用X—射线光电子能谱对钇的配位化合物价态的研究

二价的配合物3p能级分裂间距大于三价Y的化合物,二价Y的4s多重分裂也是鉴别Y的价态指纹。     

X射线光电子能谱中的分峰处理

文章详细介绍了X射线光电子能谱分峰操作的流程,对谱图中单峰和多峰的荷电位移、数据平滑、背景扣除、谱峰确认和多高斯拟合操作的数学流程进行了图解。我们认为,具有足够连续宽度和强度的峰值处才可以被判定为峰;谱图中可以进行含量定量的谱峰强度应在背景涨落的10倍以上;最后得到的分峰结果,还应进行统计检验。     

有机锗化合物的光电子能谱研究

用Ｘ射线光电子能谱法（ＸＰＳ）研究了六种有机锗化合物的Ｇｅ３ｄ轨道结合能化学位移与锗所处不同化学环境的关系。结果表明，对Ｇｅ３ｄ轨道电子能化学位移有明显影响的关键取决于极性基团。     

氩离子刻蚀还原氧化铜的XPS研究

利用X射线光电子能谱(XPS)及氩离子刻蚀技术,通过改变氩离子枪的刻蚀模式,原位研究氩离子刻蚀对氧化铜的还原情况。结果发现在极其微弱的氩离子束流轰击下,CuO即被还原,刻蚀初期变化较大,之后达到稳恒状态。对Cu2p峰拟合,同时结合俄歇CuLMM峰变化,判定纯CuO经氩离子刻蚀后最终转变为氧化铜、氧化亚铜及少量单质铜的共存状态。研究结果将对氧化铜深度剖析中化学状态的判断具有重要参考价值。     

CeO_2 X射线光电子能谱的电荷补偿分析

本文以二氧化铈粉末为研究对象,探讨了不同的电子中和枪条件对光电子能谱数据采集结果的影响.通过与用双阳极Mg靶测试得到的结果比较,确立了用单色器测量电子能谱时比较可靠的中和条件.     

Probing the Cellulose-Ionic Liquids Interaction by X-ray Photoelectron Spectroscopy

X-ray photoelectron spectroscopy is used as a probe to demonstrate the interaction between cellulose and 1-butyl-3-methylimidazolium chloride. The fitting models of C 1s spectra for the ionic liquid, cellulose and cellulose containing solutions are developed. The measured binding energy of C² 1s component is used to indicate the ionic liquid-cellulose interaction. In the case of the cellulose containing solution, due to the weaker charge-transfer effect between hydrophilic groups of cellulose and the imidazolium cation, the C² atom is in a more electropositive environment and thus exhibits higher binding energy.     

双钙钛矿Pr2NiMnO6的X射线光电子能谱研究

利用固相反应法合成了双钙钛矿Pr2NiMnO6.通过X射线衍射确定了样品物相的单一性.利用X射线光电子能谱和磁性测量系统分别对Ni、Mn的价态以及样品的低温磁性质进行分析.结果表明,在Pr2NiMnO6中,Ni、Mn主要以2价、4价的形式存在,低温下的铁磁行为来源于Ni2+-O-Mn4+铁磁超交换作用.该研究为探索同系双钙钛矿La2 NiMnO6的磁性起源提供了重要参考.     

RE—Al—Zr—C—N多元渗的XPS研究

用气相法对45钢表面进行RE－Al-Zr-C-N多元渗，通过X射线光电子能谱（XPS）给出了该体系中各元素的结合能位置，分析了它们的存在状态，同时用扫描电镜－能谱进行了形貌分析，元素分析等，证实RE，Al,Zr,C,N渗入到了金属表层，在共渗中发现微量稀土元素对铝的活化催渗作用大于其对锆的作用，进一步证实了对氮的作用亦优于对碳的活化催渗作用。     

木材表面改性的XPS分析

利用微波等离子体对木材表面进行处理，并诱导引发接枝甲基丙烯酸甲酯；达到表面改性的效果以提高木质材料的性能，利用X射线光电子能谱(XPS)对木材表面改性前后的表面化学结构进行分析；结果表明：木材经微波等离子体处理，表面氧与碳的原子浓度比(no／nc)增加，产生大量的含氧官能团或过氧化物，从而引发木材与甲基丙烯甲酯单体产生接枝共聚反应。     

Probing the Roughness of Porphyrin Thin Films with X-ray Photoelectron Spectroscopy

Thin-film growth of molecular systems is of interest for many applications, such as for instance organic electronics. In this study, we demonstrate how X-ray photoelectron spectroscopy (XPS) can be used to study the growth behavior of such molecular systems. In XPS, coverages are often calculated assuming a uniform thickness across a surface. This results in an error for rough films, and the magnitude of this error depends on the kinetic energy of the photoelectrons analyzed. We have used this kinetic-energy dependency to estimate the roughnesses of thin porphyrin films grown on rutile TiO₂(110). We used two different molecules: cobalt (II) monocarboxyphenyl-10,15,20-triphenylporphyrin (CoMCTPP), with carboxylic-acid anchor groups, and cobalt (II) tetraphenylporphyrin (CoTPP), without anchor groups. We find CoMCTPP to grow as rough films at room temperature across the studied coverage range, whereas for CoTPP the first two layers remain smooth and even; depositing additional CoTPP results in rough films. Although, XPS is not a common technique for measuring roughness, it is fast and provides information of both roughness and thickness in one measurement.     

X射线光电子能谱在材料研究中的应用

X射线光电子能谱(XPS)在材料科学与工程的许多领域中有着广泛的用途.本文将讨论XPS在材料研究的三个方面的应用,即材料表面改性、固体-固体界面体系及材料与环境的相互作用.我们将引用一些具体的例子来说明XPS的应用价值及其研究方法.所讨论的例子将涉及聚合物和氧化物材料的表面改性、化学及物理气相淀积、粘接界面断裂机制、腐蚀及摩擦等领域.     

Rhodium Catalyst–Ionic Liquids Interaction by X-ray Photoelectron Spectroscopy Data

Russian Journal of Physical Chemistry A - We investigate the Schrock–Osborn catalyst, [Rh(COD)(PPh3)2][PF6], in a series of ionic liquids by XPS. The electronic environment of the rhodium...     

XPS对多层膜中单层膜厚的测定

依据XPS的测量信号与能量损失有一定定量关系的原理,利用数理分析方法,推导数学模型进行多层膜中单层膜厚的计算,该方法是一种测量总膜厚小于10nm的单层膜厚的非破坏性的方法,具有较高的准确性。     

电子能谱线形分析研究碳物种的化学状态

利用ＸＰＳ的ＣＩｓ携上峰,Ｘ射线激发供歇线形,ＸＰＳ价带谱以及俄歇电子能谱的ＣＫＬＬ线形研究了几处碳材料的化学状态和电子结构。研究结果表明：ＸＰＳ的携上效应可以鉴别不同结构的碳材料。ＸＡＥＳＲ 化学位移和线形也可以有效地研究中不同的碳材料的成像方式。ＸＰＳ的价带谱电子结构的一种有效方法,对碳材料的研究也很有效。ＡＥＳ的ＣＫＬＬ俄歇线形非常适合金属碳化物的鉴别。     

Chemical Characterization of DNA-Immobilized InAs Surfaces Using X-ray Photoelectron Spectroscopy and Near-Edge X-ray Absorption Fine Structure

Single-stranded DNA immobilized on an III-V semiconductor is a potential high-sensitivity biosensor. The chemical and electronic changes occurring upon the binding of DNA to the InAs surface are essential to understanding the DNA-immobilization mechanism. In this work, the chemical properties of DNA-immobilized InAs surfaces were determined through high-resolution X-ray photoelectron spectroscopy (XPS) and near-edge X-ray absorption fine structure (NEXAFS). Prior to DNA functionalization, HF- and NH(4)OH- based aqueous etches were used to remove the native oxide from the InAs surface. The initial chemical state of the surface resulting from these etches were characterized prior to functionalization. F-tagged thiolated single-stranded DNA (ssDNA) was used as the probe species under two different functionalization methods. The presence of DNA immobilized on the surface was confirmed from the F 1s, N 1s, and P 2p peaks in the XPS spectra. The presence of salt had a profound effect on the density of immobilized DNA on the InAs surface. To study the interfacial chemistry, the surface was treated with thiolated ssDNA with and without the mercaptohexanol molecule. An analysis of the As 3d and In 3d spectra indicates that both In-S and As-S are present on the surface after DNA functionalization. The amount of In-S and As-S was determined by the functionalization method as well as the presence of mercaptohexanol during functionalization. The orientation of the adsorbed ssDNA is determined by polarization-dependent NEXAFS utilizing the N K-edge. The immobilized ssDNA molecule has a preferred tilt angle with respect to the substrate normal, but with a random azimuthal distribution.     

X-Ray and X-ray Photoelectron Spectroscopy Studies of the Electronic Structure of Borane Derivatives

This paper reviews the results of electronic structure studies of a number of typical members of borane series by X-ray and X-ray photoelectron spectroscopy using quantum chemical calculations. Fragment analysis of the molecular orbital structure is given. The nature of chemical interaction in boron cluster compounds is studied on models: simple molecules NH₃, BH₃, and BF₃ and their adducts NH₃BH₃ and NH₃BF₃. The electronic structure of B₁₀H₁₂L₂ type compounds with Lewis bases L = NH₃, (CH₃)₂S, (C₆H₅)₃P is analyzed. The complexes are considered in terms of the concept of donor–acceptor interactions between the fragments. The donor–acceptor bond has contributions from both occupied and vacant acceptor orbitals. X-ray photoelectron data on the charged states of atoms in the compounds are overviewed. Electron distribution in complex compounds with transition metals [(1,2-B₉C₂H₁₁)₂M]^–, M = Fe^III, Co^III, Ni^III, and Ni^IV and chain type polycobaltocarborane anions {[(3)-1,2-B₉C₂H₁₁]₂Co _n [(3,6)-1,2-B₈C₂H₁₀]_n-1} ^n– , n = 2-7, is considered.     

用X-射线光电子能谱定性和定量分析钴的化学状态

在Ni-MH和Ni-Cd电池制造业中,对钴的价态确定是重要的。高自旋二价钴给出较强的Shake-up伴峰,而三价钴是反磁性的,没有伴峰,由此可以确定钴的价态,并进行定量分析。由实验结果得出下面的经验方程：X%=100（13-20C）/13（C 1）。式中X%是三价钴的百分含量,C是待测样品Co2p1/2Shake-up伴峰与主峰强度之比。此方程可以给出三价钴近似含量。我们从Cop1/2与Shake-up伴峰之间距离或者从伴峰与主峰强度之比,可以鉴别氢氧化亚钴与氧化亚钴。     

双梳型共聚物在莠去津颗粒表面吸附的X射线光电子能谱分析

采用X射线光电子能谱(XPS)研究了双梳型共聚物吸附于莠去津颗粒样品表面的电子状态,计算了吸附厚度.结果表明:吸附后,莠去津颗粒界面的N 1s和Cl 2p谱峰强度明显减弱,Cl 2s几乎消失,而C 1s和O1s谱峰强度则明显增强,这主要是双梳型共聚物中C和O的贡献,且吸附后能在莠去津颗粒界面形成良好的吸附保护膜,其厚度...