MBiO2Cl(M=Ca，Sr，Ba)材料的合成、能带计算及发光性能研究

采用固相合成方法制备出CaBiO₂Cl,SrBiO₂Cl和BaBiO₂Cl粉体,研究了该Sillen系列铋基氧卤化合物的光学带隙、电子结构及发光性能.基于密度泛函理论计算表明,SrBiO₂Cl和BaBiO₂Cl均为直接带隙半导体材料,与吸收光谱实验结果相符合.在X射线和紫外光激发下三者均具有宽的可见光发射带(400—550nm),尤其是BaBiO₂Cl粉体的光输出强度约为Bi 关键词： 光致发光 电子结构 Sillen化合物     

The luminescence properties of Eu2+ doped Na2CaMg(PO4)2 phosphor

The blue-emitting phosphors of Eu²⁺-doped Na₂CaMg(PO₄)₂ were prepared by high-temperature solid-state reaction. The crystal phase formation was confirmed by X-ray powder diffraction measurement. The luminescence properties were investigated by photoluminescence excitation and emission spectra. The phosphor exhibited the blue luminescence due to the 4f⁶5d¹→4f⁷ transition of Eu²⁺ ions under the excitation of near UV light. The influence of temperature on the luminescence intensities and decay lifetimes of Eu²⁺ was investigated. An unusual increase of the decay lifetimes of the 4f⁶5d emission of Eu²⁺ ion is observed in Na₂CaMg(PO₄)₂ from 10 K to room temperature. The thermal stability of the luminescence of Eu²⁺-doped Na₂CaMg(PO₄)₂ was discussed.     

Electroluminescence in CdF2 crystals

Electroluminescence is observed in CdF₂: Eu and CdF₂: Gd single crystals at liquid nitrogen temperature. The comparison of the emission spectra with those obtained from the same materials under X-ray excitation shows that the electric field stimulates either the intrinsic luminescence amd that due to the doping substance. The dependence of the brightness on the temperature is also reported and compared with the intrinsic luminescence efficiency. The effect is used for measuring the rare earth luminescence decay times.     

Optical spectroscopy of Ca3Sc2Si3O12, Ca3Y2Si3O12 and Ca3Lu2Si3O12 doped with Pr

The silicates Ca₃Sc₂Si₃O₁₂, Ca₃Y₂Si₃O₁₂ and Ca₃Lu₂Si₃O₁₂, both undoped and doped with Pr³⁺ ions, have been synthesized by solid-state reaction at high temperature. The luminescence spectroscopy and the excited state dynamics of the materials have been studied upon VUV and X-ray excitation using synchrotron radiation. All doped samples have shown efficient 5d-4f emission upon direct VUV excitation of 5d levels, but only Ca₃Sc₂Si₃O₁₂:Pr³⁺ shows luminescence upon interband VUV or X-ray excitation. The VUV excited emission spectra of Ca₃Y₂Si₃O₁₂:Pr³⁺ and Ca₃Lu₂Si₃O₁₂:Pr³⁺ show features attributed to emission from two distinct sites accommodating the Pr³⁺ dopant. The decay kinetics of the Pr³⁺ 5d-4f emission in Ca₃Sc₂Si₃O₁₂:Pr³⁺ upon VUV excitation across the band gap are characterized by decay times in the range 25-28 ns with no significant rise after the excitation pulse. They appear to be faster upon X-ray irradiation than for VUV excitation. Weak afterglow components are attributed to defect luminescence.     

Optical spectroscopy of heavily Ho-doped BaY2F8 crystals

The ultraviolet, visible, and near IR (0.8-2.4 μm) luminescence spectra of BaY₂F₈ single crystals heavily doped with Ho³⁺ ions (10 and 30 mol%) have been investigated at room temperature and 12 K, together with the luminescence decay curves (up to 300 μs) of the visible emission. Excitation in the visible region gives rise to very strong emission bands originating from the first ⁵I₇ level and located around 2070 nm. However the ⁵I₇ emission is not observed upon excitation at wavelengths shorter than 300 nm. The inter-ionic processes are found to shorten the decay times of the levels emitting in the visible region with respect to the corresponding radiative lifetimes.     

Decay pathway and high-temperature luminescence of Eu in Ca2Gd8Si6O26

The temperature-dependent luminescence of Eu:Ca₂Gd₈Si₆O₂₆ and its decay pathways are investigated in order to assess the utility of the material as a thermometric phosphor. Non-radiative decays are found to compete with radiative processes even at room temperature. A decay pathway involving decay through charge-transfer states is proposed based on the decay profiles of emissions from ⁵D₁ and ⁵D₀ levels and on the temperature sensitivity of the spectra as observed after excitation by several wavelengths. The implications of this on solid-state lighting are also discussed.     

Temperature-dependence of the structural and afterglow luminance properties of polymer/SrAlxOy:Eu,Dy composites

Although aluminate phosphors have attracted great interest for applications in lamps, cathode ray tubes and plasma display panels, there still remain issues affecting operational parameters such as luminescence efficiency, stability against temperature, high color purity and perfect decay time. In addition, issues involving important aspects of the monoclinic↔hexagonal phase transition temperature still exist. In this work, SrAl_xO_y:Eu²⁺,Dy³⁺ phosphor powders were prepared by the sol–gel method. X-ray diffraction (XRD) has shown that both crystallinity and crystallite sizes increased as the temperature increased. Both SrAl₂O₄ and Sr₂Al₃O₆ phases were observed. Photoluminescence (PL) characterization shows temperature-dependence, which indicates emission at low and high annealing temperatures originating from Eu²⁺ and Eu³⁺ ions. Thermoluminescence glow and decay measurements provided useful insight on the influence of traps on luminescence behavior. Differential scanning calorimetry (DSC) and thermogravimetric studies (TGA) on composites of the phosphor in low density polyethylene (LDPE) demonstrated the varied influence of annealing temperature on some luminescence and thermal properties.     

Synthesis and Sm/Sm doping effects on photoluminescence properties of Sr4Al14O25

Complete and partial samarium reduction was achieved under strong reducing atmosphere by solid-state and combustion synthesis of Sr_3.96Sm_0.04Al₁₄O₂₅. Dependence of different fluxing agents on the formation of various strontium aluminates was examined. The samples were investigated by X-ray powder diffraction, temperature dependent luminescence decay and photoluminescence measurements. Excitation with UV radiation resulted in sharp and well resolved emission lines of samarium ions. Distinct temperature behavior for Sm²⁺ and Sm³⁺ were detected in the range of 100-500 K. Estimated emission thermal quenching values (TQ_1/2) for divalent samarium were approximately 270 K while for trivalent state around 660 K. Measured luminescence decay values of Sm²⁺ are substantially lower than for Sm³⁺,≈1.7 and ≈2.7 ms, respectively. The spectral feature of Sm²⁺ emission spectrum indicates that dopant occupies low symmetry site in Sr₄Al₁₄O₂₅ compound.     

Scintillation and anomalous emission in elpasolite Cs2LiLuCl6:Ce

The luminescence and scintillation properties of Cs₂LiLuCl₆:0.5%Ce³⁺ are presented. Special attention is devoted to a 9.4 ns fast emission at 275 nm that can only be excited via the highest cubic field 5d_e state of Ce. Contrary to Cs₃LuCl₆ and Cs₂LiYCl₆, where the same type of fast emission was observed, the emission in Cs₂LiLuCl₆ is still observed at room temperature. Assuming that the 5d_e state is located inside the host conduction band (CB), we propose that the emission originates from a mixed state at or just below the bottom of the CB and ends at the 4f ground state of Ce³⁺. To proof this model we studied the thermal quenching of the anomalous luminescence and performed X-ray photoelectron spectroscopy. A model for a temperature-activated energy transfer from the anomalous state to the lowest 5d_t excited state of Ce³⁺ explains most of the results. Besides the 275 nm emission, the material shows 5d_t-4f Ce³⁺ emission at 370 and 406 nm and 2 ns fast core-valence luminescence when excited with 16-22 eV photons. The scintillation properties of Cs₂LiLuCl₆:Ce are briefly discussed.     

Near-infrared luminescence of OH and Cl doped Bi4Ge3O12 crystals

OH⁻ and Cl⁻ doped Bi₄Ge₃O₁₂ (BGO) single crystals had been grown by Vertical Bridgman (VB) method. The structure of these crystals was determined by XRD, the transmittance and emission spectra in near infrared region (NIR) were measured at room temperature. 5% OH⁻ doped BGO shows a significant emission band peaking around 1181 nm under 808 nm laser diodes (LDs) excitation, and the 5% Cl⁻ doped BGO exhibits a relatively weak emission band as well. 100% and 5% OH⁻ doped BGO show noticeable emission band centered at about 1346 nm under 980 nm LDs excitation.     

Emission characteristics of diameter controlled SnO2 nanowires

SnO₂ nanowires with controlled diameters were grown by chemical vapor deposition process for which four different diameters ranging from 50 to 140 nm were grown by the controlling thickness of gold-thin-films as catalysts. The influence of the diameter-to-thickness ratio as well as the mechanism of its formation was studied. The relationship between photoluminescence intensities and aspect ratio with considering surface effects of SnO₂ nanowires was also investigated. The room temperature luminescence intensity was diminished with decreasing the diameter of nanowires due to the increasing surface/volume ratio. The transition energy and emission intensity show abnormal behavior as temperature decreased from room temperature to 5 K.     

The luminescence of Bi2Ge3O9

The luminescence properties of a new bismuth germanate (Bi₂Ge₃O₉) are reported and discussed in terms of intrinsic Bi³⁺ emission.     

Spectroscopic properties of OH doped and Bi-rich Bi4Ge3O12 crystals by vertical Bridgman method

OH⁻ doped and Bi-rich Bi₄Ge₃O₁₂ (BGO) single crystals were grown by Vertical Bridgman (VB) method. The structure of these crystals was determined by XRD, and the emission spectra in visible and near infrared region (NIR) were measured at room temperature. The emission spectrum of Bi-rich BGO has extra peaks at 385, 367 and 357 nm, Bi-rich BGO after annealing in Ar at 500 °C for 5 h shows a significant emission band peaking around 1170 nm under 808 nm laser diodes (LDs) excitation, and OH⁻ doped BGO shows a noticeable emission band centered at about 1346 nm under 980 nm LDs excitation. A brief discussion is presented.     

红色Bi4 Ge3 O12晶体在低温下的发光性能

用下降法制备了Bi₄Ge₃O₁₂晶体,发现生长出来的圆柱状晶体外侧呈现淡红色。对红色Bi₄Ge₃O₁₂晶体进行了低温(至8 K)下的近红外发射光谱及衰减寿命等测试分析。发现低温时(200 K以下)红色Bi₄Ge₃O₁₂在1 150 nm等波长处有较强的发射峰,强度随温度降低而增强,衰减时间为几百μs。     

Excitation spectroscopy on the M-band of red HgI2

The luminescence of red HgI₂ is investigated as a function of excitation intensity and -wavelength. At low excitation, emission is due to free and bound exciton recombination, at high levels a “M-band” is dominating. This M-band is partially ascribed to biexciton decay, this assumption being supported by resonances found in the excitation spectra. The biexciton binding energy is determined to be 6±1 meV.     

Optical spectroscopy of Yb/Er codoped NaY(WO4)2 crystal

Erbium and ytterbium codoped double tungstates NaY(WO₄)₂ crystals were prepared by using Czochralski (CZ) pulling method. The absorption spectra in the region 290-2000 nm have been recorded at room temperature. The Judd-Ofelt theory was applied to the measured values of absorption line strengths to evaluate the spontaneous emission probabilities and stimulated emission cross sections of Er³⁺ ions in NaY(WO₄)₂ crystals. Intensive green and red lights were measured when the sample were pumped by a 974 nm laser diode (LD), especially, the intensities of green upconversion luminescence are very strong. The mechanism of energy transfer from Yb³⁺ to Er³⁺ ions was analyzed. Energy transfer and nonradiative relaxation played an important role in the upconversion process. Photoexcited luminescence experiments are also fulfilled to help analyzing the transit processes of the energy levels.     

Structure and photoluminescence properties of Er3+-doped TiO2-SiO2 powders prepared by sol-gel method

Er 3+-doped TiO 2-SiO 2 powders are prepared by the sol-gel method,and they are characterized by high resolution transmission electron microscopy (HR-TEM),X-ray diffraction (XRD) spectra,and Raman spectra of the samples.It is shown that the TiO 2 nanocrystals are surrounded by an SiO 2 glass matrix.The photoluminescence (PL) spectra are recorded at room temperature.A strong green luminescence and less intense red emission are observed in the samples when they are excited at 325 nm.The intensity of the emission,which is related to the defect states,is strongest at the annealing temperature of 800 C.The PL intensity of Er 3+ ions increases with increasing Ti/Si ratio due to energy transfer between nano-TiO 2 particles and Er 3+ ions.     

Fluorescence properties of Bi4Ge3O12(BGO) single crystals under laser excitation: Excited state dynamics and saturation effects

Laser-excited techniques were used to investigate the optical properties of bismuth germanate crystals. Absorption, reflectivity, excitation, emission, lifetime, time-resolved fluorescence, photoconductivity, thermally stimulated conductivity measurements were performed at various temperatures on single crystals of different origins.The absorption is shown to occur in bismuth and germanate centers while both intrinsic and perturbed Bi³⁺ ions together with impurities contribute to the total fluorescence.The emission mechanism at room temperature involves a thermally activated energy migration, and at low temperature localized emitting centers. Formation of deep holes in the wide emission band at room temperature reveals saturation effects on various luminescent centers, promoted by energy migration. Trapped exciton models are proposed to explain the excited state dynamics occurring at low and room temperature.     

Intrinsic defect related luminescence in ZrO2

The studies of ZrO₂ and yttrium stabilized ZrO₂ nanocrystals luminescence as well as yttrium stabilized single crystal luminescence and induced absorption showed that the intrinsic defects are responsible for luminescence at room temperature. These defects form a quasi-continuum of states in ZrO₂ band gap and are the origin of the luminescence spectrum dependence on the excitation energy. Luminescence centers are oxygen vacancies related but not the vacancies themselves. At room temperature, in ZrO₂, deep traps for electrons and holes exist. The oxygen vacancies are proposed to be the traps for electrons.     

Luminescence spectroscopy of Ti ions in Li2O-CaF2-P2O5 glass ceramics

Li₂O-CaF₂-P₂O₅ glasses mixed with different concentrations of TiO₂ (ranging from 0 to 0.8 mol%) were crystallized at 500 °C. The photo luminescence spectra of these samples excited with the wavelengths corresponding to their absorption edges have been recorded at room temperature. The spectra exhibited an emission band in the wavelength region 470-500 nm. The emission band is identified due to the charge transfer from O²⁻ ion in to empty 3d orbital of octahedrally positioned Ti⁴⁺ ions. The analysis of the results further indicates the highest luminescence efficiency for the glass ceramic sample crystallized with 0.6 mol% of TiO₂.