Red organic light-emitting devices with dotted-line doped emitting layers

High efficiency red organic light-emitting devices (OLEDs) with several dotted-line doped layers (DLDLs) were fabricated by using an ultra-high vacuum organic molecular-beam deposition system. The red OLEDs consisted of indium-tin-oxide (ITO)/N, N′-diphenyl-N, N′-bis(1-naphthyl)-(1, 1′-biphenyl)-4, 4′-diamine (α-NPD): 40 nm/tris(8-hydroxyquinoline)aluminum (Alq₃)+4-(dicyanomethylene)-2-t-butyl-6-(1,1,7,7-tetra-methyljuloldyl-9-enyl)-4H-pyran (DCJTB); 3%wt.: x nm/(Alq₃+DCJTB; 3%wt./ Alq₃)_n−1: (30−x) nm/ Alq₃: 30 nm/Mg:Ag with n of 2, 4, 6, or 8, and x=30/(2n−1). The luminance yield of the device with 8 DLDLs was 75% higher than that of the device with a common doped layer. This was attributed to more formation of the excitons formed in a wider region resulting from the existence of the DLDLs. The dominant mechanisms of the dopant emission for the devices with DLDLs were described on the basis of the sequential carrier trapping process.     

Efficient White Light Emission Using a Single Copolymer with Red and Green Chromophores on a Conjugated Polyfluorene Backbone Hybridized with InGaN-Based Light-Emitting Diodes

We report an efficient white-light emission based on a single copolymer/InGaN hybrid light-emitting diode. The single copolymer consists of a conjugated polyfluorene backbone by incorporating 2,1,3-benzothiadiazole （BT） and 4,7-bis（2-thienyl）-2,1,3-benzothiadiazole （DBT） as green and red light-emitting units, respectively. For the single copolymer/InGaN hybrid device, the Commission Internationale de 1＇Eclairage （CIE） coordinates, color temperature Tc and color rendering index Ra at 20mA are （0.323,0.329）, 5960K and 86, respectively. In comparison with the performance of red eopolymer PFO-DBT15 （DOF：DBT=85：15 with DOF being 9＇9- dioctylfluorene） and green copolymer PFO-BT35 （DOF：BT=-65：35） blend/InGaN hybrid white devices, it is concluded that the chemically doped copolymer hybridized device shows a higher emission intensity and spectral stability at a high driving current than the polymer blend.     

Improvement of the outcoupling efficiency of an organic light-emitting device by attaching microstructured films

In this paper, we present and analyse the optical characteristics, such as spectral shift, CIE coordinates, viewing angle dependence, luminous current efficiency and luminous power efficiency, of an organic light-emitting device (OLED) with a commercial diffuser film or a brightness-enhancement film (BEF) attached. Compared to a planar green OLED, the luminous current efficiencies of the OLED with an attached diffuser film or BEF increase by 29% and 23%, respectively. The overall luminous power efficiencies are enhanced by 28% and 7%. Compared to the planar green device, we observe blue shifts at different viewing angles when microstructured films are attached, which is the evidence that the waveguiding modes are being extracted. In our planar OLED, the peak wavelength blue shifts and the full width at the half maximum (FWHM) decrease with increasing viewing angles due to the microcavity effect. When the diffuser is attached, the spectral peak has a constant blue shift (6 nm) compared to that of the planar OLED. On the other hand, in the BEF case, the spectral shift depends on the viewing angle (2-12 nm blue shifts from 0 to 80°). This is due to the different operating principles (scattering and redirected light) of the diffuser and BEF. Since the transmittance spectra of both the diffuser film and the BEF are flat over the visible range, it is suitable for lighting applications by using white OLED. When attaching the films on a commercial white OLED, the luminous current efficiencies of the OLED with an attached diffuser film or BEF increase by 34% and 31%, respectively. The overall luminous power efficiencies are enhanced by 42% and 8%.     

具有光电倍增的宽光谱三相体异质结有机彩色探测器

实验研究了P3HT：PBDT-TT-F：PCBM三相体异质结活性层光谱拓宽及其材料混合度对探测器光电特性的影响以及陷阱辅助光电倍增的机理.在此基础上,获得了一个覆盖350–750 nm波长范围的彩色探测器.该探测器在-1 V低偏压下红绿蓝三基色的光响应度和外量子效率分别达到了470,381,450 mA/W和93%,89%,121%,比探测率均接近10¹² Jones,且各基色的特性参数最大平均相对偏差均小于20%,同时频率带宽分别达到了5,8,8 kHz.结果表明：在保持二相体异质结薄膜原有微观形貌下,掺入少量光谱拓宽材料可实现活性层吸收光谱的拓宽.利用能级陷阱中电子的辅助作用引入外电路空穴注入,可实现探测器光电倍增.通过调节三相材料的混合度可实现基色间探测能力的均衡性.     

变色磷灰石的可见光光谱特征研究

磷灰石是珠宝市场上常见的宝石品种,因颜色丰富而广受欢迎。变色磷灰石是稀有品种且价格高昂,该品种在D65光源（色温6 500 K）下呈黄绿色,A光源（色温2 856 K）下呈粉红色,其可见光光谱的谱学特征与变色成因未被详细研究。基于此,将一颗变色磷灰石晶体,沿其平行c轴和垂直c轴方向各切下一个薄片并双面平行抛光,分别测试其可见光光谱与微量元素。结果发现,其可见光光谱中谱峰较多：位于583和578 nm处的吸收双峰强度最强,位于748和738 nm处的吸收双峰强度中等,分别位于688和526 nm处的吸收峰,强度较弱。还有一些非常微弱的吸收峰,分别位于514,483,473和443 nm处。位于748和738 nm处的吸收双峰与583和578 nm处的吸收双峰共同造成了红橙光区的透射窗,583和578 nm处的吸收双峰与526 nm处的吸收峰共同造成了黄绿光区的透射窗。D65光源和A光源由于相对光谱功率分布不同,在不同透射窗的透过有所不同,导致变色磷灰石在不同光源下呈现出不同颜色。D65光源中黄绿光成分较多,透过黄绿光区透射窗的成分较多,D65光源下磷灰石呈黄绿色,A光源中红光成分较多,通过红橙光区透射窗的成分较多,A光源下磷灰石呈粉红色。因此,磷灰石的变色效应与位于748和738 nm处的吸收双峰,位于583和578 nm处的吸收双峰以及位于526 nm处的吸收峰相关。根据微量元素数据与稀土元素的晶体场理论,这些吸收峰是由稀土元素钕（Nd）导致。根据不同晶体方向样品的可见光光谱特征,平行c轴方向变色效果更好,建议加工变色磷灰石晶体时宝石台面应尽量平行c轴。该研究结合微量元素与可见光光谱分析了变色磷灰石的变色成因,并为其加工切割方向提供了指导。     

基于苯并二噻吩聚合物所制备的三元光电探测器的特性

本文采用P3HT:PTB7:PC61BM为活性层,制备了覆盖可见光范围的三元体异质结有机光电探测器(organic photodetectors,OPDs).利用原子力显微镜、紫外可见吸收光谱和荧光光谱等手段研究了PTB7添加到P3HT:PC61BM体系中对OPDs光学和电学性质的影响,发现当P3HT:PTB7:PC6...     

Stimulated-emission-depletion microscopy with a multicolor stimulated-Raman-scattering light source

We describe a subdiffraction-resolution far-field fluorescence microscope employing stimulated emission depletion (STED) with a light source consisting of a microchip laser coupled into a standard single-mode fiber, which, via stimulated Raman scattering (SRS), yields a comb-like spectrum of seven discrete peaks extending from the fundamental wavelength at 532 nm to 620 nm. Each of the spectral peaks can be used as STED light for overcoming the diffraction barrier. This SRS light source enables the simple implementation of multicolor STED and provides a spectral output with multiple available wavelengths from green to red with potential for further expansion.     

Laser emission from mixtures of dipyrromethene dyes in liquid solution and in solid polymeric matrices

Laser emission from binary mixtures of different dyes both in liquid solution and incorporated into solid polymeric matrices, covering the spectral region from green to red, is investigated. Mixtures of two synthesized dyes, analogs of the commercial dye Pyrromethene 567 (PM567), allowed covering the spectral range from green to orange. Tuning ranges in solid state of up to 42 nm with good photostabilities were demonstrated. To extend the tuning range to the red, binary mixtures of the dyes Pyrromethene 597 (PM597)/Pyrromethene 650 (PM650), PM567/DCM, and PM597/DCM were also studied. In liquid solution, a mixture of dyes PM567 and DCM allowed for narrow-linewidth laser emission continuously tunable over a range of 85 nm. In solid-state, mixtures of dyes PM597 and PM650 allowed laser emission tunable over two separate spectral regions up to a wavelength of 619 nm.     

Study of UV excited white light‐emitting diodes for optimization of luminous efficiency and color rendering index

Wavelength down‐converted white‐light sources excited by near ultraviolet light‐emitting diodes require specific phosphor properties in order to generate high‐quality white light (namely, light with good color rendition and stability of color coordinate). Simulation and experimental results are discussed, with particular emphasis on the spectral distribution property of red phosphor required to realize high values of luminous efficiency and color rendition. A peak wavelength of 610 nm and an FWHM of 80 nm for the spectral power distribution were proposed, and co‐doped phosphate materials were synthesized successfully. This can contribute to a white‐light source with a luminous efficiency of 45 lm/W and color rendering index greater than 90 at a color temperature of 5600 K and an operational current of 20 mA. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

落叶松受雅氏落叶松尺蠖危害程度光谱检测

近年来蒙古国雅氏落叶松尺蠖灾害不断加剧，逐渐逼近大兴安岭地区，将威胁我国北方森林生态系统安全。以现代遥感监测方法替代传统检测方法，及早掌握该虫害发生发展规律对防控有重要意义。为快速、大范围遥感监测雅氏落叶松尺蠖灾害，利用光谱分析技术研究了该害虫危害下落叶松受害程度检测模型。通过实测健康和轻度、中度、重度受害落叶松光谱，计算与比较不同受害程度落叶松原始光谱和去除包络线光谱的敏感度，揭示光谱敏感波段及去除包络线光谱敏感性。然后对去除包络线光谱进行一阶导数变换获得光谱特征参数并分析其随受害程度的变化特征，构建基于CART(分类与回归树)算法的落叶松受害程度光谱检测模型。研究表明：去除包络线光谱敏感性比原始光谱更显著，尤其在480～520 nm(蓝边)、640～720 nm(红谷、红边)、1 416～1 500 nm(短波红外谷)等波段内光谱敏感度介于0.1～2.0，而且出现了敏感峰现象。随受害程度增加，去除包络线光谱敏感性增强趋势比原始光谱更明显；在蓝边波段上去除包络线光谱敏感峰位置向短波方向移动，即502 nm→490 nm，而在红谷及红边、短波红外谷等波段上光谱敏感峰位置向长波方向移动，即664 nm→672 nm和1 436 nm→1 448 nm；红谷位置和短波红外谷位置归一化反射率以及红谷和短波红外谷面积呈上升趋势。在蓝边与红边波段内去除包络线光谱一阶导数对受害程度有明显响应，出现了波峰现象。随害虫危害程度加剧红边位置蓝移(718 nm→700 nm)，红边斜率及面积和蓝边斜率及面积呈下降趋势。基于此，利用红边斜率、红谷位置和短波红外谷位置归一化反射率、红谷和短波红外谷面积、蓝边斜率及面积等去除包络线光谱特征参数构建的CART模型对落叶松受害程度有很好的检测能力。与多元线性回归模型相比，CART模型检测精度更高，其Kappa系数达0.875。研究结果对雅氏落叶松尺蠖灾害的防治有参考价值。     

Low driving voltage in white organic light-emitting diodes using an interfacial energy barrier free multilayer emitting structure

The driving voltage of white organic light-emitting diodes (WOLEDs) with blue fluorescent and red phosphorescent emitting materials was lowered by using a device architecture with little energy barrier between emitting layers. A mixed layer of hole and electron transport materials was used as a host material and an interlayer, reducing the driving voltage of WOLEDs. The driving voltage of WOLEDs was reduced by more than 4 V and power efficiency of WOLEDs was improved by more than 40% due to little energy barrier for holes and electrons injection in light-emitting layer. In addition, there was little change of electroluminescence spectra from 100 to 10,000 cd/m².     

High power and high efficiency green light emitting diode on free‐standing semipolar (11$ \bar 2 $2) bulk GaN substrate

We demonstrate a high power green InGaN/GaN multiple‐quantum‐well (MQW) light emitting diode (LED) with a peak emission wavelength of 516 nm grown on low extended defect density semipolar (11 2) bulk GaN substrate by metal organic chemical vapor deposition. The output power and external quantum efficiency (EQE) at drive currents of 20 and 100 mA under direct current (DC) operation were 5.0 mW, 10.5% and 15.6 mW, 6.3%, respectively. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Semiconductor-Optical-Amplifier-Based Inverted and Non-Inverted Wavelength Conversion at 40 Gb/s Using a Detuning Optical Bandpass Filter

We experimentally demonstrate 40Gb/s semiconductor-optical-amplifier-based tunable wavelength conversion （WC） using a detuning optical bandpass filter. Both inverted and non-inverted WCs are obtained by shifting the filter central wavelength with respect to the probe wavelength. When the filter is red shifted by 0.4nm or blue shifted by 0.3nm, the WC is non-inverted. However, when the filter is blue shifted by 0.1 nm, the WC is inverted. It is experimentally demonstrated that the WC has a tunable range covering the C-band.     

Extending the response spectrum of organic photodetectors by quaternary active layer method with complementary absorption spectra

In this work, we report a new method for extending the response spectra of organic photodetectors (OPDs) by incorporating PBDT-TT-C and PBDT-TT-F in the P3HT:PC₆₁BM. The effects of PBDT-TT-C and PBDT-TT-F incorporation on the optical and electrical properties of OPDs were investigated, It was found that when the mass ratio of P3HT:PBDT-TT-F:PBDT-TT-C:PC₆₁BM was 12:2:2:8, the response spectrum of the active layer was extended to 780 nm. The responsivity (R) and external quantum efficiency (EQE) of the OPDs reached 340, 376, 315 mA/W and 67%, 88%, 85% under 630, 530, and 460 nm illumination and −1 V bias, respectively, and the detectivity (D*) reached 10¹² Jones. The results show that the inclusion of an appropriate amount of donor material with similar chemical structure and complementary absorption spectrum can reduce the influence of the doping material on the micro-morphology of the original film while improving the absorption of the spectrum. The interaction between the donor materials promotes the generation of photogenerated carriers and increases the photocurrent of the OPDs. In addition, the incorporation of the different component promotes crystallization of the film, resulting in a reduction in dark current of the OPDs.     

松材线虫危害下马尾松光谱特征与估测模型研究

松材线虫病又叫松树枯萎病,是由于松材线虫寄生在松树上引起的毁灭性死亡病害,其发病速度快、传播迅速、防治难度大。如何识别松材线虫害并对其程度进行估测,对我国森林资源及生态环境保护具有重要意义。研究表明,马尾松叶绿素、水含量会随着虫害程度的加深逐渐减少,不同虫害程度的马尾松光谱反射率呈现较大差异,因此光谱分析技术在虫害程度估测方面具有独特优势。针对不同虫害程度的马尾松样本,研究了其光谱特征参数的变化规律,以实测光谱特征参数为自变量,样本虫害程度量化值为因变量,利用线性回归方程构建了虫害程度估测模型。该研究在光谱特征指标选择和估测模型方法上作了有价值的探索,对评估松材线虫病害有一定的指导意义,可为相关研究及当地精准农业提供科学支持和应用参考。首先针对不同虫害程度的马尾松样本,研究其在绿光、红光及近红外波段内的光谱反射率变化规律,构建指示样本虫害程度的六个光谱特征参数：绿峰反射率(RGP)、绿峰位置(GPP)、红谷反射率(FRB)、红谷位置(RBP)、红边斜率(RES)、红边位置(REP),分析光谱特征参数与虫害程度的相关性。然后构建虫害程度估测模型,其步骤可描述为：(1)计算健康、轻度、中度、重度四种不同虫害程度下的样本光谱特征参数RGP,FRB和RES;(2)量化健康、轻度、中度、重度四种样本虫害程度值;(3)以实测光谱特征参数为自变量,样本虫害程度量化值为因变量,利用线性回归方程构建虫害程度估测模型。实验中选取重庆市涪陵区永胜林场、冒合寨工区的马尾松林为研究对象,随机选取健康、染病、完全枯死的马尾松植株进行监测。数据采集过程中使用ASD野外光谱分析仪FieldSepc4,采集波段范围为从可见光400 nm到近红外波段1 100 nm处,分辨率为1 nm。共采集了70条马尾松植株的有效光谱数据,根据不同虫害程度,将其划分为健康、轻度、中度、重度和枯死五种类型,并利用Matlab软件进行处理分析,得到其光谱反射率曲线。选择涵盖绿光区(510～580 nm)、红光区(620～680 nm)和近红外区(680～780 nm)三个波段,计算各个波段的光谱特征参数,构建虫害程度估测模型。实验结果表明：(1)针对枯死样本,其“绿峰”和“红谷”特征消失,红边陡峭上升趋势被拉平。其他几种类型样本光谱特征参数RGP,FRB和RES与虫害程度呈负相关,虫害程度越深,其光谱特征参数值越小,即健康(RGP)>轻度(RGP)>中度(RGP)>重度(RGP),健康(FRB)>轻度(FRB)>中度(FRB)＞重度(FRB),健康(RES)>轻度(RES)>中度(RES)>重度(RES)。(2)随着虫害程度加深,光谱特征参数GPP向长波方向移动,即存在“红移”现象,而光谱特征参数RBP和REP向短波方向移动,即存在“蓝移”现象。(3)与一元线性估测模型相比,二元线性估测模型具有较大的相关系数R2,较小的估计误差E以及残差。实验中对两棵马尾松样本虫害程度进行估测,二元线性估测模型的结果为PD=2.990 7和PD=3.679,与实际情况相符。在后续研究中将对1 100~2 500 nm波段特征进行相关性分析。     

Investigation of an efficient YbF3/Al cathode for tris-(8-hydroxyquinoline)aluminum-based small molecular organic light-emitting diodes

Efficient tris-(8-hydroxyquinoline)aluminum (Alq₃)-based organic light-emitting diodes (OLEDs) using YbF₃ as the electron injection layer have been investigated. With an YbF₃ (3.0 nm)/Al cathode, the device with Alq₃ as the emitting layer achieved a better performance than the control device with a LiF (0.5 nm)/Al cathode. The release of the low-work-function metal Yb is responsible for the performance enhancement. From the analysis by atomic force spectroscopy and X-ray photoemission spectroscopy, it is observed that the Alq₃-cathode interface could be well covered by YbF₃ at an optimum thickness of 3.0 nm, which helps to prevent the contact between Alq₃ and Al, and to reduce the destruction of Alq₃ by Al.     

基于单叶反射光谱的转基因大麦光合特性分析

反射光谱分析可为植物叶片生理学过程、叶片表面及内部生化组分、结构特征等提供丰富信息。本文以转基因大麦及其原始栽培种为材料,基于单叶反射光谱检测研究了转基因大麦的反射光谱特征及指数的变化。研究结果表明,将不同大麦叶片反射率配对求得反射率比值曲线易于探查出不同大麦品系间反射光谱差异,且转基因大麦与传统对照差异较大的区域主要集中在650～700nm的红谷及红边位置附近,该波段的光谱反射率可能对外源基因的插入扰动反应敏感;而在550nm附近的绿峰及750nm以上近红外区的反射率基本无明显变化。反射光谱指数λRE,mND,SIPI,RRed/RGreen,PRI及NIRR800的差异性变化呈现出时间特性且取决于品系。如上述指数显著变化将意味着植物光合生理过程、功能及状态发生改变。     

Temperature-dependent photoluminescence of Mg-doped CdS nanowires

Sixfold symmetrical Mg-doped CdS nanowires have been fabricated through high temperature vapor-solid deposition process. The experimental study of the temperature-dependent photoluminescence properties of the Mg-doped CdS nanowires from 10 K to 300 K was reported. The Mg-doped CdS nanowires show intensive cyan-color light emission properties from 10 K to 200 K. The results indicate that there are two strong peaks situated at the green emission (at 528 nm) and red emission (at 655-695 nm), and two weak UV emission peaks at 378 nm and 417 nm, respectively. The ratio of green to red emission was decreased with temperature increased. When the temperature is above 200 K, the orange-color light was observed from the Mg-doped CdS nanowires. Therefore, the intensive emission properties of the Mg-doped CdS nanowires have a great potential for use as nanoscaled optoelectronic intensive light emitters under different temperature.     

温室番茄冠层和叶片光谱特征分析及营养诊断

通过温室基质栽培,利用ASD光谱仪和傅里叶光谱分析仪测量了四种营养水平下温室番茄冠层和叶片的光谱反射曲线,并检测了对应叶片的水分含量、叶绿素含量和氮含量,分析了不同营养水平下番茄冠层和叶片的反射光谱变化,并对番茄叶片含水量的敏感波长以及冠层反射光谱的红边波长进行了研究。结果表明:温室番茄冠层反射光谱曲线在可见光550nm左右均有叶绿素的强反射峰,近红外区反射率高于可见光区。在同一生长期,随基质营养水平的提高,番茄冠层反射率在可见光波段不断减小,在近红外波段不断增大,且红边波长位置出现"红移"现象。利用530和760nm特征波长得到的归一化颜色指标NDCI与叶片氮含量有较好相关性,R2为0.7511。     

Spectral Based Estimation of Optical Path Difference of Interference Colors

A spectral intensity distribution of interference colors which is a function of optical path difference (OPD) is represented as a pattern vector on a subspace. A new algorithm to design a color scale on the subspace to estimate OPD values is proposed. In experiments, interference colors generated by a differential interference microscope (DIM) were examined. A subspace spanned by four orthogonal bases was constructed to make a color scale to determine OPD values in the range between 0 nm and 1000 nm. Estimated OPD values almost coincided with these expected. In an experiment on two-dimensional interference colors obtained by a spherical surface of a ballbearing observed by DIM, the resultant OPD distribution coincided well with that expected within a standard deviation of 12.8 nm.