A wavelet‐PCA method saves high mass resolution information in data treatment of SIMS molecular depth profiles

A detailed depth characterization of multilayered polymeric systems is a very attractive topic. Currently, the use of cluster primary ion beams in time‐of‐flight secondary ion mass spectrometry allows molecular depth profiling of organic and polymeric materials. Because typical raw data may contain thousands of peaks, the amount of information to manage grows rapidly and widely, so that data reduction techniques become indispensable in order to extract the most significant information from the given dataset. Here, we show how the wavelet‐based signal processing technique can be applied to the compression of the giant raw data acquired during time‐of‐flight secondary ion mass spectrometry molecular depth‐profiling experiments. We tested the approach on data acquired by analyzing a model sample consisting of polyelectrolyte‐based multilayers spin‐cast on silicon. Numerous wavelet mother functions and several compression levels were investigated. We propose some estimators of the filtering quality in order to find the highest ‘safe’ approximation value in terms of peaks area modification, signal to noise ratio, and mass resolution retention. The compression procedure allowed to obtain a dataset straightforwardly ‘manageable’ without any peak‐picking procedure or detailed peak integration. Moreover, we show that multivariate analysis, namely, principal component analysis, can be successfully combined to the results of the wavelet‐filtering, providing a simple and reliable method for extracting the relevant information from raw datasets. Copyright © 2016 John Wiley & Sons, Ltd.     

Investigation of the depth‐profiling capabilities of the Storing Matter technique

The so‐called Storing Matter technique allows the matrix effect observed in secondary ion mass spectrometry to be successfully circumvented. We therefore investigate in this work the depth‐profiling capabilities of the Storing Matter technique with a goal of developing protocols for quantitative depth profiles. The effect of the steps involved in the Storing Matter process on the main parameters such as the depth resolution and the dynamic range is studied experimentally and by simulations. A semi‐automated process consisting of the sputter‐deposition process on a rotating collector in the Storing Matter instrument followed by a complete analysis of the collector by secondary ion mass spectrometry is defined. This protocol is applied to depth profile a B implant in Si and a Sn/Zn multilayered sample, and the results are compared with those obtained with conventional secondary ion mass spectrometry. Copyright © 2015 John Wiley & Sons, Ltd.     

Precise and fast secondary ion mass spectrometry depth profiling of polymer materials with large Ar cluster ion beams

We demonstrate depth profiling of polymer materials by using large argon (Ar) cluster ion beams. In general, depth profiling with secondary ion mass spectrometry (SIMS) presents serious problems in organic materials, because the primary keV atomic ion beams often damage them and the molecular ion yields decrease with increasing incident ion fluence. Recently, we have found reduced damage of organic materials during sputtering with large gas cluster ions, and reported on the unique secondary ion emission of organic materials. Secondary ions from the polymer films were measured with a linear type time‐of‐flight (TOF) technique; the films were also etched with large Ar cluster ion beams. The mean cluster size of the primary ion beams was Ar₇₀₀ and incident energy was 5.5 keV. Although the primary ion fluence exceeded the static SIMS limit, the molecular ion intensities from the polymer films remained constant, indicating that irradiation with large Ar cluster ion beams rarely leads to damage accumulation on the surface of the films, and this characteristic is excellently suitable for SIMS depth profiling of organic materials. Copyright © 2009 John Wiley & Sons, Ltd.     

Molecular depth profiling of multilayer structures of organic semiconductor materials by secondary ion mass spectrometry with large argon cluster ion beams

In this study, we present molecular depth profiling of multilayer structures composed of organic semiconductor materials such as tris(8‐hydroxyquinoline)aluminum (Alq₃) and 4,4′‐bis[N‐(1‐naphthyl)‐N‐phenylamino]biphenyl (NPD). Molecular ions produced from Alq₃ and NPD were measured by linear‐type time‐of‐flight (TOF) mass spectrometry under 5.5 keV Ar₇₀₀ ion bombardment. The organic multilayer films were analyzed and etched with large Ar cluster ion beams, and the interfaces between the organic layers were clearly distinguished. The effect of temperature on the diffusion of these materials was also investigated by the depth profiling analysis with Ar cluster ion beams. The thermal diffusion behavior was found to depend on the specific materials, and the diffusion of Alq₃ molecules was observed to start at a lower temperature than that of NPD molecules. These results prove the great potential of large gas cluster ion beams for molecular depth profiling of organic multilayer samples. Copyright © 2009 John Wiley & Sons, Ltd.     

Atomic/molecular depth profiling of nanometric‐metallized polymer thin films by secondary ion mass spectrometry

The capability of secondary ion mass spectrometry (SIMS) to perform atomic and molecular in‐depth analysis in complex nanometric‐metallized thin polymer films used to manufacture capacitors is demonstrated through three different case studies related to failure analysis. The excellent repeatability and sensitivity of the technique allow us to study the degradation process of the nanometric‐metallized layer in the capacitor films and the accurate location of the metal‐polymer interface. The analysis of the sample is challenging due to the extreme difference in conductivity between layers, and the reduced thickness of the metallization grown on top of a rough polymeric base. However, SIMS has provided reliable and reproducible results with relative standard deviation (RSD) values better than 1.5% in the metallic layer thickness estimation. The detailed information of atomic and molecular ion in‐depth distributions provided by SIMS depth profiling has allowed the identification of different factors (demetallization, generation of interstitial oxide regions, and diffusion processes or modification in the metallization thickness) that can be directly related to the origin of the lack of performance of the mounted devices. Copyright © 2010 John Wiley & Sons, Ltd.     

Effect of SIMS ionization probability on depth resolution for organic/inorganic interfaces

Secondary ion mass spectrometry (SIMS) relies on the fact that surface particles ejected from a solid surface are ionized under ion bombardment. By comparing the signal of molecular secondary ions desorbed from an organic film with that of the corresponding sputtered neutral precursor molecules, we investigate the variation of the molecular ionization probability when depth profiling through the film to the substrate interface. As a result, we find notable variations of the ionization probability both at the original surface and in the interface region, leading to a strong distortion of the measured SIMS depth profile. The experiments show that the effect can act in two ways, leading either to an apparent broadening or to an artificial sharpening of the observed film‐substrate transition. As a consequence, we conclude that care must be taken when assessing interface location, width, or depth resolution from a molecular SIMS depth profile.     

An effect of measurement conditions on the depth resolution for low‐energy dual‐beam depth profiling using TOF‐SIMS

An effect of measurement conditions on the depth resolution was investigated for dual‐beam time of flight‐secondary ion mass spectrometry depth profiling of delta‐doped‐boron multi‐layers in silicon with a low‐energy sputter ion (200 eV – 2 keV O₂⁺) and with a high‐energy primary ion (30 keV Bi⁺). The depth resolution was evaluated by the intensity ratio of the first peak and the subsequent valley in B⁺ depth profile for each measurement condition. In the case of sputtering with the low energy of 250 eV, the depth resolution was found to be affected by the damage with the high‐energy primary ion (Bi⁺) and was found to be correlated to the ratio of current density of sputter ion to primary ion. From the depth profiles of implanted Bi⁺ primary ion remaining at the analysis area, it was proposed that the influence of high‐energy primary ion to the depth resolution can be explained with a damage accumulation model. Copyright © 2013 John Wiley & Sons, Ltd.     

Depth profiling in secondary ion mass spectrometry for ultra‐thin layer with nanometer order thickness by mesa‐structure fabrication

We attempted to make an accurate depth profiling in secondary ion mass spectrometry (SIMS) including backside SIMS for ultra‐thin nanometer order layer. The depth profiles for HfO₂ layers that were 3 and 5 nm thick in a‐Si/HfO₂/Si were measured using quadrupole and magnetic sector type SIMS instruments. The depth profiling for an ultra‐thin layer with a high depth resolution strongly depends on how the crater‐edge and knock‐on effects can be properly reduced. Therefore, it is important to control the analyzing conditions, such as the primary ion energy, the beam focusing size, the incidence angle, the rastered area, and detected area to reduce these effects. The crater‐edge effect was significantly reduced by fabricating the sample into a mesa‐shaped structure using a photolithography technique. The knock‐on effect will be serious when the depth of the layer of interest from the surface is located within the depth of the ion mixing region due to the penetration of the primary ions. Finally, we were able to separately assign the origin of the distortion to the crater‐edge effect and knock‐on effect. Copyright © 2012 John Wiley & Sons, Ltd.     

A comparison of electron ionization mass spectra obtained at 70 eV,low electron energies,and with cold EI and their NIST library identification probabilities

Electron ionization (EI) mass spectra of 46 compounds from several different compound classes were measured. Their molecular ion abundances were compared as obtained with 70‐eV EI, with low eV EI (such as 14 eV), and with EI mass spectra of vibrationally cold molecules in supersonic molecular beams (Cold EI). We further compared these mass spectra in their National Institute of Standards and Technology (NIST) library identification probabilities. We found that

1. Low eV EI is not a soft ionization method, and it has little or no influence on the molecular ion relative abundances for large molecules and those with weak or no molecular ions.
2. Low eV EI for compounds with abundant or dominant molecular ions in their 70 eV mass spectra results in the reduction of low mass fragment ions abundances thereby reducing their NIST library identification probabilities thus rarely justifies its use in real‐world applications.
3. Cold EI significantly enhances the relative abundance of the molecular ions particularly for large compounds; yet, it retains the low mass fragment ions; hence, Cold EI mass spectra can be effectively identified by the NIST library.
4. Different standard EI ion sources provide different 70 eV EI mass spectra. Among the Agilent technologies ion sources, the “Extractor” exhibits relatively abundant molecular ions compared with the “Inert” ion source, while the “High efficiency source” (HES) provides mass spectra with depleted molecular ions compared with the “Inert” ion source or NIST library mass spectra.

These conclusions are demonstrated and supported by experimental data in nine figures and two tables.     

SIMS depth profiling of ‘frozen’ samples: in search of ultimate depth resolution regime

We have performed secondary ion mass spectrometry depth profiling analysis of III–V based hetero‐structures at different target temperatures and found that both the surface segregation and surface roughness caused by ion sputtering can be radically reduced if the sample temperature is lowered to ?150 °C. The depth profiling of ‘frozen’ samples can be a good alternative to sample rotation and oxygen flooding used for ultra‐low‐energy depth profiling of compound semiconductors. Copyright © 2016 John Wiley & Sons, Ltd.     

Time‐of‐flight mass spectrometry depth profiling of sodium‐implanted polyethylene terephthalate

Depth profiling analysis of sodium (Na)‐implanted polyethylene terephthalate was performed by using time‐of‐flight secondary ion mass spectrometry in the cesium‐attachment regime. A radical redistribution of the main element due to diffusion and escape of some elements, such as oxygen and hydrogen, and carbonization of a top 550 nm layer were observed. The depth distribution of the implanted sodium was found to be radically different from the “theoretical” distribution calculated by using the Monte Carlo simulation method (TRIM code). We conclude that it is possible to perform an effective depth profiling analysis of an implanted polymer in the “standard” secondary ion mass spectrometry regime without using a big cluster primary ion beam.     

TOF‐SIMS matrix effects in mixed organic layers in Ar cluster ion depth profiles

Matrix effects are crucial for analyses using time‐of‐flight secondary ion mass spectrometry (ToF‐SIMS) in terms of quantitative analysis, depth profiling and imaging. It is often difficult to predict how co‐existing materials will influence each other before such analysis. However, matrix effects need to be curtailed in order to assume the appropriate amount of a target material in a sample. First, matrix effects on different types of organic mixed samples, including a sample composed of Irganox 1010 and Irganox 1098 (MMK sample) and another composed of Irganox 1010 and Fmoc‐pentafluoro‐L‐phenylalanine (MMF sample), were observed utilizing ToF‐SIMS and the dependence of the secondary ion polarity of the matrix effects on the same sample was evaluated. Next, the correction method for the ToF‐SIMS matrix effects proposed by Shard et al. was applied to a comparison of the positive secondary ion results to the negative ones. The matrix effects on the positive ion data in both samples were different from those on the negative ion data. The matrix effect correction method worked effectively on both the negative and positive depth profiles. Copyright © 2017 John Wiley & Sons, Ltd.     

ToF‐SIMS depth profiling of a complex polymeric coating employing a C60 sputter source

A complex poly(vinylidene difluoride) (PVdF)/poly(methyl methacrylate) (PMMA)‐based coil coating formulation has been investigated using time‐of‐flight SIMS (ToF‐SIMS). Employing a Bi₃⁺ analysis source and a Buckminsterfullerene (C₆₀) sputter source, depth profiles were obtained through the polymeric materials in the outer few nanometres of the PVdF topcoat. These investigations demonstrate that the PVdF coating's air/coating interface is composed principally of the flow agent included in the formulation. Elemental depth profiles obtained in the negative ion mode demonstrate variations in the carbon, oxygen and fluorine concentrations within the coating with respect to depth. All three elemental depth profiles suggest that the PVdF coating bulk possesses a constant material composition. The oxygen depth profile reveals the presence of a very thin oxygen‐rich sub‐surface layer in the PVdF coating, observed within the first second of the sputter/etch profile. Retrospectively, extracted mass spectra (from the elemental depth profile raw data set) of the PVdF coating sub‐surface and bulk layers indicates this oxygen‐rich sub‐surface layer results from segregation of the acrylic co‐polymers in the formulation towards the PVdF coating air/coating interface. Molecular depth profiles obtained in both the positive and negative secondary ion modes provide supporting evidence to that of the elemental depth profiles. The molecular depth profiles confirm the presence of a sub‐surface layer rich in the acrylic co‐polymers indicating segregation of the co‐polymers towards the PVdF topcoats air‐coating surface. The molecular depth profiles also confirm that the PVdF component of the topcoat is distributed throughout the coating but is present at a lower concentration at the air‐coating interface and in the sub‐surface regions of the coating, than in the coating bulk. Copyright © 2007 John Wiley & Sons, Ltd.     

Three-dimensional depth profiling of molecular structures

Molecular time of flight secondary ion mass spectrometry (ToF-SIMS) imaging and cluster ion beam erosion are combined to perform a three-dimensional chemical analysis of molecular films. The resulting dataset allows a number of artifacts inherent in sputter depth profiling to be assessed. These artifacts arise from lateral inhomogeneities of either the erosion rate or the sample itself. Using a test structure based on a trehalose film deposited on Si, we demonstrate that the “local” depth resolution may approach values which are close to the physical limit introduced by the information depth of the (static) ToF-SIMS method itself.     

A new approach to express ToF SIMS depth profiling

We propose a new approach to express SIMS depth profiling on a TOF.SIMS‐5 time‐of‐flight mass spectrometer. The approach is based on the instrument capability to independently perform raster scans of sputter and probe ion beams. The probed area can be much smaller than the diameter of a sputter ion beam, like in the AES depth profiling method. This circumstance alleviates limitations on the sputter beam–raster size relation, which are critical in other types of SIMS, and enables analysis on a curved‐bottomed sputter crater. By considerably reducing the raster size, it is possible to increase the depth profiling speed by an order of magnitude without radically degrading the depth resolution. A technique is proposed for successive improvement of depth resolution through profile recovery with account for the developing curvature of the sputtered crater bottom in the probed area. Experimental study of the crater bottom form resulted in implementing a method to include contribution of the instrumental artifacts in a nonstationary depth resolution function within the Hofmann's mixing–roughness–information depth model. The real‐structure experiment has shown that the analysis technique combining reduction of a raster size with a successive nonstationary recovery ensures high speed of profiling at ~100 µm/h while maintaining the depth resolution of about 30 nm at a 5 µm depth. Copyright © 2015 John Wiley & Sons, Ltd.     

Mass defect filter technique and its applications to drug metabolite identification by high‐resolution mass spectrometry

Identification of drug metabolites by liquid chromatography/mass spectrometry (LC/MS) involves metabolite detection in biological matrixes and structural characterization based on product ion spectra. Traditionally, metabolite detection is accomplished primarily on the basis of predicted molecular masses or fragmentation patterns of metabolites using triple‐quadrupole and ion trap mass spectrometers. Recently, a novel mass defect filter (MDF) technique has been developed, which enables high‐resolution mass spectrometers to be utilized for detecting both predicted and unexpected drug metabolites based on narrow, well‐defined mass defect ranges for these metabolites. This is a new approach that is completely different from, but complementary to, traditional molecular mass‐ or MS/MS fragmentation‐based LC/MS approaches. This article reviews the mass defect patterns of various classes of drug metabolites and the basic principles of the MDF approach. Examples are given on the applications of the MDF technique to the detection of stable and chemically reactive metabolites in vitro and in vivo. Advantages, limitations, and future applications are also discussed on MDF and its combinations with other data mining techniques for the detection and identification of drug metabolites. Copyright © 2009 John Wiley & Sons, Ltd.     

The analysis of industrial synthetic polymers by electrospray droplet impact/secondary ion mass spectrometry

Electrospray droplet impact (EDI)/secondary ion mass spectrometry (SIMS) is a new desorption/ionization technique for mass spectrometry in which highly charged water clusters produced from the atmospheric‐pressure electrospray are accelerated in vacuum by several kV and impact the sample deposited on the metal substrate. In this study, several industrial synthetic polymers, e.g. polystyrene (PS) and polyethylene glycol (PEG) were analyzed by EDI/SIMS mass spectrometry. For higher molecular weight analytes, e.g. PS4000 and PEG4600, EDI/SIMS mass spectra could be obtained when cationization salts are added. For the polymers of lower molecular weights, e.g. PEG300 and PEG600, they could be readily detected as protonated ions without the addition of cationization agents. Anionized PS was also observed in the negative ion mode of operation when acetic acid was added to the charged droplet. Compared to matrix‐assisted laser desorption/ionization (MALDI), ion signal distribution with lower background signals could be obtained particularly for the low‐molecular weight polymers. Copyright © 2009 John Wiley & Sons, Ltd.     

Substituent Effect on the Tautomerization of 1‐Arylazonaphthalen‐2‐ols by Mass Spectrometric Analysis

An electron‐ionization (EI) mass spectra of a series of 1‐arylazonaphthalen‐2‐ols was obtained for studying the substituent effect on the fragmentation. The correlation between the ratio, molecular ion and fragment ion, and Hammett’s constants is applied to examine the effect of the substituent on the fragmentation. The negative correction between the ratio, I_{molecular ion}/(I_171amu + I_143amu + I_115amu), and Hammett’s constants indicates an electron‐withdrawing group destabilized the molecular ion. An unusual long‐range hydrogen transfer demonstrates an important role in the fragmentation process     

Depth profiling of Irganox‐3114 nanoscale delta layers in a matrix of Irganox‐1010 using conventional Cs+ and O2+ ion beams

Depth profiling of an organic reference sample consisting of Irganox 3114 layers of 3 nm thickness at depths of 51.5, 104.5, 207.6 and 310.7 nm inside a 412 nm thick Irganox 1010 matrix evaporated on a Si substrate has been studied using the conventional Cs⁺ and O₂⁺ as sputter ion beams and Bi⁺ as the primary ion for analysis in a dual beam time‐of‐flight secondary ion mass spectrometer. The work is an extension of the Versailles Project on Advanced Materials and Standards project on depth profiling of organic multilayer materials. Cs⁺ ions were used at energies of 500 eV, 1.0 keV and 2.0 keV and the O₂⁺ ions were used at energies of 500 eV and 1.0 keV. All four Irganox 3114 layers were identified clearly in the depth profile using low mass secondary ions. The depth profile data were fitted to the empirical expression of Dowsett function and these fits are reported along with the full width at half maxima to represent the useful resolution for all the four delta layers detected. The data show that, of the conditions used in these experiments, an energy of 500 eV for both Cs⁺ beam and O₂⁺ beam provides the most useful depth profiles. The sputter yield volume per ion calculated from the slope of depth versus ion dose matches well with earlier reported data. Copyright © 2013 John Wiley & Sons, Ltd.