Interplay between Coulomb interaction and quantum-confined Stark-effect in polar and nonpolar wurtzite InN/GaN quantum dots

In this paper we systematically analyze the electronic structures of polar and nonpolar wurtzite-InN/GaN quantum dots and their modification due to the quantum-confined Stark effect caused by intrinsic fields. This is achieved by combining continuum elasticity theory with an effective-bond orbital model to describe the elastic and single-particle electronic properties in these nitride systems. Based on these results, a many-body treatment is used to determine optical absorption spectra. The efficiency of optical transitions depends on the interplay between the Coulomb interaction and the quantum-confined Stark effect. We introduce an effective confinement potential which represents the electronic structure under the influence of the intrinsic polarization fields and calculate the needed strength of Coulomb interaction to diminish the separation of electrons and holes.     

A Theoretic Approach to SU(4) Kondo Effect in Carbon Nanotube Quantum Dots

We propose a mean field approach to the transport properties of carbon nanotube quantum dots. Quantum interaction between spin and orbital pseudo-spin degrees of freedom results in an SU(4) Kondo effect at low temperatures. By calculating the chemical potentials and the tunnelling strengths, and hence the spectral functions for different coupling constants and applied magnetic fields, we find that this exotic Kondo effect manifests as a four-peak splitting in the non-linear conductance when an axial magnetic field is applied.     

Ferromagnetism in diluted magnetic semiconductor quantum dot arrays embedded in semiconductors

We present an Anderson-type model Hamiltonian with exchange coupling between the localized spins and the confined holes in the quantum dots to study the ferromagnetism in diluted magnetic semiconductor (DMS) quantum dot arrays embedded in semiconductors. The hybridization between the quantum-confined holes in the quantum dots and the itinerant holes in the semiconductor valence band makes possible hole transfer between the DMS quantum dots, which can induce the long range ferromagnetic order of the localized spins. In addition, it makes the carrier spins both in the quantum dots and in the semiconductors polarized. The spontaneous magnetization of the localized spins and the spin polarization of the holes are calculated using both the Weiss mean field approximation and the self-consistent spin wave approximation, which are developed for the present model.Received: 17 Mars 2003, Published online: 30 January 2004PACS: 75.75. + a Magnetic properties of nanostructures - 75.30.Ds Spin waves - 75.50.Dd Nonmetallic ferromagnetic materials - 75.50.Pp Magnetic semiconductors     

Two interacting spins in external fields and application to quantum computation

We study the four-level-system given by two quantum dots immersed in a time-dependent magnetic field, which are coupled to each other by an effective Heisenberg-type interaction. We describe the construction of the corresponding evolution operator in a special case of different time-dependent parallel external magnetic fields. We find a relation between the external field and the effective interaction function. The obtained results are used to analyze the theoretical implementation of a universal quantum gate.     

外场调控下硼磷烯量子点的电子结构和光学性质研究

采用紧束缚近似方法对锯齿状六边形硼磷烯量子点在平面电场和垂直磁场调控下的电子结构和光学性质进行了研究. 研究表明,硼磷烯量子点作为直接带隙半导体,在无外加电场和磁场作用时,能隙不随尺寸的改变而变化. 在平面电场调控下,能隙随电场强度的增加逐渐减小直至消失,平面电场方向几乎不会对硼磷烯量子点体系产生影响, 且随量子点尺寸的增大,能隙消失所需电场强度逐渐减小. 在垂直磁场调控下,表现为体态的能级在磁场作用下形成朗道能级,而能隙边缘处的朗道能级近似为一个平带,不随磁通量的改变而变化,态密度主要分布于朗道能级处. 另外,垂直磁场作用下的光吸收主要是由朗道能级之间的跃迁引起的.     

Magnetic field and symmetry effects in small quantum dots

Shell phenomena in small quantum dots with a few electrons under a perpendicular magnetic field are discussed within a simple model. It is shown that various kinds of shell structures, which occur at specific values for the magnetic field lead to a disappearance of the orbital magnetization for particular magic numbers for noninteracting electrons in small quantum dots. Including the Coulomb interaction between two electrons, we found that the magnetic field gives rise to dynamical symmetries of a three-dimensional axially symmetric two-electron quantum dot with a parabolic confinement. These symmetries manifest themselves as near-degeneracy in the quantum spectrum at specific values of the magnetic field and are robust at any strength of the electron-electron interaction. A remarkable agreement between experimental data and calculations exhibits the important role of the thickness for the two-electron quantum dot for analysis of ground state transitions in a perpendicular magnetic field. The text was submitted by the author in English.     

Analyses of crystal field and exchange interaction of Dy3Ga5O12 under extreme conditions

This paper theoretically investigates the effects of crystal field and exchange interaction field on magnetic properties in dysprosium gallium garnet under extreme conditions (low temperatures and high magnetic fields) based on quantum theory. Here, five sets of crystal field parameters are discussed and compared. It demonstrates that, only considering the crystal field effect, the experiments can not be successfully explained. Thus, referring to the molecular field theory, an effective exchange field associated with the Dy--Dy exchange interaction is further taken into account. Under special consideration of crystal field and the exchange interaction field, it obtains an excellent agreement between the theoretical results and experiments, and further confirms that the exchange interaction field between rare-earth ions has great importance to magnetic properties in paramagnetic rare-earth gallium garnets.     

点缺陷扶手型石墨烯量子点的电子性质研究

基于有限差分方法, 数值求解了Dirac方程, 研究了垂直磁场下的点缺陷扶手型 石墨烯 量子点的能谱结构, 分析了尺寸大小对带隙的影响. 与无磁场时具有一定带隙 (带隙的大小与半径成反比) 的量子点相比, 在外加有限磁场下, 能谱中出现朗道能级, 最低朗道能级能量为零并与磁场强度无关, 并且朗道能级的简并度随着磁场的增加而增加. 进一步的计算表明, 最低朗道能级的简并度与磁场成线性关系, 与半径的平方成线性关系. 本文工作对基于石墨烯量子点的器件设计具有一定的指导意义.     

Thermopower in parallel double quantum dots with Rashba spin-orbit interaction

Based on the Green’s function technique and the equation of motion approach,this paper theoretically studies the thermoelectric effect in parallel coupled double quantum dots (DQDs),in which Rashba spin-orbit interaction is taken into account.Rashba spin-orbit interaction contributions,even in a magnetic field,are exhibited obviously in the double quantum dots system for the thermoelectric effect.The periodic oscillation of thermopower can be controlled by tunning the Rashba spin-orbit interaction induced phase.The interesting spin-dependent thermoelectric effects will arise which has important influence on thermoelectric properties of the studied system.     

Excitons and magnetoexcitons in coupled quantum nanostructures: the role of a dirty environment

The effect of a random field caused by impurities, interface roughness and so on, on the optical properties and superfluidity of a quasi-two-dimensional system of excitons is studied. The influence of a random field on the density of the superfluid component of excitonic systems at low temperatures is investigated. For quasi-two-dimensional excitonic systems in a random field the Kosterlitz–Thouless temperature in the superfluid state is calculated. The superfluidity and Bose–Einstein condensation of indirect excitons in coupled quantum dots are studied. Magnetoexciton light absorption in the disordered quantum wells is considered. The two-particle problem of the magnetoexciton motion in the external field depending on the external magnetic field is reduced to the one-particle motion with effective magnetic mass in some effective field. The energy and optical absorption of the magnetoexciton in a single and coupled quantum dots are studied using the effective-magnetic-mass Hamiltonian. In the coherent potential approximation the coefficient of magnetoexciton optical absorption in single and coupled quantum wells is calculated. In the strong magnetic fields the exciton peak decreases with magnetic field increasing in accordance with the experimental data. The localization of direct and indirect magnetoexcitons is investigated. Received: 14 April 2000 / Accepted: 17 April 2000 / Published online: 6 September 2000     

Off—Center D—Centers in a Quantum Dot in the Presence of a Perpendicular Magnetic Fields

We investigate the effect of the position of the donor in quantum dots on the energy spectrum in the presence of a perpendicular magnetic field by using the method of few-body physics,As a function of the magnetic field,we find,when D^- centers are placed sufficiently off-center,discontinuous ground-state transitions which are similar to those found in many-electron parabolic quantum dots.Series of magic numbers of angular momentum which minimize the ground-state electron-electron interaction energy have been discovered.The dependence of the binding energy of the gound-state of the D^- center on the dot radius for a few values of the magnetic field strength is obtained and compared with other results.     

Electron–Nuclear Spin Dynamics in Semiconductor QDs

This work presents an overview of investigations of the nuclear spin dynamics in nanostructures with negatively charged InGaAs/GaAs quantum dots characterized by strong quadrupole splitting of nuclear spin sublevels. The main method of the investigations is the experimental measurements and the theoretical analysis of the photoluminescence polarization as a function of the transverse magnetic field (effect Hanle). The dependence of the Hanle curve profile on the temporal protocol of optical excitation is examined. Experimental data are analyzed using an original approach based on separate consideration of behavior of the longitudinal and transverse components of the nuclear polarization. The rise and decay times of each component of the nuclear polarization and their dependence on transverse magnetic field strength are determined. To study the role of the Knight field in the dynamic of nuclear polarization, a weak additional magnetic field parallel to the optical axis is used. We have found that, only taking into account the nuclear spin fluctuations, we can accurately describe the measured Hanle curves and evaluate the parameters of the electron–nuclear spin system in the studied quantum dots. A new effect of the resonant optical pumping of nuclear spin polarization in an ensemble of the singly charged (In,Ga)As/GaAs quantum dots subjected to a transverse magnetic field is discussed. Nuclear spin resonances for all isotopes in the quantum dots are detected in that way. In particular, transitions between the states split off from the ±1/2 doublets by the nuclear quadrupole interaction are identified.     

抛物量子点中弱耦合磁极化子的振动频率和相互作用能

采用改进的线性组合算符和幺正变换方法研究磁场中抛物量子点弱耦合磁极化子的性质,导出抛物量子点中磁极化子的振动频率和相互作用能与磁场、受限强度和电子声子耦合强度的关系.对GaAs晶体进行数值计算,结果表明,量子点受限强度越大,量子点弱耦合磁极化子的振动频率和相互作用能越大.     

Magnetic-field-induced singularity in the tunneling current through an InAs quantum dot

The tunneling transport through a GaAs/(AlGa)As/GaAs single-barrier heterostructure with self-assembled InAs quantum dots is studied experimentally at low temperatures. An anomalous increase in the tunneling current through the quantum dots is observed in magnetic fields both parallel and perpendicular to the current. This result cannot be understood in the framework of the single-electron approximation. The proposed explanation of the phenomenon is based on the modified Matveev-Larkin theory, which predicts the appearance of a singularity in the tunneling current through the zero-dimensional state in a magnetic field because of the interaction between the tunneling electron and the spin-polarized three-dimensional electron gas in the emitter. The absence of spin splitting in the experimental resonance peaks is caused by the complete spin polarization of the emitter in relatively weak magnetic fields.     

Evidence of magnetic field quenching of phosphorous-doped silicon quantum dots

We present data on the electrical transport properties of highly-doped silicon-on-insulator quantum dots under the effect of pulsed magnetic fields up to 48 T. At low field intensities, B < 7 T, we observe a strong modification of the conductance due to the destruction of weak localization whereas at higher fields, where the magnetic field length becomes comparable to the effective Bohr radius of phosphorous in silicon, a strong decrease in conductance is demonstrated. Data in the high and low electric field bias regimes are then compared to show that close to the Coulomb blockade edge magnetically-induced quenching to single donors in the quantum dot is achieved at about 40 T.     

抛物量子点中强耦合磁极化子的性质

采用Pekar类型的变分方法研究了抛物量子点中强耦合磁极化子的基态和激发态的性质。计算了基态和激发态磁极化子的束缚能以及磁极化子的共振频率。讨论了这些量对回旋频率和有效限制强度的依赖关系,以及磁极化子光学声子平均数的性质,结果表明:由于Zeeman劈裂,抛物量子点中磁极化子的回旋共振频率劈裂为两支。基态和激发态磁极化子的束缚能以及磁极化子的共振频率都随回旋频率的增加而增大,随量子点的有效束缚强度的增大而减小。     

串型耦合双量子点处于自旋阻塞区时磁输运性质的研究

使用双杂质安德森模型的哈密顿量,从理论上研究了串型耦合双量子点系统处于自旋阻塞区时的磁输运性质,并用主方程近似方法求解了哈密顿量.结果表明,自旋轨道耦合作用导致的双量子点间的自旋反转隧穿能够解除系统的自旋阻塞.同时也研究了超精细相互作用导致的在量子点内自旋反转和双量子点之间的自旋关联对系统的磁输运性质的影响,取得了一些有价值的结果,并对相关的物理问题进行了讨论.     

Electronic transport through a Majorana bound state coupled to a T-shaped quantum-dot system with Coulomb interaction

Using the Green’s function technique, we respectively investigate the electron transport properties of two spin components through the system of a T-shaped double quantum dot structure coupled to a Majorana bound state, in which only one quantum dot is connected with two metallic leads. We explore the interplay between the Fano effect and the MBSs for different dot-MBS coupling strength λ, dot-dot coupling strength t, and MBS-MBS coupling strength ε_M in the noninteracting case. Then the Coulomb interaction and magnetic field effect on the conductance spectra are investigated. Our results indicate that G_↓(ω) is not affected by the Majorana bound states, but a “0.5” conductance signature occurs in the vicinities of Fermi level of G_↑(ω). This robust property persists for a wide range of dot-dot coupling strength and dot-MBS coupling strength, but it can be destroyed by Coulomb interaction in quantum dots. By adjusting the size and direction of magnetic field around the quantum dots, the “0.5” conductance signature damaged by U can be restored. At last, the spin magnetic moments of two dots by applying external magnetic field are also predicted.     

Magnetotransport properties of graphene layers decorated with colloid quantum dots

The hybrid graphene-quantum dot devices can potentially be used to tailor the electronic, optical, and chemical properties of graphene. Here, the low temperature electronic transport properties of bilayer graphene decorated with PbS colloid quantum dots(CQDs) have been investigated in the weak or strong magnetic fields. The presence of the CQDs introduces additional scattering potentials that alter the magnetotransport properties of the graphene layers, leading to the observation of a new set of magnetoconductance oscillations near zero magnetic field as well as the high-field quantum Hall regime.The results bring about a new strategy for exploring the quantum interference effects in two-dimensional materials which are sensitive to the surrounding electrostatic environment, and open up a new gateway for exploring the graphene sensing with quantum interference effects.     

Hopping conductivity and Coulomb correlations in 2D arrays of Ge/Si quantum dots

The temperature and magnetic-field dependences of the conductivity associated with hopping transport of holes over a 2D array of Ge/Si(001) quantum dots with various filling factors are studied experimentally. A transition from the Éfros-Shklovski? law for the temperature dependence of hopping conductivity to the Arrhenius law with an activation energy equal to 1.0–1.2 meV is observed upon a decrease in temperature. The activation energy for the low-temperature conductivity increases with the magnetic field and attains saturation in fields exceeding 4 T. It is found that the magnetoresistance in layers of quantum dots is essentially anisotropic: the conductivity decreases in an increasing magnetic field oriented perpendicularly to a quantum dot layer and increases in a magnetic field whose vector lies in the plane of the sample. The absolute values of magnetoresistance for transverse and longitudinal field orientations differ by two orders of magnitude. The experimental results are interpreted using the model of many-particle correlations of holes localized in quantum dots, which lead to the formation of electron polarons in a 2D disordered system.