Leaf‐like copper oxide nanocrystals synthesized by a gas‐liquid diffusion method at room temperature

The leaf‐like copper oxide (CuO) nanocrystals have been synthesized by a gas‐liquid diffusion method in pure aqueous solution at room temperature. The structure, morphologies and related properties of the as‐prepared crystals were characterized with X‐ray diffraction (XRD), scanning electron microscopy (SEM), transmission electron microscope (TEM), selected area electron diffraction (SAED) and thermogravimetric analysis (TG). The influence of copper concentration was investigated, which plays an important role in the formation of nanostructured CuO crystals. Only when the copper concentration was low enough (0.005 M) that the leaf‐like CuO could be obtained directly. Additionally, a growth mechanism of CuO was also proposed based on the observed results.     

Synthesis of nanoflakes‐based self‐assembling crossed structure of stannous oxide and photocatalysis property

Self‐assembling nanoflakes‐based crossed architectures of stannous oxide (SnO) were successfully synthesized via template‐free hydrothermal growth method by using SnCl₂·2H₂O and KOH as precursors. Crystal structures, morphology, chemical composition and optical properties were examined by X‐ray diffraction (XRD), field‐emission scanning electron microscopy (FESEM), energy dispersive X‐ray analysis, and Raman spectroscopy, respectively. The results indicate that the as‐synthesized product belongs to tetragonal phase SnO with crossed morphology self‐assembled by nanoflakes. Furthermore, UV‐vis spectrophotometry was used to determine optical band gap of the SnO nanostructures and the direct band gap of 2.90 eV was obtained. The photocatalysis of the product has been evaluated with methyl orange and the high degradation ratio of 87% is obtained in 240 minutes under the measuring condition which is attributed to the wide band gap and large specific surface area of the nanoflakes‐based crossed SnO architectures. A possible growth mechanism is proposed in the end.     

Structural and optical properties of Mg‐doped ZnO thin films prepared by a modified Pechini method

ZnO thin films with different Mg doping contents (0%, 3%, 5%, 8%, 10%, respectively) were prepared on quartz glass substrates by a modified Pechini method. XRD patterns reveal that all the thin films possess a polycrystalline hexagonal wurtzite structure. The peak position of (002) plane for Mg‐doped ZnO thin films shifts toward higher angle due to the Mg doping. The crystallite size calculated by Debey‐Scherrer formula is in the range of 32.95–48.92 nm. The SEM images show that Mg‐doped ZnO thin films are composed of dense nanoparticles, and the thickness of Mg‐doped ZnO thin films with Mg doped at 8% is around 140 nm. The transmittance spectra indicate that Mg doping can increase the optical bandgap of ZnO thin films. The band gap is tailored from 3.36 eV to 3.66 eV by changing Mg doping concentration between 3% and 10%. The photoluminescence spectra show that the ultraviolet emission peak of Mg‐doped ZnO thin films shifts toward lower wavelength as Mg doping content increases from 3% to 8%. The green emission peak of Mg‐doped ZnO thin films with Mg doping contents were 3%, 8%, and 10% is attributed to the oxygen vacancies or donor‐acceptor pair. These results prove that Mg‐doped ZnO thin films based on a modified Pechini method have the potential applications in the optoelectronic devices.     

S-La共掺杂ZnO性能的第一性原理研究

采用基于广义梯度近似的第一性原理方法,研究了纯ZnO、S单掺、La单掺和S-La共掺ZnO的能带结构、态密度和光学性质.S单掺ZnO后,价带和导带同时向低能量转移,导致带隙减小.La单掺ZnO后在导带底产生杂质能级使得带隙减小.S-La共掺ZnO导致La的局部化减弱,表明La形成的施主能级由于S的3 p态的影响变得更浅...     

Structural and optical properties of CdO nanowires synthesized from Cd(OH)2 precursors by calcination

CdO nanowires were produced by calcination process using Cd(OH)₂nanowires as precursors. The Cd(OH)₂ nanowires were synthesized via arc discharge method submerged in de‐ionized water. Transmission electron microscopy (TEM) analysis of the as‐synthesized Cd(OH)₂ nanowires revealed that nanowire morphology was abundant form with the diameters range from 5 to 40 nm. In addition to the nanowire morphology, Cd(OH)₂ nanospheres and hexagonal shaped nanoparticles were also displayed. The Cd(OH)₂ nanostructures were used as precursors to produce CdO nanowires and calcinated in air at 400 °C for four hours. After calcination, the structural, morphological and optical properties of the as‐synthesized CdO nanowires were characterized by means of TEM, selected area electron diffraction (SAED), X‐ray diffraction (XRD) and UV‐vis spectroscopy. The XRD and SAED techniques showed that the as‐synthesized Cd(OH)₂ nanostructures could be transformed into CdO nanostructures after the calcination process. TEM results revealed that the as‐synthesized CdO nanowires were 5–30 nm in diameter and shorter than corresponding Cd(OH)₂ nanowires. In addition, the diameters of the spherical or irregular CdO nanoparticles ranged from 20 nm to 50 nm. UV‐vis spectroscopy analysis was showed that the direct gap of the CdO nanowires were found to be 2.60 eV which is slightly higher than the earlier reported values of the bulk CdO for direct band gaps (2.3 eV) due to quantum size effect. (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Optical and Photocatalytic properties of Mn‐doped CuO nanosheets prepared by hydrothermal method

Mn‐doped CuO nanosheets were prepared through a hydrothermal method to enhance their photocatalytic property. The structural and morphological features were monitored by using X‐Ray diffraction (XRD) and field emission scanning electron microscopy (FESEM) with energy dispersive spectroscopy (EDS). UV‐vis absorption spectra showed the enhance absorption performance both in UV and visible light region. The band gaps were also calculate and the minimum value was 1.25 eV. The photocatalytic activity was investigated by the degradation of methylene blue (MB), which indicated that the photoactivity of samples depended on the amount of Mn²⁺ incorporated into the CuO lattice. The improved performance of photocatalysts can be attributed to enhanced light absorption and lower electron‐hole recombination.     

Properties of Sm‐doped CaNb2O6 thin films deposited by radio‐frequency magnetron sputtering

Sm‐doped CaNb₂O₆ (CaNb₂O₆:Sm) phosphor thin films were prepared by radio‐frequency magnetron sputtering on sapphire substrates. The thin films were grown at several growth temperatures and subsequently annealed at 800 °C in air. The crystallinity, surface morphology, optical transmittance, and photoluminescence of the thin films were investigated by X‐ray diffraction, scanning electron microscopy, ultraviolet‐visible spectrophotometry, and fluorescence spectrophotometry, respectively. All of the thin films showed a main red emission radiated by the transition from the ⁴G_5/2 excited state to the ⁶H_9/2 ground state of the Sm³⁺ ions and several weak bands under ultraviolet excitation with a 279 nm wavelength. The optimum growth temperature for depositing the high‐quality CaNb₂O₆:Sm thin films, which was determined from the luminescence intensity, was found to be 400 °C, where the thin film exhibited an orthorhombic structure with a thickness of 370 nm, an average grain size of 220 nm, a band gap energy of 3.99 eV, and an average optical transmittance of 85.9%. These results indicate that the growth temperature plays an important role in controlling the emission intensity and optical band gap energy of CaNb₂O₆:Sm thin films.     

EDTA‐assisted synthesis of rose‐like ZnO architectures

Rose‐like ZnO nanostructures were prepared by a low‐temperature solution route with assistance of ethylenediaminetetraacetic acid disodium (EDTA‐2Na). The morphology of ZnO nanostructures was found to change from nanowire arrays to rose‐ and tower‐like architectures with increasing the molar ratio of EDTA‐2Na/Zn²⁺. Also, the shape evolution of ZnO nanostructures with time was observed from flat nanosheets to wrinkled nanosheets and to rose‐like nanostructures. EDTA‐2Na as a strong complexing agent was found to play a key role in the shape evolution. Photoluminescence spectra show that the rose‐like ZnO architectures have more defects than the nanowire arrays. (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Growth and high frequency dielectric study of pure and thiourea doped KDP crystals

Non linear optical (NLO) materials have acquired new significance with the advent of a large number of devices utilizing solid‐state laser sources. Several NLO materials have been used for this kind of technological applications. The Potassium di‐hydrogen phosphate (KDP) one of NLO material having superior non linear optical properties has been exploited for variety of applications. In the present investigation we have grown KDP crystals from aqous solution with thiourea, an organic non linear optical material. We could enhance the SHG efficiency of thiourea doped KDP crystal. It was 1.99 times more that of pure KDP. We observed more enhancements in nonlinearity for low concentration of thiourea.The crystal structure and cell parameters of grown crystal were determined from Powder XRD.The incorporation of thiourea in the grown crystals was qualitatively analyzed from FT‐IR study. The absorption spectra of pure and thiourea doped KDP crystal reveal that thiourea doped KDP crystals would be a better nonlinear optical (NLO) material for second harmonic generation (SHG) than pure KDP. The thermal decomposition and weight loss of pure and thiourea doped KDP crystal was observed by thermogravimetric (TGA) analysis and Differential Scanning Calorimetry (DSC). The high frequency dielectric study of pure KDP crystal, thiourea doped KDP crystals and organic additive thiourea was carried out using X‐band at frequency 8GHZ and 12GHZ by transmission line wave guide method. We observed low dielectric constant of thiourea doped KDP crystal when it is doped with 2mole% of thiourea. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Controlled growth of ZnO torch‐like nanostructure arrays

Single‐crystal ZnO torch‐like nanostructure arrays were synthesized using a simple two‐step pressure controlled thermal evaporation method without any catalyst. The nanostructures had a hierarchical morphology, with well‐hexagonal faceted holders and needle‐like flames on them. The diameter of each single flame was about 20–40nm at the base and 10nm at the tip. Both the holders and flames were found to grow along the [0001] direction. The morphology of the structures could be effectively controlled by varying the growth temperature and vacuum pressure. The experimental results and analysis provided easy strategies to control the morphology of nanostructures and also enhanced the understanding of the growth mechanism. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Morphology and photoluminescence properties of ZnO nanostructures fabricated with different given time of Ar

ZnO nanostructures were grown on Au‐coated Si (100) substrates by carbonthermal reduction method with the help of Ar at the beginning of growth. The structural and optical properties of ZnO nanostructures strongly depended on the supply time of Ar. When the given time of Ar gas current was 90s, sample was ZnO nanowires with hexagonal morphology. The Raman spectroscopy revealed the low level of oxygen vacancies and Zn interstitials in samples. Room temperature photoluminescence (PL) spectra exhibited the intensity of green emission increased on the condition of rich oxygen (decrease given time of Ar) and the nanowire had strongest intensity of UV emission compared with other nanostructures. Green emission is ascribed to the electron transition from the bottom of the conduction band to the antisite defect O_Zn level. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Microstructure and cathodoluminescence study of GaN nanowires without/with P‐doping

In this work, P‐doped GaN nanowires were synthesized in a co‐deposition CVD process and the effects of P‐doping on the microstructure and cathodoluminescence (CL) of GaN nanowires were studied in details. SEM observation and CL measurments demonstrated that P‐doping has led to a rough morphology evolution and a depression of the band‐gap emission of GaN nanowires, whereas the visible emission of GaN nanowires was obviously enhanced. Finally, the corresponding morphology transition and optical properties of GaN nanowires with P‐doping were discussed. (© 2012 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Morphology‐controllable synthesis of ZnO nano‐/micro‐ structures by a solvothermal process in ethanol solution

Flower‐like ZnO nanostructures assembled by nanorods with bimodal size distribution have been synthesized by a solvothermal process in NaOH‐Et system. Various effects of the solvothermal parameters and assistant additives on the morphologies of ZnO nanostructures have been investigated. The directing effect of chloride ions have been observed in the formation of highly symmetrical 3D ZnO nanostructures. A possible mechanism has been proposed to explain the formation of ZnO nanoflowers in NaOH‐Et system. A strong near‐UV emission band centered at around 396 nm is observed in the photoluminescence spectrum of flower‐like ZnO nanostructures, indicating of their high crystal quality.     

Y掺杂WS2二维材料的第一性原理研究

WS₂由于其优异的物理和光电性质引起了广泛关注。本研究基于第一性原理计算方法,探索了本征单层WS₂及不同浓度W原子替位钇(Y)掺杂WS₂的电子结构和光学特性。结果表明本征单层WS₂为带隙1.814 eV的直接带隙半导体。进行4%浓度(原子数分数)的Y原子掺杂后,带隙减小为1.508 eV,依旧保持着直接带隙的特性,随着Y掺杂浓度的不断增大,掺杂WS₂带隙进一步减小,当浓度达到25%时,能带结构转变为0.658 eV的间接带隙,WS₂表现出磁性。适量浓度的掺杂可以提高材料的导电性能,且掺杂浓度增大时,体系依旧保持着透明性并且在红外光和可见光区对光子的吸收能力、材料的介电性能都有着显著提高。本文为WS₂二维材料相关光电器件的研究提供了理论依据。     

Characterization of nanocrystalline cobalt doped TiO2 sol–gel material

Nanocrystalline 1%, 2% and 4% Cobalt-doped TiO₂ were prepared by sol–gel technique, followed by freeze-drying treatment at ?30 °C temperature for 12 h. The obtained gels were thermally treated at 200, 400, 600 and 800 °C. X-ray Powder Diffraction (XRD), Scanning Electron microscopy (SEM), Energy-dispersive X-ray spectroscopy (EDAX) were used to study its structural properties. The XRD pattern shows the coexistence of anatase phase and minor brookite phase. UV–vis Spectroscopy and Photoluminescence (PL) were used to study its optical properties. Optical band gap was calculated with the incorporation of different concentrations of cobalt. UV–visible spectroscopy shows variation in band gap for the sample treated at different temperatures for same concentration. All Cobalt doped TiO₂ nanostructures show an appearance of Red shift relative to the bulk TiO₂. The determination of magnetic properties was also carried out by Gouy balance method.     

Investigation of structural,electronic and optical properties of pure and Ag‐doped TiO2 nanofibers fabricated by electrospinning

Pure and 1, 2, and 3 wt% Ag doped TiO₂ nanofibers were prepared by electrospinning method at different applied voltages and heights at a constant flow rate of 2 mL/h. Characterization of the prepared samples was performed by x‐ray diffraction (XRD), scanning electron microscopy (SEM), atomic force microcopy (AFM),four point probe method (FPPM), the differential scanning calorimetry/the thermal gravimetric analysis (DSC/TGA), ultraviolet/visible spectrometry (UV/VIS), and energy dispersive X‐ray spectrometer (EDX). It was found that the thermally untreated pure TiO₂ nanofibers and thermally treated (at 500 °C) samples have the crystalline phase of anatase (A), and mixed anatase and rutile (A+R) phases, respectively. It was also observed that the content of the silver does not affect the crystal structure, but plays strengthening role in the rutile structure. SEM micrographs showed that all fabricated nanofiber samples have uniform morphologies, and AFM measurements indicated that the nanofibers were formed in three‐dimensional coils. The band gap values of the nanofiber samples obtained from UV/VIS measurements revealed that band gap values of the nanofiber samples decrease while the diameter of the nanofiber increases.     

Ni、Mo共掺杂对SnO2材料性能影响的仿真研究

针对AgSnO₂触头材料存在的不足,采用基于密度泛函理论的第一性原理对SnO₂、Ni单掺杂、Mo单掺杂以及Ni-Mo共掺杂SnO₂材料进行了电性能与力学性质的研究,计算了各体系的形成能、能带结构、态密度、弹性常数等各项参数。结果表明,掺杂后的材料可以稳定存在,且仍为直接带隙半导体材料。与未掺杂相比,掺杂后体系的能带结构带隙值减少,其中Ni-Mo共掺杂时的带隙值最小,载流子跃迁所需能量减少,极大地改善了SnO₂的电性能;由弹性常数计算了剪切模量、体积模量、硬度等参数,其中Ni-Mo共掺杂时的硬度大幅降低,韧性增强,有利于AgSnO₂触头材料后续加工成型,且其普适弹性各向异性指数最小,不易形成裂纹。综合各项因素,Ni-Mo共掺杂能够很好地改善SnO₂的性能,为触头材料的发展提供了理论指导。     

P和As掺杂Mn4Si7第一性原理计算

采用第一性原理计算方法,对本征Mn₄Si₇以及P和As掺杂的Mn₄Si₇的电子结构和光学性质进行计算解析。计算结果表明本征Mn₄Si₇是带隙值为0.810 eV的间接带隙半导体材料,P掺杂Mn₄Si₇的带隙值增大为0.839 eV,As掺杂Mn₄Si₇的带隙值减小为0.752 eV。掺杂使得Mn₄Si₇的能带结构和态密度向低能方向移动,同时使得介电函数的实数部分在低能区明显增大,虚数部分几乎全部区域增加且8 eV以后趋向于零。此外掺杂还增加了高能区的消光系数、吸收系数、反射系数以及光电导率,明显改善了Mn₄Si₇的光学性质。     

Growth,structure and optical characterization of Al‐doped ZnO nanoparticle thin films

Al‐doped ZnO nanoparticle thin films were prepared on glass substrate at the optimum temperature of (410±10) °C by spray pyrolysis technique using zinc nitrate as a precursor solution and aluminium chloride as a dopant. The dopant concentration (Al/Zn at%) was varied from 0 to 2 at%. Structural analysis of the films shows that all the films are of polycrystalline zinc oxide in nature, possessing hexagonal wurtzite structure. The films exhibit variation in peak intensities corresponding to (100), (002) and (101) reflection planes on Al‐doping. The crystallite size calculated by Scherrer formula has been found to be in the range of 35‐65 nm. The optical absorption study shows that the optical band gap in the Al‐doped films varies in the range of 3.11 – 3.22 eV. The width of localized states in the band gap estimated by the Urbach tail analysis has been found to be minimum in case of the 1 at% Al‐doped zinc oxide thin film. (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Mg掺杂对CaMnO3基热电氧化物电子结构及电性能的影响研究

采用超软赝势密度泛函理论计算的方法研究了Mg掺杂Ca位CaMnO3基复合氧化物的能带结构、电子态密度和电荷分布状况,在此基础上分析了Mg掺杂氧化物的电性能.结果表明,Mg掺杂CaMnO3氧化物仍然呈间接带隙型能带结构,带隙宽度由0.756eV减小到0.734eV.CaMnO3氧化物和Mg掺杂CaMnO3氧化物的自旋态密度曲线极值点均位于为-0.8eV附近.Mg掺杂CaMnO3氧化物中Mn原子对体系费米面态密度的贡献有所减小,O原子和Ca原子对体系费米面态密度的贡献有所增大.Mg原子比Ca原子具有更强的释放电子的能力,Mg掺杂对于CaMnO3氧化物属于电子型掺杂.Mg掺杂CaMnO3氧化物导电性能增强,电性能提高.