Localized optical vibrational modes in GaSb/AlSb superlattices

The vibrational spectrum of short-period GaSb/AlSb superlattices in the frequency range of GaSb optical phonons is investigated in detail. Localization of transverse GaSb optical phonons in GaSb/AlSb superlattices is observed experimentally for the first time. The dispersions of TO and LO phonons in GaSb are measured. Pis’ma Zh. éksp. Teor. Fiz. 64, No. 5, 361–364 (10 September 1996)     

Contribution of nonequilibrium optical phonons to the Peltier and Seebeck effects in polar semiconductors

Additive contributions to the Seebeck and Peltier coefficients made by nonequilibrium longitudinal optical phonons have been calculated. The results obtained are valid for any temperature and applicable to polar nondegenerate semiconductors with low carrier concentrations. The calculated components of the thermoelectric coefficients are exponentially small in the low-temperature domain and reach a maximum at k _BT∼ħω ₀. In materials with a large carrier mass and strong electron-phonon coupling the contribution of optical phonons to the Seebeck coefficient can exceed 1 mV/K. Fiz. Tverd. Tela (St. Petersburg) 40, 1209–1215 (July 1998)     

Observation of LO-phonon localization in GaAs quantum wires on faceted (311)A surfaces

The localization of longitudinal optical phonons in GaAs/AlAs lateral superlattices and quantum wires grown on faceted GaAs (311)A surfaces are investigated by means of Raman scattering spectroscopy. The frequencies of the localized phonons are found to decrease as the average thickness of the GaAs layer is decreased from 21 to 15 Å. As the GaAs thickness is decreased further to 11.3 and 8.5 Å, the frequencies of the localized phonons increases sharply in connection with the formation of an array of quantum wires. The frequencies calculated in a two-dimensional chain model agree with the experimental values. This makes it possible to interpret the increase in the frequencies of localized phonon states as being the result of the quantization of phonons in the array of one-dimensional objects. The results obtained support the model of GaAs (311)A surface faceting with a facet height of 10.2 Å. Pis’ma Zh. éksp. Teor. Fiz. 63, No. 12, 942–946 (25 June 1996)     

Optical detection of the absorption of acoustical phonons by a two-dimensional electron gas in a magnetic field

The effect of absorption of nonequilibrium acoustical phonons on the intensity of recombination of a two-dimensional electron gas in a magnetic field is investigated. The nonequilibrium acoustical phonons are emitted in the relaxation of electrons in a tunnel junction deposited on the back side of a sample with a two-dimensional electronic channel. It is demonstrated that the optical signal showing the intensity of the recombination of nonequilibrium electrons from a photoexcited size-quantization subband can serve as a sensitive detector of acoustical phonons. Because the general heating of two-dimensional carriers and the intersubband transitions stimulated by the absorption of nonequilibrium acoustical phonons lead to effects of different sign, the useful signal can be discriminated unambiguously. Pis’ma Zh. éksp. Teor. Fiz. 69, No. 1, 30–35 (10 January 1999)     

Direct measurements of energy relaxation times on an AlGaAs/GaAs heterointerface in the range 4.2–50 K

The temperature dependence of the energy relaxation time τ_e (T) of a two-dimensional electron gas at an AlGaAs/GaAs heterointerface is measured under quasiequilibrium conditions in the region of the transition from scattering by acoustic phonons to scattering with the participation of optical phonons. The temperature interval of constant τ_e, where scattering by the deformation potential predominates, is determined. In the preceding, low-temperature region, where piezoacoustic and deformation-potential-induced scattering processes coexist, τ _e decreases slowly with increasing temperature. Optical phonons start to participate in the scattering processes at T∼25 K (the characteristic phonon lifetime was equal to τ_LOτ4.5 ps). The energy losses calculated from the τ_e data in a model with an effective nonequilibrium electron temperature agree with the published data obtained under strong heating conditions. Pis’ma Zh. éksp. Teor. Fiz. 64, No. 5, 371–375 (10 September 1996)     

Raman scattering of light by optical phonons in Si-Ge-Si structures with quantum dots

Raman scattering of light by optical phonons in Si-Ge-Si structures with pseudomorphic germanium quantum dots has been investigated. Resonance amplification of the scattering intensity on E ₀ (Γ₇−Γ₈) transitions has been observed. It is shown that as a result of the formation of the layer of germanium quantum dots, the resonance energy is ∼0.3 eV higher than in the two-dimensional case. Pis’ma Zh. éksp. Teor. Fiz. 64, No. 3, 203–207 (10 August 1996)     

Thermoelectric power in quasi-two-dimensional systems with scattering of current carriers by phonons

The thermopower α in electron systems with a quasi-two-dimensional energy spectrum is investigated in the relaxation-time tensor approximation. The longitudinal and transverse components of the thermopower are calculated for scattering of the current carriers by different types of phonons. It is shown that the anisotropy of the thermopower in such systems is substantial. The dependence of a on the ratio of the Fermi level ɛ _F to the half-width ɛ ₀ of the one-dimensional conduction band is considered. For scattering by acoustical and nonpolar optical phonons, the thermopower changes sign: α becomes positive for ɛ _F<ɛ ₀. Comparison of the theory with published experimental data demonstrates good qualitative agreement. Fiz. Tverd. Tela (St. Petersburg) 39, 1857–1858 (October 1997)     

Resonant Mandelstam-Brillouin light scattering and Raman scattering in semiconductors with intermediate exciton states belonging to discrete exciton bands and the continuous spectrum

The results of a theoretical and experimental investigation of resonant Mandelstam-Brillouin light scattering by thermal acoustic phonons with k=0 near the direct absorption edge (in the case of ZnSe crystals) are analyzed. The appearance of a new type of resonant increase in the intensity of Raman scattering by optical phonons with k≠0, which corresponds to resonance with the scattered light in the output channel, near the indirect absorption edge (in the case of semi-insulating GaP:N crystals) is also reported. The resonant gain reaches ∼4×10³ at frequencies corresponding to overtone scattering assisted by LO(X) and LO(L) phonons. Exciton states belonging to both discrete exciton bands and to the continuous spectrum are considered as the intermediate states involved in the scattering processes in calculations of the resonant scattering tensors. In addition, all the intraband transitions, as well as the interband transitions between the conduction band, the valence bands, and the spin-orbit split-off band are taken into account, and good agreement with the experimental results is obtained. Fiz. Tverd. Tela (St. Petersburg) 40, 938–940 (May 1998)     

Terahertz emission from square wells in a longitudinal electric field

Terahertz emission accompanying heating of two-dimensional electrons by a strong electric field applied along size-quantized GaAs/AlGaAs layers is observed and investigated. The emission is due to indirect optical transitions of hot electrons in the bottom size-quantization band. The experimentally obtained emission spectra are compared with the spectra calculated taking into account scattering of electrons by optical phonons, impurities, and interfacial roughness and electron-electron scattering. Satisfactory agreement is obtained. The temperature of the hot electrons is determined from a comparison of the spectra. Pis’ma Zh. éksp. Teor. Fiz. 67, No. 7, 507–511 (10 April 1998)     

Interaction of optical phonons with anisotropic imperfections

Inelastic (Raman) light scattering by phonons interacting with anisotropic imperfections is investigated. Three different kind of disorder-induced defects (point, linear and planar) have been considered. The optical phonon width and line shape are found to depend importantly on the dimension of the imperfections. There is a close correspondence between the scale of the imperfection and the phonon line shape observed in the Raman scattering experiments. The dependence of the phonon frequency shift and width on the defect concentrations is calculated, and the critical concentrations at which the optical phonon can no longer be observed are determined. Pis’ma Zh. éksp. Teor. Fiz. 66, No. 12, 817–822 (25 December 1997) Published in English in the original Russian journal. Edited by Steve Torstveit.     

New method for detection of exciton Bose condensation using stimulated two-photon emission

An investigation is reported of stimulated two-photon emission by Bose-condensed excitons accompanied by a coherent two-exciton recombination, i.e., by simultaneous recombination of two excitons with opposite momenta leaving unchanged the occupation numbers of exciton states with momenta p≠0. Raman light scattering (RLS) accompanied by a similar two-exciton recombination (or production of two excitons) is also analyzed. The processes under consideration can occur only if a system contains Bose condensate, so their detection can be used as a new method to reveal Bose condensation of excitons. The recoil momentum, which corresponds to a change in the momentum of the electromagnetic field in the processes, is transferred to phonons or impurities. If the recoil momentum is transmitted to optical phonons with frequency ω ₀ ^s , whose occupation numbers are negligible, and the incident light frequency satisfies ω<2Ω, where Ω_=Ω−ω ₀ ^s is the difference frequency and Ω is the light frequency corresponding to the recombination of an exciton with zero momentum, stimulated two-photon emission and RLS with coherent two-exciton recombination give rise to a line at 2Ω_ −ω and an anti-Stokes component at ω+2Ω_, respectively. For ω2Ω_ the RLS spectrum contains Stokes and anti-Stokes components at frequencies ω±2Ω_, whereas stimulated two-photon emission is impossible. Formulas for the cross sections at finite temperatures are obtained for the processes under consideration. Our estimates indicate that a spectral line at 2Ω_−ω, corresponding to the stimulated two-photon emission accompanied by coherent optical phonon-assisted two-exciton recombination can be experimentally detected in Cu₂O. Zh. éksp. Teor. Fiz. 115, 1353–1376 (April 1999)     

Optical phonons in quantum-wire structures

The optical vibrational modes in GaAs/AlAs structures grown on a (311)A-oriented GaAs surface are investigated. It is found that the line corresponding to the fundamental TO vibrational mode localized in a GaAs quantum wire is split into two lines with different directions of the polarization vector. The dispersion of the TO phonons of GaAs in the (311) direction is determined from the IR spectra of periodic structures. Pis’ma Zh. éksp. Teor. Fiz. 67, No. 2, 107–110 (25 January 1998)     

A hybrid-phonon resonance in a quasi-two-dimensional nanostructure

The coefficient of absorption of electromagnetic radiation by a quasi-two-dimensional electron gas placed in an oblique magnetic field is found. The scattering of electrons by optical phonons is shown to lead to resonant absorption. The shape of the resonance peaks on the absorption curve is studied, and their doublet nature is demonstrated. Finally, the dependence of the resonance peaks on the angle between the magnetic field vector and the confinement plane is investigated. Zh. éksp. Teor. Fiz. 111, 1092–1106 (March 1997)     

Spatial correlation of an electron and hole in quasi-two-dimensional electronic system in a strong magnetic field and its relationship to the light-scattering tensor

The spatial correlation of light-generated electrons and holes in a quasi-two-dimensional electron gas in a strong magnetic field is investigated in an approximation linear in the intensity of the exciting light. The correlation is due to the interaction of the electrons and holes with longitudinal optical (LO) phonons. The theory permits calculating, on the basis of a special diagrammatic technique, two distribution functions of an electron-hole pair with respect to the distance between the electron and the hole after the emission of N phonons: first, the function determining the total number of pairs which have emitted N phonons and, second, the function related to the rank-4 light-scattering tensor in interband resonance Raman scattering of light. A special feature of the system is that the electron and hole energy levels are discrete. The calculation is performed for a square quantum well with infinitely high barriers. The distribution function and the total number of electron-hole pairs before the emission of phonons as well as the distribution function corresponding to two-phonon resonance Raman scattering are calculated. The theory predicts the appearance of several close-lying peaks in the excitation spectrum under resonance conditions. The number of peaks is related to the number of the Landau level participating in the optical transition. The distance between peaks is determined by the electron-phonon coupling constant. Far from resonance there is one peak, which is much weaker than the peaks obtained under resonance conditions. Zh. éksp. Teor. Fiz. 111, 2194–2214 (June 1997)     

Influence of the degree of disorder of amorphous solids on the intensity of light scattering by acoustic phonons

It is observed experimentally that in the low-frequency Raman light scattering spectrum of amorphous porous silicon the boson peak situated in the acoustic range is more sensitive to the structural order than the optical mode presently used to determine the degree of disorder. It is shown that this is because, unlike the coefficient of interaction with optical vibrations, the coefficient of interaction between light and acoustic vibrations contains an additional factor, the square of the reciprocal correlation length of the vibrational excitations, i.e., the intensity of light scattering by acoustic phonons has an additional dependence on the degree of disorder. Zh. éksp. Teor. Fiz. 114, 315–321 (July 1998)     

Observation of coupled 4f-electron-phonon excitations in the Van Vleck paramagnet TmES in high magnetic fields

A model is proposed for explaining the anomalous behavior of the far-IR absorption spectra of the dielectric Van Vleck paramagnet thulium ethyl sulfate TmES. The good agreement obtained between the calculations and experiment on the basis of the idea of a resonance interaction between Tm³⁺ ions in one of the excited doublet states and optical phonons gives grounds for asserting that coupled 4f-electron-phonon excitations exist in TmES single crystals in high magnetic fields at liquid-helium temperatures. Pis’ma Zh. éksp. Teor. Fiz. 67, No. 12, 983–987 (25 June 1998)     

Localized optical phonons in GaAs/AlAs superlattices grown on (311)A and (311)B surfaces

A study is reported of optical vibrational modes in [311]-grown GaAs/AlAs superlattices. An analysis of the TO and LO localized modes observed in IR reflectance spectra showed that the difference between the TO and LO mode frequencies in superlattices grown on (311)A and (311)B surfaces is due to the different localization lengths of these modes. The dispersion of transverse optical phonons in GaAs derived from IR reflectance spectra is in a good agreement with Raman scattering data. Fiz. Tverd. Tela (St. Petersburg) 40, 550–552 (March 1998)     

Intraband population inversion and amplification of IR radiation through charge-carrier injection into quantum wells and quantum dots

A mechanism is proposed for obtaining intraband population inversion of electrons in size-quantization levels through the injection of electron-hole pairs into the i region of a heterostructure with quantum wells or quantum dots. Key elements of the mechanism are the simultaneous generation of interband (hv≈E _g ) near-IR radiation and the presence of a “metastable” level. In quantum wells such a level can be produced by making use of the weak overlap of the wave functions of electrons in the levels of a quantum well of complicated configuration and exploiting the characteristic features of the interaction of electrons with optical phonons in polar semiconductors. In quantum dots such a level forms as a result of the phonon bottleneck effect. Estimates are made of the gain for mid-IR radiation in intraband optical transitions of electrons. Pis’ma Zh. éksp. Teor. Fiz. 68, No. 5, 392–399 (10 September 1998)     

Optical phonon spectrum of germanium quantum dots

We have observed additional lines, shifted in both directions relative to the frequency of the bulk phonon of Ge, in the Raman scattering spectra from optical phonons in germanium quantum dots. The observed phonon modes are shown to be due to the straining of the quantum dots as a result of the lattice mismatch of the Ge and Si matrices. The observed frequency shifts, with allowance for optical-phonon localization effects, make it possible to determine the sizes of the regions with different strain states in the quantum dots. Pis’ma Zh. éksp. Teor. Fiz. 70, No. 4, 279–283 (25 August 1999)     

The peculiarities of the tunneling conductance and phonon induced features in tetrahedrically bonded semiconductors under pressure

Abstract

Summary The 30 kbar high pressure unit for low temperatures and the digital processing have been applied to the tunneling investigations of Ge and GaAs. The obtained results include the values of the mode Gruneisen constants for zone boundary phonons in <100> direction in Ge, the irregular optical phonons behavior in GaAs, the bistability of tunneling voltage-current curve for GaAs at elevated pressure and the observation of optically induced oscillations on the tunneling conductance of GaAs Schottky barrier. The semi-quantitative model involving the conductance band structure change under pressure and DX-centers in GaAs(Te) is used for the tentative explanation.