Photoluminescence studies of red-emitting NaEu(WO4)2 as a near-UV or blue convertible phosphor

Sodium europium double tungstate [NaEu(WO₄)₂] phosphor was prepared by the solid-state reaction method. Its crystal structure, photoluminescence properties and thermal quenching characteristics were investigated aiming at the potential application in the field of white light-emitting diodes (LEDs). The influences of Sm doping on the photoluminescence properties of this phosphor were also studied. It is found that this phosphor can be effectively excited by 394 or 464 nm light, which nicely match the output wavelengths of near-ultraviolet (UV) or blue LED chips. Under 394 or 464 nm light excitation, this phosphor exhibits stronger emission intensity than the Y₂O₂S:Eu³⁺ or Eu²⁺-activated sulfide phosphor. The introduction of Sm³⁺ ions can broaden the excitation peaks at 394 and 464 nm of the NaEu(WO₄)₂ phosphor and significantly enhance its relative luminance under 400 and 460 nm LEDs excitation. Furthermore, the relative luminance of NaEu(WO₄)₂ phosphor shows a superior thermal stability compared with the commercially used sulfide or oxysulfide phosphor, and make it a promising red phosphor for solid-state lighting devices based on near-UV or blue LED chips.     

Combustion synthesis and luminescence properties of NaY1−xEux(WO4)2 phosphors

The red phosphors NaY_1−xEu_x(WO₄)₂ with different concentrations of Eu³⁺ were synthesized via the combustion synthesis method. As a comparison, NaEu(WO₄)₂ was prepared by the solid-state reaction method. The phase composition and optical properties of as-synthesized samples were studied by X-ray powder diffraction and photoluminescence spectra. The results show that the red light emission intensity of the combustion synthesized samples under 394 nm excitation increases with increase in Eu³⁺ concentrations and calcination temperatures. Without Y ions doping, the emission spectra intensity of the NaEu(WO₄)₂ phosphor prepared by the combustion method fired at 900 °C is higher than that prepared by the solid-state reaction at 1100 °C. NaEu(WO₄)₂ phosphor synthesized by the combustion method at 1100 °C exhibits the strongest red emission under 394 nm excitation and appropriate CIE chromaticity coordinates (x=0.64, y=0.33) close to the NTSC standard value. Thus, its excellent luminescence properties make it a promising phosphor for near UV InGaN chip-based red-emitting LED application.     

Luminescence investigation of red phosphors Ca0.54Sr0.34−1.5xEu0.08Smx(MoO4)y (WO4)1−y for UV-white LED device

Ca_0.54Sr_0.34−1.5xEu_0.08Sm_x(MoO₄)_y (WO₄)_1−y red phosphors were prepared by solid-state reaction using Na⁺ as a charge compensator for light-emitting diodes (LED). The effects of Na⁺ concentration, synthesis temperature, reaction time and Eu³⁺ concentration were studied for the properties of luminescence and crystal structure of red phosphors. The results show that the optimum reaction condition is 6%, 900 °C, 2 h and 8%. The photoluminescence spectra show that red phosphors are effectively excited at 616 nm by 292, 395 and 465 nm. The wavelengths of 465 nm nicely match the widely applied emission wavelengths of blue LED chips.     

Preparation and luminescent properties of phosphor MGd2(MoO4)4: Eu (M=Ca, Sr and Ba)

Intense red emitting phosphors MGd₂(MoO₄)₄: Eu³⁺ (M=Ca, Sr and Ba) have been synthesized by the simple sol-gel technique. The formation processes and the phase impurity of phosphors are characterized by thermogravimetry-differential thermal analysis (TG-DTA) and power X-ray diffraction (XRD). The narrower size distribution and the regular shape of the phosphor particles are also measured by Field emission scanning electronic microscopy (FE-SEM). Photo-luminescent properties of the phosphors are performed at room temperature. Their excitation spectra present strong absorption at 395 nm near-UV light and 465 nm blue light, which match well with commercial LED chips. The phosphors exhibit satisfactory and excellent red light dominated by 616 nm and their photoluminescence intensity is about 3-4 times stronger than that of phosphor YAG under the 465 nm excitation. In addition, the optimal concentrations of Eu³⁺ for phosphors MGd₂(MoO₄)₄ (M=Ca, Sr and Ba) have also been determined.     

Synthesis and characterization of Eu doped SrY2O4 phosphor

The present paper reports that TL glow curve and kinetic parameter of Eu³⁺ doped SrY₂O₄ phosphor irradiated by beta source. Sample was prepared by solid state preparation method. Sample was characterized by XRD analysis and particle size was calculated by Debye–Scherrer formula. The sample was irradiated with Sr-90 beta source giving a dose of 10 Gy and the heating rate used for TL measurements are 6.7 °C/s. The samples display good TL peaks at 106 °C, 225 °C and 382 °C. The corresponding kinetic parameters are calculated. The photoluminescence excitation spectrum at 247 and 364 nm monitored with 400 nm excitation and the corresponding emission peaks at 590, 612 and 624 nm are reported.     

Photoluminescence and EPR studies of BaMgAl10O17:Eu phosphor with blue-emission synthesized by the solution combustion method

A blue phosphor, BaMgAl₁₀O₁₇:Eu²⁺, has been synthesized in the furnace at a temperature of 500 °C by solution combustion method. The formation of the as-prepared BaMgAl₁₀O₁₇:Eu²⁺ phosphor was confirmed by the powder X-ray diffraction technique. The EPR spectrum exhibited an intense resonance signal centered at g=4.63 at 150 mT along with a number of resonances in the vicinity of g>2.0 and g<2.0. The number of spins participating in resonance (N) and the susceptibility (c) for the resonance signal at g=4.63 have been calculated as a function of temperature. The excitation spectrum of BaMgAl₁₀O₁₇:Eu²⁺ phosphor showed a strong peak near 336 nm (4f⁷ (⁸S)→5d¹(t_2g) transition) with a staircase like structure in the region 376-400 nm owing to crystal field splitting of the Eu²⁺ d-orbital. The 336 nm excitation produced a broad blue emission at 450 nm corresponding to 4f⁶5d→4f⁷ transition. PL studies reveal the two emission centers one at 450 nm and the other at 490 nm in this phosphor.     

A potential red phosphor LiGd(MoO4)2:Eu for light-emitting diode application

Eu³⁺-doped LiGd(MoO₄)₂ red phosphor was synthesized by solid-state reaction, and its photoluminescent properties were measured. The effect of Eu³⁺ doping concentration on PL intensity was investigated, and the optimum concentration of Eu³⁺ doped in LiGd(MoO₄)₂ was found to be 30 mol%. Compared with Y₂O₂S:0.05Eu³⁺, Na_0.5Gd_0.5MoO₄:Eu³⁺ and KGd(MoO₄)₂:Eu³⁺, the LiGd(MoO₄)₂:Eu³⁺ phosphor showed a stronger excitation band around 395 nm and a higher intensity red emission of Eu³⁺ under 395 nm light excitation. For the first time, intensive red light-emitting diodes (LEDs) were fabricated by combining phosphor and a 395 nm InGaN chip, confirming that the LiGd(MoO₄)₂:Eu³⁺ phosphor is a good candidate for LED applications.     

KBaPO4:Ln (Ln=Eu, Tb, Sm) phosphors for UV excitable white light-emitting diodes

This letter reports the novel three emission bands based on phosphate host matrix, KBaPO₄ doped with Eu²⁺, Tb³⁺, and Sm³⁺ for white light-emitting diodes (LEDs). The phosphors were synthesized by solid-state reaction and thermal stability was elucidated by measuring photoluminescence at higher temperatures. Eu²⁺-doped KBaPO₄ phosphor emits blue luminescence with a peak wavelength at 420 nm under maximum near-ultraviolet excitation of 360 nm. Tb³⁺-doped KBaPO₄ phosphor emits green luminescence with a peak wavelength at 540 nm under maximum near-ultraviolet excitation of 370 nm. Sm³⁺-doped KBaPO₄ phosphor emits orange-red luminescence with a peak wavelength at 594 nm under maximum near-ultraviolet excitation of 400 nm. The thermal stabilities of KBaPO₄:Ln (Ln=Eu²⁺, Tb³⁺, Sm³⁺), in comparison to commercially available YAG:Ce³⁺ phosphor were found to be higher in a wide temperature range of 25-300 °C.     

Synthesis and luminescence properties of red-emitting phosphors NaY0.87Eu0.13(WO4)1.2(MoO4)0.8

A series of NaY_1−yEu_y(WO₄)_2−x(MoO₄)_x (x=0−2 and y=0.06−0.15) phosphors have been prepared by a combustion route. X-ray powder diffraction, photoluminescence excitation and emission spectra were used to characterize the resulting samples. The excitation spectra of these phosphors show the strongest absorption at about 396 nm, which matches well with the commercially available n-UV-emitting GaN-based LED chip. Their emission spectra show an intense red emission at 616 nm due to the ⁵D₀→⁷F₂ electric dipole transition of Eu³⁺. As the Mo content increases, the intensity of the ⁵D₀→⁷F₂ emission of Eu³⁺ activated at wavelength of 396 nm increases and reaches a maximum when the relative ratio of Mo/W is 2:3. The intense red-emission of the tungstomolybdate phosphors at near-UV excitation suggests that the material is a potential candidate for white light emitting diode (WLEDs).     

Luminescence of Ce in Ca0.65La0.35F2.35 host

The title compound was prepared by precipitation followed by thermal annealing at 1000 °C. Photoluminescence of Ce³⁺ was studied. In this host, Ce³⁺ exhibits PL that is totally different from that observed for the constituent fluorides. For 5 mol% Ce, blue emission was observed with a maximum at 449 nm corresponding to near UV excitation. It is suggested that these characteristics can be useful for obtaining a low cost, blue phosphor for the solid state lighting using near UV LED.     

Luminescence and EPR studies of Eu doped BaAl12O19 blue light emitting phosphors

Europium doped BaAl₁₂O₁₉ powder phosphors have been synthesized by combustion process within few minutes. The phosphors have been characterized by XRD, SEM, FT-IR, EPR and PL techniques. The EPR spectrum exhibits an intense resonance signal at g=1.96 characteristic of Eu²⁺ ions. In addition to this two weak resonance signals have been observed at g=2.28 and g=4.86. The population of the spin levels (N) for the resonance signal at g=1.96 is calculated as a function of temperature. By post-treating the phosphor at 1350 °C under a reducing atmosphere, it is observed that the population of spin levels has been increased five times. The excitation spectrum shows a peak at 326 nm with a shoulder at 290 nm. Upon excitation at 326 nm, the emission spectrum exhibits a well defined broad band with maximum at 444 nm emitting a blue light corresponding to 4f⁶5d→4f⁷ transition. The luminescence intensity also has been enhanced to 60% by post-treating the phosphor at 1350 °C under a reducing atmosphere.     

Nanofibers and nanoplatelets of MoO3 via an electrospinning technique

Polyvinyl alcohol (PVA)/ammonium molybdate composite fibers were prepared by using sol-gel processing and electrospinning technique. After calcinations of the above precursor fibers at 500 °C, MoO₃ nanofibers with a diameter of 100-150 nm were successfully obtained. MoO₃ nanoplatelets and submicron platelets were prepared by further calcinations of the MoO₃ nanofibers at 600 and 700 °C. The products were characterized by X-ray diffraction (XRD), Fourier transform infrared spectroscopy (FT-IR) and scanning electron microscopy (SEM). A possible growth mechanism for the MoO₃ nanofibers and nanoplatelets was suggested.     

Sm-activated gadolinium molybdate: an intense red-emitting phosphor for solid-state lighting based on InGaN LEDs

Sm³⁺-activated gadolinium molybdate, Gd₂(MoO₄)₃:Sm³⁺ red-emitting phosphor was prepared by conventional solid-state method. The structure, morphology, and luminescent properties of these powder samples have been investigated by means of X-ray diffraction (XRD), scanning electron microscopy (SEM), and fluorescent spectrophotometry, respectively. The as-obtained phosphor has a monoclinic structure with single crystalline phase. Its mean particle size is about 6-8 μm with pseudo-pompon shape and large surface area, which is suitable for manufacture of white LEDs. The phosphor can be efficiently excited by incident light of 348-445 nm, well matched with the output wavelength of a near-UV InGaN-based chip, and re-emits an intense red light peaking at 650 nm. By combing this phosphor with a 405 nm-emitting InGaN chip, a red LED was fabricated, so that the applicability of this novel phosphor to white LEDs was confirmed. It is considered to be an efficient red-emitting conversion phosphor for solid-state lighting based on InGaN LEDs.     

KGd(MoO4)2:Eu as a promising red phosphor for light-emitting diode application

A red phosphor KGd(MoO₄)₂:Eu³⁺ was prepared by solid-state reaction technique at high temperature. Its photoluminescent property was investigated and the optimum concentration of Eu³⁺ doped in the KGd(MoO₄)₂ is 25 mol%. Compared with Y₂O₂S:0.05Eu³⁺, the obtained KGd(MoO₄)₂:Eu³⁺ shows wider excitation band around 400 nm, higher intensity of Eu^{3+ 5}D₀–⁷F₂ emission upon excitation 393 nm, and the CIE chromaticity coordinates (x = 0.655, y = 0.345) are closer to the standard of National Television Standard Committee (NTSC). The optical properties of KGd(MoO₄)₂:Eu³⁺ suggest that it is an efficient red-emitting phosphor for light-emitting diode applications.     

A new self-activated yellow-emitting phosphor Zn2V2O7 for white LED

A new self-activated yellow-emitting Zn₂V₂O₇ phosphor was synthesized by high temperature solid-state reaction. X-ray powder diffraction (XRD) analysis confirmed the sample with monoclinic formation of Zn₂V₂O₇. The excitation and emission spectra indicated the phosphor can be efficiently excited by near ultraviolet (NUV) light in 220–400 nm range and exhibit a bright broad yellow emission with the highest emission intensity at 531 nm. The broad emission band from 400 to 650 nm can be attributed to the charge transfer transition in the VO₄ tetrahedra, which suggests that the phosphor is a promising yellow phosphor applied for white light-emitting diodes (WLED).     

Synthesis and photoluminescence properties of Sm-doped CaWO4 nanoparticles

The Sm³⁺-doped CaWO₄ nanoparticles were synthesized by hydrothermal method. The room temperature photoluminescence (PL) spectra of Sm³⁺-doped CaWO₄ nanoparticles doped with different Sm³⁺ concentrations under 405 nm excitation have been investigated. The PL spectra showed four strong emission peaks at 460, 571, 609, and 653 nm. The first emission peak at 460 nm could be due to a structural defect of the lattice, an oxygen-deficient WO₃ complex. The other three emissions at 571, 609, and 653 nm were due to the f-f forbidden transitions of the 4f electrons of Sm³⁺, corresponding to ⁴G_5/2→⁶H_5/2 (571 nm), ⁶H_7/2 (609 nm), and ⁶H_9/2 (653 nm), respectively. In addition, the optimum Sm³⁺ concentration in CaWO₄ nanoparticles for optical emission was determined to be 1.0%. The Sm³⁺⁴G_5/2→⁶H_7/2 (609 nm) emission intensity of Sm³⁺-doped CaWO₄ nanoparticles significantly increased with the increase of Sm³⁺ concentration, and showed a maximum when Sm³⁺ doping content was 1.0%. If Sm³⁺ concentration continued to increase, namely more than 1.0%, the Sm³⁺⁴G_5/2→⁶H_7/2 emission intensity would decrease. The present materials might be a promising phosphor for white-light LED applications.     

Low temperature synthesis and superconducting properties of polycrystalline T′-(La,Sm)2CuO4

La_2−xSm_xCuO_4+δ with the Nd₂CuO₄ structure was synthesized by precipitation from fused alkaline hydroxide, CsOH, at 400 °C. The as-sintered polycrystalline samples showed no diamagnetic signal, but after post-annealing in vacuum of ≈10⁻⁸ atm at 650–700 °C, the samples with x = 0.1 and 0.3 exhibited superconductivity at T_c on = 25 K. The volume fraction of the superconducting phase estimated from the slope of the Zero-Field-Cooled magnetization data was over 30% for x = 0.3, which confirmed that the La_1.7Sm_0.3CuO_4+δ is a bulk superconductor.     

Low-voltage cathodoluminescence property of Li-doped Gd2−xYxO3:Eu

Cathodoluminescent (CL) spectra of Li-doped Gd_2−xY_xO₃:Eu³⁺ solid-solution (0.0?x?0.8) were investigated at low voltages (300 V-1 kV). The CL intensity is maximum for the composition of x=0.2 and gradually reduces with increasing the amount of substituted Y content. In particular, small (∼100 nm) particles of Li-doped Gd_1.8Y_0.2O₃:Eu³⁺ are obtained by firing the citrate precursors at only 650°C for 18 h. Relative red-emission intensity at 300 V of this phosphor is close to 180% in comparison with that of commercial red phosphor Y₂O₃:Eu³⁺. An increase of firing temperature to 900°C results in 400-600 nm sized spherical particles. At low voltages (300-800 V), the CL emission of 100 nm sized particles is much stronger than that of 400-600 nm sized ones. In contrast, the larger particles exhibit the higher CL emission intensity at high voltages (1-10 kV). Taking into consideration small spherical morphology and effective CL emission, Li-doped Gd_1.8Y_0.2O₃:Eu³⁺ appears to be an efficient phosphor material for low voltage field emission display.     

Ca1−xMo1−ySiyO4:Eux: A novel red phosphor for white light emitting diodes

Single phase of Ca_1−xMo_1−ySi_yO₄:Eu_x³⁺ (0.18?x?0.26, 0?y?0.04) was synthesized by solid-state method. The photoluminescence investigation indicated that Ca_1−xMoO₄:Eu_x³⁺ (0.18?x?0.26) could be effectively excited by 393 and 464 nm, and it exhibited an intense red emission at 615 nm. The introduction of Si⁴⁺ ions did not change the position of the peaks but strongly enhanced the emission intensity of Eu³⁺ under 393 and 464 nm excitations and showed very good color purity. The emission intensity of optimal Ca_0.8Mo_0.98Si_0.02O₄:Eu_0.2³⁺ sample (excited by 393 nm) was about 5.5 times higher than that of the phosphor Y₂O₂S:0.05Eu³⁺. So this phosphor could be nicely suitable for the application of the UV LED chips.     

Crystal structure and photoluminescence properties of Eu-activated Ba2LiB5O10 phosphors

A novel orange-yellow-emitting Ba₂LiB₅O₁₀:Eu²⁺ phosphor has been synthesized by traditional high temperature solid state reaction. A monoclinic crystal structure of Barium lithiumborates Ba₂LiB₅O₁₀ was verified by the investigation of X-ray diffraction (XRD). The compound crystallizes in the space group of P121/m1(11) (Z = 2) with the unit cell parameters a = 4.414(1) Å, b = 14.576(2) Å, c = 6.697(2) Å and β = 104.26(2)°. Barium and lithium atoms are located in distorted octahedral and tetrahedral oxygen coordinations, respectively. Upon around 365 nm excitation, the Eu²⁺-activated Ba₂LiB₅O₁₀ phosphors exhibit a single broad emission band with the maximum at about 587 nm, due to the 4f⁶5d → 4f⁷(8S_7/2) transition of Eu²⁺. This work investigates the relationship between luminescence properties and structural characterization of the Ba₂LiB₅O₁₀: Eu²⁺. This newly developed phosphor shows high potential as a phosphor conversion for white LED applications.