Coherent control of quantum entropy via quantum interference in a four-level N-type atomic system

The time evaluation of quantum entropy in a four-level N-type atomic system is theoretically investigated. Quantum entanglement of the atom and its spontaneous emission fields is then discussed via quantum entropy. It is found that the degree of entanglement can be increased by the quantum interference induced by spontaneous emission. The phase dependence of the atom-field entanglement is also presented.     

Entropies associated with electron emission from InAs/GaAs quantum dots

Entropies associated with the transition of electrons into and out of InAs/GaAs quantum dots (QDs) are calculated by considering the temperature dependence of energy eigenvalues due to strain and energy band offset variations. It is found that, for InAs/GaAs quantum dots with base/height dimensions of 20/10 nm, the contribution from the surrounding lattice to entropy is smaller than for the temperature region below 100 K, where most measurements of thermal emission rates are performed. Including the electron degeneracy, the total entropy change has an upper limit of when releasing the first electron from the s-shell, while the second released s-electron is connected with an entropy change not larger than the absolute value of .     

GaAs半导体量子箱中电子的斯塔克效应

在有效质量近似下,利用变分法研究了在GaAs半导体量子箱中电子能量的斯塔克效应.结论表明：电场平行于量子箱的中心轴时,斯塔克能移只与量子箱高度有关;电场垂直于中心轴时,斯塔克能移仅仅与它的截面尺寸有关.当电场方向与中心轴夹角为任意角时,斯塔克能移与高度和截面都有关.同时在低场和高场极限下,理论上分析了电场大小和量箱尺寸对斯塔克能移的影响.     

GaAs半导体量子箱中电子的斯塔克效应

在有效质量近似下,利用变分法研究了在GaAs半导体量子箱中电子能量的斯塔克效应.结论表明:电场平行于量子箱的中心轴时,斯塔克能移只与量子箱高度有关;电场垂直于中心轴时,斯塔克能移仅仅与它的截面尺寸有关.当电场方向与中心轴夹角为任意角时,斯塔克能移与高度和截面都有关.同时在低场和高场极限下,理论上分析了电场大小和量箱尺寸对斯塔克能移的影响.     

Enhanced emission of single quantum dot formed by interface fluctuations in photonic-crystal microcavities

We fabricated photonic-crystal (PhC) microcavities tuned to GaAs quantum dots (QDs) formed by interface fluctuation for the first time and observed the spontaneous emission enhancement in a weak coupling regime. A QD is a very thin GaAs quantum well (QW), and its interface steps exhibit quantum dot-like behavior. The emission intensity from the PhC cavity was stronger than that from the area where no PhC pattern was fabricated and the overall shape of the photoluminescence (PL) agreed with the cavity mode calculated with the three-dimensional (3D) finite-difference time domain (FDTD) method. The spontaneous emission enhancement factor was 10.     

Wetting layers effect on InAs/GaAs quantum dots

FEM combining with the K·P theory is adopted to systematically investigate the effect of wetting layers on the strain-stress profiles and electronic structures of self-organized InAs quantum dot. Four different kinds of quantum dots are introduced at the same height and aspect ratio. We found that 0.5 nm wetting layer is an appropriate thickness for InAs/GaAs quantum dots. Strain shift down about 3%∼4.5% for the cases with WL (0.5 nm) and without WL in four shapes of quantum dots. For band edge energy, wetting layers expand the potential energy gap width. When WL thickness is more than 0.8 nm, the band edge energy profiles cannot vary regularly. The electron energy is affected while for heavy hole this impact on the energy is limited. Wetting layers for the influence of the electronic structure is obviously than the heavy hole. Consequently, the electron probability density function spread from buffer to wetting layer while the center of hole's function moves from QDs internal to wetting layer when introduce WLs. When WLs thickness is larger than 0.8 nm, the electronic structures of quantum dots have changed obviously. This will affect the instrument's performance which relies on the quantum dots' optical properties.     

Disorder-induced natural quantum dots in InAs/GaAs nanostructures

Properties of excitons confined to potential fluctuations due to indium distribution in the wetting layer which accompany self-assembled InAs/GaAs quantum dots are reviewed. Spectroscopic studies are summarized including time-resolved photoluminescence and corresponding single-photon emission correlation measurements. The identification of charge states of excitons is presented which is based on results of a theoretical analysis of interactions between the involved carriers. The effect of the dots’ environment on their optical spectra is also shown.     

Coulomb charging effect of electrons in InAs/InAlAs quantum dots studied by capacitance techniques

Capacitance-voltage and deep level transient spectroscopy were used to study the capture characteristics of self-assembled InAs/InAlAs quantum dots grown on the InP substrate. It is found that the number of electrons captured by quantum dots can be controlled by varying the width of applied pulse voltage in the DLTS measurements. The Coulomb charging energy and the time of capture can be deduced from the filling time dependent deep level transient spectra.     

Observation of monolayer-splitting for InAs/GaAs quantum dots

A pronounced modulation is observed in the photoluminescence (PL) spectrum of self-organized InAs/GaAs quantum dots (QDs), recorded at low excitation densities. The clearly distinguishable peaks are identified as a multimodal distribution of the ground state transition energy, originating from a discrete, stepwise variation of the structural properties of the QDs, which is associated with an increase of the QD height in monolayer (ML) steps. The observation of a ML splitting implies a flat QD shape with well-defined upper and lower interfaces as well as negligible indium segregation. The electronic properties of the InAs/GaAs QDs were investigated by PL and PL-excitation spectroscopy and are discussed based on realistic calculations for flat InAs/GaAs QDs with a truncated pyramidal shape based on an extended 8-band k·p model. The calculations predict a red shift of the ground state transition with each additional ML, which saturates for heights above 9 ML, is in good agreement with experiment.     

Approximate analytic expressions for calculation of spontaneous emission spectra for a quantum well embedded in a planar microcavity

The control of spontaneous emission is one of important characteristics of a planar microcavity. The integrals in the spherical coordinate for TE and TM modes spontaneous emission spectra of a quantum well (QW) embedded in a planar microcavity are derived with new variables dependent on wavelength and Taylor series including the two polarizations of the vacuum field. The approximate expressions of spontaneous emission in QW planar microcavities are obtained. The approximate results show that spontaneous emission spectra agree well with that in the numerical integral for planar semiconductor microcavities, in which Fermi-Dirac distribution functions of electrons and holes are considered. The main contribution to the spontaneous emission, radiated into all direction, has been found.     

Observation of the quantum Hall effect in cleaved InAs surfaces

We have performed the in-plane magnetotransport measurements on the two-dimensional electron gas at the cleaved p-InAs (1 1 0) surface by deposition of Ag. The surface electron density N_s is determined from the Hall coefficient at . The coverage dependence of N_s is well explained by the assumption that each adsorbed Ag atom denotes one electron into InAs until the surface Fermi level reaches the adsorbate-induced donor level. The electron mobility μ is about and does not show a clear dependence on the coverage over . In the high-magnetic field regime of B>1/μ, Shubnikov–de Hass oscillations were observed. A beating pattern due to the strong spin–orbit interaction appears for high N_s. For lower N_s of , an apparent quantum Hall plateau for ν=4 and vanishing of the longitudinal resistivity were observed around .     

Carrier relaxation dynamics in InAs/InGaAlAs quantum dashes

We characterize size-dependent carrier relaxation dynamics of partial laser structures containing quantum dashes by time-resolved degenerate four wave mixing between 1.2 and 1.6 μm.     

AlGaAs capping effect on InAs quantum dots self-assembled on GaAs

The effects of AlGaAs capping on InAs quantum dots self-assembled on GaAs are investigated. It is observed that, the photoluminescence intensity becomes stronger up to twice when Al is incorporated into the cap layer. In the mean time, the full width at half maximum of the photoluminescence spectrum becomes narrower, the peak splitting between the ground and first excited exciton levels becomes wider, and the photoluminescence peak wavelength becomes longer. With considerations of the increased barrier height and the changed microstructures of the quantum dots induced by AlGaAs capping, the mechanisms of the observed improvements are discussed.     

Hydrostatic pressure effects on exciton states in InAs/GaAs quantum dots

Based on the effective-mass approximation, the hydrostatic pressure effects on exciton states in InAs/GaAs self-assembled quantum dots (QDs) are studied by means of a variational method. Numerical results show that the exciton binding energy has a minimum with increasing dot height for any hydrostatic pressure. The interband emission energy increases when the hydrostatic pressure increases. In particular, we find that hydrostatic pressure has a remarkable effect on exciton states for small QD size. Our results are in agreement with experiment measurements.     

Electron spectral properties of the InAs/GaAs quantum ring

A 3D model of semiconductor quantum ring (QR) based on the single sub-band approach with an energy-dependent electron effective mass is considered. The non-linear energy confinement problem is numerically solved iteratively by using the finite elements method. We calculate the energy spectrum of the electron states for the InAs/GaAs QR using the geometrical parameters obtained in the fabrication of such rings by A. Lorke, et al. (Phys. Rev. Lett. 84 (2000) 2223). The calculated energies are compared with the experimental data.     

Properties of narrow gap quantum dots and wells in the InAs/InSb/GaSb systems

The properties of InSb quantum dots grown by metal organic vapour phase epitaxy are summarised as deduced from photoluminescence, magneto-photoluminescence, and far-infrared modulated photoluminescence experiments. A technique is described for shifting the emission of these dots to lower energy by coupling them with a narrow InAs quantum well, leading to the demonstration of electroluminescence at 2.3 μm.     

Correlation energies of many-body complexes in biased InAs/GaAs quantum dots

The aim of this work is to analyze theoretically the correlation energies for neutral, positively, negatively charged exciton and bi-exciton. So, we propose a model consistent with experimental observations that is small InAs truncated pyramids with circular base lying on wetting layer, both buried into GaAs matrix.In a first step and in contrast to other works, we are able to evaluate coulombic interactions between electron and hole, two electrons and two holes by perturbative method at the second order. In a second step, the correlation energies of many-body complexes X, X^-, X⁺ and XX are investigated as a function of quantum dots basis radius r_c and the applied electric field.Our main goal is to provide realistic estimation for the correlation energies of excitons, charged excitons and bi-excitons while retaining at the same time a transparent formalism, which could easily be transposed to structures of actual interest.The present work provides evidence of the stability of excitons, charged excitons and bi-excitons in InAs/GaAs quantum dots. Calculated correlation energies of many-body complexes are consistent with those reported by recent photoluminescence measurements.     

Polaron relaxation dynamics in InAs/GaAs self-assembled quantum dots

Polaron decay in n-type InAs quantum dots has been investigated using energy dependent, mid-infrared pump–probe spectroscopy. By studying samples with differing ground state to first excited state energy separations the relaxation time has been measured between 40 and 60 meV. The low-temperature decay time increases with increasing detuning between the pump energy and the optical phonon energy and is maximum (55 ps) at 56 meV. From the experimentally determined decay times we are able to extract a low-temperature optical phonon lifetime of 13 ps for InAs QDs. We find that the polaron decay time decreases by a factor of 2 at room temperature due to the reduction of the optical phonon lifetime.     

InAs/GaAs quantum dot infrared photodetectors with different growth temperatures

InAs/GaAs quantum dot infrared photodetectors were fabricated with quantum dots grown at three different temperatures. Large detection wavelength shift (5–14.5 μm) was demonstrated by changing 40 degrees of the epitaxy temperature. The smaller quantum dots grown at lower temperature generate 14.5 μm responses. The detectivity of the normal incident 15 μm QDIP at 77 K is 3 × 10⁸ cm Hz^1/2/W. A three-color detector was also demonstrated with quantum dots grown at medium temperature. The three-color detection comes from two groups of different sizes of dots within one QD layer. This new type of multicolor detector shows unique temperature tuning behavior that was never reported before.