Effect of conduction band parabolicity on the spectrum and binding energy of a hydrogenic impurity in GaAs spherical quantum dots

The energy levels and binding energies of a hydrogenic impurity in GaAs spherical quantum dots with radius R are calculated by the finite difference method. The system is assumed to have an infinite confining potential well with radius R, which can be viewed as a hard wall boundary condition. The parabolicity of the conduction band profile for GaAs material can be viewed as a parabolic potential well. The energy levels and binding energies are depended dramatically on the radius of the quantum dot and the parabolic potential well. The results show that parabolic potential can remarkably alter the energy level ordering and binding energy level ordering of hydrogenic impurity states for the quantum dot with a smaller radius R.     

Two-electron states and state exchange time control in parabolic quantum dot

Using the Heisenberg uncertainty relationship and the stationary perturbation theory we consider two-electron states in a spherically symmetric parabolic quantum dot (parabolic helium atom). The dependence of ground-state energy on the QD size is studied. The energy of two-electron system monotonically decreases with QD radius increase. The problem of the state exchange time control in QD is discussed, taking into account the spins of the electrons in the Russell–Saunders approximation. With the increase of the QD radius the state exchange time increases.     

抛物量子点中弱耦合束缚极化子的相互作用能

研究了抛物量子点中弱耦合束缚极化子的性质,采用改进的线性组合算符和幺正变换方法导出了束缚极化子的振动频率、有效质量和相互作用能。讨论了量子点的有效受限长度、电子LO声子耦合强度和库仑场对抛物量子点中弱耦合极化子的振动频率、有效质量和相互作用能的影响。数值计算结果表明:弱耦合束缚极化子的振动频率和相互作用能随有效受限长度的减少而急剧增大,振动频率随库仑势以及电子LO声子耦合强度的增加而增加,而相互作用能随库仑势以及电子LO声子耦合强度的增加而减小。有效质量仅与电子LO声子耦合强度有关。     

抛物量子点中强耦合束缚磁极化子的性质

采用Pekar类型的变分方法研究了抛物量子点中强耦合束缚磁极化子的基态和激发态的性质.计算了束缚磁极化子的基态和激发态的能量、光学声子平均数以及束缚磁极化子的共振频率.讨论了这些量对回旋频率和有效束缚强度以及库仑束缚势的依赖关系.数值计算结果表明:量子点中强耦合束缚磁极化子的基态能量和共振频率以及光学声子平均数均随量子点的有效束缚强度的增加而减小,基态能量随库仑束缚势的增加而减小,随回旋频率的增加而增大.     

抛物量子点中强耦合束缚磁极化子的声子平均数

采用线性组合算符和幺正变换方法导出了强耦合束缚磁极化子的振动频率和声子平均数。讨论了量子点的有效受限长度、磁场、库仑场和电子-LO声子耦合强度对抛物量子点中强耦合束缚磁极化子振动频率和声子平均数的影响。数值计算结果表明:强耦合束缚磁极化子的振动频率和声子平均数均随量子点的有效受限长度、回旋共振频率的增加而减小,随库仑束缚势的增加而增加,声子平均数随电子-LO声子耦合强度增加而减小。     

Binding energy and diamagnetic susceptibility of an on-center hydrogenic donor impurity in a spherical quantum dot placed at the center of a cylindrical nano-wire

The binding energy and diamagnetic susceptibility of an on-center hydrogenic donor impurity in an InAs spherical quantum dot placed at the center of a GaAs cylindrical nano-wire have been investigated using finite element method in the framework of the effective mass approximation. The binding energy and diamagnetic susceptibility are calculated as a function of the dot radius, nano-wire radius and nano-wire height. The results show that as the dot radius increases (I) for a dot radius smaller than some critical value, the effect of the spherical confinement on the energy levels becomes negligible and the energies remain constant, for a dot radius larger than some specific value, the energy levels decrease (II) the ground and the first excited state binding energies increase, reach a maximum and then decrease (III) the ground state diamagnetic susceptibility increases, reach a maximum and then decreases (IV) the first excited state diamagnetic susceptibility increases, indicating two maxima and then decreases. The effects of the nano-wire dimensions on the binding energy and diamagnetic susceptibility have also been studied. We found that the binding energy and diamagnetic susceptibility decrease reach a minimum value and then increase as the nano-wire radius increases. Finally we found that as the height of the nano-wire increases the ground state binding energy decreases, reaches a minimum value and then increases but the first excited state binding energy decreases and reaches a constant value.     

Influence of the image charge effect on the hydrogen-like impurity-bound polaron in a spherical quantum dot in the presence of an electric field

We have investigated the influence of an external electric field on the binding energies and polaronic shifts of the ground and some first few excited states of a hydrogenic impurity in a spherical quantum dot by taking into account the image charge effect. By using Landau–Pekar variational method the general analytical expression is obtained for the impurity bound-polaron energies. It has been numerically identified the conditions (electric field, nominal radius of quantum dot, etc.) in which the bound-polaron states can be existence in GaAs quantum dot. We have shown that the polaronic shifts in the binding energy of 1s-like state are the same in cases with and without image charge effect while they for 2s-like state are not coincide and have different monotonic behavior versus confinement potential. Electron–phonon interaction lifts the degeneracy of the 2px-, 2py-, and 2pz-like states of a donor impurity and reduces their binding energies.     

Bipolaron in a quasi-0D quantum dot

Bipolaron states in a quasi-0D quantum dot with a spherical parabolic confinement potential are investigated by applying the Feynman variational principle. The bipolaron coupling energy and self-action potential energy are found to increase with an increase in the Fröhlich electron–phonon-coupling constant. There is also a non-monotonic dependence of the bipolaron coupling energy on the quantum dot radius. With decreasing structure radius the bipolaron coupling energy increases. However, from a critical radius it starts decreasing as the radius decreases, due to the dominance of the coulomb-to-phonon mediated interaction. When electrons in the bipolaron are forcefully neighboured, the polarization of the structure is intensified and consequently there is Coulomb repulsion. The possibility of bipolaron formation depends on the strength of the direct Coulomb repulsion which, in turn, depends on the quantum dot radius. The main contribution to the bipolaron coupling energy comes from the self-action potential. This self-action potential energy influences the energy state of the bipolaron considerably. The ratio of optical-to-static dielectric constants significantly affects the bipolaron coupling energy.     

A Negative Donor Center Trapped by a Spherical Quantum Dot

The properties of the low-lying states of a negative donor center trapped by a spherical quantum dot, which is subjected to a parabolic potential confinement, are investigated in the absence of magnetic field. The calculations have been performed by means of the exact diagonalization of the Hamiltonian matrix within the effective-mass approximation. We find that there is only one bound state the D^- center in a spherical parabolic quantum dot in the absence of magnetic field. The binding energy of the ground state is obtained as a function of the dot size. Moreover, the critical confined potential radius value at which the negative donor center changes from unbound to bound is obtained.     

Linear and nonlinear optical absorption coefficients and binding energy of a spherical quantum dot

The binding energy and wavefunctions of the 1s, 1p, 1d and 1f energy states of a spherical quantum dot (QD) with parabolic potential were calculated by using a method which is a combination of the quantum genetic algorithm (QGA) and the Hartree–Fock–Roothaan (HFR) approach. In addition, the linear and the third-order nonlinear optical absorption coefficients based on optical transitions in QDs with and without impurity were calculated. The results show that the parabolic potential has a great effect not only on the binding energies and but also on the optical absorption coefficients. Moreover, the calculated results also reveal that the linear and nonlinear optical absorption coefficients are strongly affected by the existence of impurity and the incident optical intensity.     

纤锌矿GaN柱形量子点中类氢施主杂质态

在有效质量近似和变分原理的基础上,选取含两个变分参数的波函数,研究了纤锌矿结构的GaN/AlxGa1-xN单量子点中类氢施主杂质体系的结合能随量子点(QD)尺寸以及杂质在量子点中位置的变化,并与以前使用不同尝试波函数的计算结果进行了比较。结果表明:由我们选取的两变分参数波函数得到的结果与前人选取的两变分参数波函数得到的结果相比有所改进,而与选取一个变分参数波函数得到的结果一致。同时我们还计算了体系的维里定理值随量子点半径的变化情况,所得结果与前人工作结果一致,说明本文选取的两变分参数波函数能很好地描述柱形量子点中施主杂质态的运动。     

磁场和库仑场对抛物量子点中弱耦合极化子激发态性质的影响

采用线性组合算符和幺正变换方法研究了磁场和库仑场对抛物量子点中极化子激发态性质的影响。导出了抛物量子点中弱耦合束缚磁极化子的振动频率、第一内部激发态能量、激发能量与量子点的有效受限长度、库仑束缚势和磁场的回旋频率之间的变化关系。通过数值计算,结果表明:抛物量子点中弱耦合束缚极化子的振动频率、第一内部激发态能量、激发能量均随量子点的有效受限长度减小而迅速增大。随库仑束缚势增大而增大。随磁场的回旋频率的增加而增大。     

Calculation of linear and nonlinear optical absorption coefficients of a spherical quantum dot with parabolic potential

In the effective mass approximation, we calculated the binding energy and wave function for the 1s-, 1p-, 1d- and 1f-states of a spherical quantum dot (QD) with parabolic potential by using a combination of quantum genetic algorithm (QGA) and Hartree-Fock-Roothaan (HFR) method. In addition, we also investigated the linear and the third-order nonlinear optical absorption coefficients as a function of the incident photon energy for the 1s-1p, 1p-1d and 1d-1f transitions. Our results are shown that the existence of impurity has great influence on optical absorption coefficients. Moreover, the optical absorption coefficients are strongly affected by the incident optical intensity, relaxation time, parabolic potential and dot radius.     

Refractive index changes and absorption coefficients in a spherical quantum dot with parabolic potential

In this study, we have calculated the linear, nonlinear and total refractive index changes and absorption coefficients for the transitions 1s–1p, 1p–1d and 1d–1f in a spherical quantum dot with parabolic potential. Quantum Genetic Algorithm (QGA) and Hartree–Fock–Roothaan (HFR) method have been employed to calculate the wavefuctions and energy eigenvalues. The results show that impurity, dot radius, stoichiometric ratio, incident optical intensity and carrier density of the system have important effects on the optical refractive index changes and absorption coefficients. Also, we find that as the transitions between orbitals with big l value move to lower energy region in case with parabolic potential, in case without parabolic potential these transitions move to higher energy region.     

抛物量子点中强耦合束缚极化子的性质

采用Pekar类型的变分方法研究了抛物量子点中强耦合束缚极化子的基态和激发态的性质。计算了束缚极化子的基态和激发态的能量、光学声子平均数。讨论了量子点的有效束缚强度和库仑束缚势对基态能量、激发态能量以及光学声子平均数的影响。数值计算结果表明:量子点中强耦合束缚极化子的基态和激发态能量及光学声子平均数均随量子点的有效束缚强度的增加而减小,基态、激发态能量随库仑束缚势的增加而减小,光学声子平均数随库仑束缚势的增加而增大。     

Impurity states in a cylindrical quantum dot with the modified Pöschl-Teller potential

We study impurity states in a cylindrical quantum dot with two confining potentials: in the direction of cylinder axis modified Pöschl-Teller potential and in radial direction parabolic potential. Studies of impurity states are performed in the frames of variational method and by using numerical methods, the dependences of the particle energy on the geometrical parameters of the cylindrical quantum dot are derived. Dependences of the electron binding energy on the half-width and depth of the potential wall are revealed.     

闪锌矿GaN量子点中类氢杂质态的束缚能

在有效质量近似下,用变分法研究了闪锌矿GaN/AlxGa1-xN单量子点中的类氢杂质态。结果表明量子点中的杂质位置和量子点结构参数（量子点高度H、半径R及Al含量x）对施主束缚能有很大的影响。当杂质位于量子点中心时,施主束缚能 有最大值。此外,施主束缚能 随着量子点高度H（半径 ）的增大而减小,随着量子点中Al含量x的增大而增大。     

硅纳米结构晶体管中与杂质量子点相关的量子输运

在小于10 nm的沟道空间中,杂质数目和杂质波动范围变得十分有限,这对器件性能有很大的影响.局域纳米空间中的电离杂质还能够展现出量子点特性,为电荷输运提供两个分立的杂质能级.利用杂质原子作为量子输运构件的硅纳米结构晶体管有望成为未来量子计算电路的基本组成器件.本文结合安德森定域化理论和Hubbard带模型对单个、分立和耦合杂质原子系统中的量子输运特性进行了综述,系统介绍了提升杂质原子晶体管工作温度的方法.     

Electronic Structure of Helium Atom in a Quantum Dot

Bound and resonance states of helium atom have been investigated inside a quantum dot by using explicitly correlated Hylleraas type basis set within the framework of stabilization method.To be specific,precise energy eigenvalues of bound 1sns(~1S~e)(n=1-6)states and the resonance parameters i.e.positions and widths of~lS~e states due to 2sns(n=2-5)and 2pnp(n=2-5)configurations of confined helium below N=2 ionization threshold of He~+have been estimated.The two-parameter(Depth and Width)finite oscillator potential is used to represent the confining potential due to the quantum dot.It has been explicitly demonstrated that the electronic structural properties become sensitive functions of the dot size.It is observed from the calculations of ionization potential that the stability of an impurity ion within a quantum dot may be manipulated by varying the confinement parameters.A possibility of controlling the autoionization lifetime of doubly excited states of two-electron ions by tuning the width of the quantum cavity is also discussed here.     

Electronic States of a Shallow Hydrogenic Donor Impurity in Different Shaped Semiconductor Quantum Wells

The shallow hydrogenic donor impurity states in square, V-shaped, and parabolic quantum wells are studied in the framework of effective-mass envelope-function theory using the plane wave basis. The first four impurity energy levels and binding energy of the ground state are more easily calculated than with the variation method. The calculation results indicate that impurity energy levels decrease withthe increase of the well width and decrease quickly when the well width is small.The binding energy of the ground state increases until it reaches a maximum value,and then decreases as the well width increases. The results are meaningful andcan be widely applied in the design of various optoelectronic devices.