Mott Transition in Lattice Boson Models

We use mathematically rigorous perturbation theory to study the transition between the Mott insulator and the conjectured Bose-Einstein condensate in a hard-core Bose-Hubbard model. The critical line is established to lowest order in the tunneling amplitude.Collaboration supported in part by the Swiss National Science Foundation under grant 2-77344-03.     

Influence of Doping on the Mott Metal—Insulator Transition in Infinite Dimensions

We have studied the effect of hole-doping on the established scenerio of the first-order Mott metal-insulator transition (MIT) at half-filling using dynamical mean-field theory and exact diagonalization technique.The mott insulator state is changed into metallic state immediately as holes are doped into the system.The latter is expected to be Fermi liquid.The previously found unanalytical structure of MIT no longer exists for doping as small as 2 percent.We compare our results with that obtained from Gutzwiller approximation.     

Transition from a two-dimensional superfluid to a one-dimensional Mott insulator

A two-dimensional system of atoms in an anisotropic optical lattice is studied theoretically. If the system is finite in one direction, it is shown to exhibit a transition between a two-dimensional superfluid and a one-dimensional Mott insulating chain of superfluid tubes. Monte Carlo simulations are consistent with the expectation that the phase transition is of Kosterlitz-Thouless type. The effect of the transition on experimental time-of-flight images is discussed.     

Mott Transition and Superconductivity in Quantum Spin Liquid Candidate NaYbSe_2

The Mott transition is one of the fundamental issues in condensed matter physics,especially in the system with antiferromagnetic long-range order.However,such a transition is rare in quantum spin liquid(QSL) systems without long-range order.Here we report the experimental pressure-induced insulator to metal transition followed by the emergence of superconductivity in the QSL candidate NaYbSe₂ with a triangular lattice of 4 f Yb³⁺ ions.Detail analysis of transport properties...     

Hubbard Bands,Mott Transition and Deconfinement in Strongly Correlated Systems

JETP Letters - The problem of deconfinement phases in strongly correlated systems is discussed. In space–time dimension $$d = 3 + 1$$ , a competition of confinement and Coulomb phases occurs,...     

Transition from a strongly interacting 1d superfluid to a Mott insulator

We study 1D trapped Bose gases in the strongly interacting regime. The systems are created in an optical lattice and are subject to a longitudinal periodic potential. Bragg spectroscopy enables us to investigate the excitation spectrum in different regimes. In the superfluid phase a broad continuum of excitations is observed which calls for an interpretation beyond the Bogoliubov spectrum taking into account the effect of strong interactions. In the Mott insulating phase a discrete spectrum is measured. Both phases are compared to the 3D situation and to the crossover regime from 1D to 3D. The coherence length and coherent fraction of the gas are measured in all configurations. We observe signatures for increased fluctuations characteristic for 1D systems. Moreover, the collective oscillations cease near the transition to the Mott insulator phase.     

Variational local moment approach: From Kondo effect to Mott transition in correlated electron systems

The variational local moment approach (VLMA) solution of the single impurity Anderson model is presented. It generalizes the local moment approach of Logan et al. by invoking the variational principle to determine the lengths of local moments and orbital occupancies. We show that VLMA is a comprehensive, conserving and thermodynamically consistent approximation and treats both Fermi and non-Fermi liquid regimes as well as local moment phases on equal footing. We tested VLMA on selected problems. We solved the single- and multi-orbital impurity Anderson model in various regions of parameters, where different types of Kondo effects occur. The application of VLMA as an impurity solver of the dynamical mean-field theory, used to solve the multi-orbital Hubbard model, is also addressed.     

Expression for the Mott corrections to the Bethe-Bloch formula in terms of the Mott partial amplitudes

It is shown that the calculation of the Mott corrections to the Bethe-Bloch formula can be reduced to summation of a series whose terms are bilinear in the Mott partial amplitudes. Pis’ma Zh. éksp. Teor. Fiz. 64, No. 9, 604–607 (10 November 1996)     

Pseudogap in doped Mott insulators is the near-neighbor analogue of the Mott gap

We show that the strong-coupling physics inherent to the insulating Mott state in 2D leads to a jump in the chemical potential upon doping and the emergence of a pseudogap in the single-particle spectrum below a characteristic temperature. The pseudogap arises because any singly occupied site not immediately neighboring a hole experiences a maximum energy barrier for transport equal to t(2)/U, t the nearest-neighbor hopping integral and U the on-site repulsion. The resultant pseudogap cannot vanish before each lattice site, on average, has at least one hole as a near neighbor. The ubiquity of this effect in all doped Mott insulators suggests that the pseudogap in the cuprates has a simple origin.     

Topological Mott insulators

We consider extended Hubbard models with repulsive interactions on a honeycomb lattice, and the transitions from the semimetal to Mott insulating phases at half-filling. Because of the frustrated nature of the second-neighbor interactions, topological Mott phases displaying the quantum Hall and the quantum spin Hall effects are found for spinless and spin fermion models, respectively. The mean-field phase diagram is presented and the fluctuations are treated within the random phase approximation. Renormalization group analysis shows that these states can be favored over the topologically trivial Mott insulating states.     

Fragile Mott insulators

We prove that there exists a class of crystalline insulators, which we call "fragile Mott insulators," which are not adiabatically connected to any sort of band insulator provided time-reversal and certain point-group symmetries are respected, but which are otherwise unspectacular in that they exhibit no topological order nor any form of fractionalized quasiparticles. Different fragile Mott insulators are characterized by different nontrivial one-dimensional representations of the crystal point group. We illustrate this new type of insulators with two examples: the d Mott insulator discovered in the checkerboard Hubbard model at half-filling and the Affleck-Kennedy-Lieb-Tasaki insulator on the square lattice.     

Dielectric catastrophe at the Mott transition

We study the Mott transition as a function of interaction strength in the half-filled Hubbard chain with next-nearest-neighbor hopping t' by calculating the response to an external electric field using the density matrix renormalization group. The electric susceptibility chi diverges when approaching the critical point from the insulating side. We show that the correlation length xi characterizing this transition is directly proportional to fluctuations of the polarization and that chi approximately xi2. The critical behavior shows that the transition is infinite order for all t', whether or not a spin gap is present, and that hyperscaling holds.     

Mott Transition in GdMnO<Subscript>3</Subscript>: an Ab Initio Study

Orthorhombic GdMnO₃ is studied using density functional theory considering the pseudo-potential plane-wave method within local-spin-density approximation, LSDA. The electronic band structure and density of states, for several hydrostatic pressures, are studied. The Mott transition was observed at 60 GPa. Calculated lattice parameters are close to the experimental measurements, and some indirect band gaps (S→Γ) were obtained within the LSDA level of calculation, between the occupied O-2p and unoccupied Gd-4f states. The variation of the gap reduces with increasing pressure, being well fitted to a quadratic function.     

Quantum critical transport near the Mott transition

We perform a systematic study of incoherent transport in the high temperature crossover region of the half filled one-band Hubbard model. We demonstrate that the family of resistivity curves displays characteristic quantum critical scaling of the form ρ(T, δU) = ρ(c)(T)f(T/T?(δU)), with T?(δU) ~ |δU|(zν), and ρ(c)(T) ~ T. The corresponding β function displays a "strong coupling" form β ~ ln(ρ(c)/ρ), reflecting the peculiar mirror symmetry of the scaling curves. This behavior, which is surprisingly similar to some experimental findings, indicates that Mott quantum criticality may be acting as the fundamental mechanism behind the unusual transport phenomena in many systems near the metal-insulator transition.