CdS‐Encapsulated TiO2 Nanotube Arrays Lidded with ZnO Nanorod Layers and Their Photoelectrocatalytic Applications

A novel TiO₂ nanotube array/CdS nanoparticle/ZnO nanorod (TiO₂ NT/CdS/ZnO NR) photocatalyst was constructed which exhibited a wide‐absorption (200–535 nm) response in the UV/Vis region and was applied for the photoelectrocatalytic (PEC) degradation of dye wastewater. This was achieved by chemically assembling CdS into the TiO₂ NTs and then constructing a ZnO NR layer on the TiO₂ NT/CdS surface. Scanning electron microscopy (SEM) results showed that a new structure had been obtained. The TiO₂ NTs looked like many “empty bottles” and the ZnO NR layer served as a big lid. Meanwhile the CdS NPs were encapsulated between them with good protection. After being sensitized by the CdS NPs, the absorption‐band edge of the obtained photocatalyst was obviously red‐shifted to the visible region, and the band gap was reduced from its original 3.20 eV to 2.32 eV. Photoelectric‐property tests indicated that the TiO₂ NT/CdS/ZnO NR material maintained a very high PEC activity in both the ultraviolet (UV) and the visible region. The maximum photoelectric conversion efficiencies of TiO₂ NT/CdS/ZnO NR were 31.8 and 5.98 % under UV light (365 nm) and visible light (420–800 nm), respectively. In the PEC oxidation, TiO₂ NT/CdS/ZnO NR exhibited a higher removal ability for methyl orange (MO) and a high stability. The kinetic constants were 1.77×10^?4 s^?1 under UV light, which was almost 5.9 and 2.6 times of those on pure TiO₂ NTs and TiO₂ NT/ZnO NR, and 2.5×10^?4 s^?1 under visible light, 2.4 times those on TiO₂ NT/CdS.     

Room‐Temperature Synthesis of Cu2−xE (E=S,Se) Nanotubes with Hierarchical Architecture as High‐Performance Counter Electrodes of Quantum‐Dot‐Sensitized Solar Cells

Copper chalcogenide nanostructures (e.g. one‐ dimensional nanotubes) have been the focus of interest because of their unique properties and great potential in various applications. Their current fabrications mainly rely on high‐temperature or complicated processes. Here, with the assistance of theoretical prediction, we prepared Cu_2?xE (E=S, Se) micro‐/nanotubes (NTs) with a hierarchical architecture by using copper nanowires (Cu NWs), stable sulfur and selenium powder as precursors at room temperature. The influence of reaction parameters (e.g. precursor ratio, ligands, ligand ratio, and reaction time) on the formation of nanotubes was comprehensively investigated. The resultant Cu_2?xE (E=S, Se) NTs were used as counter electrodes (CE) of quantum‐dot‐sensitized solar cells (QDSSCs) to achieve a conversion efficiency (η) of 5.02 and 6.25 %, respectively, much higher than that of QDSSCs made with Au CE (η=2.94 %).     

Incorporating Zn2SnO4 Quantum Dots and Aggregates for Enhanced Performance in Dye‐Sensitized ZnO Solar Cells

The performance of dye‐sensitized ZnO solar cells was improved by a facile surface‐treatment approach through chemical‐bath deposition. After the surface treatment, the quantum dots of Zn₂SnO₄ were deposited onto ZnO nanoparticles accompanied by the aggregations of Zn₂SnO₄ nanoparticles. The ZnO film displayed a better resistance to acidic dye solution on account of the deposited Zn₂SnO₄ nanoparticles. Meanwhile, the open‐circuit photovoltage was greatly enhanced, which can be ascribed to the increased conduction‐band edge of ZnO and inhibited interfacial charge recombination. Although the deposition of Zn₂SnO₄ decreased the adsorption amounts of N719 dye, the aggregates of Zn₂SnO₄ with a size of 350–450 nm acted as the effective light‐scattering layer, thereby resulting in an improved short‐circuit photocurrent. By co‐sensitizing 10 μm‐thick ZnO film with N719 and D131 dyes, a top efficiency of 4.38 % was achieved under the illumination of one sun (AM 1.5, 100 mW cm^?2).     

Enhanced photoelectrochemical performance of Bi2S3/Ag2S/ZnO novel ternary heterostructure nanorods

The current work investigates the morphology, crystallinity and photoelectrochemical (PEC) performance of bismuth sulfide/silver sulfide/zinc oxide nanorods (Bi₂S₃/Ag₂S/ZnO NRAs) photoelectrodes as prepared at different annealing temperature. ZnO NRAs was initially grown hydrothermally, deposited in sequence with Ag₂S and Bi₂S₃ via successive ionic layer adsorption and reaction (SILAR) method before undergoing the annealing treatment. The optimised photoelectrode (Bi₂S₃/Ag₂S/ZnO NRAs-400 °C) possesses an optical bandgap of 1.60 eV extending the absorption edge of ZnO to visible light spectrum. The current-voltage characterization of Bi₂S₃/Ag₂S/ZnO NRAs photoelectrodes revealed that the photocurrent density and photoconversion efficiency were strongly dependent on the annealing temperature. The PEC study shows that the photoelectrode annealed at 400 °C achieved impressive photocurrent density of 12.95 mA/cm² at +0.5 V (vs Ag/AgCl/saturated KCl) under 100 mW/cm² illumination with superior photoconversion efficiency of 12.63%. This improvement is due to the cascade-designed band structure alignment of Bi₂S₃/Ag₂S/ZnO/ITO and to the brilliant role of Ag₂S as an intermediate layer that reduced random chance of electron-hole (e⁻_-h⁺) pairs recombination and improved the electrons collection efficiency. This work is highly anticipated to give contribution on further utilisation of Bi₂S₃/Ag₂S/ZnO NRAs as a promising semiconductor material in PEC related applications.     

Synthesis of ZnO nanorods and their application in quantum dot sensitized solar cells

ZnO nanorod thin films of different thicknesses and CdS quantum dots have been prepared by chemical method. X-ray diffraction pattern reveals that the CdS quantum dot and ZnO nanorods are of hexagonal structure. Field emission scanning electron microscope images show that the diameter of hexagonal shaped ZnO nanorods ranges from 110 to 200 nm and the length of the nanorod vary from 1.3 to 4.7 μm. CdS quantum dots with average size of 4 nm have been deposited onto ZnO nanorod surface using successive ionic layer adsorption and reaction method and the assembly of CdS quantum dot with ZnO nanorod has been used as photo-electrode in quantum dot sensitized solar cells. The efficiency of the fabricated CdS quantum dot-sensitized ZnO nanorod-based solar cell is 1.10 % and is the best efficiency reported so far for this type of solar cells.     

Performance Enhancement of Bulk Heterojunction Solar Cells with Direct Growth of CdS‐Cluster‐Decorated Graphene Nanosheets

Two‐dimensional graphene–CdS (G–CdS) semiconductor hybrid nanosheets were synthesized in situ by graphene oxide (GO) quantum wells and a metal–xanthate precursor through a one‐step growth process. Incorporation of G–CdS nanosheets into a photoactive film consisting of poly[4,8‐bis‐(2‐ethyl‐hexyl‐thiophene‐5‐yl)‐benzo[1,2‐b:4,5‐b]dithiophene‐2,6‐diyl]‐alt‐[2‐(2‐ethyl‐hexanoyl)‐thieno[3,4‐b]thiophen‐4,6‐diyl] (PBDTTT‐C‐T) and [6,6]‐phenyl C₇₀ butyric acid methyl ester (PC₇₀BM) effectively decreases the exciton lifetime to accelerate exciton dissociation. More importantly, the decreasing energy levels of PBDTTT‐C‐T, PC₇₀BM, and G–CdS produces versatile heterojunction interfaces of PBDTTT‐C‐T:PC₇₀BM, PBDTTT‐C‐T:G–CdS, and PBDTTT‐C‐T:PC₇₀BM:G–CdS; this offers multi‐charge‐transfer channels for more efficient charge separation and transfer. The charge transfer in the blend film also depends on the G–CdS nanosheet loadings. In addition, G–CdS nanosheets improve light utilization and charge mobility in the photoactive layer. As a result, by incorporation of G–CdS nanosheets into the active layer, the power‐conversion efficiency of inverted solar cells based on PBDTTT‐C‐T and PC₇₁BM is improved from 6.0 % for a reference device without G–CdS nanosheets to 7.5 % for the device with 1.5wt % G–CdS nanosheets, due to the dramatically enhanced short‐circuit current. Combined with the advantageous mechanical properties of the PBDTTT‐C‐T:PC₇₀BM:G–CdS active layer, the novel CdS‐cluster‐decorated graphene hybrid nanomaterials provide a promising approach to improve the device performance.     

SnS‐Quantum Dot Solar Cells Using Novel TiC Counter Electrode and Organic Redox Couples

Low‐cost quantum‐dot sensitized solar cells (QDSSCs) were fabricated by using the earth‐abundant element SnS quantum dot, novel TiC counter electrodes, and the organic disulfide/thiolate (T₂/T^?) redox couple, and reached an efficiency of 1.03 %. QDSSCs based on I^?/I₃^?, T₂/T^?, and S^2?/S_x^2? redox couples were assembled to study the role of the redox couples in the regeneration of sensitizers. Charge‐extraction results reveal the reasons for the difference in J_SC in three QDSSCs based on I^?/I₃^?, T₂/T^?, and S^2?/S_x^2? redox couples. The catalytic selectivity of TiC and Pt towards T₂/T^? and I^?/I₃^? redox couples was investigated using Tafel polarization and electrochemical impedance analysis. These results indicated that Pt and TiC show a similar catalytic selectivity for I^?/I₃^?. However, TiC possesses better catalytic activity for T₂/T^? than for I^?/I₃^?. These results indicate the great potential of transition metal carbide materials and organic redox couples used in QDSSCs.     

Phosphorene Co‐catalyst Advancing Highly Efficient Visible‐Light Photocatalytic Hydrogen Production

Transitional metals are widely used as co‐catalysts boosting photocatalytic H₂ production. However, metal‐based co‐catalysts suffer from high cost, limited abundance and detrimental environment impact. To date, metal‐free co‐catalyst is rarely reported. Here we for the first time utilized density functional calculations to guide the application of phosphorene as a high‐efficiency metal‐free co‐catalyst for CdS, Zn_0.8Cd_0.2S or ZnS. Particularly, phosphorene modified CdS shows a high apparent quantum yield of 34.7 % at 420 nm. This outstanding activity arises from the strong electronic coupling between phosphorene and CdS, as well as the favorable band structure, high charge mobility and massive active sites of phosphorene, supported by computations and advanced characterizations, for example, synchrotron‐based X‐ray absorption near edge spectroscopy. This work brings new opportunities to prepare highly‐active, cheap and green photocatalysts.     

微波水热两步法合成高可见光响应Ag2S/ZnO及其光催化性能、机理

在不同的制备条件下,通过微波水热两步法获得了一系列Ag₂S/ZnO光催化剂,采用X射线粉末衍射(XRD)、X射线光电子能谱(XPS)、紫外-可见漫反射吸收光谱(UV-Vis/DRS)、扫描电子显微镜(SEM)和N₂吸附-脱附等测试手段对产物结构和形貌进行了表征。结果表明,产物以六方纤锌矿ZnO为主,其晶型结构并未随着反应温度和Ag₂S物质的量的增加而改变。Ag₂S的引入显著增强了光催化剂在可见光区的吸收,使吸收边带发生红移,同时抑制了ZnO(001)晶面的生长。另外,所得产物的形貌随着Ag₂S物质的量的增加从爆米花状转变为少量的柱体颗粒,且BET比表面积经过复合后明显减小。以罗丹明B为目标降解物,研究并比较了一系列Ag₂S/ZnO光催化剂对罗丹明B的光降解性能。结果表明,n_Ag2S/n_ZnO为1:10时,光催化剂在紫外光、可见光和模拟日光的照射下具有最好的光催化效果,优于目前应用最广泛的市售P25。另外,所制备的光催化材料Ag₂S/ZnO经4次循环使用后,其降解效率没有明显下降,表明该催化材料具有一定的光催化稳定性。经捕获实验研究发现,在Ag₂S/ZnO的光催化反应中空穴起主要作用,并根据绝对电负性估算了复合材料Ag₂S/ZnO的能带位置,据此提出了可能的光催化反应机理。     

微波水热两步法合成高可见光响应Ag2S/ZnO及其光催化性能、机理

在不同的制备条件下,通过微波水热两步法获得了一系列Ag₂S/ZnO光催化剂,采用X射线粉末衍射(XRD)、X射线光电子能谱(XPS)、紫外-可见漫反射吸收光谱(UV-Vis/DRS)、扫描电子显微镜(SEM)和N₂吸附-脱附等测试手段对产物结构和形貌进行了表征。结果表明,产物以六方纤锌矿ZnO为主,其晶型结构并未随着反应温度和Ag₂S物质的量的增加而改变。Ag₂S的引入显著增强了光催化剂在可见光区的吸收,使吸收边带发生红移,同时抑制了ZnO(001)晶面的生长。另外,所得产物的形貌随着Ag₂S物质的量的增加从爆米花状转变为少量的柱体颗粒,且BET比表面积经过复合后明显减小。以罗丹明B为目标降解物,研究并比较了一系列Ag₂S/ZnO光催化剂对罗丹明B的光降解性能。结果表明,n_Ag2S/n_ZnO=1:10时,光催化剂在紫外光、可见光和模拟日光的照射下具有最好的光催化效果,优于目前应用最广泛的市售P25。另外,所制备的光催化材料Ag₂S/ZnO经4次循环使用后,其降解效率没有明显下降,表明该催化材料具有一定的光催化稳定性。经捕获实验研究发现,在Ag₂S/ZnO的光催化反应中空穴起主要作用,并根据绝对电负性估算了复合材料Ag₂S/ZnO的能带位置,据此提出了可能的光催化反应机理。     

Synthesis of WOn‐WX2 (n=2.7, 2.9; X=S,Se) Heterostructures for Highly Efficient Green Quantum Dot Light‐Emitting Diodes

Preparation of two‐dimensional (2D) heterostructures is important not only fundamentally, but also technologically for applications in electronics and optoelectronics. Herein, we report a facile colloidal method for the synthesis of WO_n ‐WX₂ (n =2.7, 2.9; X=S, Se) heterostructures by sulfurization or selenization of WO_n nanomaterials. The WO_n ‐WX₂ heterostructures are composed of WO_2.9 nanoparticles (NPs) or WO_2.7 nanowires (NWs) grown together with single‐ or few‐layer WX₂ nanosheets (NSs). As a proof‐of‐concept application, the WO_n ‐WX₂ heterostructures are used as the anode interfacial buffer layer for green quantum dot light‐emitting diodes (QLEDs). The QLED prepared with WO_2.9 NP‐WSe₂ NS heterostructures achieves external quantum efficiency (EQE) of 8.53 %. To our knowledge, this is the highest efficiency in the reported green QLEDs using inorganic materials as the hole injection layer.     

Synthesis of WOn‐WX2 (n=2.7, 2.9; X=S,Se) Heterostructures for Highly Efficient Green Quantum Dot Light‐Emitting Diodes

Preparation of two‐dimensional (2D) heterostructures is important not only fundamentally, but also technologically for applications in electronics and optoelectronics. Herein, we report a facile colloidal method for the synthesis of WO_n ‐WX₂ (n =2.7, 2.9; X=S, Se) heterostructures by sulfurization or selenization of WO_n nanomaterials. The WO_n ‐WX₂ heterostructures are composed of WO_2.9 nanoparticles (NPs) or WO_2.7 nanowires (NWs) grown together with single‐ or few‐layer WX₂ nanosheets (NSs). As a proof‐of‐concept application, the WO_n ‐WX₂ heterostructures are used as the anode interfacial buffer layer for green quantum dot light‐emitting diodes (QLEDs). The QLED prepared with WO_2.9 NP‐WSe₂ NS heterostructures achieves external quantum efficiency (EQE) of 8.53 %. To our knowledge, this is the highest efficiency in the reported green QLEDs using inorganic materials as the hole injection layer.     

CdS量子点敏化ZnO纳米棒阵列电极的制备和光电化学性能

采用连续式离子层吸附与反应法制备了CdS量子点敏化的ZnO纳米棒电极.应用扫描电子显微镜(SEM)、X射线衍射(XRD)和透射电子显微镜(TEM)对CdS量子点/ZnO纳米棒电极的形貌、晶型和颗粒尺寸进行了分析和表征;采用光电流-电位曲线和光电流谱研究了不同CdS循环沉积次数及不同沉积浓度对复合电极的光电性能影响.结果表明,前驱体浓度都为0.1mol·L-1且沉积15次敏化后的ZnO纳米棒阵列电极光电性能最好.与单纯的ZnO纳米棒阵列电极和单纯的CdS量子点电极相比,其光电转换效率显著提高,单色光光子-电流转换效率(IPCE)在380nm处达到76%.这是因为CdS量子点可以拓宽光的吸收到可见光区,并且在所形成的界面上光生载流子更容易分离.荧光光谱实验进一步说明了光电增强的原因是,两者间形成的界面中表面态大大减少,有利于减少光生电子和空穴的复合.     

Assessment of Luminescent Downshifting Layers for the Improvement of Light‐Harvesting Efficiency in Dye‐Sensitized Solar Cells

Luminescence downshifting (LDS) of light can be a practical photon management technique to compensate the narrow absorption band of high‐extinction‐coefficient dyes in dye‐sensitized solar cells (DSSCs). Herein, an optical analysis on the loss mechanisms in a reflective LDS (R‐LDS)/DSSC configuration is reported. For squaraine dye (550–700 nm absorption band) and CaAlSiN₃:Eu²⁺ LDS material (550–700 nm emission band), the major loss channels are found to be non‐unity luminescence quantum efficiency (QE) and electrolyte absorption. By using an ideal LDS layer (QE=100 %), a less absorbing electrolyte (Co‐based), and antireflection coatings, approximately 20 % better light harvesting is obtained. If the absorption/emission band of dye/LDS is shifted to 800 nm, a maximal short‐circuit current density (J_sc) of 22.1 mA cm^?2 can be achieved. By putting the LDS layer in front of the DSSC (transmissive mode), more significant loss channels are observed, and hence a lower overall efficiency than the R‐LDS configuration.     

CuO–ZnO Micro/Nanoporous Array‐Film‐Based Chemosensors: New Sensing Properties to H2S

CuO–ZnO micro/nanoporous array‐films are synthesized by transferring a solution‐dipped self‐organized colloidal template onto a device substrate and sequent heat treatment. Their morphologies and structures are characterized by X‐ray diffraction, field‐emission scanning electron microscopy, transmission electron microscopy, and X‐ray photoelectron spectrum analysis. Based on the sensing measurement, it is found that the CuO–ZnO films prepared with the composition of [Cu²⁺]/[Zn²⁺]=0.005, 0.01, and 0.05 all show a nice sensitivity to 10 ppm H₂S. Interestingly, three different zones exist in the patterns of gas responses versus H₂S concentrations: a platform zone, a rapidly increasing zone, and a slowly increasing zone. Further experiments show that the hybrid CuO–ZnO porous film sensor exhibits shorter recovery time and better selectivity to H₂S gas against other interfering gases at a concentration of 10 ppm. These new sensing properties may be due to a depletion layer induced by p–n junction between p‐type CuO and n‐type ZnO and high chemical activity of CuO to H₂S. This work will provide a new construction route of ZnO‐based sensing materials, which can be used as H₂S sensors with high performances.     

Characterizing the Role of Iodine Doping in Improving Photovoltaic Performance of Dye‐Sensitized Hierarchically Structured ZnO Solar Cells

We report two novel types of hierarchically structured iodine‐doped ZnO (I? ZnO)‐based dye‐sensitized solar cells (DSCs) using indoline D205 and the ruthenium complex N719 as sensitizers. It was found that iodine doping boosts the efficiencies of D205 I? ZnO and N719 I? ZnO DSCs with an enhancement of 20.3 and 17.9 %, respectively, compared to the undoped versions. Transient absorption spectra demonstrated that iodine doping impels an increase in the decay time of I? ZnO, favoring enhanced exciton life. Mott–Schottky analysis results indicated a negative shift of the flat‐band potential (V_fb) of ZnO, caused by iodine doping, and this shift correlated with the enhancement of the open circuit voltage (V_oc). To reveal the effect of iodine doping on the effective separation of e^?‐h⁺ pairs which is responsible for cell efficiency, direct visualization of light‐induced changes in the surface potential between I? ZnO particles and dye molecules were traced by Kelvin probe force microscopy. We found that potential changes of iodine‐doped ZnO films by irradiation were above one hundred millivolts and thus significantly greater. In order to correlate enhanced cell performance with iodine doping, electrochemical impedance spectroscopy, incident‐photon‐current efficiency, and cyclic voltammetry investigations on I? ZnO cells were carried out. The results revealed several favorable features of I? ZnO cells, that is, longer electron lifetime, lower charge‐transfer resistance, stronger peak current, and extended visible light harvest, all of which serve to promote cell performance.     

Strain‐Engineered Modulation on the Electronic Properties of Phosphorous‐Doped ZnO

The modulation of strain on the electronic properties of ZnO:P is investigated by density functional theory calculations. The variation of formation energy (E^f) and band structure with strains ranging from ?0.1 to 0.1 are considered. Although both the conduction band minimum (CBM) and the valence band maximum of ZnO are antibonding states, the CBM is more sensitive to strain, reducing the band gap with an increase in strain. P‐substituted O (P_O) defects show poor p‐type conductivity due to a smaller E^f and lower lying acceptor levels as a consequence of lattice expansion. The E^f of P‐substituted Zn (P_Zn) defects decreases under tension, owing to the release of strong repulsive stress induced by excess electrons from P_Zn. The donor energy band of P_Zn broadens under tensile strain, which benefits n‐type conductivity. For Zn vacancies (V_Zn) and P_Zn–2V_Zn complexes, the distances between the O atoms around V_Zn are so large that repulsive and attractive interactions become weak, which results in an easy release of the strain. We herein present for the first time that the E^f values of V_Zn and P_Zn–2V_Zn complexes decrease under both tension and compression, or in the high‐pressure rock‐salt phase. Under a strain of 0.1 the P_Zn–2V_Zn complex shows the smallest E^f. Under ?0.07 strain the wurtzite/rock‐salt phase transition occurs and the direct band gap becomes an indirect one. The variation of band structures in the rock‐salt phase is similar to that in the wurtzite phase. Consequently, the p‐type conductivity of ZnO:P can be improved with an increase in solubility of P_Zn–2V_Zn or V_Zn defects.     

High‐Performance CsPb1−xSnxBr3 Perovskite Quantum Dots for Light‐Emitting Diodes

All inorganic CsPbBr₃ perovskite quantum dots (QDs) are potential emitters for electroluminescent displays. We have developed a facile hot‐injection method to partially replace the toxic Pb²⁺ with highly stable Sn⁴⁺. Meanwhile, the absolute photoluminescence quantum yield of CsPb_1−x Sn_x Br₃ increased from 45 % to 83 % with Sn^IV substitution. The transient absorption (TA) exciton dynamics in undoped CsPbBr₃ and CsPb_0.67Sn_0.33Br₃ QDs at various excitation fluences were determined by femtosecond transient absorption, time‐resolved photoluminescence, and single‐dot spectroscopy, providing clear evidence for the suppression of trion generation by Sn doping. These highly luminescent CsPb_0.67Sn_0.33Br₃ QDs emit at 517 nm. A device based on these QDs exhibited a luminance of 12 500 cd m⁻², a current efficiency of 11.63 cd A⁻¹, an external quantum efficiency of 4.13 %, a power efficiency of 6.76 lm w⁻¹, and a low turn‐on voltage of 3.6 V, which are the best values among reported tin‐based perovskite quantum‐dot LEDs.     

Poly[μ7‐sulfanediyldiacetato‐disilver(I)]

In the title coordination polymer, [Ag₂(C₄H₄O₄S)], each Ag^I cation is four‐coordinated by three of the four carboxylate O atoms and the S atom from symmetry‐related sulfanediyldiacetate ligands, thus defining a distorted tetrahedral geometry at the metal centre. The Ag^I cations are bridged by sulfanediyldiacetate groups, leading to a two‐dimensional layer structure. These layers are interconnected via Ag—S bonds to form a three‐dimensional coordination polymer network overall.     

CdS/CdSe/TiO2多级空心微球光阳极中量子点覆盖度的提高

TiO₂多级空心微球(THHSs)具有高的比表面积、强的光散射效应以及良好的电子传输性质,以此作为光阳极材料,可以显著提升CdS/CdSe敏化太阳能电池(QDSSCs)的性能。但基于化学浴沉积方法获得的这一类电池中量子点在光阳极表面的覆盖度通常不高(50%左右),本文发展了一种基于表面选择性吸附原理的多步沉积方法,选取特定分子(正十二硫醇)限制已有量子点的生长,通过二次沉积成功提高了CdS/CdSe在TiO₂多级空壳微球表面的覆盖度。使用此方法最终得到高达85.4%的覆盖度。结果表明,量子点覆盖度的增加有效提高了电池对太阳光的利用率,使得光电流获得了明显的增加。同时,二氧化钛空白表面积的减小还可以抑制电子和空穴的复合。优化后的电池光电流密度为15.69 mA·cm^-2,填充因子为0.583,电压为0.605 V,最高光电转换效率为5.30%。