Geometries, stabilities, and electronic properties of different-sized ZrSi(n) (n=1-16) clusters: a density-functional investigation

The ZrSi(n) (n=1-16) clusters with different spin configurations have been systematically investigated by using the density-functional approach. The total energies, equilibrium geometries, growth-pattern mechanisms, natural population analysis, etc., are discussed. The equilibrium structures of different-sized ZrSi(n) clusters can be determined by two evolution patterns. Theoretical results indicate that the most stable ZrSi(n) (n=1-7) geometries, except ZrSi3, keep the analogous frameworks as the lowest-energy or the second lowest-energy Si(n+1) clusters. However, for large ZrSi(n) (n=8-16) clusters, Zr atom obviously disturbs the framework of silicon clusters, and the localized position of the transition-metal (TM) Zr atom gradually varies from the surface insertion site to the concave site of the open silicon cage and to the encapsulated site of the sealed silicon cage. It should be mentioned that the lowest-energy sandwich-like ZrSi12 geometry is not a sealed structure and appears irregular as compared with other TM@Si12 (TM = Re,Ni). The growth patterns of ZrSi(n) (n=1-16) clusters are concerned showing the Zr-encapsulated structures as the favorable geometries. In addition, the calculated fragmentation energies of the ZrSi(n) (n=1-16) clusters manifest that the magic numbers of stabilities are 6, 8, 10, 14, and 16, and that the fullerene-like ZrSi16 is the most stable structure, which is in good agreement with the calculated atomic binding energies of ZrSi(n) (n=8-16) and with available experimental and theoretical results. Natural population analysis shows that the natural charge population of Zr atom in the most stable ZrSi(n) (n=1-16) structures exactly varies from positive to negative at the critical-sized ZrSi8 cluster; furthermore, the charge distribution around the Zr atom appears clearly covalent in character for the small- or middle-sized clusters and metallic in character for the large-sized clusters. Finally, the properties of frontier orbitals and polarizabilities of ZrSi(n) are also discussed.     

Structures and electronic properties of small FeB n (n=1-10) clusters

The geometries, stabilities, electronic properties, and magnetism of FeB(n) clusters up to n=10 are systematically studied with density functional theory. We find that our optimized structures of FeB(2), FeB(3), FeB(4), and FeB(5) clusters are more stable than those proposed in previous literature. The results show that it is favorable for the Fe atom to locate at the surface, not at the center of the cluster, and that FeB(4) and FeB(9) clusters exhibit high stability. For all the FeB(n) clusters studied, we find the charge transfer from Fe to B site and the coexistence of ionic and covalent bonding characteristics. The computed total magnetic moments of the lowest-energy structures oscillate with the cluster size and are quenched at n=4, 6, 8, and 10.     

Geometries and electronic properties of the neutral and charged rare earth Yb-doped Si(n) (n = 1-6) clusters: a relativistic density functional investigation

The neutral and charged YbSi(n) (n = 1-6) clusters considering different spin configurations have been systematically investigated by using the relativistic density functional theory with generalized gradient approximation. The total bonding energies, equilibrium geometries, Mulliken populations (MP), Hirshfeld charges (HC), fragmentation energies, and highest occupied molecular orbital-lowest unoccupied molecular orbital (HOMO-LUMO) gaps are calculated and discussed. The optimized geometries indicate that the most stable YbSi(n) (n = 1-6) clusters keep basically the analogous frameworks as the low-lying Si(n)(+1) clusters, while the charged species deviate from their neutral counterparts, and that the doped Yb tends to occupy the substitutional site of the neutral and charged YbSi(n) isomers. The relative stabilities are investigated in terms of the calculated fragmentation energies, exhibiting enhanced stabilities for the remarkably stable neutral and charged YbSi2 and YbSi5 clusters. Furthermore, the calculated MP and HC values show that the charges of the neutral and charged YbSi(n) clusters transfer from the Yb atom to Si(n) atoms and the Yb atom acts as an electron donor, and that the f orbitals of the Yb atom in the neutral and charged YbSi(n) clusters behave as core without involvement in chemical bonding. The calculated HOMO-LUMO gaps indicate that the YbSi2 and YbSi4+ clusters have stronger chemical stabilities. Comparisons of the Yb-doped Si(n) (n = 1-6) with available theoretical results of transition-metal-doped silicon clusters are made. The growth pattern is investigated also.     

The structural and electronic properties of In(n)N(n = 1-13) clusters

The structural and electronic properties of In(n)N(n=1-13) clusters have been investigated by density-functional theory with the generalized gradient approximation. The results indicate that the equilibrium structures of In(n)N are linear for n=1,2, planar for n=3-5, and three dimensional for n=6-13. Maximum peaks were observed for In(n)N clusters at n=3,7,9 on the size dependence for second-order energy difference. These imply that these clusters possess relatively higher stability, which is consistent with the case of binding energy per atom. Moreover, the results show that the bonding in small In(n)N clusters has a little ionic character by Mulliken population analysis. The energy gap between the highest occupied and lowest unoccupied molecular orbitals, the vertical ionization potential and electron vertical affinity (VIP and VEA) form an even-odd alternating pattern with increasing cluster size. In general, the VIP tends to lower as the cluster size increases, while the VEA tends to increase as the cluster size increases.     

The structural and electronic properties of Ag-adsorbed (SiO2)n (n=1-7) clusters

Equilibrium geometries, charge distributions, stabilities, and electronic properties of the Ag-adsorbed (SiO(2))(n) (n=1-7) clusters have been investigated using density functional theory with generalized gradient approximation for exchange-correlation functional. The results show that the Ag atom preferably binds to silicon atom with dangling bond in nearly a fixed direction, and the incoming Ag atoms tend to cluster on the existing Ag cluster leading to the formation of Ag islands. The adsorbed Ag atom only causes charge redistributions of the atoms near itself. The effect of the adsorbed Ag atom on the bonding natures and structural features of the silica clusters is minor, attributing to the tendency of stability order of Ag(SiO(2))(n) (n=1-7) clusters in consistent with silica clusters. In addition, the energy gaps between the highest occupied and lowest unoccupied molecular orbitals remarkably decrease compared with the pure (SiO(2))(n) (n=1-7) clusters, eventually approaching the near infrared radiation region. This suggests that these small clusters may be an alternative material which has a similar functionality in treating cancer to the large gold-coated silica nanoshells and the small Au(3)(SiO(2))(3) cluster.     

Geometries and stabilities of Ag-doped Si n (n=1-13) clusters: a first-principles study

The structures of AgSi(n) (n=1-13) clusters are investigated using first-principles calculations. Our studies suggest that AgSi(n) clusters with n=7 and 10 are relatively stable isomers and that these clusters prefer to be exohedral rather than endohedral. Moreover, doping leaves the inner core structure of the clusters largely intact. Additionally, the plot of fragmentation energies as a function of silicon atoms shows that the AgSi(n) are favored to dissociate into one Ag atom and Si(n) clusters. Alternative pathways exist for n>7 (except n=11) in which the Ag-Si cluster dissociates into a stable Si(7) and a smaller fragment AgSi(n-7). The AgSi(11) cluster dissociates into a stable Si(10) and a small fragment AgSi. Lastly, our analysis indicates that doping of Ag atom significantly decreases the gaps between the highest occupied molecular orbital and the lowest unoccupied molecular orbital for n>7.     

Density-functional study of structural and electronic properties of Si(n)C(n) (n=1-10) clusters

Density-functional theory with generalized gradient approximation for the exchange-correlation potential has been used to calculate the structural and electronic structure of Si(n)C(n) (n=1-10) clusters. The geometries are found to undergo a structural change from two dimensional to three dimensional when the cluster size n equals 4. Cagelike structures are favored as the cluster size increases. A distinct segregation between the silicon and carbon atoms is observed for these clusters. It is found that the C atoms favor to form five-membered rings as the cluster size n increases. However, the growth motif for Si atoms is not observed. The Si(n)C(n) clusters at n=2, 6, and 9 are found to possess relatively higher stability. On the basis of the lowest-energy geometries obtained, the size dependence of cluster properties such as binding energy, HOMO-LUMO gap, Mulliken charge, vibrational spectrum, and ionization potential has been computed and analyzed. The bonding characteristics of the clusters are discussed.     

Density functional calculation of the structure and electronic properties of Cu(n)O(n) (n = 1-8) clusters

Ab initio simulations and calculations were used to study the structures and stabilities of copper oxide clusters, Cu(n)O(n) (n = 1-8). The lowest energy structures of neutral and charged copper oxide clusters were determined using primarily the B3LYP/LANL2DZ model chemistry. For n ≥ 4, the clusters are nonplanar. Selected electronic properties including atomization energies, ionization energies, electron affinities, and Bader charges were calculated and examined as a function of n.     

Structural and electronic properties of TaSi(n) (n=1-13) clusters: a relativistic density functional investigation

The TaSi(n) (n=1-13) clusters with doublet, quartet, and sextet spin configurations have been systematically investigated by a relativistic density functional theory with the generalized gradient approximation available in Amsterdam density functional program. The total bonding energies, equilibrium geometries, Mulliken populations as well as Hirshfeld charges of TaSi(n) (n=1-13) clusters are calculated and presented. The emphasis on the stabilities and electronic properties is discussed. The most stable structures of the small TaSi(n) (n=1-6) clusters and the evolutional rule of low-lying geometries of the larger TaSi(n) (n=7-13) clusters are obtained. Theoretical results indicate that the most stable structure of TaSi(n) (n=1-6) clusters keeps the similar framework as the most stable structure of Si(n+1) clusters except for TaSi(3) cluster. The Ta atom in the lowest-energy TaSi(n) (n=1-13) isomers occupies a gradual sinking site, and the site moves from convex, to flatness, and to concave with the number of Si atom varying from 1 to 13. When n=12, the Ta atom in TaSi(12) cluster completely falls into the center of the Si frame, and a cagelike TaSi(12) geometry is formed. Meanwhile, the net Mulliken and Hirsheld populations of the Ta atom in the TaSi(n) (n=1-13) clusters vary from positive to negative, manifesting that the charges in TaSi(n) (n>/=12) clusters transfer from Si atoms to Ta atom. Additionally, the contribution of Si-Si and Si-Ta interactions to the stability of TaSi(n) clusters is briefly discussed. Furthermore, the investigations on atomic averaged binding energies and fragmentation energies show that the TaSi(n) (n=2,3,5,7,10,11,12) clusters have enhanced stabilities. Compared with pure silicon clusters, a universal narrowing of highest occupied molecular orbital-lowest unoccupied molecular orbital gap in TaSi(n) clusters is found.     

Chromium-doped germanium clusters CrGen (n = 1-5): geometry, electronic structure, and topology of chemical bonding

The structure and properties of small neutral and cationic CrGen(0,+) clusters, with n from 1 to 5, were investigated using quantum chemical calculations at the CASSCF/CASPT2 and DFT/B3LYP levels. Smaller clusters prefer planar geometries, whereas the lowest-lying electronic states of the neutral CrGe4, CrGe5, and cationic CrGe5+ forms exhibit nonplanar geometries. Most of the clusters considered prefer structures with high-spin ground state and large magnetic moments. Relative to the values obtained for the pure Gen clusters, fragmentation energies of doped CrGen clusters are smaller when n is 3 and 4 and larger when n = 5. The averaged binding energy tends to increase with the increasing number of Ge atoms. For n = 5, the binding energies for Ge5, CrGe5, and CrGe5+ are similar to each other, amounting to approximately 2.5 eV. The Cr atom acts as a general electron donor in neutral CrGen clusters. Electron localization function (ELF) analyses suggest that the chemical bonding in chromium-doped germanium clusters differs from that of their pure or Li-doped counterparts and allow the origin of the inherent high-spin ground state to be understood. The differential DeltaELF picture, obtained in separating both alpha and beta electron components, is consistent with that derived from spin density calculations. For CrGen, n = 2 and 3, a small amount of d-pi back-donation is anticipated within the framework of the proposed bonding model.     

Geometries and magnetisms of the Zr(n) (n=2-8) clusters: the density functional investigations

The geometries, stabilities, and electronic and magnetic properties of small-sized Zr(n) (n=2-8) clusters with different spin configurations were systematically investigated by using density functional approach. Emphasis is placed on studies that focus on the total energies, equilibrium geometries, growth-pattern behaviors, fragmentation energies, and magnetic characteristics of zirconium clusters. The optimized geometries show that the large-sized low-lying Zr(n) (n=5-8) clusters become three-dimensional structures. Particularly, the relative stabilities of Zr(n) clusters in terms of the calculated fragmentation energies and second-order difference of energies are discussed, exhibiting that the magic numbers of stabilities are n=2, 5, and 7 and that the pentagonal bipyramidal D(5h) Zr(7) geometry is the most stable isomer and a nonmagnetic ground state. Furthermore, the investigated magnetic moments confirm that the atomic averaged magnetic moments of the Zr(n) (n not equal to 2) display an odd-even oscillation features and the tetrahedron C(s) Zr(4) structure has the biggest atomic averaged magnetic moment of 1.5 mu(B)/at. In addition, the calculated highest occupied molecular orbital-lowest unoccupied molecular orbital gaps indicate that the Zr(n) (n=2 and 7) clusters have dramatically enhanced chemical stabilities.     

Relativistic computational investigation: the geometries and electronic properties of TaSi(n)+ (n = 1-13, 16) clusters

The equilibrium geometries, stabilities, and electronic properties of the TaSi(n)+ (n = 1-13, 16) clusters are investigated systematically by using the relativistic density functional method with generalized gradient approximation. The small-sized TaSi(n)+ clusters with slight geometrical adjustments basically keep the frameworks that are analogous to the neutrals while the medium-sized charged clusters significantly deform the neutral geometries, which are confirmed by the calculated AIP and VIP values. Furthermore, the optimized geometries of the charged clusters agree with the experimental results of Hiura and co-workers (Hiura, H.; Miyazaki, T.; Kanayama, T. Phys. Rev. Lett. 2001, 86, 1733). The highest occupied molecular orbital (HOMO) and lowest unoccupied molecular orbital (LUMO) gaps of the charged clusters are generally increased as the cluster size goes from n = 1 to 13; and the large HOMO-LUMO gaps of charged clusters resulting from the positive charge indicate that their chemical stabilities are stronger than their neutral counterparts, especially for n = 4, 6, and 7 clusters. Additionally, the contributions of the d orbitals of the Ta atom to the HOMO and LUMO reveal that the chemical activity of the d orbitals of the Ta atom decreases gradually as the number of silicon atoms increases. This interesting finding is in good agreement with the recent experimental results on the reactive activities of the H2O and transition-metal silicon clusters (Koyasu, K.; Akutsu, M.; Mitsui, M.; Nakajima, A. J. Am. Chem. Soc. 2005, 127, 4998). Generally, the positive charge significantly influences the electronic and geometric structures of the charged clusters. Finally, the most stable neutral and charged TaSi16 clusters are found to be fullerene-like structures and the HOMO-LUMO gap in charged form is detectable experimentally.     

Density functional study of the structures and electronic properties of nitrogen-doped Ni(n) clusters, n = 1-10

We present a first-principles study of the equilibrium geometries, electronic structure, and related properties (binding energies, ionization potentials, electron affinities, and magnetic moments) of free-standing Ni(n) (n = 1-10) clusters doped with one impurity of N. Calculations have been performed in the framework of the density functional theory, as implemented in the SIESTA code within the generalized gradient approximation to exchange and correlation. We show that, in contrast to the molecular adsorption of N(2), the adsorption of a single N atom can dramatically change the structure of the host Ni(n) cluster, examples of which are Ni(5)N, Ni(7)N, and Ni(10)N, and that noticeable structure relaxations take place otherwise. Doping with a nitrogen impurity increases the binding energy as well as the ionization potential (except for Ni(6)N), which proves that N-doping works in favor of stabilizing the Ni clusters. We also find that the magnetic moments decrease in most cases upon N-doping despite the fact that the average Ni-Ni distance increases. The HUMO-LUMO gap for one spin channel strongly changes as a function of size upon N-doping, in contrast with the HUMO-LUMO gap for the other spin channel. This might have important implication in electronic transport properties through these molecular contacts anchored to source and drain electrodes.     

Optical properties of (GaAs)n clusters (n = 2-16)

The electronic and geometrical structures of the lowest triplet states of (GaAs) n clusters ( n = 2-16) are studied using density functional theory with generalized gradient approximation (DFT-GGA). It is found that the triplet-state geometries are different from the corresponding singlet-state geometries; for n = 2-8, 10, and 11, the triplets and singlets have different topologies, while the (GaAs) 9, (GaAs) 12, (GaAs) 15, and (GaAs) 16 triplets possess a reduced symmetry, due to Jahn-Teller distortions. Except for GaAs, the singlet states are the ground states. Excitation energies and oscillator strengths are computed for excitations from the ground state to ten singlet states of all (GaAs) n clusters using time-dependent density functional theory. The adiabatic singlet-triplet gap is compared to the vertical gap, and the difference in the eigenvalues of the highest-occupied and lowest-unoccupied molecular orbitals (the HOMO-LUMO gap). While these three values show large oscillations for small n, they approach each other as the cluster size grows. Thus, the HOMO-LUMO gap computed using the DFT-GGA approach presents a rather reliable estimate of the adiabatic singlet-triplet gap.     

Structural and electronic properties of neutral and ionic Ga(n)On clusters with n = 4-7

We report the results of a theoretical study of neutral, anionic, and cationic Ga(n)On clusters (n = 4-7), focusing on their ground-state configurations, stability, and electronic properties. The structural motif of these small gallium oxide clusters appears to be a rhombus or a hexagonal ring with alternate gallium and oxygen atoms. With the increase in the cluster size from Ga4O4 to Ga7O7, the ground-state configurations show a transition from planar to quasi-planar to three-dimensional structure that maximizes the number of ionic metal-oxygen bonds in the cluster. The ionization-induced distortions in the ground state of the respective neutral clusters are small. However, the nature of the LUMO orbital of the neutral isomers is found to be a key factor in determining the ordering of the low-lying isomers of the corresponding anionic clusters. A sequential addition of a GaO unit to the GaO monomer initially increases the binding energy, though values of the ionization potential and the electron affinity do not show any systematic variation in these clusters.     

Evolution of the electronic properties of Snn- clusters (n=4-45) and the semiconductor-to-metal transition

The electronic structure of Sn(n) (-) clusters (n=4-45) was examined using photoelectron spectroscopy at photon energies of 6.424 eV (193 nm) and 4.661 eV (266 nm) to probe the semiconductor-to-metal transition. Well resolved photoelectron spectra were obtained for small Sn(n) (-) clusters (n< or =25), whereas more congested spectra were observed with increasing cluster size. A distinct energy gap was observed in the photoelectron spectra of Sn(n) (-) clusters with n< or =41, suggesting the semiconductor nature of small neutral tin clusters. For Sn(n) (-) clusters with n> or =42, the photoelectron spectra became continuous and no well-defined energy gap was observed, indicating the onset of metallic behavior for the large Sn(n) clusters. The photoelectron spectra thus revealed a distinct semiconductor-to-metal transition for Sn(n) clusters at n=42. The spectra of small Sn(n) (-) clusters (n< or =13) were also compared with those of the corresponding Si(n) (-) and Ge(n) (-) clusters, and similarities were found between the spectra of Sn(n) (-) and those of Ge(n) (-) in this size range, except for Sn(12) (-), which led to the discovery of stannaspherene (the icosahedral Sn(12) (2-)) previously [L. F. Cui et al., J. Am. Chem. Soc. 128, 8391 (2006)].     

Trends in structural, electronic and energetic properties of bimetallic vanadium-gold clusters Au(n)V with n = 1-14

A systematic quantum chemical investigation on the electronic, geometric and energetic properties of Au(n)V clusters with n = 1-14 in both neutral and anionic states is performed using BP86/cc-pVTZ-PP calculations. Most clusters having an even number of electrons prefer a high spin state. For odd-electron systems, a quartet state is consistently favoured as the ground state up to Au(8)V. The larger sized Au(10)V, Au(12)V and Au(14)V prefer a doublet state. The clusters prefer 2D geometries up to Au(8)V involving a weak charge transfer. The larger systems bear 3D conformations with a more effective electron transfer from Au to V. The lowest-energy structure of a size Au(n)V is built upon the most stable form of Au(n-1)V. During the growth, V is endohedrally doped in order to maximize its coordination numbers and augment the charge transfer. Energetic properties, including the binding energies, embedding energies and second-order energy differences, show that the presence of a V atom enhances considerably the thermodynamic stability of odd-numbered gold clusters but reduces that of even-numbered systems. The atomic shape has an apparently more important effect on the clusters stability than the electronic structure. Especially, if both atomic shape and electronic condition are satisfied, the resulting cluster becomes particularly stable such as the anion Au(12)V(-), which can thus combine with the cation Au(+) to form a superatomic molecule of the type [Au(12)V]Au. Numerous lower-lying electronic states of these clusters are very close in energy, in such a way that DFT computations cannot clearly establish their ground electronic states. Calculated results demonstrate the existence of structural isomers with comparable energy content for several species including Au(9)V, Au(10)V, Au(13)V and Au(14)V.     

Probing the electronic and structural properties of chromium oxide clusters (CrO3)n(-) and (CrO3)n (n = 1-5): photoelectron spectroscopy and density functional calculations

Photoelectron spectroscopy has been conducted for a series of (CrO3)n(-) (n = 1-5) clusters and compared with density functional calculations. Well-resolved photoelectron spectra were obtained for (CrO3)n(-) (n = 1-5) at 193 nm (6.424 eV) and 157 nm (7.866 eV) photon energies, allowing for accurate measurements of the electron binding energies, low-lying electronic excitations for n = 1 and 2, and the energy gaps. Density functional and molecular orbital theory (CCSD(T)) calculations were performed to locate the ground and low-lying excited states for the neutral clusters and to calculate the electron binding energies of the anionic species. The experimental and computational studies firmly establish the unique low-spin, nonplanar, cyclic ring structures for (CrO3)n and (CrO3)n(-) for n > or = 3. The structural parameters of (CrO3)n are shown to converge rapidly to those of the bulk CrO3 crystal. The extra electron in (CrO3)n(-) (n > or = 2) is shown to be largely delocalized over all Cr centers, in accord with the relatively sharp ground-state photoelectron bands. The measured energy gaps of (CrO3)n exhibit a sharp increase from n = 1 to n = 3 and approach to the bulk value of 2.25 eV at n = 4 and 5, consistent with the convergence of the structural parameters.     

Anion photoelectron spectroscopy of germanium and tin clusters containing a transition- or lanthanide-metal atom; MGe(n)- (n = 8-20) and MSn(n)- (n = 15-17) (M = Sc-V, Y-Nb, and Lu-Ta)

The electronic properties of germanium and tin clusters containing a transition- or lanthanide-metal atom from group 3, 4, or 5, MGe(n) (M = Sc, Ti, V, Y, Zr, Nb, Lu, Hf, and Ta) and MSn(n) (M = Sc, Ti, Y. Zr, and Hf), were investigated by anion photoelectron spectroscopy at 213 nm. In the case of the group 3 elements Sc, Y, and Lu, the threshold energy of electron detachment of MGe(n)(-) exhibits local maxima at n = 10 and 16, while in the case of the group 4 elements Ti, Zr, and Hf, it exhibits a local minimum only at n = 16, associated with the presence of a small bump in the spectrum. A similar behavior is observed for MSn(n)(-) around n = 16, and these electronic characteristics of MGe(n) and MSn(n) are closely related to those of MSi(n). Compared to MSi(n), however, the larger cavity size of a Ge(n) cage allows metal atom encapsulation at a smaller size n. A cooperative effect between the electronic and geometric structures of clusters with a large cavity of Ge(16) or Sn(16) is discussed together with the results of experiments that probe their geometric stability via their reactivity to H(2)O adsorption.     

Geometrical and electronic properties of neutral and charged cesium clusters Cs(n) (n=2-10): a theoretical study

We have investigated the structure and electronic properties of cesium clusters following all electron ab initio theoretical methods based on configuration interaction, second-order Moller-Plesset (MP2) perturbation theory, and density-functional theory. Becke's three-parameter nonlocal hybrid exchange-correlation functional (B3LYP) is found to perform best on the present systems with a split valence 3-21G basis function. We have calculated the optimized geometries of neutral and singly charged cesium clusters having up to ten atoms, their binding energy per atom, ionization potentials (IPs), and adiabatic electron affinity (EA). Geometry optimizations for all the clusters are carried out without imposing any symmetry restriction. The neutral clusters having up to six atoms prefer planar structure and three-dimensional structure is preferred only when the number of atoms in a cluster is more than six. There is a good agreement between the present theoretical and reported experimental IP values for the neutral clusters with cluster size n相似文献