Generation of multiparticle three-dimensional entanglement state via adiabatic passage

A scheme is proposed for generating a multiparticle three-dimensional entangled state by appropriately adiabatic evolutions, where atoms are respectively trapped in separated cavities so that individual addressing is needless. In the ideal case, losses due to the spontaneous transition of an atom and the excitation of photons are efficiently suppressed since atoms are all in ground states and the fields remain in a vacuum state. Compared with the previous proposals, the present scheme reduces its required operation time via simultaneously controlling four classical fields. This advantage would become even more obvious as the number of atoms increases. The experimental feasibility is also discussed. The successful preparation of a high-dimensional multiparticle entangled state among distant atoms provides better prospects for quantum communication and distributed quantum computation.     

Elastic dipoles in the model of single-crystal and amorphous copper

The characteristic values of the elastic polarizability tensor components of point defects in crystalline and amorphous copper, which determine changes in the elasticity tensor components upon introduction of defects, have been found using the molecular dynamics method. A relation of the elastic polarizability tensor with the main parameter of the interstitialcy theory, i.e., shear susceptibility, has been established. An analysis of the elastic polarizability tensors of defects in crystalline and amorphous copper has demonstrated that, in a noncrystalline structure, there are specific atomic configurations that under deformation manifest themselves similarly to elastic dipoles (interstitial atoms in a dumbbell configuration) in single-crystal copper.     

γ射线辐照下多壁碳纳米管结构转变过程研究

采用60Coγ射线辐照纯净的多壁碳纳米管,用高分辨透射电镜和拉曼光谱,研究了多壁碳纳米管由石墨结构向无定形结构转变的演化过程.发现在γ射线辐照下,碳纳米管的外部石墨层逐渐失去最初的有序结构而向无定形结构转变.而且,随着γ射线辐照剂量的增加,无定形结构不断推进,而石墨层结构则不断减小,直至使整个碳纳米管变为一个中空的无定形纳米线结构.用原子位移理论和溅射机理对这种转变过程进行了分析.γ射线轰击碳纳米管击出碳原子,碳原子停留在晶格的间隙位置上产生间隙原子,在它原来的平衡位置则留下一个空位.当轰击粒子动能足够大时导致碰撞级联效应,无序结构增加.多数空位和间隙原子可能相互复合而彼此退火,但仍有少数原子作为间隙原子而造成晶格进一步缺陷.辐射也可以引起碳原子的溅射,溅射出来的碳原子沉积在碳纳米管的外壁上形成一层无定形碳结构.     

Multiparticle interatiomic interaction potentials for alloys using the model electron density functional method

A method for calculating multiparticle interatomic interaction potentials for binary alloys within the framework of a model electron density functional is presented. An expression for the total ground state energy of metals and alloys is obtained. It is shown that in simplicity of the computational scheme and speed of computation, this approach does not yield to the method of inserted atoms, but has a more rigorous physical basis in comparison with the latter.Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 4, pp. 90–99, April, 1996.     

Unitarity bounds for multiparticle interaction amplitudes

A regular method of asymptotical estimations for multiparticle interaction amplitudes is constructed. The method gives a generalization of the well-known Froissart result to the multiparticle case.     

First-principles investigation of low energy E' center precursors in amorphous silica

We show that oxygen vacancies are not necessary for the formation of E' centers in amorphous SiO? and that a single O deficiency can lead to two charge traps. Employing molecular dynamics with a reactive potential and density functional theory, we generate an ensemble of stoichiometric and oxygen-deficient amorphous SiO? atomic structures and identify low-energy network defects. Three-coordinated Si atoms appear in several low-energy defects both in stoichiometric and O-deficient samples where, in addition to the neutral oxygen vacancy, they appear as isolated defects.     

Mechanisms of ion-beam-enhanced diffusion in amorphous silicon

We have investigated ion-beam-enhanced diffusion of Au in undoped and B doped amorphous Si. The diffusion coefficients depend linearly on ion flux and exibit an Arrhenius-like temperature dependence with an activation energy of 0.37 eV in the temperature range 200–350° C. Moreover the diffusivity is enhanced by a factor of 5 by B-doping at a concentration of 1×10²⁰ atoms/cm³. A similar enhancement is observed in thermal diffusion of Au which has an activation energy of 1.5 eV. On the basis of these results a model for the ion-beam-enhanced diffusion of Au is proposed where the high density of defects present in amorphous Si act as traps for the fast moving interstitial Au atoms. The effectiveness of this trapping process can be changed by the high concentration of mobile defects generated by the beam and also by a change in the charge state of the traps induced by the presence of B.     

非晶合金Fe78Si9B13在脉冲电流作用下的单相晶化

对非晶合金Fe₇₈Si₉B₁₃进行了超短脉冲电流处理，实现了晶化时α-Fe（Si）单相结构析出．可以认为，脉冲电流作用时，电子运动与非晶中空位型结构缺陷间的周期性排斥效应促进了类金属原子从非晶结构单元中析出，使Fe（Si）原子局部富集，导致基体金属相在较低温度下优先成核．而在空位的定向迁移的同时，将伴随B原子的扩散，则B原子局域富集，Fe-B化合物的形核析出就要受到这两个因素的抑制 关键词：     

Conditional Generation of Multiparticle Entanglement via Cavity QED

We propose a simple scheme to not only generate GHZ states and W states of the multiparticle but also form a new category of multiparticle entangled states by letting the λ-type three-level atoms simultaneously interacting with a coherent cavity field followed by the selective measurements on the cavity mode. We investigate the influence of the cavity dissipation on the generated entangled state and discuss the experimental feasibility of our scheme. It is shown that the intensity of the coherent cavity field plays an instructive role in contribution to state preparation process while the cavity decay and the detuning between the atoms and cavity mode result in the deterioration of the generated entangled state.     

Theoretical study of the diffusion of lithium in crystalline and amorphous silicon

The effect of the lattice deformation on potential barriers for the motion of a lithium atom in crystalline silicon has been studied through ab initio density functional calculations. A new universal method of calculating the diffusion coefficient of an admixture in amorphous solid media through the activation mechanism has been proposed on the basis of these data. The method is based on the calculation of the statistical distribution of potential barriers for the motion of an admixture atom between minima depending on the position of neighboring atoms. First, the amorphous structure, which is generated by annealing from the crystalline structure with vacancies, has been simulated. Then, the statistical distribution of the potential barriers in the amorphous structure for various local environments of the admixture atoms has been calculated by means of linear regression with the parameters determined for barriers in crystalline silicon subjected to different deformations. The diffusion coefficient of the admixture has been calculated from this distribution by using the Arrhenius formula. This method has been tested by the example of crystalline and amorphous silicon with admixture of lithium atoms. The method demonstrates that the diffusion of lithium in amorphous silicon is much faster than that in crystalline silicon; this relation is confirmed experimentally.     

Quantification of Quantum Entanglement in a Multiparticle System of Two-Level Atoms Interacting with a Squeezed Vacuum State of the Radiation Field

We quantify multiparticle quantum entanglement in a system of N two-level atoms interacting with a squeezed vacuum state of the electromagnetic field. We calculate the amount of quantum entanglement present among one hundred such two-level atoms and also show the variation of that entanglement with the radiation field parameter. We show the continuous variation of the amount of quantum entanglement as we continuously increase the number of atoms from N = 2 to N = 100. We also discuss that the multiparticle correlations among the N two-level atoms are made up of all possible bipartite correlations among the N atoms.     

Defects in electron irradiated amorphous SiO2 probed by positron annihilation

Defects in 3-MeV electron irradiated amorphous (a-) SiO₂ were studied by the positron annihilation technique. A high formation probability of positronium (Ps) was found for un-irradiated a-SiO₂ specimens. These Ps atoms were considered to be trapped by vacancy-type defects. The formation probability of Ps was drastically decreased by the electron irradiation. This fact can be attributed to an introduction of vacancy-type defects such as oxygen vacancies by the electron irradiation and a resultant trapping of positrons by such defects.     

Intrinsic stability of quasicrystals under the generation of Frenkel pairs

Under irradiation metastable quasicrystals undergo a phase transition to an amorphous state. This transition can be reversed by annealing. As in normal crystalline materials the phase transition is considered to be triggered by generation and recombination of vacancies and interstitial atoms (Frenkel pairs). We have classified the possible Frenkel defects in a metastable monatomic quasicrystal with respect to geometric and energetic properties. With numerical simulation we have studied the behaviour of the quasicrystal under a load of Frenkel defects for various defect concentrations. We find three ranges of behaviour: up to 5% defects per atom the structure remains icosahedral, in a middle range it stays disordered icosahedral or it becomes either disordered or perfect crystalline, depending on the implementation of the defects. If there are more than 10% defects the structure becomes irreversibly amorphous. We finally compare our results with experimental data.     

Mechanism of interconversion among radiation-induced defects in amorphous silicon dioxide

We here present a series of ab initio quantum-chemical calculations on clusters of atoms modeling several oxygen-deficiency-related defects in amorphous silica and illustrate how these defect centers will change their atomic configurations upon photoionization. We first give theoretical evidence that structural conversion from a neutral oxygen monovacancy to a divalent Si defect is possible, explaining the observed photoluminescence properties associated with these defects.     

Direct-energy processes and phase transitions in silicon

Summary The phase transition of amorphous to single-crystal silicon has been investigated not only by conventional heating in a furnace but under direct-energy processes like pulsed-laser and ion beam irradiation. The first method allows the experimental determination of the free-energy-temperature diagram for amorphous, liquid and crystalline silicon. Due to the very fast heating and cooling the amorphous-to-liquid transition can be investigated in both directions. Ion beam irradiation induces either a layer-by-layer amorphization or crystallization by the movement of the initial α-Si/c-Si interface according to the substrate temperature. The two processes are governed by different types of defects created by the beam in the amorphous and in the crystalline side of the interface. The existence of a native-oxide layer at the interface between single crystal and deposited layer retards the ion beam crystallization until oxygen atoms are dispersed by beam mixing in the matrix. A recent alternative way of crystallizing deposited layers is by short high-temperature anneals obtained by incoherent-light irradiations. In this case the rupture of the native-oxide layer is achieved by the agglomeration of oxide into beads, thus allowing the realignment. This technique appears to be particularly promising for several technological applications. In honour of Prof. Fausto Fumi on the occasion of his retirement from teaching.     

Effect of magnetic stabilization of Rydberg atoms and multiparticle complexes in an ultracold plasma

Magnetic stabilization of Rydberg atoms and multiparticle complexes in an ultracold plasma placed in a magnetic field owing to the diamagnetic shift similar to the diamagnetic shift in semiconductors has been predicted.     

Self-affine analysis of multiparticle production in pp collisions at 400 GeV/c with continuously varying scale

A self-affine analysis of multiparticle production in pp collisions at 400 GeV/c was performed by using the method of continuously varying scale. Comparing with the results obtained from self-similar analysis, the self-affine analysis shows a better power-law behavior. The fractality in multiparticle production is self-affine rather than self-similar.     

Free entanglement measure of multiparticle quantum states

In this Letter, based on the classification of multiparticle states and the original definition of semiseparability, we give out the redefinition of semiseparability and inseparability of multiparticle states. By virtue of the redefinition, entanglement measure of multiparticle states can be converted into bipartite entanglement measure in arbitrary dimension in mathematical method. A simple expression of entanglement measure is given out. As examples, a general three-particle pure state and an N-particle mixed state are considered.     

Molecular dynamics study of structural damage in amorphous silica induced by swift heavy-ion radiation

In this paper, the radiation defects induced by the swift heavy ions and the recoil atoms in amorphous SiO₂ were studied. The energy of recoil atoms induced by the incident Au ions in SiO₂ was calculated by using Monte Carlo method. Results show that the average energies of recoils reach the maximum (200?eV for Si and 130?eV for O, respectively) when the incident energy of Au ion is 100?MeV. Using Tersoff/zbl potential with the newly built parameters, the defects formation processes in SiO₂ induced by the recoils were studied by using molecular dynamics method. The displacement threshold energies (E_d) for Si and O atoms are found to be 33.5 and 16.3?eV, respectively. Several types of under- and over-coordinated Si and O defects were analyzed. The results demonstrate that Si₃, Si₅, and O₁ are the mainly defects in SiO₂ after radiation. Besides, the size of cylindrical damage region produced by a single recoil atom was calculated. The calculation shows that the depth and the radius are up to 2.0 and 1.4?nm when the energy of recoils is 200?eV. Finally, it is estimated that the Au ion would induce a defected track with a diameter of 4?nm in SiO₂.     

Post-Hartree-Fock methods and dynamic correlation in atoms and molecules

The methods of calculation of the matrix of the exchange-correlation interaction are considered within the framework of one post-Hartree-Fock one-electron method of investigation of the properties of many-electron systems. Such post-Hartree-Fock methods are based on two-step variational self-consistent calculations of the spin orbitals and superposition coefficients of configurations in the multiconfiguration approximation. The post-Hartree-Fock method used involves an approach related to the extended Koopmans’ theorem, which, in turn, proves to be a high-energy approximation for quantum Green’s functions. Obvious application areas of the calculations of the exchange-correlation interaction within the framework of the method proposed are the multiparticle perturbation theory, the parameterization of the energy representation as a functional of the single-particle density matrix, and the theory of Green’s functions in the multiconfiguration approximation. A relativistic generalization of the method with the aim of calculating the radiative corrections for many-electron atoms and for problems of interaction with an external field in the nonstationary Floquet theory is possible.