and Ⅱ-Ⅵ compound semiconductor quantum well structures have been numerically computed. The results for GaAs/A1GaAs and ZnCdSe/ZnSe quantum wells are given and discussed. Theoretical results show that the exciton-phonon coupling reduces both the exciton binding energies and the Stark shifts by screening the Coulomb interaction. This effect is observable experimentally and cannot be neglected.     

Oscillatory behavior of magneto-optical interband emissions in asymmetric quantum well structures

We report on the oscillatory behavior of the photoluminescence intensity from asymmetric AlGaAs/InGaAs/GaAs quantum well structures in the presence of a perpendicular magnetic field. Two distinct photoluminescence peaks originating from transitions from the ground (e₁) and the first excited (e₂) electronic states to the heavy hole state (hh₁) are observed. The opposite phase of the oscillations shows clearly the competitive process between the transitions from the ground and first excited states. Electron transfer mechanisms cannot explain the origin of these oscillations. The optical oscillations emerge from changes in the effective electron–hole interaction.     

ZnCdSe量子阱/CdSe量子点耦合结构中的激子隧穿过程

用室温光致发光谱和飞秒脉冲抽运探测方法对不同垒宽的ZnCdSe量子阱/ZnSe/CdSe 量子点新型耦合结构中激子隧穿过程进行研究，观察到激子从量子阱到量子点的快速隧穿过 程.在ZnSe垒宽为10nm, 15nm, 20nm时，测得激子隧穿时间分别为1.8ps, 4.4ps, 39ps. 关键词： ZnCdSe量子阱 CdSe量子点 激子 隧穿     

圆柱状量子点量子导线复合系统的激子能量和电子概率分布

建立了圆柱状量子点量子导线复合系统中激子满足的方程，用微扰论求出激子能量.以CdS/HgS/CdS/HgS/CdS圆柱状量子点量子导线复合系统为例，研究了系统中电子的概率分布和系统线度对激子能量的影响.结果表明：系统中电子、空穴以及激子的能量均随量子点高度h₀的增大而减小，电子-空穴相互作用对基态激子能量的影响要大于激发态；电子沿径向方向的概率分布呈起伏状，在轴线和表面附近的概率趋于零，而在R/2附近概率最大；在量子点附近电子沿轴向方向的概率分布呈振荡特征 关键词： 量子点 量子导线 激子 能量     

Exciton lifetime in quantum well with vicinal high-density excitons

Radiative lifetime of an exciton in a GaAs quantum well (QW) is controlled by high-density excitons, which restrict the exciton coherence through scattering. In order to circumvent the phase space filling effect of high-density excitons, we have prepared a QW structure in such a way that a reservoir for high-density excitons is separated from the QW. The lifetime increases (up to 30%) with the exciton density in the reservoir and saturates at 1×10¹⁷/cm³. The upper bound lifetime is determined by the excitonic relative motion.     

Electric field induced non-linear multisubband electron mobility in V-shaped asymmetric double quantum well structure

ABSTRACT

We study the effect of the external electric field F_ext on the low-temperature electron mobility μ in an asymmetrically doped Al_xGa_1-xAs based V-shaped double quantum well (VDQW) structure. We show that nonlinearity of µ occurs under double subband occupancy on account of intersubband effects. The field F_ext alters the VDQW potential leading to transfer of subband wave functions between the wells, which affects the scattering potentials and hence μ. In the VDQW structure, due to the alloy channel layer, the alloy disorder (Al-) scattering happens to be significant along with the ionised impurity (Imp-) scattering. The non-linear behaviour of μ is because of μ^Imp, while the overall magnitude of μ is mostly due to μ^Al. The increase of difference in the doping concentrations of the outer barriers increases the nonlinearity of μ. The oscillatory character of μ is amended by varying the width of the well and barrier and also the height of the VDQW. Our results can be used to study VDQW based nanoscale field effect transistor structures.     

Resonant magnetopolaron effects in GaAs/AlGaAs multiple quantum well structures

A detailed experimental study of electron cyclotron resonance (CR) has been carried out at 4.2 K in three modulation-doped GaAs/Al_0.3Ga_0.7As multiple quantum well samples in fields up to 30 T. A strong avoided-level-crossing splitting of the CR energies due to resonant magnetopolaron effects is observed for all samples near the GaAs reststrahlen region. Resonant splittings in the region of AlAs-like interface phonon modes of the barriers are observed in two samples with narrower well width and smaller doping concentration. The interaction between electrons and the AlAs interface optical phonon modes has been calculated for our specific sample structures in the framework of the memory-function formalism. The calculated results are in good agreement with the experimental results, which confirms our assignment of the observed splitting near the AlAs-like phonon region is due to the resonant magnetopolaron interaction of electrons in the wells with AlAs-like interface phonons.     

外加磁场下抛物型量子线中的带电激子

在一维等效模型下采用有效差分法对抛物型量子阱线中带电激子的束缚能进行了计算,分析了约束势以及磁场对带电激子束缚能的影响,并对带正电激子(X⁺)和带负电激子(X^-)的情况进行了比较.结果表明:电子和空穴的振子强度对带电激子的稳定性有重要影响,X⁺的束缚能不总是比X^-的大,随着空穴振子强度的增加束缚能的函数曲线将会出现交叉,这同实验得到的结果符合;磁场的存在会增加粒子间的束缚,并且磁场对束缚能的影响同振子强度大小有关. 关键词： 带电激子 量子线 束缚能 磁场