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利用电化学扫描隧道显微镜(ECSTM)在温和的电化学和隧道偏压的条件下诱导电极表面发生特定的局域电化学反应, 在Au(111)单晶电极表面构筑了Pd纳米粒子的阵列. 研究了两种不同的溶液体系(PdCl2和PdSO4)构筑纳米粒子所需设定的不同参数, 同时探讨了选择不同参数的原因.  相似文献   

3.
扫描探针显微术在巯醇自组装单分子膜纳米刻蚀中的应用   总被引:1,自引:0,他引:1  
介绍了近十年来扫描探针显微术(SPM)在巯醇自组装单分子膜纳米刻蚀中的应用. 依据扫描探针的工作原理, 依次讨论了扫描隧道显微镜、原子力显微镜和导电原子力显微镜的工作特点和适用范围. 同时也讨论了自组装单分子膜纳米刻蚀术在生物分子传感器、超高密度信息存储等领域的应用前景.  相似文献   

4.
适用于针尖增强拉曼技术的Au针尖的研制   总被引:1,自引:0,他引:1  
采用针尖增强拉曼光谱技术(TERS)研究了刻蚀电位对Au针尖刻蚀效果的影响, 初步探讨了刻蚀过程的机理. 通过监控刻蚀过程中的振荡电流-时间曲线并与扫描电镜得到的结果比较, 发现可以直接利用电流-时间曲线简单地判断刻蚀后针尖的可能形状, 而无需再借助扫描电镜进行表征. 这不但提高了实验效率, 而且还可以避免针尖在转移和电镜表征过程中可能引入的污染. 研究结果表明, 在体积比为1:1的发烟盐酸和无水乙醇的刻蚀液中, 于2.2 V的电压下, 结合电化学方法控制终点可以得到形状对称尖锐的针尖. 这种针尖不但适合于TERS研究, 而且可用作STM针尖和微纳电极并用于其它针尖增强光学技术.  相似文献   

5.
综述了近年来胶体刻蚀领域的研究进展, 分别讨论了基于胶体微粒和胶体晶体为模板的可控沉积与可控刻蚀及在固体平面基质、曲面基质和气液界面等不同基质上构筑结构化表面的方法. 同时还探讨了利用胶体刻蚀方法形成的微纳结构在光、电、磁以及表面润湿和生物学等方面的应用.  相似文献   

6.
纳米笔刻蚀技术构建小牛胸腺组蛋白纳米结构   总被引:1,自引:1,他引:0  
采用纳米笔刻蚀(DPN)技术控制针尖的运行,成功地将小牛胸腺组蛋白传递到新剥离的云母表面,获得了不同尺寸、形状的小牛胸腺组蛋白纳米结构,同时考察了针尖移动速率、针尖-基底接触时间对DPN技术的影响.结果表明,较快的针尖移动速率和较短的针尖-基底接触时间沉积较少的墨水分子,同时形成的纳米图案和墨水分子的本身性质也有关系.这种方法可以用于构建其他蛋白质分子,为生物纳米器件的合成提供更多机会,同时组蛋白纳米结构的构建也可以作为模板沉积其他分子,在蛋白质监测、生物传感器方面有着潜在的应用.  相似文献   

7.
扫描速率对硅表面分子沉积膜纳米摩擦特性的影响   总被引:2,自引:0,他引:2  
本研究小组曾简要报道过扫描速率对Au衬底表面分子沉积膜(MD)的纳米摩擦特性的影响[1],本文利用原子力显微镜(AFM)研究了硅表面、羟基化硅表面、氨丙基硅烷(aminopropylsilanized简称APS)化硅表面及硅衬底上磺化酞菁铜(CuT sPc)单层MD膜表面的摩擦力随针尖扫描速率变化的规律。1 实验方法1 1 仪器与试剂TMX2000型原子力显微镜(TopoMetrix公司)。甲苯、二甲苯、丙酮、无水乙醇、氯仿、浓硫酸、过氧化氢、浓盐酸(以上均为分析纯),3 氨丙基 三乙氧基硅烷(KH 550,ACROS产品),磺化酞菁铜(ALDRICH产品),去离子水(电阻率大于10…  相似文献   

8.
电沉积二氧化钛纳米微粒膜的光电化学性能和表面形貌研究   总被引:19,自引:1,他引:19  
采用光电流谱、透射光谱和扫描微探针显微镜技术对电沉积法制备的二氧化钛纳米微粒膜的光电化学性能和表面形貌进行了研究.结果表明,不同制备条件下的二氧化钛纳米微粒膜具有与紧密的半导体电极不同的光电化学性质,并探讨了其光电化学性能与表面形貌的关系.  相似文献   

9.
自从Canham首次报道了室温下多孔硅的光致发光现象以来[1],多孔硅已成为半导体光电化学及材料领域内最为热门的研究课题[2].  相似文献   

10.
王金刚  汤儆  陈招斌  毛秉伟 《电化学》2006,12(4):357-362
STM“Jump-to-contact”针尖诱导表面纳米构筑是目前水溶液中具有最高分辨率的一种表面纳米构筑技术.然而,一些金属因其具有较高的内聚能而难以发生针尖原子向表面的转移,限制了该技术的广泛应用.本文建立了以STM构筑-置换两步法获得不能直接利用“Jump-to-contact”原理进行构筑的金属表面纳米团簇阵列,利用STM针尖“Jump-to-contact”诱导在Au(111)表面构筑Cu纳米团簇阵列,然后通过Pt-Cu置换的方法,制备出Au(111)表面的Pt纳米团簇阵列.  相似文献   

11.
光诱导约束刻蚀可作为一种无应力的化学平坦化方法用于Cu的抛光。我们发现在光诱导约束刻蚀工件Cu的过程中,工具表面的TiO_2纳米管上可能出现Cu沉积。通过扫描电子显微镜及其能谱,X射线光电子能谱等方法分析其沉积形貌和成分组成,探究在工具-工件之间的微纳尺度液层中Cu光催化还原沉积的机制,并在模拟液中研究Cu沉积对刻蚀体系的影响。探究引入搅拌、加入络合剂对TiO_2纳米管表面Cu的沉积的抑制,并考察抑制措施对于工件Cu刻蚀的影响。结果表明Cu沉积会增强TiO_2纳米管光电极的光催化性能,但随着沉积量的增加,增强机制会发生变化;在尝试抑制Cu沉积时也发现改善传质以抑制Cu沉积的同时也会带来工件Cu的刻蚀增强;采用添加络合剂结合改善传质的方法有望在抑制Cu沉积的同时提高平坦化效果。所以抑制方法和条件的选择需兼顾对工具-工件之间微纳液层中的多个化学和传质过程的影响。这些研究对于进一步优化光诱导约束刻蚀体系及其在化学平坦化中的应用有重要的指导意义。  相似文献   

12.
应用循环伏安法和现场扫描隧道显微镜研究了在HClO4和H2SO4两种溶液中Sb于Cu(111)和Cu(100)电极上的欠电位沉积.结果表明,不同的表面原子排列和强吸附阴离子的存在将明显影响Sb的欠电位沉积行为.在结构较为开放的Cu(100)表面,Sb形成的欠电位沉积层结构也较为开放,并且伴随着表面合金的形成;而在密堆积的Cu(111)表面上,Sb形成了致密的单层结构.又当Cu(111)表面存在强吸附的SO42-时,Sb原子首先在SO42-吸附层与Cu表面交接的新台阶处成核,随后通过取代SO42-向上一层晶面发展,表现出独特的成核—生长行为;而在弱吸附的HClO4溶液中,Sb的欠电位沉积系以在晶面上随机形成一些单原子层高度的Sb岛为特征.在Cu(100)表面,通过SO42-的诱导共吸附,欠电位沉积的Sb原子形成了开放性更大的(4×4)结构,不同于在HClO4溶液中所形成的(22×22)R45°结构.  相似文献   

13.
Scanning tunneling Microscopy (STM) has been widely used as an in-situ technique in the studies of electrode process. However, the influence of tip should not be neglected.  相似文献   

14.
张茂峰  杨朝晖  丛海林  曹维孝 《化学学报》2004,62(21):2187-2190
组装于硅片或玻璃片基片上的重氮树脂(DR)单层膜,吸附SnCl2,Pd催化剂后,通过无电沉积的方法,在这些基片上制备了铜膜.对得到的铜膜进行了SEM,XRD表征.通过选择性无电沉积,成功地制备了铜膜图像.  相似文献   

15.
The surface electrochemistry of Cu(100) in 10 mM hydrobromic acid electrolyte has been studied by means of cyclic voltammetry and in situ STM. In the potential range between the onset of the anodic copper dissolution at positive and the hydrogen evolution at negative electrode potentials, the CV of Cu(100) in 10 mM HBr is characterized only by the double-layer charge. Within this potential regime a highly ordered (√2×√2)R45°-superstructure is seen in the STM experiments assigned to specifically adsorbed bromide anions. No desorption of the bromide adlayer has been found in these STM experiments even at extremely negative potentials at the onset of hydrogen evolution. Therefore the bromide desorption potential is concluded to lie within the potential regime of massive hydrogen evolution at even more negative potentials. Adsorbed bromide induces a drastic restructuring and faceting of the surface topography depending on the applied potential. The driving force of this process is the formation of thermodynamically favored copper steps aligned parallel to close packed 100 directions of the bromide adsorbate. Dynamic processes like copper dissolution and deposition are also strongly influenced by the geometry of the (√2×√2)R45° bromide adlayer. Corrosion as well as deposition of copper material follows the close packed 100 directions of the bromide adsorbate. For moderate reaction rates an additional anisotropy between the [001]- and [010]-direction is observed due to the nonequivalence of two different kinds of bromide stabilized copper steps. The origin of these two kinds of steps is the phase relation of close packed adsorbate rows of adjacent terraces. The deposition of copper material does not only start at the lower but unusually, also at the upper sites of step edges leading to the formation of microfacets. Not only the growth of monoatomically high islands is observed but also a double-layer and multilayer growth of copper.  相似文献   

16.
ICP刻蚀硅模板用于PDMS规则超疏水表面的制作   总被引:2,自引:0,他引:2  
张润香  张玉龙  林华水 《电化学》2007,13(3):264-268
在ICP(inductively coupled plasma)刻蚀后的硅模板上复制聚二甲基硅氧烷(PDMS),经剥离得到含有一定尺寸的规则微柱阵列疏水表面.实验表明,当微柱高度较小时,微柱高度和边长对接触角有正影响,而间距则呈负影响;但如微柱高度较大,则高度对接触角的影响趋小,而边长呈负影响.间距对接触角的影响表现复杂.微柱间距6μm,边长14μm和高14μm微柱阵列的PDMS表面,静态接触角最大,约151°.  相似文献   

17.
In this work, we present a novel etching method to fabricate the superhydrophobic Al surfaces in a salt solution. Hierarchical rough structures composed of micrometer-scale pits, protrusions, and rectangle plateaus and nanometer-scale step-like structures are formed on the Al surfaces by the self-assembled primary cell assisted etching and the preferential corrosion of grain boundaries and dislocations. After fluoroalkylsilane modification, the superhydrophobic Al surfaces with a 166.4° water contact angle and a 1° rolling angle are obtained. The developed method does not use any strong acids and has a smaller harm to the environment and operators.  相似文献   

18.
Currently, a conventional two-step method has been used to generate black silicon (BS) surfaces on silicon substrates for solar cell manufacturing. However, the performances of the solar cell made with such surface generation method are poor, because of the high surface recombination caused by deep etching in the conventional surface generation method for BS. In this work, a modified wet chemical etching solution with additives was developed. A homogeneous BS layer with random porous structure was obtained from the modified solution in only one step at room temperature. The BS layer had low reflectivity and shallow etching depth. The additive in the etch solution performs the function of pH-modulation. After 16-min etching, the etching depth in the samples was approximately 200 nm, and the spectrum-weighted-reflectivity in the range from 300 nm to 1200 nm was below 5%. BS solar cells were fabricated in the production line. The decreased etching depth can improve the electrical performance of solar cells because of the decrease in surface recombination. An efficiency of 15.63% for the modified etching BS solar cells was achieved on a large area, p-type single crystalline silicon substrate with a 624.32-mV open circuit voltage and a 77.88% fill factor.  相似文献   

19.
C60的聚合反应是近年来C60研究的热点.Yeretzian等[1]首先在质谱中观察到了C60在激光作用下的聚合反应,我们也曾以激光真空溅射技术制备了丰富的C60与C70的聚合物[2].进一步研究还发现,C60在紫外光照射下也能聚合成膜[3].为更深入地了解C60的聚合过程,本文以扫描隧道显微(STM)技术跟踪观察了C60在紫外光辐射下所发生的形态变化.1实验部分C60吸附在Au(111)面上时能够铺展成单分子层[4].因此,我们选择Au(111)面作基底,将C60配成一定浓度的甲苯溶液滴在金表面上,待甲苯挥发后制得C60的单分子层.实验所用的紫外光源为…  相似文献   

20.
Simply sublime! Samples of monomeric and dimeric zinc porphyrins were sublimed onto a Cu surface under ultrahigh vacuum conditions. Images obtained by scanning tunneling microscopy at room and low temperature (98 K) show features attributed to individual porphyrin molecules with excellent resolution. In the case of the (relatively large) linear dimer shown, two distinct conformations were detected on a surface with low coverage area. R=CH2CH2COOCH3.  相似文献   

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