Generic phase diagram of “electron-doped” T′ cuprates

We investigated the generic phase diagram of the electron doped superconductor, Nd_2−xCe_xCuO₄, using films prepared by metal organic decomposition. After careful oxygen reduction treatment to remove interstitial O_ap atoms, we found that the T_c increases monotonically from 24 K to 29 K with decreasing x from 0.15 to 0.00, demonstrating a quite different phase diagram from the previous bulk one. The implication of our results is discussed on the basis of tremendous influence of O_ap “impurities” on superconductivity and also magnetism in T′ cuprates. Then we conclude that our result represents the generic phase diagram for oxygen-stoichiometric Nd_2−xCe_xCuO₄.     

Material characterization of superconducting T′-Nd2CuO4 films synthesized by metal organic decomposition

Recently we have achieved superconductivity in T′-RE₂CuO₄ (RE = Pr, Nd, Sm, Eu, and Gd), films by metal organic decomposition (MOD). In this article, we first report the cation off-stoichiometry effect, which aims at screening out the possibility of hole doping by cation deficiencies. We also investigated the structure and microstructure of superconducting T′-Nd₂CuO₄ films synthesized by MOD. This investigation aims at elucidating why MOD-grown Nd₂CuO₄ films become superconducting whereas our previous Nd₂CuO₄ films grown by molecular beam epitaxy were not superconducting.     

System-parameter dependence of the metallic phase of the non-doped 2D Hubbard model

Naito et al. reported that some non-doped T′-214-type compounds drive high-T_c superconductivity. The compounds are considered to be metallic since on-site Coulomb energy U is moderate and the Fermi surface is much deformed in these compounds. In order to confirm this picture and extract electronic structure information, we have examined the phase diagram of the metallic state of the 2D Hubbard model as a function of U and t′ (with t″ we fixed at − t′/2 here; t′ and t″ are the second- and third-neighbor transfer energies, respectively) by means of the variational Monte–Carlo method. We employed a Jastrow-type Gutzwiller trial wave function. In the studied range of U = 2–12, the boundary value for |t′| at which SDW disappears increases almost linearly with U. Jump-wise transition to the Mott insulator state was not observed. Using the boundary curve and experimental band parameter values, we estimate U  5 for T′-214 compounds. Preceding works are discussed in the last part.     

Reduced anti-ferromagnetism promoted by Zn 3d substitution at CuO2 planar sites of Cu0.5Tl0.5Ba2Ca3Cu4O12−δ superconductors

The role of charge carriers in ZnO₂/CuO₂ planes of Cu_0.5Tl_0.5Ba₂Ca₃Cu_4−yZn_yO_12−δ material in bringing about superconductivity has been explained. Due to suppression of anti-ferromagnetic order with Zn 3d¹⁰ (S=0) substitution at Cu 3d⁹ sites in the inner CuO₂ planes of Cu_0.5Tl_0.5Ba₂Ca₃Cu₄O_12−δ superconductor, the distribution of charge carriers becomes homogeneous and optimum, which is evident from the enhanced superconductivity parameters. The decreased c-axis length with the increase of Zn doping improves interlayer coupling and hence the three dimensional (3D) conductivity in the unit cell is enhanced. Also the softening of phonon modes with the increased Zn doping indicates that the electron–phonon interaction has an essential role in the mechanism of high-T_c superconductivity in these compounds.     

薄膜厚度对La1.85Sr0.15CuO4薄膜结构和超导电性的影响

使用直流同轴磁控溅射法,在SrTiO₃(STO)衬底上成功制备出c取向的La_1.85Sr_0.15CuO₄(LSCO)超导薄膜.通过电输运测量系统和X射线衍射仪研究了薄膜厚度对LSCO(x＝0.15)薄膜电学性质和晶体结构的影响.实验证明随着膜厚增加,(006)衍射峰的半高宽(Full Width at Half Maximum,FWHM)逐渐减小,薄膜的取向性增强,与此同时,薄膜的超导转变温 关键词： 1.85Sr_0.15CuO₄薄膜')" href="#">La_1.85Sr_0.15CuO₄薄膜 超导电性 晶体结构     

Vortex dynamics in single crystal Hg-1201

Anisotropic superconducting materials often show an enhanced pinning along their crystallographic ab-planes. To obtain information about such a behavior of the high-T_c system Hg-1201 (HgBa₂CuO₄) magnetic investigations on a single crystal are performed for the two field orientations, parallel to the c-axis and parallel to the ab-planes. The dependence of the ac magnetization on temperature, magnetic field and frequency is determined. Compared to former results on powder samples of this system no indication of a second peak in the imaginary part of the susceptibility χ′′ is found. It seems to be shifted to higher temperatures overlapping now with the first peak. The corresponding irreversibility lines for both orientations, parallel to c and parallel to ab, are determined and discussed within the framework of a “diffusion” model.     

MnxSi1-x磁性薄膜的结构研究

利用X射线衍射(XRD)和X射线吸收近边结构(XANES)方法研究了在Si(100)衬底上及600℃温度条件下用分子束外延(MBE)共蒸发方法生长的Mn_xSi_1-x磁性薄膜的结构.由XRD结果表明,只有在高Mn含量(8％和17％)样品中存在着Mn₄Si₇化合物物相.而XANES结果则显示,对于Mn浓度在0.7%到17%之间的Mn_xSi_1-x样品,其Mn原子的XANES谱表现出了一致的谱线特征.基于多重散射的XANES理论计算进一步表明,只有根据Mn₄Si₇模型计算出的理论XANES谱才能够很好的重构出Mn_xSi_1-x样品的实验XANES谱.这些研究结果说明在Mn_xSi_1-x样品中,Mn原子主要是以镶嵌式的Mn₄Si₇化合物纳米晶颗粒存在于Si薄膜介质中,几乎不存在间隙位和替代位的Mn原子. 关键词： xSi_1-x磁性薄膜')" href="#">Mn_xSi_1-x磁性薄膜 分子束外延 XRD XANES     

MBE growth and properties of T′-La2CuO4 thin films

We prepared thin films of T′-La₂CuO₄, which usually crystallizes in the T structure, by MBE, and investigated their properties while systematically changing the post-reduction conditions with a view towards obtaining superconductivity along the lines of the parent compound superconductors we have recently reported (O. Matsumoto et al., Phys. Rev. B 79 (2009) 100508(R)). The results indicate that the optimal reduction window is very narrow, near which metallic conductivity is obtained down to 50 K. The resistivity of the T′-La₂CuO₄ films is in the range of 10⁻²–10⁻³ Ω cm, which is several orders of magnitude lower than that of the counterpart T-La₂CuO₄, the implication of which is briefly discussed from the viewpoint of the difference in electronic structure induced by different oxygen coordination.     

Direct angle resolved photoemission spectroscopy and superconductivity of strained high-T c films

Since 1997 we systematically perform direct angle resolved photoemission spectroscopy (ARPES) on in-situ grown thin (<30 nm) cuprate films. Specifically, we probe low-energy electronic structure and properties of high-T _c superconductors (HTSC) under different degrees of epitaxial (compressive vs. tensile) strain. In overdoped and underdoped in-plane compressed (the strain is induced by the choice of substrate) ≈15 nm thin La_{2 − x} Sr _x CuO₄ (LSCO) films we almost double T _c to 40 K, from 20 K and 24 K, respectively. Yet the Fermi surface (FS) remains essentially two-dimensional. In contrast, ARPES data under tensile strain exhibit the dispersion that is three-dimensional, yet T _c drastically decreases. It seems that the in-plane compressive strain tends to push the apical oxygen far away from the CuO₂ plane, enhances the two-dimensional character of the dispersion and increases T _c, while the tensile strain acts in the opposite direction and the resulting dispersion is three-dimensional. We have established the shape of the FS for both cases, and all our data are consistent with other ongoing studies, like EXAFS. As the actual lattice of cuprates is like a ‘Napoleon-cake’, i.e. rigid CuO₂ planes alternating with softer ‘reservoir’, that distort differently under strain, our data rule out all oversimplified two-dimensional (rigid lattice) mean field models. The work is still in progress on optimized La-doped Bi-2201 films with enhanced T _c.      

Evidence for superconductivity in fluorinated La2CuO4 at 35 K: Microwave investigations

In the fluorinated La₂CuO_4−x prepared using a solid state reaction with NH₄HF₂ as a fluorinating agent at 550 K at ambient pressure, superconductivity was detected by microwave and EPR techniques with aT _c of 35 K.     

Dependence of property, crystal structure and electric conductivity on substitution content and synthetic process of T′-La2−xRExCuO4−δ (RE = Sm and Tb)

We synthesized T′-La_2−xRE_xCuO_4−δ (RE = Sm and Tb) by a co-precipitation method and sintering in vacuum at various temperatures, and investigated relationship among the crystal structure, average valence of Cu, oxygen content and electric conductivity. From X-ray diffraction measurements, it was confirmed that a main phase of the product was T′ structure (S. G.: I4/mmm) regardless of the rare earth element and its concentration, although an impurity phase was observed in a part of samples. In the samples with low average valence of Cu, the resistivity showed a metallic behavior and remarkably decreased at low temperature. Rietveld analyses using synchrotron X-ray diffractions suggested that the electric conductivity was improved by decreasing a bond length of Cu–O1 in the case of La_2−xSm_xCuO_4−δ.     

Investigation of novel highT c superconducting oxides

Our results of microscopic and macroscopic studies of novel highT _c superconductors are discussed. They permit a straightforward comparison of the nature of the superconductivity in 40 K range (La₂CuO₄ type) and 90 K range (YBa₂Cu₃O₇ type) superconductors.     

Magnetotransport and magnetotunneling in single-layer, two-layer, and three-layer Bi2Sr2Can−1CunOz (n=1,2,3) single crystals

In continuous magnetic fields H up to 28 T, we have studied the out-of-plane transport properties and tunneling characteristics of high-quality nondoped single crystals of the Bi-cuprate family: Bi₂Sr₂CuO_6+δ (Bi2201), Bi₂Sr₂CaCu₂O_8+δ (Bi2212) and Bi₂Sr₂Ca₂Cu₃O_10+δ (Bi2223) grown by an identical method. For all compounds the out-of-plane magnetotransport ρ_c(H) is negative in the temperature region where ρ_c(T) shows in the normal state a semiconducting-like temperature dependence. The negative magnetoresistance of ρ_c corresponds to the suppression of the semiconducting temperature dependence of ρ_c(T) which is found to be isotropic. For the Bi2201 compound, where the normal state can be reached in the available magnetic fields (28 T), a nearly complete suppression of the low-temperature upturn in ρ_c(T) is observed in the highest magnetic fields with a tendency towards a metallic behavior down to the lowest temperatures (0.4 K). Using the break-junction technique, especially for the Bi2212 and Bi2232 compounds, a clear superconducting gap structure can be observed. Both for temperatures above the critical temperature and for magnetic fields above the upper critical field, a pseudogap structure remains present in the tunneling spectra. The applied magnetic fields yield a stronger suppression of the superconducting state compared to that of the normal-state gap structures as manifested in ρ_c(T) transport and tunneling.     

Superconductivity in the hole-doped oxy-arsenide RE1−xSrxFeAsO (RE = La, Pr)

Bulk superconductivity was observed in the FeAs-based RE_1−xSr_xFeAsO (RE = La, Pr) when the di-valence element Sr was substituted to the site of the tri-valence element La and Pr. The maximum superconducting transition temperatures T_c for the two systems are 26 K and 16.3 K, respectively. The doping dependence of the electrical properties and structure of these two systems were investigated systematically. A roughly monotonic increase of T_c and the lattice constants (a-axis and c-axis) with Sr concentration and a saturation behavior in the high doping levels were found. We confirmed that conduction in this type of materials is dominated by hole-like charge carriers by the Hall effect measurements. Also the resistive measurements revealed possible higher upper critical field in these systems comparing with the electron-doped ones.     

Thin film synthesis and the influence of irradiation-induced defects on the superconductivity of La1.8Sr0.2CuO4

Thin superconducting films of La_1.8Sr_0.2CuO₄ have been prepared by magnetron sputter deposition and subsequent temperature treatment. The composition of the films has been determined by Rutherford backscattering and the structure by thin film X-ray diffraction. The onset of superconductivity was about 32 K and the midpoint near 28 K. Defect production in the films by He ion bombardment revealed a drasticT _c reduction with a sensitivity similar to that observed in the Chevrel phases. Oxygen implantation and subsequent annealing led to an enhancement of theT _c onset.     

Effect of Ca doping on the superconducting properties of GdBaSrCu3O7−δ bulk samples

Gd_1−xCa_xBaSrCu₃O_7−δ samples (0  x  0.1) were prepared via solid-state reaction. Four-point probes method was used for resistance versus temperature measurements. Results show decrease in T_c by increasing x content. This variation is assumed to be irrelevant to the different phases or impurity effects since X-ray patterns show all samples are tetragonal single-phase. Ca doping decreases the oxygen content and lattice parameters of the samples. It is suggested that Ca prevents the dislocation of oxygen, and then disrupts the hole concentration of the system and antiferromagnetic correlation at CuO₂ planes. Subsequently, destroys the superconductivity of the samples.     

Terahertz time-domain reflection spectroscopy for high-Tc superconducting cuprates

We have developed a terahertz time-domain spectroscopy (THz-TDS) system for reflectivity measurement with a temperature-controllable cryostat. For emission and detection of THz radiation, a Ti:Sapphire pulsed laser and photoconductive antennas are used. Two wire-grid polarizers enable us to carry out the polarized reflectivity measurements. Using our THz-TDS system, we measured the c-axis polarized reflectivity spectra for La_2−xSr_xCuO₄ single crystals (x = 0.10 and 0.13) and observed sharp Josephson plasma edges for both samples below T_c. The reflectivity spectra of the x = 0.10 sample were in good agreement with those reported previously, which confirms the validity of the system. For the x = 0.13 sample, we discuss the anomolous features of the optical spectra.     

制备工艺对Zn1-xMgxO薄膜结构及光学性能的影响

采用脉冲激光沉积（PLD）方法在单晶Si（100）衬底上沿c轴方向生长单晶Zn_1-xMg_xO薄膜,通过X射线衍射（XRD）、原子力显微镜（AFM）、扫描电镜（SEM）和荧光光谱（PL）研究了膜厚、Mg含量、退火温度及氧气氛等制备工艺对Zn_1-xMg_xO薄膜的结构、形貌和光学性质的影响.实验结果表明,Mg含量x≤0.15时, Zn_{关键词： 1-x}Mg_xO薄膜')" href="#">Zn_1-xMg_xO薄膜 制备工艺 结构 光学性质     

Structure of grain boundaries in YBa2Cu3O7 thin-film step-edge junctions

The atomic structure of 90° [100] (or [010]) tilt grain boundaries in YBa₂Cu₃O₇ thin-film step-edge junctions and, for comparison, in the interface between a-axis and c-axis oriented YBa₂Cu₃O₇ grains is investigated by means of high-resolution transmission electron microscopy. For (100)(001)-type boundaries two different structures are found. In the first a (001) CuO₂ plane of one grain faces a (100) Y–Ba–O plane of the other grain, in the second a (001) BaO plane faces a (100) Cu–O plane. In the former structure an incomplete unit cell of YBa₂Cu₃O₇ terminates at the boundary and a smaller strain in the adjacent CuO₂ planes is detected in comparison with the latter. It is found that a combination of a partial dislocation with a 124 stacking fault is a way to accommodate the lattice mismatch between c and 3a of YBa₂Cu₃O₇ in the boundary. For a symmetric (103)(103)-type boundary a displacement of the Cu-atoms of the CuO₂ planes is found near the boundary plane. From this a redistribution of the oxygen atoms around the Y-atoms located right in the boundary plane is inferred. The possible effect of the boundary structure on the superconducting properties of YBa₂Cu₃O₇ films is discussed.