Ion induced controlled modifications in structural and optical properties of indium oxide thin films – studies with 25‐keV Co− and N+ beam implantations

Two sets of indium oxide thin films (~150 nm) grown on quartz substrates using thermal evaporation technique were processed separately with 25‐keV Co^? and N⁺ ions with several fluences ranging from 1.0 × 10¹⁵ to 1.0 × 10¹⁶ ions/cm². The pristine and the ion implanted films were characterized by Rutherford backscattering spectroscopy (RBS), X‐ray diffraction (XRD), scanning electron microscopy (SEM), atomic force microscopy (AFM) and UV–Vis spectrometry. The RBS spectra reveal signature of only cobalt and nitrogen in accordance to their fluences confirming absence of any contamination arising due to ion implantation. An increase in the average crystallite size (from 13.7 to 15.3 nm) of Co^? ions implanted films was confirmed by XRD. On the other hand, the films implanted with N⁺ ions showed a decrease in the average crystallite size from 20.1 to 13.7 nm. The XRD results were further verified by SEM micrographs. As seen in AFM images, the RMS surface roughness of the samples processed by both ion beams was found to decrease a bit (29.4 to 22.2 nm in Co^? implanted samples and 24.2 to 23.3 nm in N⁺ implanted samples) with increasing fluence. The Tauc's plot deduced from UV–visible spectroscopy showed that the band gap decreases from 3.54 to 3.27 eV in Co^? implanted films and increases from 3.38 to 3.58 eV for films implanted with N⁺ ions. The experimental results suggest that the modifications in structural and optical properties of indium oxide films can be controlled by optimizing the implantation conditions. Copyright © 2017 John Wiley & Sons, Ltd.     

Ion implant-induced change in polyimide films monitored by variable energy positron annihilation spectroscopy

6FDA-pMDA polyimide membranes were implanted with 140 keV N⁺ ions to fluences between 2 × 10¹⁴ and 5 × 10¹⁵ cm⁻². Variable energy positron annihilation spectra were taken and spectral features compared to previously reported changes in gas permeability and permselectivity of these membranes as a function of ion fluence. Positron data corroborate the explanation of these changes in terms of molecular damage caused by the implant: for fluences up to about 1 × 10¹⁵ cm⁻², the concentration of irradiation-induced defects merely increases with implant fluence; while fluences exceeding this threshold value create a second type of positron annihilation site, thereby marking a distinct change in the structure of the polymer, which is responsible for the vast improvement of gas permselectivity data found at the same threshold fluence. PACS codes: 78.70.Bj—positron annihilation; 61.82.Pv—polymers, organic compounds; 61.72.Ww—doping and impurity implantation. © 1998 John Wiley & Sons, Inc. J. Polym. Sci. B Polym. Phys. 36: 2413–2421, 1998     

Medium energy ion irradiation of Ge surface – search for a better understanding of the surface nano‐patterning

We report the morphological changes on Ge surfaces upon 50 keV Ar⁺ and 100 keV Kr⁺ beam irradiation at 60° angle of incidence. The Ge surfaces having three different amorphous–crystalline (a/c) interfaces achieved by the pre‐irradiation of 50 keV Ar⁺ beam at 0°, 30° and 60° with a constant fluence of 5 × 10¹⁶ ions/cm² were further processed by the same beam at higher fluences viz. 3 × 10¹⁷, 5 × 10¹⁷, 7 × 10¹⁷ and 9 × 10¹⁷ ions/cm² to understand the mechanism of nano‐scale surface patterning. The Kr⁺ beam irradiation was carried out only on three fresh Ge surfaces with ion fluences of 3 × 10¹⁷, 5 × 10¹⁷ and 9 × 10¹⁷ ions/cm² to compare the influence of projectile mass on surface patterning. Irrespective of the depth of a/c interface, the nanoscale surface patterning was completely missing on Ge surface with Ar⁺ beam irradiation. However, the surface patterning was evidenced upon Kr⁺ beam irradiation with similar ion fluences. The wavelength and the amplitude of the ripples were found to increase with increasing ion fluence. In the paper, the mass redistribution at a/c interface, the incompressible solid flow through amorphous layer, the angular distribution of sputtering/backscattering yields and the generation of non‐uniform stress across the amorphous layer are discussed, particularly in analogy with low energy experiments, to get better understanding of the mechanism of nanoscale surface patterning by the ion beams. Copyright © 2016 John Wiley & Sons, Ltd.     

Effect of N5+ ion implantation on optical and gas sensing properties of WO3 films

In this paper we report the optical and gas sensing behaviours of tungsten oxide (WO₃) films, implanted with 45‐keV N^{5 +} ions of different fluences in the range 1 × 10¹⁵ to 1 × 10¹⁷ cm^–2. The film with fluence 1 × 10¹⁵ cm^–2 shows the most intense PL spectrum with two prominent peaks near UV and blue regions. The morphological changes because of ion implantation are also investigated by atomic force microscopy. Because of implantation the gas sensitivity of the film, in exposure of methane, is found to increase with reasonably fast response and recovery times. With the increase of the concentration of methane, the sensors show better result. Present work also includes the effect of N^{5 +} ion implantation on the structural property of WO₃ films. Copyright © 2015 John Wiley & Sons, Ltd.     

Dielectric and conductivity studies of 90 MeV O7+ ion irradiated poly(ethylene oxide)/montmorillonite based ion conductor

In the present work effect of 90 MeV O⁷⁺ ions with five different fluences on poly(ethylene oxide) (PEO)/Na⁺-montmorillonite (MMT) nanocomposites has been investigated. PEO/MMT nanocomposites were synthesized by solution intercalation technique. With the increase in irradiation fluence, gallery spacing of MMT increases in the composite and an exfoliated nanostructure is obtained at the fluence of 5?×?10¹² ions/cm² as revealed by X-ray diffraction results. Highest room temperature ionic conductivity of 4.2?×?10^?6?S?cm^?1 was found for the fluence 5?×?10¹² ions/cm², while the conductivity for unirradiated polymer electrolyte was found to be 7.5?×?10^-8?S?cm^?1. The increase in intercalation of PEO chains inside the galleries of MMT results in the increase in interaction between Na⁺ cation and oxygen heteroatom leading to the increase in ionic conductivity of the composites. Surface morphology and interactions among the various constituents in the nanocomposites at different fluence have been examined by scanning electron microscopy and Fourier transform infrared spectroscopy, respectively. The appearance of peak for each fluence in the loss tangent suggests the presence of relaxing dipoles in the polymer nanocomposite electrolyte films. With the increase in ion fluence the peak shifts towards higher frequency side, suggesting decrease in the relaxation time.     

Novel floating‐type low‐energy ion gun for high‐resolution depth profiling in ultrahigh vacuum

A floating‐type low‐energy ion gun (FLIG) has been developed for high‐resolution depth profiling in ultrahigh vacuum (UHV). This UHV‐FLIG allows Ar⁺ ions of primary energy down to 50 eV to be provided with high current intensity. The developed UHV‐FLIG was sufficiently compact, being ～30 cm long, to be attached to a commercial surface analytical instrument. The performance of the UHV‐FLIG was measured by attaching it to a scanning Auger electron microprobe (JAMP‐10, Jeol), the base pressure of which in the analysis chamber was ～1 × 10^?7 Pa. The vacuum condition of ～5 × 10^?6 Pa was maintained during operation of the UHV‐FLIG without a differential pumping facility. Current density ranged from 41 to 138 µA cm^?2 for Ar⁺ ions of primary energy 100–500 eV at the working distance of 50 mm. This ensures a sputtering rate of ～10 nm h^?1 with 100 eV Ar⁺ ions for Si, leading to depth profiling of high resolution in practical use. Copyright © 2003 John Wiley & Sons, Ltd.     

Ultrashallow depth profiling using SIMS and ion scattering spectroscopy

The accuracy of ultrashallow depth profiling was studied by secondary ion mass spectrometry (SIMS) and high‐resolution Rutherford backscattering spectroscopy (HRBS) to obtain reliable depth profiles of ultrathin gate dielectrics and ultrashallow dopant profiles, and to provide important information for the modeling and process control of advanced complimentary metal‐oxide semiconductor (CMOS) design. An ultrathin Si₃N₄/SiO₂ stacked layer (2.5 nm) and ultrashallow arsenic implantation distributions (3 keV, 1 × 10¹⁵ cm^?2) were used to explore the accuracy of near‐surface depth profiles measured by low‐energy O₂⁺ and Cs⁺ bombardment (0.25 and 0.5 keV) at oblique incidence. The SIMS depth profiles were compared with those by HRBS. Comparison between HRBS and SIMS nitrogen profiles in the stacked layer suggested that SIMS depth profiling with O₂⁺ at low energy (0.25 keV) and an impact angle of 78° provides accurate profiles. For the As⁺‐implanted Si, the HRBS depth profiles clearly showed redistribution in the near‐surface region. In contrast, those by the conventional SIMS measurement using Cs⁺ primary ions at oblique incidence were distorted at depths less than 5 nm. The distortion resulted from a long transient caused by the native oxide. To reduce the transient behavior and to obtain more accurate depth profiles in the near‐surface region, the use of O₂⁺ primary ions was found to be effective, and 0.25 keV O₂⁺ at normal incidence provided a more reliable result than Cs⁺ in the near‐surface region. Copyright © 2007 John Wiley & Sons, Ltd.     

Investigation of O7+ swift heavy ion irradiation on molybdenum doped indium oxide thin films

Molybdenum (0.5 at%) doped indium oxide thin films deposited by spray pyrolysis technique were irradiated by 100 MeV O⁷⁺ ions with different fluences of 5×10¹¹, 1×10¹² and 1×10¹³ ions/cm². Intensity of (222) peak of the pristine film was decreased with increase in the ion fluence. Films irradiated with the maximum ion fluence of 1×10¹³ ions/cm² showed a fraction of amorphous nature. The surface microstructures on the surface of the film showed that increase in ion fluence decreases the grain size. Mobility of the pristine molybdenum doped indium oxide films was decreased from ～122 to 48 cm²/V s with increasing ion fluence. Among the irradiated films the film irradiated with the ion fluence of 5×10¹¹ ions/cm² showed relatively low resistivity of 6.7×10^?4 Ω cm with the mobility of 75 cm²/V s. The average transmittance of the as-deposited IMO film is decreased from 89% to 81% due to irradiation with the fluence of 5×10¹¹ ions/cm².     

Effects of annealing on the surface structure of Ga‐isotope‐implanted single‐crystal ZnO

We studied the effects of Ga isotope implantation on surface structure using single‐crystal (0001) ZnO with an atomically flat surface. The surface morphology with steps and terraces was greatly changed by Ga implantation and post‐annealing: the step‐and‐terrace structure was suppressed by Ga implantation but a step‐and‐terrace structure appeared on the surface after post‐annealing at 900 °C for 4 min. The diffusion of Ga towards the surface through dislocation pipes at a density of up to 5 × 10⁸ cm^?2 was the dominant mechanism, and a significant amount of Ga moved from the implanted layer to the surface. The reaction between Ga and ZnO during post‐annealing appeared to improve sheet resistance and surface morphology. Copyright © 2005 John Wiley & Sons, Ltd.     

Electrical properties of ion-implanted poly(p-phenylene sulfide)

Ion implantation of impurities into thin films of poly(p-phenylene sulfide) (PPS) is found to increase the conductivity of the material by up to 12 orders of magnitude. The increase is stable under exposure to ambient conditions, in contrast to the instability of the conductivity increases in PPS produced by chemical doping with AsF₅. PPS films 0.1–0.2 μm thick are spin cast from solution onto interdigitated electrodes patterned on an oxidized silicon substrate. The room-temperature interelectrode resistance is measured as a function of implantation fluence. An estimate of film conductivity is obtained from this resistance with a simple model for the electrode and film geometry. A first experiment yielded similar conductivity increases for implantation of either arsenic or krypton. At a fluence of 1 × 10¹⁶cm^?;2, which corresponds to an average impurity concentration of 2.5 × 10²¹cm^?3, the conductivity reaches an apparently saturated value of 1.5 × 10^?5 (Ω cm)^?1. Infrared spectra of the films before and after implantation suggest that crosslinking may be present in the implanted films, and Auger studies show stoichiometric changes throughout the implanted layer. These results suggest that the observed conductivity changes are the result of molecular rearrangements produced by the implantation rather than the result of specific chemical doping. Specific chemical doping may, however, explain the results of a second experiment in which implantation of bromine resulted in substantially larger conductivities found to increase at an approximate linear rate from a value of 1.0 × 10^?4 (Ω cm)^?1 at a fluence of 1 × 10¹⁶ cm^?2 to a value of 4.0 × 10^?4 (Ω cm)^?1 at a fluence of 3.16 × 10¹⁶ cm^?2.     

Ion‐beam‐induced morphology on the surface of thin polymer films at low current density and high ion fluence

The effect of Xe⁺ bombardment on the surface morphology of four different polymers, polystyrene (PS), poly(phenylene oxide), polyisobutylene, and polydimethylsiloxane, was investigated in ion energy and fluence ranges of interest for secondary ion mass spectrometry depth‐profiling analysis. Atomic force microscopy (AFM) was applied to analyze the surface topography of pristine and irradiated polymers. AFM analyses of nonirradiated polymer films showed a feature‐free surface with different smoothness. We studied the influence of different Xe⁺ beam parameters, including the incidence angle, ion energy (660–4000 eV), current density (0.5 × 10² to 8.7 × 10² nA/cm²), and ion fluence (4 × 10¹⁴ to 2 × 10¹⁷ ion/cm²). Xe⁺ bombardment of PS with 3–4 keV at a high current density did not induce any change in the surface morphology. Similarly, for ion irradiation with lower energy, no surface morphology change was found with a current density higher than 2.6 × 10² nA/cm² and an ion fluence up to 4 × 10¹⁶ ion/cm². However, Xe⁺ irradiation with a lower current density and a higher ion fluence led to topography development for all of the polymers. The roughness of the polymer surface increased, and well‐defined patterns appeared. The surface roughness increased with ion irradiation fluence and with the decrease of the current density. A pattern orientation along the beam direction was visible for inclined incidence between 15° and 45° with respect to the surface normal. Orientation was not seen at normal incidence. The surface topography development could be explained on the basis of the balance between surface damage and sputtering induced by the primary ion beam and redeposition–adsorption from the gas phase. Time‐of‐flight secondary ion mass spectrometry analyses of irradiated PS showed strong surface modifications of the molecular structure and the presence of new material. © 2000 John Wiley & Sons, Inc. J Polym Sci B: Polym Phys 39: 314–325, 2001     

Optical Properties of Swift Heavy Ion Beam Irradiated Polycarbonate/Polystyrene Composites Films

Polycarbonate/polystyrene composites films were irradiated by 55 MeV Carbon ion beam with fluence ranging from 1 × 10¹¹ to 1 × 10¹³ ions/cm². The polymer composites films were prepared by solution mixing method. The effects of ion beam on structural, optical and surface morphology of PC/PS composites films were investigated by X-ray diffraction (XRD), UV-visible spectroscopy (UV-vis), Fourier Transform Infrared Spectroscopy (FT-IR) and Optical Microscope. The XRD pattern shows the average crystallite size, percentage of crystallinity and inter-chain separation, which decreases with increase in ion fluences. UV-vis spectra show that the energy band gap and transmittance decreases while number of carbon atoms increases with fluences. The FT-IR spectra evidenced very small change in cross linking and chain scissoring at high ion fluences, while the optical microscopy shows a color change with ion fluence.     

100 keV H+ ion irradiation of as‐deposited Al‐doped ZnO thin films: An interest in tailoring surface morphology for sensor applications

We report the influence of 100 keV H⁺ ion beam irradiation on the surface morphology, crystalline structure, and transport properties of as‐deposited Al‐doped ZnO (Al:ZnO) thin films. The films were deposited on silicon (Si) substrate by using DC sputtering technique. The ion irradiation was carried out at various fluences ranging from 1.0 × 10¹² to 3.0 × 10¹⁴ ions/cm². The virgin and ion‐irradiated films were characterized by X‐ray diffraction, Raman spectroscopy, atomic force microscopy, and Hall probe measurements. Using X‐ray diffraction spectra, 5 points Williamson‐Hall plots were drawn to deduce the crystallite site and strain in Al:ZnO films. The analysis of the measurements shows that the films are almost radiation resistant in the structural deformation under chosen irradiation conditions. With beam irradiation, the transport properties of the films are also preserved (do not vary orders of magnitude). However, the surface roughness and the crystallite size, which are crucial parameters of the ZnO film as a gas sensor, are at variation with the ion fluence. As ion fluence increases, the root‐mean‐square surface roughness oscillates and the surface undergoes for smoothening with irradiation at chosen highest fluence. The crystallite size decreases initially, increases for intermediate fluences, and drops almost to the value of the pristine film at highest fluence. In the paper, these interesting experimental results are discussed in correlations with ion‐matter interactions especially energy losses by the ion beam in the material.     

Study of thermal recrystallisation in Si implanted by 0.4-MeV heavy ions

A Si crystal layer on SiO₂/Si was implanted using 0.4-MeV Kr⁺, Ag⁺, and Au⁺ at ion fluences of 0.5 × 10¹⁵ to 5.0 × 10¹⁵ cm⁻². Subsequent annealing was performed at temperatures of 450° and 800° for 1 hour. The structural modification in a Si crystal influences ion beam channelling phenomena; therefore, implanted and annealed samples were investigated by Rutherford backscattering spectrometry under channelling (RBS-C) conditions using an incident beam of 2-MeV He⁺ from a 3-MV Tandetron in random or in aligned directions. The depth profiles of the implanted atoms and the dislocated Si atom depth profiles in the Si layer were extracted directly from the RBS measurement. The damage accumulation and changes in the crystallographic structure before and after annealing were studied by X-ray diffraction (XRD) analysis. Lattice parameters in modified silicon layers determined by XRD were discussed in connection to RBS-C findings showing the crystalline structure modification depending on ion implantation and annealing parameters.     

Conductive and optical properties of PPV modified by N+ ion implantation

In this article, a soluble poly[2‐methoxy‐5‐(3′‐methyl)butoxy]‐p‐phenylene vinylene (MMB‐PPV) was synthesized by dehydrochlorination reaction and the MMB‐PPV film was implanted by nitrogen ions (N⁺) with the ion dose and energy in the range of 3.8 × 10¹⁵ to 9.6 × 10¹⁶ ions/cm² and 15–35 keV, respectively. The surface conductivity, optical absorption, optical band gap (E_g) of modified MMB‐PPV film were studied, and the third‐order nonlinear optical susceptibility (χ⁽³⁾) as well as its environmental stability of modified MMB‐PPV film were also measured by degenerate four‐wave mixing system. The results showed that the surface conductivity of MMB‐PPV film was up to 3.2 × 10^?2 S when ion implantation was performed with the energy of 35 keV at an ion dose of 9.6 × 10¹⁶ ions/cm², which was seven order of magnitude higher than that of the pristine film. UV‐Vis absorption spectra demonstrated that the optical absorption of MMB‐PPV film was enhanced gradually in the visible region followed by a red shift of optical absorption threshold and the E_g value was reduced from 2.12 eV to 1.59 eV with the increase of ion dose and energy. The maximum χ⁽³⁾ value of 2.45 × 10^?8 esu for modified MMB‐PPV film was obtained with the ion energy of 20 keV at an ion dose of 3.8 × 10¹⁶ ions/cm², which was almost 33 times larger than that for pristine film. In comparison to the reduction of 17% in the χ⁽³⁾ value of pristine MMB‐PPV film, the maximum χ⁽³⁾ value of 2.45 × 10^?8 esu for modified MMB‐PPV film decreased by over 5.3% when they had been exposed under the same ambient conditions for 90 days. © 2010 Wiley Periodicals, Inc. J Polym Sci Part B: Polym Phys 48: 2072–2077, 2010     

Luminescence properties of Cu‐ion‐implanted and annealed ZnO thin films deposited by chemical vapor deposition and pulsed laser deposition

Ion implantation techniques were used to study the effect of an MgO additive on the luminescence properties induced by Cu in ZnO thin films. Cu ions (accelerating voltage of 75 keV, dose of 4.5 × 10¹⁴ ions/cm²) were implanted at room temperature in nondoped and Mg‐doped ZnO thin films. After annealing, emissions in the visible region originating from Cu phosphor were observed at 510 nm in CVD‐ZnO and at 450 nm in Mg‐doped ZnO (MZO) thin films. The Cu depth profile shows distortion in the low‐concentration region of CVD‐ZnO. After the annealing, the Cu implant was homogenized in thin films, and then the Cu concentration was determined to be 1.5 × 10¹⁹ ions/cm³ in CVD‐ZnO and 5.6 × 10¹⁸ ions/cm³ in MZO thin films. Copyright © 2005 John Wiley & Sons, Ltd.     

Evaluation of antithrombogenicity of ion‐implanted silicone rubber

Ion implantations into silicone rods were performed at 150 keV with doses ranging from 1 × 10⁷ to 3 × 10¹⁷ ions/cm². The antithrombogenicity was tested by the superior vena cava (SVC) indwelling method for two days in rats with ¹¹¹In‐tropolone ‐ platelets, and by the inferior vena cava (IVC) indwelling method. Results of the SVC indwelling method showed that platelet accumulation on ion ‐ implanted specimens decreased. Macroscopic views of the ion‐implanted IVC specimens in dogs revealed little thrombus formation. In particular, SVC indwelling method revealed that O₂⁺, K⁺ and Kr⁺ (1 × 10¹⁷ ions/cm²) implantation was most effective in reducing platelet accumulation. Copyright © 1999 John Wiley & Sons, Ltd.     

Control of endothelial cell adhesion to polymer surface by ion implantation

The bio‐compatibility of ion implanted polymers has been studied by means of in vitro attachment measurements of bovine aorta endothelial cells. The specimens used were polystyrene (PS), polyethylene (PE), polypropylene (PP) and expanded polytetrafluoroethylene (ePTFE). He⁺ and Ne⁺ ion implantation were performed at an energy of 150 keV with fluences between 1 × 10 ¹³ to 1 × 10 ¹⁷ ions/cm ² at room temperature. Wettability was estimated by means of a sessile drop method. The chemical and physical structures of ion implanted polymers were investigated by contact angle measurements, atomic force microscopy and X‐ray photoelectron spectroscopic analysis in relation to cell attachment behavior. The strength of cell attachment on ion implanted specimens at static and under flow conditions was also measured. Ion implanted PP and ePTFE were found to exhibit remarkably higher adhesion and spreading of endothelial cells than non‐implanted specimens. In contrast to these findings, ion implanted PS and PE only demonstrated a little improvement of cell adhesion in this assay. Copyright © 2001 John Wiley & Sons, Ltd.     

High-energy ion implantation of polymers: Poly(ethylene terephthalate)

The effect of high-energy ion implantation of oxygen into a thin film of poly(ethylene terephthalate) (PET) was studied by Fourier transform infrared spectroscopy and differential scanning calorimetry (DSC). Mylar samples 13 μm thick were implanted with 6-MeV oxygen ions at fluences ranging from 5 × 10¹² to 2 × 10¹⁴ ions/cm². The DSC data showed a substantial loss of crystallinity, even at the lowest fluence, which extended deeper into the polymer film than the predicted range for oxygen deceleration in PET. Solubility measurements indicated the presence of cross-linking, especially at the highest fluence, but bands due to cross-linking could not be detected in the infrared. The trans/gauche ratio for the glycol group conformation was measured by a pair of conformationally sensitive infrared bands. Surprisingly, the conformation of the glycol segments did not change appreciably with increasing fluence, although crystallinity decreased and degree of cross-linking increased. The implications these results have on possible mechanisms of chemical and physical alterations of the polymer structure by ion implantation are discussed.     

Density–depth profiles of an As‐implanted Si wafer studied by repeated planar sputter etching and total reflection x‐ray fluorescence analysis

The implantation of a high dose of high‐energy ions into an Si wafer causes amorphization of the original monocrystalline structure within a near‐surface layer. The in‐depth distribution of both Si atoms of the wafer and As ions implanted at a dose of 1 × 10¹⁷ ions cm^?2 and an energy of 100 keV is studied. A novel method combining a repeated planar and broad sputter etching with differential weighing, surface analysis by total reflection x‐ray fluorescence and Tolansky interferometry is used for this investigation. Different depth profiles are recorded on the nanometre scale for the concentration defined as the mole ratio of As and Si, for the mass density of the implanted layer and for the number density of As and Si. The results generally correspond with measurements of Rutherford backscattering spectrometry and only deviate when the assumptions made for the mass density do not fit well. An appropriate approach to this quantity involves the number density of implanted ions but, furthermore, considers a variation of the number density of Si atoms during implantation, especially for a high dose and high‐energy implantation. The variation can be taken into account by a factor γ, where γ > 1 indicates compression and γ < 1 indicates extension of the original crystalline structure. For the above mentioned implantation, γ is measured separately for each sublayer to obtain accurate depth profiles. Copyright © 2003 John Wiley & Sons, Ltd.