Amplification assisted optical parametric oscillator in the mid-infrared region

We demonstrate a high efficiency mid-infrared laser source based on optical parametric oscillator (OPO) assisted by an intracavity optical parametric amplification (OPA). The OPA-assisted-OPO scheme was realized in one piece of commensurable dual-periodic superlattice in which the signal light generated from the OPO process serves as the pump light for the OPA process. A maximum output power of 508 mW at 3.92 μm was achieved under a pump power of 2.85 W at 1.064 μm. The pump-to-idler conversion efficiency is 17.8% and the slope efficiency is 23.8%, and the enhancements of them are 58.9% and 67.6%, respectively, comparing with the standard OPO scheme.     

Quasi-monolithic ring resonator for efficient frequency doubling of an external cavity diode laser

A quasi-monolithic second-harmonic-generation ring resonator assembled with miniaturized components is presented. The ring contains a 10-mm-long bulk periodically poled lithium niobate crystal for second-harmonic generation, four plane mirrors and two gradient-index lenses. All parts are mounted on a glass substrate with an overall size of 19.5 mm×8.5 mm×4 mm. As pump source a broad-area laser diode operated in an external resonator with Littrow arrangement is utilized. This external cavity diode laser provides near diffraction limited, narrow-bandwidth emission with an optical output power of 450 mW at a wavelength of 976 nm. Locking of the diode laser emission to the resonance frequency of the ring cavity was achieved by an optical self-injection locking technique. With this setup more than 126 mW of diffraction-limited blue light at 488 nm could be generated. The opto–optical conversion efficiency was 28% and a wall plug efficiency better than 5.5% could be achieved.     

Recent progress in the development of type II interband cascade lasers

Type-II interband cascade lasers combine the advantage of an interband optical transition with interband tunneling to enable the cascading of type-II quantum well active regions as is done in type-I quantum cascade laser. The relatively high radiative efficiency resulting from interband optical transitions translates into very low-threshold current densities, and when combined with the high quantum efficiency of cascade lasers, this diode laser design has the potential to operate under cw conditions at room temperature with high output power. Experimental results have already demonstrated some of this potential including high differential external quantum efficiency (>600%), high peak output power (6 W/facet at 80 K), high cw power conversion efficiency (>17% at 80 K), and operation at 300 K under pulsed conditions. Recent work aimed at reducing device thermal resistance and increasing cw operating temperature is reviewed including the demonstration of significant reductions in thermal resistance (averaging 25 K/W or 40% for 1-mm-long devices), 80 K cw operation at 3.4 μm with high-power conversion efficiency (23%) and high differential external quantum efficiency (532%), and cw operation up to 214 K.     

Continuous-wave single-frequency 532 nm laser source emitting 130 W into the fundamental transversal mode

The nonlinear effect of second-harmonic generation is an efficient way to realize high-power green laser sources. But when scaling up the harmonic power, many setups reported in the literature have been limited by conversion efficiency degradation or the fundamental laser power. Here we report on the generation of 134 W of cw laser light at a wavelength of 532 nm from a fundamental power of 149 W by second-harmonic generation in an external optical resonator comprising a lithium triborate crystal. The external conversion efficiency was 90%. The harmonic light consisted of a single spectral line. At least 97% of it was emitted into the fundamental transversal mode.     

Silicon–germanium nanostructures for on-chip optical interconnects

Silicon–germanium epitaxially grown on silicon in the form of two-dimensional (quantum wells) and three-dimensional (quantum dots) nanostructures exhibits photoluminescence and electroluminescence in the technologically important spectral range of 1.3–1.6 μm. Until recently, the major roadblocks for practical applications of these devices were strong thermal quenching of the luminescence quantum efficiency, and a long carrier radiative lifetime. This paper summarizes recent progress in the understanding of carrier recombination in Si/SiGe nanostructures and presents a potential new route toward CMOS compatible light emitters for on-chip optical interconnects.     

QCW diode-side-pumped Nd:YAG ceramic laser with 247 W output power at 1123 nm

We demonstrate for the first time a diode-side-pumped quasi-continuous-wave (QCW) operation of a 1123 nm Nd:YAG ceramic laser. The single 1123 nm wavelength is acquired through precise coating. With a pump power of 1000 W, an output power of 247 W is obtained, corresponding to an optical–optical conversion efficiency of 24.7%. At the maximal output power, the pulse repetition rate and pulse width are measured to be 1.1 kHz and 180 μs, respectively. The numerical simulations for wavelength selectivity from 1112, 1116 and 1123 nm are discussed in detail.     

Highly efficient double-ended diffusion-bonded Nd:YVO4 1525-nm eye-safe Raman laser under direct 880-nm pumping

A highly efficient 880-nm diode-pumped actively Q-switched eye-safe laser at 1525 nm with a double-ended diffusion-bonded YVO₄–Nd:YVO₄–YVO₄ crystal as the self-Raman medium is demonstrated. As high as 19.2% diode-to-Stokes optical conversion efficiency is obtained with an absorbed pump power of 5.2 W at a pulse repetition rate of 20 kHz.     

White organic light-emitting diodes based on benzothiazole derivative

This paper describes the white organic light-emitting diodes (WOLEDs) made from a benzothiazole derivative, N-(4-(benzo[d]thiazol-2-yl)phenyl)-N-phenylnaphthalen-1-amine (BPNA). The bright yellowish-white emission was obtained from a non-doped triple-layer device: ITO/NPB (40 nm)/BPNA (50 nm)/Alq₃ (40 nm)/LiF/Al. The Commission Internationale de L’Eclairage (CIE) coordinates of the device were (0.24, 0.36) at 10 V. The maximum brightness of the device was 9225 cd/m² at 14.4 V. A current efficiency of 3.08 cd/A, a power efficiency of 1.21 lm/W and an external quantum efficiency of 1.18% at a driving current density of 20 mA/cm² were achieved. WOLED with a DCJTB-doped structure of ITO/TcTa/BPNA/BPNA: DCJTB (0.5%)/BPNA/BCP/Alq₃/LiF/Al was fabricated in comparison with the non-doped device. The device emitted bright white light with the CIE coordinates of (0.33, 0.29) at 10 V and a maximum luminance of 7723 cd/m² at 14.8 V.     

Bulk crystal SiC blue LED with p–n homojunction structure fabricated by dressed-photon-phonon–assisted annealing

To fabricate a high-efficiency light emitting diode using indirect-transition-type bulk crystal SiC having a p–n homojunction structure, annealing was performed using stimulated emission via dressed photons generated at the inhomogeneous domain boundaries of Al dopant sites. This device emitted electroluminescence (EL) due to a two-step transition process via dressed-photon–phonons generated at the inhomogeneous domain boundaries of the Al dopant sites. The EL emission peak wavelength was 480–515 nm when the device was driven by a direct current and 390 nm when driven by a pulsed current. The external quantum efficiency of the EL emission was 1 %, and the internal quantum efficiency was as high as 10 %.     

A stochastic modeling of morphology formation by optical near-field processes

We previously reported (S. Yukutake et al. in Appl. Phys. B 99:415, 2010) that by depositing Ag particles on the electrode of a photovoltaic device composed of poly(3-hexylthiophene) (P3HT) and ZnO under light illumination (wavelength λ=660 nm) while reversely biasing the P3HT/ZnO p–n junction, a unique granular Ag film was formed. The resultant device generated a photocurrent at wavelengths as long as 670 nm, which is longer than the long-wavelength cutoff λ _c (=570 nm) of P3HT. Such an effect originates from a phonon-assisted process induced by an optical near field. In this paper, we analyze the morphological character of the Ag clusters and build a stochastic model in order to understand the principles behind the self-organized pattern formation process. The modeling includes the geometrical character of the material, its associated optical near fields, and the materials that flow in and out of the system. The model demonstrates behavior consistent with that observed in the experiment. We can see these phenomena as a new kind of self-organized criticality taking account of near-field effects, which will provide an insight into the analysis and design of future nanophotonic devices.     

High-power 888-nm-pumped Nd:YVO4 1342-nm oscillator operating in the TEM00 mode

We report on a high-power 888-nm-pumped continuous-wave Nd:YVO₄ laser at 1342 nm. An output power of 24 W emitted into a diffraction limited beam with an M ² parameter better than <1.1 is demonstrated. At an absorbed pump power of 84 W the optical conversion efficiency is 29%.     

Si homojunction structured near-infrared laser based on a phonon-assisted process

We fabricated several near-infrared Si laser devices (wavelength ～1300 nm) showing continuous-wave oscillation at room temperature by using a phonon-assisted process induced by dressed photons. Their optical resonators were formed of ridge waveguides with a width of 10 μm and a thickness of 2 μm, with two cleaved facets, and the resonator lengths were 250–1000 μm. The oscillation threshold currents of these Si lasers were 50–60 mA. From near-field and far-field images of the optical radiation pattern, we observed the high directivity which is characteristic of a laser beam. Typical values of the threshold current density for laser oscillation, the ratio of powers in the TE polarization and TM polarization during oscillation, the optical output power at a current of 60 mA, and the external differential quantum efficiency were 1.1–2.0 kA/cm², 8:1, 50 μW, and 1 %, respectively.     

Non-collinear nanosecond optical parametric oscillator based on periodically poled LN with tilted domain walls

We report on a non-collinear, 1064 nm pumped, 10 kHz repetition rate ns-OPO which consists of a 13 mm long periodically poled lithium niobate (PPLN) crystal in a hemispherical optical cavity. The non-collinear phase-matching is achieved by tilting the domains by 60° with respect to the pump beam. This phase-matching avoids back conversion of signal and idler radiation into pump radiation and thus improves the spatial quality of the generated OPO radiation considerably. At a pump power of 5.5 W the OPO provided a conversion efficiency of up to 34%. The generated OPO pulses with a total power of up to 1.85 W were emitted in an almost diffraction limited beam with a M²-value of 1.1. The beam quality did not change when the pump power was varied in the range of 2–5 W. PACS 42.65.-k; 42.65.Yj     

High-efficiency mid-infrared laser from synchronous optical parametric oscillation and amplification based on a single MgO:PPLN crystal

This paper presents a specially designed optical parametric oscillator (OPO) which achieved high-efficiency mid-infrared laser of 2.83 μm. The cascaded nonlinear interactions of OPO and optical parametric amplifier (OPA) were simultaneously realized in a single MgO:PPLN crystal. The signal oscillation of 1.70 μm was used to pump a secondary parametric process that resulted in amplification of the idler laser of 2.83 μm. When the MgO:PPLN crystal with a grating period of 31.2 μm was pumped by a 1.064 μm laser and operated at 148°C, the quasi-phase-matching of both OPO and OPA could be simultaneously achieved. Average output power of 7.68 W at 2.83 μm was obtained for 25 W of pump at 7 kHz. The power conversion efficiency of 2.83 μm laser was 30.7%, which was evidently higher than common OPOs.     

High-conversion-efficiency and tunable phase-stabilized infrared parametric laser source

High-conversion-efficiency and tunable self-phase-stabilized infrared laser pulses have been generated from a two-stage optical parametric amplifier. With a 1 kHz repetition rate 800 nm pump source, the output idler pulses are tunable from 1.2 to 2.4 μm, and the maximum output average power of the idler pulses is >2 W with the total 7.4 W pump power, and the maximum parametric conversion efficiency in the final optical parametric amplifier is near 60%. Due to the differential frequency process, the output idler pulses is self-phase-stabilized, the phase fluctuation can reach 0.374 rad (rms).     

Measurement of strong photon recycling in ultra‐thin GaAs n/p junctions monolithically integrated in high‐photovoltage vertical epitaxial heterostructure architectures with conversion efficiencies exceeding 60%

Photon‐recycling effects are studied experimentally in photovoltaic power converting III–V semiconductor devices designed with the vertical epitaxial heterostructure architecture (VEHSA). The responsivity of VEHSA structures with multiple thin GaAs n/p junctions is measured for various optical input powers and for different wavelength detuning values with respect to the peak of the spectral response. While the detuning of the optical excitation decreases the external quantum efficiency and the responsivity at low input powers, this study demonstrates that at high optical intensities, a large fraction of the performance can be recovered despite significant detuning values. The photon coupling effects therefore broaden the spectral range for which the VEHSA devices convert high‐power optical inputs with high efficiencies into an electrical output having a preset voltage. The devices exhibit a near optimum responsivity of up to 0.645 A/W for tuned excitation conditions or at high optical intensities for spectral detuning values of up to ～25 nm and corresponding to an external quantum efficiency of ～94%. Efficiencies of 62.0% and 61.8% have been obtained for current‐matched excitations and for a detuning of >10 nm, respectively. An output power of 5.87 W is reported and an open circuit voltage enhancement of 92 meV per n/p junction is measured compared to a device with a side by side planar architecture. (© 2016 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim)     

Performance of actively Q-switched Nd:LiLuF<Subscript>4</Subscript> crystal end-pumped by a 792 nm laser diode

An efficient laser diode end-pumped continuous-wave (CW) and AO Q-switched laser of Nd:LiLuF₄ crystal with dual central wavelengths of 1053.1 and 1054.7 nm is reported for the first time. The maximum CW output power of 6.22 W was obtained at absorbed pump power of ∼14.6 W with the output transmission of 2%. The optical conversion efficiency is ∼43%, corresponding to a slope efficiency of about 48% with respect to the absorbed pump. For the Q-switched operation, the shortest pulse width of 17 ns was obtained at the pulse repetition frequency (PRF) of 0.5 kHz, resulting in a pulse energy of 2.24 mJ and peak power of 131.8 kW.     

Nonadiabatic nondegenerate excitation by optical near-field and its application to optical pulse-shape measurement

Using DCM dye grains and light of different wavelengths generated by two CW laser diodes that oscillate in the near-infrared wavelength region, visible light emission from dye grains due to near-infrared excitation based on a nonadiabatic, nondegenerate excitation process was observed for the first time. Unlike sum-frequency generation with nonlinear polarization, the difference in polarization angles of the two beams did not affect the emitted light intensity. Optical sampling based on this nonadiabatic, nondegenerate excitation principle was demonstrated for the first time. The optical pulse shape in the wavelength band of λ=1250–1350 nm, which is close to the wavelength range used for optical fiber communications, was measured with a temporal resolution of 0.8–1.1 ps.     

Light emitting devices based on silicon nanostructures

In this paper, we summarize the results of an extensive investigation on the properties of MOS-type light emitting devices based on silicon nanostructures. The performances of crystalline, amorphous and Er-doped Si nanostructures are presented and compared. We show that all devices are extremely stable and robust, resulting in an intense room temperature electroluminescence (EL) at around 900 nm or at 1.54 μm. Amorphous nanostructures may constitute an interesting system for the monolithic integration of optical and electrical functions in Si ULSI technology. In fact, they exhibit an intense room temperature EL with the advantage to be formed at a temperature of only 900 °C, remarkably lower than the temperature needed for the formation of Si nanocrystals (1100 °C or higher). To improve the extraction of the light, we coupled the emitting system with a 2D photonic crystal structure properly fabricated with ULSI technology to reduce the total internal reflection of the emitted light. We demonstrate that the extraction efficiency is increased by a factor of 4. Finally, the light emission from devices based on Er-doped Si nanoclusters has been studied and in particular we have investigated the luminescence quenching processes limiting quantum efficiency in these devices. In fact the carrier injection, that determines the excitation of Er ions through electron–hole recombination, at the same time produces an efficient non-radiative Auger de-excitation with trapped carriers. These data are presented and the implications on the device performances discussed.     

1.06 μm InGaAs/InGaAsP量子阱半导体激光器的温度特性

研究了1.06 μm InGaAs/InGaAsP量子阱半导体激光器厘米bar模块的温度特性,测试分析了该模块的输出光功率、阈值电流、转换效率和光谱随注入电流及管芯温度变化的特性。结果表明,器件在15~55 ℃范围内所测的输出光功率由40.7 W降低到29.4 W,阈值电流由9.29 A升高到17.24 A,转换效率由54.22%降低到37.55%,光谱漂移为0.37 nm/℃,特征温度为68.6 K。实验结果表明,为保持器件性能的稳定,在实际应用过程中应该使器件的温度控制在15~25 ℃范围内。