Flux growth of straw‐like rutile monocrystals

Millimetric straw‐like rutile monocrystals were grown by the flux growth technique. A suitable mixture of flux (MoO₃, V₂O₅, Li₂CO₃) and amorphous TiO₂ gel was slowly cooled down to 750°C from 1250°C or 1350°C. The best yields of straw‐like rutile were obtained with a nutrient/flux ratio and a cooling rate in the range 0.015‐0.006 and 1.8‐1.9 K h^‐1, respectively. The hollowed crystals were characterized by powder and single‐crystal X‐ray diffraction, scanning electron microscopy, microthermometry, and µ‐Raman spectroscopy. As for skeletal crystal, the formation of axial canals in rutile is attributed to a lack of nutrient due to the viscosity of the melt and the high growth rate along [001]. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Single crystals of barium substituted rare-earth orthomanganites

The single crystals from the series of Re_1-xBa_xMnO₃ solid solutions (Re = Pr, Nd) were prepared by the flux growth from the melt containing 0.41 BaO — 0.18 BaF₂ — 0.41 B₂O₃. as the flux constituents. The conditions of the growth, in particular the liquidus curves of the relevant pseudobinary systems, were determined by the high-temperature microscope technique. The prepared crystals were characterized by X-ray and chemical analysis.     

Raman scattering study of crystalline and melting states of BaO·2B2O3

Melting and crystallization scenarios of barium tetraborate BaB₄O₇ (BaO·2B₂O₃) are studied in situ by Raman spectroscopy. It is shown that the scenario depends on the temperature–time history of melt. Crystallization conditions of the beta modification of barium tetraborate (β-BaB₄O₇) from a stoichiometric glass structure BaO·2B₂O₃ were investigated.     

Crystallization of a germanium melt in an external electric field

Data are presented on experimental studies of the influence of an external electric field on crystallization of a germanium melt under the layer of a B₂O₃ flux. It has been found out that with the field supercoolings of the melt sharply change. This effect is due to the change of the number of active nucleation centres at the germanium – B₂O₃ flux interface. The maximum supercoolings of the germanium melt ΔT⁻ = 190 K were obtained when a negative potential was connected to germanium. The dependences of supercooling on preliminary melt overheating were measured.     

Crystal structure,dielectric properties of (K0.5Na0.5)NbO3 single crystal grown by flux method using B2O3 flux

Lead free piezoelectric single crystals of sodium potassium niobate (K_0.5Na_0.5)NbO₃ (KNN) were grown by high‐temperature solution method using two different fluxes; one with a mixture of NaF and KF and other with addition of B₂O₃ along with the mixture. In the present study, the growth of KNN crystals without B₂O₃ flux and the same with B₂O₃ flux were compared. It was found that additions of small amounts of B₂O₃ lowered the melting temperature of the solid solution and enabled better dielectric properties. Phase analysis showed that all samples were crystallized in pure orthorhombic perovskite phase. AFM morphological studies showed that the addition of B₂O₃ flux increased the roughness of the grown crystal. Further, addition of B₂O₃ flux slightly decreased the orthorhombic to tetragonal phase transition temperature T_(O—T) and the Curie temperature T_C. The ferroelectric behaviour of KNN single crystal has been investigated at room temperature. The crystal grown using B₂O₃ flux exhibited a remanent polarization (P_r) ∼ 32 μC/cm² and coercive field (Ec) of ∼11.8 kV/cm whereas the crystal grown without the use of B₂O₃ flux had a remanent polarization (P_r) ∼ 36 μC/cm² and coercive field (Ec) of ∼14.6 kV/cm.     

Calculation of thermodynamic parameters of melts from experimentally determined liquidus‐curves

Thermodynamic parameters of melts (ΔH_S, A₀, A₁) in the system Anorthite‐Diopside and Bi₂O₃‐Bi₄B₂O₉ have been calculated by a rigorous application of solution thermodynamics. The data are internally consistent and yield values of ΔH_S for Anorthite = 133 kJ/mole, Diopside = 81 kJ/mole, Bi₂O₃ = 19 kJ/mole and Bi₄B₂O₉ = 39 kJ/mole. The activity of Anorthite and Diopside in an anorhtitic melt deviates negative from ideality, whereas a diopsidic melt behaves almost ideal. In a “Bi₂O₃” melt the activity of the Bi₂O₃ component is strongly positive, that of Bi₄B₂O₉ is strongly negative. The opposite is observed for the “Bi₄B₂O₉” melt. All calculated liquidi except the Bi₄B₂O₉ liquidus closely match the experimental ones. In contrast to the experimental liquidus the calculated Bi₄B₂O₉ liquidus has an inflection point. The crest of the metastable spinode (solvus) for a “Bi₂O₃” melt is close to the liquidus indicating melt separation at undercooling. (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Quantitation of sulfate solubility in borosilicate glasses using Raman spectroscopy

Raman spectroscopy is used here as an innovative technique to investigate sulfate content in borosilicate glasses. Using Raman spectroscopy after having heated the material, the evolution of sulfate amounts can be followed as a function of temperature, time and chemical composition of the starting matrix. The accuracy of this technique was verified using electron probe micro analysis (EPMA), on two systems of glasses (SiO₂–B₂O₃–Na₂O (SBNa) and SiO₂–B₂O₃–BaO (SBBa)) in order to compare the effect of alkaline or alkaline-earth elements on sulfur speciation and incorporation. To quantitate sulfate content with Raman spectroscopy, the integrated intensity of the sulfate band at 990 cm^?1 was scaled to the sum of the integrated bands between 850 and 1250 cm^?1, bands that are assigned to Qⁿ silica units. Calibration curves were then determined for different samples. The determination of sulfate contents with Raman spectroscopy analysis is possible with an accuracy of approximately 0.1 wt% depending on the composition of the glass. It mainly allows us to follow sulfate removal during the elaboration process and to establish kinetic curves of sulfate release as a function of the viscosity of the borosilicate glass.     

The influence of the melt cooling rate on the properties of YIG single crystal grown by the flux method form sintered polycrystalline maeteral

A method for the single crystal growth of Yttrium Iron Garnet (YIG) in a PbO/PbF₂/B₂O₃ flux mixture with a melt cooling rate of 1–2.5 °C/h is described. In order to keep constant the crystal stoichiometry as well as its specific structural and magnetic properties at such high rates of the cooling process, a previously sintered polycrystalline garnet has been used as raw material. The YIG single crystal quality was checked-up by metallographic analysis, X-ray diffraction, SEM, and magnetic susceptibility measurements.     

Flux growth and morphology analysis of Na3VO2B6O11 crystals

Colorless and transparent Na₃VO₂B₆O₁₁ (NVB) crystal has been grown by the top seeded solution growth method using NaVO₃ as the flux at cooling rates of 0.8–1.5 °C/day, in the temperature range 610–650 °C. A well-developed morphology of the crystals was observed and analyzed. The grown crystals were characterized by powder X-ray diffraction (PXRD), infrared spectroscopy and second harmonic generation (SHG) test.     

Effect of Al2O3 on the viscosity and structure of calcium silicate-based melts containing Na2O and CaF2

The effect of Al₂O₃ on viscosity in the calcium silicate melt-based system containing Na₂O and CaF₂ was investigated and correlated with the melt structure using FTIR (Fourier transform infrared) spectroscopy, XPS (X-ray photoelectron spectroscopy), and Raman spectroscopy. Substituting SiO₂ with Al₂O₃ modified the dominant silicate network into a highly structured alumino-silicate structure with the aluminate structure being particularly prevalent at 20 mass% of Al₂O₃ and higher. As the melts become increasingly polymerized with higher Al₂O₃ content, the fraction of symmetric Al–O⁰ stretching vibrations significantly increased and the viscosity increased. XPS showed a decrease in the amount of non-bridged oxygen (O^?) but an increase in bridged oxygen (O⁰) and free oxygen (O^2?) with higher Al₂O₃. Although changes in the structure and viscosity with higher CaO/(SiO₂ + Al₂O₃) were not significant, the symmetric Al–O⁰ stretching in the [AlO₄]^5?-tetrahedral units decreased. The apparent activation energy for viscous flow varied from 118 to 190 kJ/mol.     

Characterization of SHG candidate crystals in barium aluminum (gallium) borates

Crystals listed in the JCPDS card in BaO‐B₂O₃‐Al₂O₃ and BaO‐B₂O₃‐Ga₂O₃ systems were synthesized by means of a solid‐state reaction method and a liquid‐state reaction method. Synthesized crystals were characterized from a viewpoint of Second Harmonic Generation (SHG) and crystal growth possibility. Ba₅Al₄B₁₂O₂₉ and Ba₅Ga₄B₁₂O₂₉ are promising new candidate crystals from the viewpoint of SHG activity and congruent melting behavior. (© 2004 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Growth of big single crystals of a new magnetic superconducting double perovskite Ba2PrRu1–xCuxO6

Single crystals of Ba₂PrRu_1–xCu_xO₆ with x = 0 to 0.2, have been grown from high temperature solutions of a mixture of PbO‐PbF₂ in the temperature range 1100–1200 °C. Thin crystals with mostly a hexagonal and triangular plate like habit measuring up to 1–2 mm across and 0.1–0.2 mm thick were obtained. The size, quality and morphology of the crystals were improved by varying the solution volume as well as additives like B₂O₃. Large crystals measuring up to 3 mm across and 0.3 to 0.5 mm thick were obtained with 5–7 wt% solute concentration and 0.51 wt% of B₂O₃. The ZFC curves exhibit a spin glass like behavior with x = 0 and a superconducting transition at 8 to 11 K depending on x = 0.05 to 0.1. The transition was also influenced by the growth temperature and post growth annealing. Powder x‐ray diffraction, EDS and Raman spectroscopic measurements confirm the presence of Cu in the crystals. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Phase equilibria and prospects of crystal growth in the system LiF–GdF3–LuF3

Scheelite type LiGdF₄, LiLuF₄, and mixtures of both end members were prepared by a hydrofluorination route from the rare earth oxides and commercial LiF. The samples were purified by melting in HF/Ar mixtures, and were investigated by differential scanning calorimetry (DSC), scanning electron microscopy (SEM), and energy dispersive X‐ray spectroscopy (EDX) techniques. Both end members show unlimited miscibility in the solid phase. Mixed crystals containing at least 65 mol‐% LiLuF₄ melt under direct formation of the liquid phase. The gap between solidus and liquidus is narrow. LiGdF₄ and mixed crystals with less then 65 mol‐% LiLuF₄ decompose peritectically under formation of (Gd,Lu)F₃. Crystal growth is expected to be possible either from Lu‐rich melts with the appropriate scheelite composition or from Gd‐rich melts containing an excess of LiF. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Reduction of grown-in dislocation density in Ge Czochralski-grown from the B2O3-partially-covered melt

Germanium (Ge) single crystals with an extremely low density of grown-in dislocations were grown by the Czochralski (CZ) technique with boron oxide (B₂O₃) liquid. Because attachment of particles floating on the melt surface to a growing Ge crystal leads to generation of dislocations during the growth, partial covering of the Ge melt surface with B₂O₃ liquid was attempted. Such attachment of particles was drastically suppressed or the particles were caught by the introduction of B₂O₃ liquid, and a particle-free Ge melt was realized in the central region of the melt surface. Ge single crystals were successfully grown from such melt, the grown-in dislocation density being 0–1×10³ cm⁻², which was remarkably lower than that in Ge crystals grown by a conventional CZ technique. The contaminations by B and O atoms of the grown crystal detected by SIMS analysis were very low. These Ge crystals have the potential for application to be applied as high-quality, dislocation-free substrates of GaAs solar cells for various usages including in space.     

Ionic conductivity of Li2OB2O3 thin films

The ionic conductivity of evaporated Li₂OB₂O₃ thin films has been studied. These thin films were found to show a considerably high ionic conductivity of 1 × 10^?7 Ω^?1 cm^?1 at room temperature. The conductivity increases with increasing Li content and exhibits a maximum value near 3Li₂O·B₂O₃. The structure of these films was determined using infrared absorption and laser Raman scattering spectroscopy. Using the results, the correlation between structure and conductivity is also discussed.     

Investigation of single crystal growth of GaPO4 by the flux method

GaPO₄ crystals have been grown by a spontaneous nucleation method and the top-seeded solution growth method using three different solvents, 3MoO₃-Li₂O, 3MoO₃-K₂O and 2KPO₃-5MoO₃-3LiF. All of the as-grown crystals were characterized by means of X-ray powder diffraction. The results show that all the crystals were well crystallized and belong to the point group 32, and 2KPO₃-5MoO₃-3LiF flux is the best for nucleation and growth of transparent GaPO₄ crystals. The infrared spectrum of GaPO₄ single crystal obtained by the flux method shows that there is no incorporation of OH groups during the crystallization, which is beneficial for high temperature piezoelectric applications.     

Deep-UV Raman spectroscopic analysis of structure and dissolution rates of silica-rich sodium borosilicate glasses

As part of ongoing studies to evaluate relationships between structure and rates of dissolution of silicate glasses in aqueous media, sodium borosilicate glasses of composition Na₂O·xB₂O₃·(3 − x)SiO₂, with x ≤ 1 (Na₂O/B₂O₃ ratio ≥ 1), were analyzed using deep-UV Raman spectroscopy. Results were quantified in terms of the fraction of SiO₄ tetrahedra with one non-bridging oxygen (Q³) and then correlated with Na₂O and B₂O₃ content. The Q³ fraction was found to increase with increasing Na₂O content, in agreement with studies on related glasses, and, as long as the value of x was not too high, this contributed to higher rates of dissolution in single pass flow-through testing. In contrast, dissolution rates were less strongly determined by the Q³ fraction when the value of x was near unity, and appeared to grow larger upon further reduction of the Q³ fraction. Results were interpreted to indicate the increasingly important role of network hydrolysis in the glass dissolution mechanism as the BO₄ tetrahedron replaces the Q³ unit as the charge-compensating structure for Na⁺ ions. Finally, the use of deep-UV Raman spectroscopy was found to be advantageous in studying finely powdered glasses in cases where visible Raman spectroscopy suffered from weak Raman scattering and fluorescence interference.     

Hydrothermal synthesis and formation of 4ZnO·B2O3·H2O whiskers via a new route

4ZnO·B₂O₃·H₂O whiskers were prepared from 2ZnO·3B₂O₃·3.5H₂O under hydrothermal process at 160 °C for 10 h. The synthesized product was characterized by XRD, SEM, TG‐DSC and FT‐IR. SEM results showed that the synthesized 4ZnO·B₂O₃·H₂O whiskers' length was about 3–10 μm and the diameter was 0.2–0.3 μm. Further study on the whiskers' growth process and mechanism showed that the formation of the whiskers went through three stages and the morphology of 4ZnO·B₂O₃·H₂O changed from irregular particles to rod‐like structures and finally to whiskers. The variation of the morphology of the 4ZnO·B₂O₃·H₂O whisker with the concentration of the starting material was investigated. (© 2012 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Czochralski-growth of germanium crystals containing high concentrations of oxygen impurities

Oxygen-containing germanium (Ge) single crystals with low density of grown-in dislocations were grown by the Czochralski (CZ) technique from a Ge melt, both with and without a covering by boron oxide (B₂O₃) liquid. Interstitially dissolved oxygen concentrations in the crystals were determined by the absorption peak at 855 cm⁻¹ in the infrared absorption spectra at room temperature. It was found that oxygen concentration in a Ge crystal grown from melt partially or fully covered with B₂O₃ liquid was about 10¹⁶ cm⁻³ and was almost the same as that in a Ge crystal grown without B₂O₃. Oxygen concentration in a Ge crystal was enhanced to be greater than 10¹⁷ cm⁻³ by growing a crystal from a melt fully covered with B₂O₃; with the addition of germanium oxide powder, the maximum oxygen concentration achieved was 5.5×10¹⁷ cm⁻³. The effective segregation coefficients of oxygen in the present Ge crystal growth were roughly estimated to be between 1.0 and 1.4.     

Evaporation induced diameter control in fiber crystal growth by micro‐pulling‐down technique: Bi4Ge3O12

Diameter self‐control was established in Bi₄Ge₃O₁₂ fiber crystal growth by micro‐pulling‐down technique. In accordance with Bi₂O₃‐GeO₂ phase diagram, the diameter was controlled due to compensation of solidification with evaporation of volatile Bi₂O₃ self‐flux charged into the crucible with excess. The crucibles had capillary channels of 310 or 650 μm in outer diameter. The crystals up to 400 mm long and 50‐300 μm in diameter were grown at pulling‐down rates of 0.04‐1.00 mm/min. The melt composition and the pulling rate were generally only two parameters determining solidification rate. As a result, crystals with uniform (± 10%) diameter and aspect ratio up to 10⁴ were produced without automation of the process. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)