Adsorption of trisilylamine on the Si(100) surface

Adsorption of trisilylamine (TSA) on the Si(100) surface has been studied using temperature programmed desorption (TPD) and time‐of‐flight electron stimulated desorption (TOFESD). TPD spectra exhibit the presence of three desorption states denoted by β₁, β₂, and β₃ associated with the presence of a mono‐, di‐, and tri‐hydride state respectively. This behavior is identical with previously observed desorption studies resulting from atomic hydrogen adsorption, indicating that the nitrogen species in the adsorbate has minimal impact on the surface structure of the hydride. Preliminary electron irradiation studies are reported and indicate that the formation of a thin silicon nitride layer is induced as a result of the irradiation. Copyright © 2008 John Wiley & Sons, Ltd.     

Si 2p XPS spectrum of the hydrogen‐terminated (100) surface of device‐quality silicon

An experimental study of the Si 2p XPS spectrum at different take‐off angles of atomically flat, hydrogen‐terminated 1 × 1 Si(100) is reported. The observed spectrum can be described accurately by considering three additional contributions to the spectrum of elemental silicon. Each contribution is attributed to a chemical state of silicon on the basis of its chemical shift with respect to elemental silicon and the depth of the region where it was originated. Copyright © 2003 John Wiley & Sons, Ltd.     

Ultrathin films of Ge on the Si(100)2 × 1 surface

The Ge/Si(100)2 × 1 interface was investigated by means of Auger electron spectroscopy, low‐energy electron diffraction, thermal desorption spectroscopy, and work function measurements, in the regime of a few monolayers. The results show that growth of Ge at room temperature forms a thermally stable amorphous interface without significant intermixing and interdiffusion into the substrate, for annealing up to ~1100 K. Therefore, the Ge‐Si interaction most likely takes place at the outmost silicon atomic plane. The charge transfer between Ge and Si seems to be negligible, indicating a rather covalent bonding. Regarding the Ge overlayer morphology, the growth mode depends on the substrate temperature during deposition, in accordance with the literature. Stronger annealing of the germanium covered substrate (>1100 K) causes desorption of not only Ge adatoms, but also SiGe and Ge₂ species. This is probably due to a thermal Ge‐Si interdiffusion. In that case, deeper silicon planes participate in the Ge‐Si interaction. Above 1200 K, a new Ge superstructure (4 × 4)R45^o was observed. Based on that symmetry, an atomic model is proposed, where Ge adatom pairs interact with free silicon dangling bonds.     

Density functional study of XH4 (XSi and Ge) reactivity upon dissociative adsorption onto the Si(100) surface

Total energy calculations based on density functional theory (DFT) with generalized gradient approximation (GGA) and ultrasoft pseudopotential approximation and an analysis tool of atom‐resolved density of states (ADOS) have been used to investigate (1) the energetic profiles for the possible initial dissociative adsorption of XH₄ (X?Si and Ge) onto the Si(100)? (2 × 2) surface to evaluate their reactivity and (2) the effect of surface electronic states of Si(100)? (2 × 2) on gaseous molecular precursors XH₄ (X?Si and Ge) during initial dissociative adsorption to understand the factors governing their reactivity. Our calculated lower‐energy barrier for initial dissociative adsorption of GeH₄ is due to the forming of stronger bond of Si? H between H within GeH₄ and buckled‐down Si atom on the Si(100)? (2 × 2) surface accompanying the larger extent of unbuckling of the buckled Si?Si dimer on the Si(100)? (2 × 2) surface at the transition state. Our evaluated better reactivity for GeH₄ than SiH₄ (a factor of around 14.6) is slightly larger than observed higher reactivity for GeH₄ than SiH₄ (a factor of between 2 and 5 depending on the incident kinetic energy) employed supersonic molecular bean techniques. Finally, our calculated ADOS indicate that the surface electronic states of buckled Si?Si dimer on the Si(100)? (2 × 2) surface energetically favorably participate in the transition state during GeH₄ initial dissociative adsorption to reduce the energy barrier, i.e., enhance its reactivity, in comparison with SiH₄ initial dissociative adsorption onto the Si(100)? (2 × 2) surface under the same reaction conditions. © 2003 Wiley Periodicals, Inc. Int J Quantum Chem, 2004     

Grafting cavitands on the Si(100) surface

Cavitand molecules having double bond terminated alkyl chains and different bridging groups at the upper rim have been grafted on H-terminated Si(100) surface via photochemical hydrosilylation of the double bonds. Pure and mixed monolayers have been obtained from mesitylene solutions of either pure cavitand or cavitand/1-octene mixtures. Angle resolved high-resolution X-ray photoelectron spectroscopy has been used as the main tool for the monolayer characterization. The cavitand decorated surface consists of Si-C bonded layers with the upper rim at the top of the layer. Grafting of pure cavitands leads to not-well-packed layers, which are not able to efficiently passivate the Si(100) surface. By contrast, monolayers obtained from cavitand/1-octene mixtures consist of well-packed layers since they prevent silicon oxidation after aging. AFM measurements showed that these monolayers have a structured topography, with objects protruding from the Si(100) surface with average heights compatible with the expected ones for cavitand molecules.     

Electroless plating of copper on Si(100) surfaces modified by surface‐initiated atom‐transfer radical polymerization of 4‐vinylpyridine

Surface‐initiated atom‐transfer radical polymerization (ATRP) of 4‐vinylpyridine (4VP) on a pretreated Si(100) surface was carried out. The composition and topography of the Si(100) surface modified by poly(4‐vinylpyridine) (P4VP) were characterized by XPS and atomic force microscopy (AFM), respectively. The P4VP layer on the Si(100) surface was used not only as chemisorption sites for the palladium complexes without prior sensitization by SnCl₂ solution during the electroless plating, but also as an adhesion promotion layer for the electrolessly deposited copper. The electrolessly deposited copper on the Si–P4VP surface exhibited a 180° peel adhesion strength above 6 N/cm. The adhesion strength was much higher than that of the electrolessly deposited copper to the pristine silicon surface. Copyright © 2008 John Wiley & Sons, Ltd.     

Direct Electrochemistry of Cytochrome c at Modified Si(100) Electrodes

This paper demonstrates the direct electron transfer between the heme moiety of horse hearth cytochrome c and a pyridinyl group on self‐assembled‐monolayer‐modified Si(100) electrodes. Self‐assembled monolayers (SAMs) containing the putative receptor ligand were prepared by a step‐wise procedure using “click” reactions of acetylene‐terminated alkyl monolayers and isonicotinic acid azide derivatives. Unoxidized Si(100) electrodes, possessing either isonicotinate or isonicotinamide receptor ligands, were characterized using X‐ray photoelectron spectroscopy, contact‐angle goniometry, cyclic voltammetry, and electrochemical impedance spectroscopy. The ability of isonicotinic acid terminated layers to coordinatively bind the redox center of cytochrome c was found to be restricted to pyridinyl assemblies with a para‐ester linkage present. The protocol detailed here offers an experimentally simple modular approach to producing chemically well‐defined SAMs on silicon surfaces for direct electrochemistry of a well‐studied model redox protein.     

Grafting of commercially available amines bearing aromatic rings onto poly(vinylidene‐co‐hexafluoropropene) copolymers

The grafting of poly(VDF‐co‐HFP) copolymers with different amines containing aromatic rings, such as aniline, benzylamine, and phenylpropylamine, is presented. ¹⁹F NMR characterization enabled us to show that the sites of grafting of aromatic‐containing amines were first difluoromethylene of vinylidene fluoride (VDF) in the hexafluoropropene (HFP)/VDF/HFP triad and then that of VDF adjacent to HFP. The kinetics of grafting of benzylamine, monitored by ¹H NMR spectroscopy, confirmed those sites of grafting and showed that all VDF units located between two HFPs were grafted in the first 150 min, whereas those adjacent to one HFP unit were grafted in the remaining 3000 min. Parameters such as the temperature or the molar percentage of HFP in the copolymer had an influence on the maximum rate of grafted benzylamine. The higher the temperature, the higher the molar percentage of grafted benzylamine. Furthermore, the higher the molar percentage of HFP in the copolymer, the higher the molar percentage of VDF in the HFP/VDF/HFP triad, and the higher the molar percentage of grafted benzylamine. The spacer length between the aromatic ring and the amino group had an influence on the kinetics of grafting: aniline (pK_a = 4.5) could not add onto the polymeric backbone, whereas phenylpropylamine was grafted in the first 150 min, and benzylamine required 3000 min to reach the maximum amount of grafting. © 2006 Wiley Periodicals, Inc. J Polym Sci Part A: Polym Chem 44: 1855–1868, 2006     

Grazing incidence X-ray absorption spectra of (Si/W) 100/Si multilayer

Tungsten (W) M_III X-ray absorption spectra of a periodic multilayer, (Si/W)₁₀₀/Si, were measured with the change of X-ray grazing angle using sample current method. Under not total reflection condition, the absorbance changed little except at W M_III absorption edge. While under the total reflection condition, the absorbance increased with the increase of the X-ray energy and the increment changed from low to high at the W M_III absorption edge. This result reflected the variation of the X-ray evanescent wavelength caused by the absorption effect of W.     

Geometric and Electronic Structures of Pyrazine Molecule Chemisorbed on Si(100) Surface by XPS and NEXAFS Spectroscopy

The geometric and electronic structures of several possible adsorption configurations of the pyrazine ({C\begin{document}$ _{4} $\end{document}}{H\begin{document}$ _{4} $\end{document}}{N\begin{document}$ _{2} $\end{document}}) molecule covalently attached to Si(100) surface, which is of vital importance in fabricating functional nano-devices, have been investigated using X-ray spectroscopies. The Carbon K-shell (1s) X-ray photoelectron spectroscopy (XPS) and near-edge X-ray absorption fine structure (NEXAFS) spectroscopy of predicted adsorbed structures have been simulated by density functional theory with cluster model calculations. Both XPS and NEXAFS spectra demonstrate the structural dependence on different adsorption configurations. In contrast to the XPS spectra, it is found that the NEXAFS spectra exhibiting conspicuous dependence on the structures of all the studied pyrazine/Si(100) systems can be well utilized for structural identification. In addition, according to the classification of carbon atoms, the spectral components of carbon atoms in different chemical environments have been investigated in the NEXAFS spectra as well.     

C59Si on the monohydride Si(100):H-(2 x 1) surface

We propose the use of the Si atom in the experimentally observed C59Si molecule as a possible way to controllably anchor fullerene molecules on a Si surface, due to the formation of a strong bond to one of the Si surface atoms. All our results are based on ab initio total energy density functional theory, and we obtain that the binding energy is on the order of 2.1 eV, approximately 1.4 eV more stable than a C60 bonded in a similar situation. A possible route to obtain such adsorption via a (C59Si)2 dimer is examined, and we find the whole process to be exothermic by approximately 0.2 eV.     

Infrared Spectroscopic Analysis of Plasma-Treated Si(100)-Surfaces

 Infrared reflection spectroscopy (specular reflection, attenuated total reflection) has been applied in combination with spectroscopic ellipsometry and electron microscopy to analyze the surface structure of plasma-treated Si(100) surfaces. It is shown that plasma treatments in oxygen and fluorine or chlorine-containing gases cause the formation of a thin surface layer having thicknesses of a few nanometers. The layer was identified to consist of SiO₂ for treatments in an oxygen plasma. Analyses of layers formed by treatments in a fluorine-containing plasma do not confirm the generally assumed model. Different Si-F vibration modes were identified in the surface layer caused by a SF₆ plasma. They correlate, however, with SiF and SiF₂ molecules. There are no indications of the existence of the generally assumed SiF₄. Neither has SiOF₂ been proven in layers produced by etching in a SF₆/O₂ plasma.     

X‐ray photoreduction of U(VI)‐bearing compounds

During XPS analysis, the soft X‐ray‐induced reduction of metals such as Cr(VI) and Ce(IV) in oxides has been reported in the literature and some mechanisms have been proposed to explain this phenomenon. The reduction of U(VI) by the beam during X‐ray Photoelectron Spectroscopy has been already reported in the literature but only for U(VI) sorbed or precipitated onto solids with reducing properties (as micas or pyrites) for whose Fe(II) can also induce the reduction of U(VI), or onto TiO₂ whose the photocatalytic properties are well known. The objective of this paper is to investigate the effects of X‐ray beam on U(VI) bulk compounds (UO₃, UO₂(OH)₂, (UO₂)₂SiO₄, UO₂(CH₃COO)₂ and UO₂C₂O₄). Successive U4f, U5f, C1s XPS spectra were recorded and compared as a function of the irradiation time. The XPS photoreduction of U(VI) into U(IV) is only observed for uranyl compounds containing organic matter (uranyl acetate and uranyl oxalate). Considering the evolution of the C1s signal during the X‐ray irradiation, a significant decrease of the C ? O component simultaneously to the U(VI) reduction is observed, which suggests a desorption of CO or other volatile organic products from the solid surface. All these results on U(VI) bulk compounds indicate the important role of organic carbon species in the photoreduction process and to explain these observations, a photoreduction mechanism has been suggested. Copyright © 2010 John Wiley & Sons, Ltd.     

Thermal behavior of perfluoroalkylsiloxane monolayers on the oxidized Si(100) surface

The thermal stability of perfluoralkylsiloxane monolayers in a vacuum is investigated via X-ray photoelectron spectroscopy (XPS) for temperatures up to 600 degrees C. 1H,1H,2H,2H,-perfluorodecyltrichlorosilane (FDTS) monolayers are deposited on oxidized Si(100) surfaces from the vapor phase with various degrees of surface coverage. Significant monolayer desorption is observed to occur at temperatures below 300 degrees C regardless of the initial monolayer coverage. The desorption mechanism follows first-order kinetics and is independent of the initial coverage. Removal of FDTS is found to occur by the loss of the entire molecular chain, as evidenced by the fact that the CF(3)/CF(2) peak area ratios remain unaffected by the annealing process although CF(n)()/Si peak ratio declines with annealing. This is in sharp contrast to the behavior observed for octadecyltrichlorosilane monolayer for which elevated temperature leads to C-C bond breakage and successive shortening of the alkyl chain. It is also shown that the binding energy and the shape of the F 1s line are good indicators of the degree of disorder in the chain, as well as a measure of the interaction of the chain with the silicon surface.     

Density-functional study of the cycloaddition of acrylonitrile on the Si(100) surface

Using a density functional approach, we have explored the cycloaddition of acrylonitrile on the Si(100) surface. The buckling of the surface dimers characteristic for the (2x1) reconstructed surface is shown to favor structures with a dipolar moment such as the resonant form of acrylonitrile with cumulative double bonds. The bond of acrylonitrile via a single C atom is a possible intermediate leading to the nitrile structure of the adsorbed molecule.     

Cycloaddition of benzene on Si(100) and its surface conversions

A comprehensive ab initio study of the adsorption of benzene on the silicon(100) surface is presented. Five potential candidates ([2+2] adduct, [4+2] adduct, two tetra-sigma-bonded structures, and one radical-like structure) for the reaction product are examined to determine the lowest energy adsorption configuration. A [4+2] butterfly structure is determined to be the global minimum (-29.0 kcal/mol), although one of the two tetra-sigma-bonded structures (-26.7 kcal/mol) is similar in energy to it. Multireference perturbation theory suggests that the [4+2] addition mechanism of benzene on Si(100) is very similar to the usual Diels-Alder reaction (i.e., small or zero activation barrier), even though benzene adsorption entails the loss of benzene aromaticity during the reaction. On the other hand, the [2+2] cycloaddition mechanism is shown to require a relatively high activation barrier (17.8 kcal/mol), in which the initial step is to form a (relatively strongly bound) van der Waals complex (-8.9 kcal/mol). However, the net activation barrier relative to reactants is only 8.9 kcal/mol. Careful examination of the interconversion reactions among the reaction products indicates that the two tetra-sigma-bonded structures (that are energetically comparable to the [4+2] product) can be derived from the [2+2] adduct with activation barriers of 15.5 and 21.4 kcal/mol. However, unlike the previous theoretical predictions, it is found that the conversion of the [4+2] product to the tetra-sigma-bonded structures entails huge barriers (>37.0 kcal/mol) and is unlikely to occur. This suggests that the [4+2] product is not only thermodynamically the most stable configuration (lowest energy product) but also kinetically very stable (large barriers with respect to the isomerization to other products).     

Reactivity of the Bicyclic Amido-Substituted Silicon(I) Ring Compound Si4{N(SiMe3)Mes}4 with FLP-Type Character

The bicyclic amido-substituted silicon(I) ring compound Si₄{N(SiMe₃)Mes}₄ 2 (Mes=Mesityl=2,4,6-Me₃C₆H₂) features enhanced zwitterionic character and different reactivity from the analogous compound Si₄{N(SiMe₃)Dipp}₄ 1 (Dipp=2,6-ⁱPr₂C₆H₃) due to the smaller mesityl substituents. In a reaction with the N-heterocyclic carbene NHC (1,3,4,5-tetramethyl-imidazol-2-ylidene), we observe adduct formation to give Si₄{N(SiMe₃)Mes}₄ ⋅ NHC ( 3 ). This adduct reacts further with the Lewis acid BH₃ to yield the Lewis acid–base complex Si₄{N(SiMe₃)Mes}₄ ⋅ NHC ⋅ BH₃ ( 4 ). Coordination of AlBr₃ to 2 leads to the adduct 5 . Calculated proton affinities and fluoride ion affinities reveal highly Lewis basic and very weak Lewis acidic character of the low-valent silicon atoms in 1 and 2 . This is confirmed by protonation of 1 and 2 with Brookharts acid yielding 6 and 7 . Reaction with diphenylacetylene only occurs at 111 °C with 2 in toluene and is accompanied by fragmentation of 2 to afford the silacyclopropene 8 and the trisilanorbornadiene species 9 .     

Ab initio study of epitaxial growth on stepped Si(100) surface

Diffusion of a Si adatom over the reconstructed Si(100) surface with a single-height step on it is studied using the pseudopotential total energy method. The S_B rebonded step is shown to act as a good sink for adatoms descending onto the lower ledge. This is due to the presence of deep traps on the lower terrace and to the negative Ehrlich-Schwoebel barrier (the activation barrier for descent from the edge is 0.23 eV lower than for the motion on a flat surface). The diffusion characteristics of the adatom on both terraces are virtually unaffected by the presence of the step. However, the dimer buckling sequence on a lower terrace is strongly dependent on the position of the adatom along the diffusion path. © 1997 John Wiley & Sons, Inc.