声化学法合成ZnS纳米晶及反应动力学研究

采用声化学法制备了ZnS纳米晶,对其反应动力学进行了研究,利用XRD、TEM等手段对样品进行了表征.结果表明,以无水氯化锌、硫代乙酰胺为原料,采用声化学法可以制备粒径在10 nm左右的ZnS纳米晶,所得样品为α-ZnS纤锌矿结构,六方晶系,形貌为球形或近球形.随超声功率增加,ZnS纳米晶粒度降低.动力学研究表明,ZnS纳米晶的生成量随时间呈线性增加,ZnS纳米晶的生成活化能为29.88 kJ/mol.     

纳米氧化镱对熔融石英析晶动力学机制的影响

本文研究引入纳米氧化镱对熔融石英析晶机制及动力学过程的影响.通过X射线衍射仪(XRD)测试结果分析了纳米氧化镱的引入对熔融石英陶瓷析晶率的影响,采用动力学方法分析了纳米氧化镱的引入对熔融石英陶瓷析晶机制的影响,同时探讨了其等温析晶动力学过程.研究表明,熔融石英陶瓷的晶粒向二维兼有一维及三维的方式生长,引入纳米氧化镱的熔...     

复合晶核剂对黄磷炉渣微晶玻璃析晶的影响

以黄磷炉渣为主要原料,通过添加不同种类的复合晶核剂,采用熔融法制备了黄磷炉渣微晶玻璃.借助化学热力学软件FactSage 6.4模拟计算晶相类型,借助Kissinger方程分析析晶能力,利用X射线衍射仪(XRD)和扫描电子显微镜(SEM)进行验证.结果表明:相比添加单一晶核剂TiO2,复合晶核剂TiO2+CaF2或复合晶核剂TiO2+P2O5均能够降低黄磷炉渣基础玻璃的析晶活化能E,促进其析晶,复合晶核剂TiO2+Cr2O3能够提高黄磷炉渣基础玻璃的析晶活化能E,抑制其析晶;无论添加单一晶核剂TiO2,还是添加复合晶核剂TiO2+CaF2、复合晶核剂TiO2+P2O5或复合晶核剂TiO2+Cr2O3,黄磷炉渣微晶玻璃晶相类型相同,主晶相为硅灰石(CaSiO3),副晶相为铝透辉石(Ca(Mg,Al)(Si,Al)2O6)和氟磷灰石(Ca5(PO4)3F),这与化学热力学软件FactSage 6.4模拟计算结果基本一致.     

SiC单晶生长热力学和动力学的研究

升华法生长大直径碳化硅(SiC)单晶一直是近年来国内外研究的重点,本文对Si-C系中的Si,Si2,Si3,C,C2,C3,C4,C5,SiC,Si2C,SiC2等气相物种的热力学平衡过程进行了研究,发现SiC生长体系中的主要物种为Si,Si2C,SiC2.生长初期Si的分压较高,从而SiC生长为富硅生长模式.对外加气体进行研究发现,氩气为最好的外加气体,它既可以有效地抑制Si物质流传输,又可以减缓扩散系数随温度升高而递减的趋势.建立了简单一维传输模型,对三个主要物种的动力学输运过程进行了研究,计算得到了两个温度梯度下的主要物种的物质流密度.     

熔盐条件下反应原料对钛酸钡相形成动力学的影响研究

选择硝酸钡、乙酸钡、碳酸钡、氢氧化钡与二氧化钛作原料,利用熔盐法,在不同温度,不同保温时间下煅烧制备高纯度的钛酸钡纳米晶.采用XRD、SEM对样品进行表征的基础上,通过模拟初步研究了不同反应原料对钛酸钡晶体合成动力学的影响.结果表明:各组反应物均符合JMAK模型和纯界面模型,说明这两个模型是熔盐法制备钛酸钡的生长动力学的通用模型.此外,硝酸钡、乙酸钡两组还符合自由形核、快速生长模型和收缩球面界面模型,而碳酸钡和氢氧化钡两组则不符合,这可能和反应物分解温度有关,不同的分解温度会影响动力学过程.     

负离子配位多面体生长基元与枝蔓晶的形成

本文运用负离子配位多面体生长基元理论模型讨论了KNbO3,β-SiO2和雪花枝蔓晶的形成机理,提出了枝蔓晶的结晶形态和对称性与晶体中的负离子配位多面体相互联结时的稳定方面密切相关.枝蔓晶是在远离晶体生长平衡态的条件下,以负离子配位多面体为生长基元,相互按照最稳定的联结方位延伸的.     

无光釉中LiAlSiO4-SiO2固溶体的枝晶研究

本文研究了无光釉中LiAlSiO4-SiO2固溶体的枝晶形貌、物相、成分、形成温度及其关系.六枝雪花状枝晶为六方晶系的β-石英固溶体,十字状枝晶为四方晶系的凯石英固溶体,即枝晶形貌反映了晶体结构的对称.枝晶的成分与基质玻璃的成分分异与形成温度和机制有关.枝晶形成时存在两种机制,其生长基元分别为原子(分子)生长或晶核切变生长.枝晶分枝程度和形成机制除与过冷度有关外,还与枝晶对称性有关.四方凯石英枝晶多以原子(分子)生长,其分枝少;六方β-石英枝晶多以晶核切变机制生长,其分枝多.     

水热反应温度对碱性条件下TiO2纳米晶生长动力学及其光电性能的影响

以钛酸丁酯为原料,在碱性条件下水热合成了锐钛矿相TiO2纳米晶.采用X射线衍射仪、比表面积测试仪、扫描电子显微镜等方法对纳米晶粒的晶体结构、比表面积以及光阳极的表面形貌分别进行表征,研究水热反应温度对TiO2纳米晶生长动力学过程的影响规律.结果表明:随着温度的升高,锐钛矿相纳米晶的平均晶粒尺寸先增大后减小.光电转换性能测试表明,电池的光电转换性能随着水热反应温度的升高而增大,在220℃时获得最大光电转换效率4.05;( 1sun,100 mW/cm2).并分析了水热反应温度对碱性条件下TiO2纳米晶粒的生长动力学过程和电池光电转换性能的影响机制.     

近化学计量比铌酸锂晶体中机械孪晶的消除

在用掺钾的助熔剂提拉法生长近化学计量比LiNbO3晶体时,长出的晶体尾部很容易出现孪晶裂纹现象,这种孪晶被认为是机械孪晶.这种孪晶的起因是由于晶体生长的收尾和从熔体中提起晶体阶段,在晶体底部产生直径的缩进,在缩进产生的台阶处出现应力集中,从而造成孪晶的成核.通过采用适当的收尾过程,以避免直径台阶的出现,可以很好地消除这种孪晶及其引起的裂纹.     

热处理制度对LZAS系微晶玻璃析晶行为的影响

采用烧结法制备了Li2O-ZnO-Al2O3-SiO2 (LZAS)系微晶玻璃.采用DTA曲线初步确定了LZAS系微晶玻璃的成核和晶化温度范围,再用传统方法确定其最佳热处理制度.分别研究了核化温度、核化时间和晶化温度对LZAS系微晶玻璃析晶行为的影响.此外,还对比分析了两步和一步热处理制度对此玻璃析晶行为的影响.研究结果表明:核化温度和核化时间严重影响LZAS微晶玻璃的结晶度,对析出物相种类影响较小;晶化温度对LZAS微晶玻璃析出晶体的种类、晶粒的大小和晶体尺寸的均匀性有重要影响;两步法和一步法热处理对析出晶相的种类和材料的微观结构影响不大,但经历两步法热处理析出晶体的数量更多;LZAS系微晶玻璃在热处理过程中产生了2种相变:方石英转化为β-石英固溶体,γⅡ-LZS转化为γ0-LZS.     

On the Kinetics of Interface Processes on Silver Halide Crystals

In the present paper the activation energies of the transport of Ag⁺ ions in AgCl and AgBr crystals are calculated with the help of a quantum theoretical equation involving the frequency of the optical phonons of the crystal lattice, the mean coordination number for the diffusing ion, and the vibrational quantum number. Comparison of the calculated activation energies with values available from the literature, which were obtained by measurements of electrical conductivity, dielectric loss, diffusion and mass transfer processes, shows good agreement.     

Electrical Processes Occurring at the Moment of Cleaving NaCl Crystals

The electrical processes occurring on cleaving tempered NaCl crystals have been studied by decoration methods on the scale of electron microscopy. The decorating agent, gold, was evaporated at the moment of performing the cleavage. The obtained decoration pictures differed from those described in the literature. Features similar to the propagation of waves were observed. They begin on cleavage steps and are mostly parallel to 〈100〉. On interaction of the “waves” with the steps or with other “waves” there arise black “threads” distinguished, the same as the wave boundaries, owing to a very high contrast on account of the higher density of decorating particles. The waves and threads are interpreted as microbreakdowns, which have also a two-stage character - stages of wave and thread formation, propagate along definite crystallographic directions, and occur at the boundary of strained sites. The charge sign of the waves is determined from the degree of coalescence of decorating gold particles. The detected waves reflect the occurrence of specific polarization states in local sites of the surface. These states are induced by local electric fields of a very high intensity occurring on cleaving the crystals. These polarization states disappear in 10-15 s after the cleavage is made due to neutralization of the charges. Analogy is drawn between polarization structures in form of waves and stable linear polarization bridges occurring in crystals between oppositely charged point defects and their assemblies.     

CMTD晶体的分解过程原子力显微镜实时观测研究

用原子力显微镜实时观测了有机晶体CMTD(CdHg(SCN)4(H6C2OS)2)的表面分解过程,这一分解过程是以表面形貌变化来表征的,并且能反映分解过程中的一些固态反应的物理一化学变化机制.X射线能谱分析(EDAX)表明,相对于新鲜的CMTD晶体,在分解物中Hg低而S高;X射线衍射(XRD)表明分解物为非晶态;红外吸收光谱(IR)表明在CMTD晶体结构中的(H6C2OS)结构基元被分解为H2O和酸;量热分析(DSC)表明CMTD晶体在室温空气中确实有化学反应发生.本文用原子力显微镜实时记录了这一分解过程的形貌变化,发现这种非晶态的分解物的产生过程为:成核一核生长一核分散等.这是首次用原子力显微镜实时观测到这种分解过程.     

Diffraction Investigation of Transient Processes of Domain Formation in Liquid Crystals

A coherent light diffraction method for investigation of domain formation in liquid crystal is proposed. The good agreement between theoretical predictions and the experimental results has been demonstrated.     

Influence of Dislocations in KDP Crystals on Laser Damage Threshold

The dislocation density in KDP crystals has been determined by X-ray diffraction topography (LANG method). A method for determining the laser damage thresholds in dependence on dislocation density is described. It is found that dislocations with a density about 10³ cm⁻² reduce the laser damage threshold up to a factor of two compared with perfect regions. It is shown that experimentally measured damage results can be explained theoretically.     

In-situ Observations on Dynamic Processes Associated with Stacking Faults and Deformation Twins in Silicon Crystals

Stacking faults and thin deformation twins are observed to develop during the in-situ deformation of silicon crystals at elevated temperatures in a HVEM. Both the nucleation and the motion of partial dislocations take place under the applied stress in the regions of the stress concentration. Twinning dislocations moving on twin boundaries are extremely flexible. The spontaneous nucleation of loops of twinning dislocation on twin boundaries is observed rather frequently. No pole mechanism is observed to be operating. Stacking faults and deformation twins interact with glide dislocations moving along the intersecting planes by various ways.     

In-situ HVEM Observations of Dislocation Processes during High Temperature Deformation of Silicon Crystals

The characteristics in the plastic deformation of silicon crystals are first reviewed. Such characteristics have been interpreted quantitatively on the basis of some models on the velocity and the multiplication of dislocations during deformation. The results of the in-situ observations of silicon crystals deformed at elevated temperatures in a HVEM are presented. The slowness and the smoothness in the dislocation motion, the dynamic pile-up as a general mode of the collective motion of dislocations, the formation processes of multiplication centers of dislocations observed during the deformation all support the validity of the models adopted. Dislocation dipoles and Lomer-Cottrell sessiles are observed not to act as strong obstacles which play important roles in the work hardening of the crystals.     

硼含量对含硼金刚石单晶电学性能的影响

采用碳化硼添加量不同的铁基触媒,在高温高压下合成含硼金刚石单晶.用数字电桥和自制的电阻测量夹具测量了含硼金刚石单晶的电阻;用阴极射线发光光谱测量了金刚石单晶的光子频数;用XRD检测了不同硼含量掺杂的金刚石单晶的晶体结构.结果表明:随着触媒中碳化硼添加量的增加,含硼金刚石单晶的电阻率降低,可呈现半导体电阻特性.其原因是硼元素的掺入促进了金刚石单晶的(111)晶面生长,使受主能级提高,晶体的带隙变窄,载流子浓度提高.     

Influence of Quenching on Microhardness and Dislocation Mobility of Doped NaCl Crystals

The effect of quenching on microhardness and dislocation mobility of NaCl:Ca and NaCl:Pb single crystals was studied. Both the decrease and increase of these parameters in quenching occurred depending on the type and concentration of impurity and quenching temperature. The absence of correlation between the changes of microhardness and those of dislocation ensemble mobility which resulted from the quenching, has been found first. The conditions of the observation of this phenomenon were revealed and the interpretation of the experimental facts was proposed.     

Influence of Impurities and Testing Atmosphere on High-temperature Deformation of CsI Crystals

The influence of anion (bromine) and cation (cadmium and barium) impurities, as well as testing atmosphere (air, argon, vacuum) on high temperature deformation of CsI crystals is studied. This deformation in CsI has some peculiarities, which are the superplasticity signs and evidencing about instability of a lattice state. All the impurities studied caused the hardening, their effect in superplasticity depends on its solubility in the CsI lattice: the less the solubility, the stronger the effect. With testing in vacuum and argon, when the formation of point defect clusters occurs, enhanced the superplasticity evidence compared to that by testing in air, where clustering is prevented. These facts, as well as a quality resemblance of stress-strain curves of single- and polycrystalline specimens give the basis for the conclusion, that superplasticity is the manifestation of a plastic instability of the crystal, the instability centers may be precipitates and point defect clusters.