An improved approximation to the microstrip line capacitance

A new empirical formula is presented for the normalised capacitance of microstrip lines. The formula uses a single equation to represent the microstrip line capacitance over the useful range of the aspect ratio. The maximum error of the new formula is contained within 0.8 percent and the relative root-mean-square error is contained within 0.55 percent. The new formula can be easily implemented in computeraided design and analysis as well as in hand calculations using pocket calculators.     

Selective Andreev reflection tuned by magnetic barriers in graphene-superconductor hybrid junctions

We investigate the direction-dependent Andreev reflection of normal state-superconductor junctions both in monolayer and bilayer graphene with a single magnetic barrier by means of the Green?s function formalism. Such a barrier is capable of tuning the preferred angles of incidence for the Andreev retro-reflection. It enhances the specular reflection probability for certain angles of incidence in bilayer-based hybrid structures. We further study the impacts of magnetic barriers on the monolayer and bilayer hybrid structures by calculating the differential conductances within the Blonder–Tinkham–Klapwijk formula for experimental comparisons.     

A resistance formula for coherent multi-barrier structures

Using the Landauer formula and the quantum S-matrix scattering theory, we derive a resistance formula for multi-barrier structure under phase coherent transmission condition. This formula shows that when the transport is coherent, the potential wells of the structure are just like conductors contributing to the overall resistance. And because the resistance formula is derived based on the scattering theory, the barrier resistance will change with the number of scattering centres (i.e. the number of barriers) in the structure.     

Sound diffraction by multiple wedges and thin screens

A theoretical formula that is based on the geometrical theory of diffraction (GTD) is proposed for computing sound diffraction by multiple wedges, barriers, and polygonal-like shapes. The formula can treat both convex and concave edges, where edges may or may not be inter-connected. Comparisons of theoretical predictions with other results done by the BEM or experiments for scaled model confirm the accuracy of the present formula. Numerical examples such as double wedges and doubly inclined barrier show that when there exist several diffraction paths for given source and receiver positions, the insertion loss is dominated by the diffraction associated with the shortest propagation path. It is also found that although the partially inclined barrier increases the shadow zone as compared to the simple screen type of the same total height, it does not necessarily increase the insertion loss at all heights.     

异质原子在Cu（001）表面扩散的分子动力学模拟

采用分子动力学方法模拟单个增原子Ag,Pd和Cu在Cu（001）表面上的扩散过程.通过对自扩散和异质扩散过程中扩散机制的观察,统计三种不同的增原子在不同温度下的扩散频率,拟合给出扩散势垒和扩散频率的指前因子,并与扩散势垒的静力学计算结果进行比较.结果表明：在800 K以下时,三种增原子均以简单跳跃机制为主扩散,与衬底不互溶的Ag增原子的跳跃频率最大,与衬底互溶的Pd增原子的跳跃频率最小.同质增原子与异质增原子的扩散频率和温度的关系均较好地符合Arrhenius公式,由Arrhenius公式拟合给出的三种不同增原子的扩散势垒与表面结构和增原子表面结合能有关.Pd和Cu增原子从跳跃机制为主向交换机制为主的转换温度分别在825和937 K左右. 关键词： 表面扩散 分子动力学模拟     

Analytical calculation of fusion barriers and cross-sections for spin-saturated colliding nuclei

We present an analytical formula for calculating the fusion barriers and fusion cross-sections. This is based on Skyrme energy density formalism and the Proximity force theorem. Comparisons with experimental data are also presented.     

K-doping dependence of the Fermi surface of the iron-arsenic Ba1-xKxFe2As2 superconductor using angle-resolved photoemission spectroscopy

We use angle-resolved photoemission spectroscopy to investigate the electronic properties of the newly discovered iron-arsenic superconductor Ba_(1-x)K_(x)Fe_(2)As_(2) and nonsuperconducting BaFe_(2)As_(2). Our study indicates that the Fermi surface of the undoped, parent compound BaFe_(2)As_(2) consists of hole pocket(s) at Gamma (0,0) and larger electron pocket(s) at X (1,0), in general agreement with full-potential linearized plane wave calculations. Upon doping with potassium, the hole pocket expands and the electron pocket becomes smaller with its bottom approaching the chemical potential. Such an evolution of the Fermi surface is consistent with hole doping within a rigid-band shift model. Our results also indicate that the full-potential linearized plane wave calculation is a reasonable approach for modeling the electronic properties of both undoped and K-doped iron arsenites.     

Numerical calculation of the rate of strain of interstitial solid solutions under irradiation. I. Model of radiation creep

A model of radiation creep of interstitial solid solutions is developed on the basis of the combined motion of dislocations, including their glide and climb past obstacles. The obstacles considered are forest dislocations and pileups of radiation-induced point defects. A computational formula for the rate of strain is derived which describes creep at high stresses, when the gliding dislocations overcome some of the barriers by force, and a method is described for determining the average distance traversed by a dislocation in the glide plane under the influence of the stress until it is stopped by barriers. The results are compared with those of other authors. It is shown that the formula obtained for the rate of strain goes over in particular cases to those given by the previously known SIPA, Gittus-Mansur, and glide-climb models of radiation creep. Zh. Tekh. Fiz. 69, 64–71 (January 1999)     

The barrier systematics of fusion and capture of heavy systems within the surface friction model

Available experimental fusion and capture barriers for heavy systems are compared to calculated barriers within the surface friction model. The average trend of the experimental surplus energies over the Bass barriers is reproduced more satisfactorily than with dynamical extra-extra push calculations.     

Surface and near-surface passivation, chemical reaction, and Schottky barrier formation at ZnO surfaces and interfaces

Using a combination of depth-resolved cathodoluminescence spectroscopy, electronic transport, and surface science techniques, we have demonstrated the primary role of native defects within ZnO single crystals as well as native defects created by metallization on metal-ZnO Schottky barrier heights and their ideality factors. Native defects and impurities resident within the ZnO depletion region as well as defects extending into the bulk from the intimate metal-ZnO interface contribute to barrier thinning of, carrier hopping across, and tunneling through these Schottky barriers. Chemical reactions at clean ZnO-metal interfaces lead to metal-specific eutectic or oxide formation with pronounced transport effects. These results highlight the importance of bulk crystal quality, surface cleaning, metal interaction, and post-metallization annealing for controlling Schottky barriers.     

Investigations on AlGaN‐Based Deep‐Ultraviolet Light‐Emitting Diodes With Si‐Doped Quantum Barriers of Different Doping Concentrations

In this work, we investigate the impact of Si doped AlGaN quantum barriers on the optical powers for [0001] oriented III‐nitride based deep‐ultraviolet light‐emitting diodes (DUV LEDs). The polarization‐induced electric field in the active region is screened as the result of Si‐doped quantum barriers, which gives rise to the improved spatial overlap between electron and hole wave functions. The polarization screening effect within the quantum wells is further proven by the observation of the blue shift for the wavelength. However, the hole distribution across the active region can be significantly retarded if the Si dosage in the quantum barriers is too high. Therefore, the improved radiative recombination within the active region can be realized provided that the Si dosage in the quantum barriers is moderately adjusted to guarantee both the better hole injection efficiency and the screened polarization effect in the multiple quantum wells.     

Entrance and exit channels for the heaviest elements

The potential barriers governing the entrance and α decay channels of the heaviest elements have been determined within a Generalized Liquid Drop Model including the asymmetry, the proximity effects, an adjustment to reproduce the Q value and within the asymmetric two-center shell model and the Strutinsky method. In cold fusion reactions double-hump barriers stand and incomplete fusion may occur. Warm fusion paths lead to one-hump potential barriers but also to very excited systems cooling down by neutron or even α particle evaporation. Partial half-lives for α decay have been calculated and compared with the new available experimental data.     

混响室中单极子的声功率发射

在本文中推出了混响室内一个简单声源的功率发射的准确公式,并用简单分析方法求得声功率发射的重要特性。其一就是声源在混响室内的平均功率并不等于其在自由声场中的功率,而是大于后者,这是前人所未料及的。还进一步推出一平滑的统计公式,后者一直可用于波长接近于室内平均自由程的低频率。由这公式可看到室中有很多功率发射峰值的点,在室内形成规则的立体网格,接近周围墙壁则为高发射区。统计公式在预测声功率发射沿与混响室某长、宽、高方向的相对变化时,基本是准确的,只有平滑时引起的误差,用于室内声场的一般估计时可能有较多误差。为说明问题,文中举了几个数字实例以比较简正波理论和统计理论的结果。混响室内声功率发射的变化影响声源的使用和测量,必须予以注意。     

Quasi-bound states, resonance tunnelling, and tunnelling times generated by twin symmetric barriers

In analogy with the definition of resonant or quasi-bound states used in three-dimensional quantal scattering, we define the quasi-bound states that occur in one-dimensional transmission generated by twin symmetric potential barriers and evaluate their energies and widths using two typical examples: (i) twin rectangular barrier and (ii) twin Gaussian-type barrier. The energies at which reflectionless transmission occurs correspond to these states and the widths of the transmission peaks are also the same as those of quasi-bound states. We compare the behaviour of the magnitude of wave functions of quasi-bound states with those for bound states and with the above-barrier state wave function. We deduce a Breit-Wigner-type resonance formula which neatly describes the variation of transmission coefficient as a function of energy at below-barrier energies. Similar formula with additional empirical term explains approximately the peaks of transmission coefficients at above-barrier energies as well. Further, we study the variation of tunnelling time as a function of energy and compare the same with transmission, reflection time and Breit-Wigner delay time around a quasi-bound state energy. We also find that tunnelling time is of the same order of magnitude as lifetime of the quasi-bound state, but somewhat larger.     

Theoretical study of the diffusion of lithium in crystalline and amorphous silicon

The effect of the lattice deformation on potential barriers for the motion of a lithium atom in crystalline silicon has been studied through ab initio density functional calculations. A new universal method of calculating the diffusion coefficient of an admixture in amorphous solid media through the activation mechanism has been proposed on the basis of these data. The method is based on the calculation of the statistical distribution of potential barriers for the motion of an admixture atom between minima depending on the position of neighboring atoms. First, the amorphous structure, which is generated by annealing from the crystalline structure with vacancies, has been simulated. Then, the statistical distribution of the potential barriers in the amorphous structure for various local environments of the admixture atoms has been calculated by means of linear regression with the parameters determined for barriers in crystalline silicon subjected to different deformations. The diffusion coefficient of the admixture has been calculated from this distribution by using the Arrhenius formula. This method has been tested by the example of crystalline and amorphous silicon with admixture of lithium atoms. The method demonstrates that the diffusion of lithium in amorphous silicon is much faster than that in crystalline silicon; this relation is confirmed experimentally.     

Transport Characteristics of Mesoscopic Radio-Frequency Single Electron Transistor

The transport property of a quantum dot under the influence of external time-dependent field is investigated. The mesoscopic device is modelled as semiconductor quantum dot coupled weakly to superconducting leads via asymmetric double tunnel barriers of different heights. An expression for the current is deduced by using the Landauer-Buttiker formula, taking into consideration of both the Coulomb blockade effect and the magnetic field. It is found that the periodic oscillation of the current with the magnetic field is controlled by the ratio of the frequency of the applied ac-field to the electron cyclotron frequency. Our results show that the present device operates as a radio-frequency single electron transistor.     

Performance of a noise barrier within an enclosed space

The present study involved experimental, theoretical, and numerical analyses of the insertion loss provided by rigid noise barriers in an enclosed space. The existing classical diffuse-field theory may be unable to predict the actual sound pressure level distribution and barrier insertion loss for indoor applications. Although predictions made by the ray tracing method at high frequencies are reasonably satisfactory, the method is computer-intensive and time-consuming. We propose a new formula that incorporates the effects of diffraction theory and the reflection of sound between room surfaces. Our results indicate that the present formula provides more realistic and practical predictions of the barrier insertion loss than existing approaches.     

The Analytical Parametrization of Fusion Barrier by Using the Skyrme Energy-Density Function Model

Using the skyrme energy density formalism, a pocket formula is introduced for barrier heights and positions of 95 fusion reactions (48 ≤ Z_PZ_T ≤ 1520) with respect to the charge and mass numbers of the interacting nuclei. It is shown that the parameterized values of RB and VB are able to reproduce the corresponding experimental data with good accuracy. Moreover, the absolute errors of our formulas are less than those obtained using the analytical parametrization forms of the fusion barrier based on the proximity versions. The ability of the parameterized forms of the barrier heights and its positions to reproduce the experimental data of the fusion cross section have been analyzed using the Wong model.     

Large-scale fission-barrier calculations with the ETFSI method

Within the context of a project to treat all the nuclear aspects of the astrophysical r-process on a unified microscopic basis, we have extended the ETFSI (extended Thomas-Fermi plus Strutinsky Integral) method to the calculation of fission barriers, and compared our results to a large number of measured barrier heights. With the force SkSC4, on which the ETFSI-1 mass formula was based, we find that if the primary (highest) barrier is lower than 10 MeV, the error never exceeds 1.4 MeV, with either sign being possible. For primary barrier heights lying between 10 and 15 MeV we probably overestimate the height by around 1.5 MeV. It should thus be possible to use the ETFSI method to make reliable calculations of the experimentally inaccessible fission barriers relevant to the r-process.     

Th and U fission barriers within the Woods-Saxon two center shell model

Fission barriers of actinides are calculated in the framework of the macroscopic-microscopic method. The single particle energies are obtained within a new version of the Woods-Saxon two-center shell model. A nuclear shape parametrization characterized by five degrees of freedom is used. The barriers are calculated along the minimal action trajectory in the configuration space and the inertia is evaluated within the cranking formalism. The reliability of the model is tested by comparing the theoretical results with values deduced from experimental data.