Thermoluminescence and thermal properties of rare-earth-ion-activated YAG crystals

The paper contains results of studies of repeated thermoluminescence of yttrium-aluminum garnet (YAG) crystals (Y_3−xLn_xAl₅O₁₂, x=0, 2) activated by rare earth ions (Pr³⁺, Nd³⁺, Tb³⁺, Dy³⁺, Ho³⁺, Er³⁺) previously exposed to⁶⁰Co γ-radiation at 77 K and subjected to many cooling-heating cycles. A possible mechanism of repeated thermoluminescence is considered from the viewpoint of a dynamic evolutionary approach. The thermal conductivity of YAG-TR³⁺ crystals (TR³⁺: Gd³⁺, Tb³⁺, Dy³⁺, Er³⁺, Tm³⁺, and Lu³⁺) is studied to establish its relation with repeated thermoluminescence. Presented at the National Conference on Molecular Spectroscopy, Samarkand (Uzbekistan), September 25–27, 1996. Samarkand State University, 15, University Blvd., 703004, Samarkand, Republic of Uzbekistan. Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 65, No. 1, pp. 137–140, January–February, 1998.     

GdVO4:Eu3+的热释光研究

GdVO4:Eu^3 有着十分优良的发光特性，它发光强度高，特别是具有很好的温度特性，在室温以上发光强度随温度的升高而增强，很利于在高温下使用此材料。本文对它的热释光进行了研究，其热释光峰值分别位于193，235和304K，根据计算可知它们的陷阱深度分别为0.39,0.47和0.61eV，陷阱的主要来源可能是F^ ,F和钒空位；Eu^3 掺入导致的晶格畸变，其中最主要的来源可能是空位导致的。     

Optical power limiting and transmitting properties of cadmium iodide single crystals: Temperature dependence

Optical limiting properties of the single crystals of cadmium iodide are investigated using ns laser pulses. It is found that the transmissions in the crystals increase with increasing temperature. However, they limit the transmissions at high input powers. The limiting power is found to be higher at higher temperature. From the measured transmission data, the photon absorption coefficients are estimated. The temperature dependence of the coefficients shows a decrease in magnitude with increasing temperature. This might be due to the temperature-dependent bandgap shift of the material. The results demonstrate that the cadmium iodide single crystals are promising materials for applications in optical power limiting devices.     

(Zn,Cd)S：Cu,Cl发光材料的热释发光

在ZnS中分别掺杂质量分数为5%、7%、10%、15%、20%的CdS,得到一系列(Zn,Cd)S:Cu,Cl粉末电致发光材料样品。测量样品材料的热释发光曲线,发现五个样品在温度-180～-20℃范围内均有两个明显的热释发光峰。CdS含量的变化对材料中陷阱的种类和陷阱深度没有明显的影响,两个峰值温度在-150℃和-50℃附近。Cd离子的掺入改变了材料较深陷阱中载流子的浓度,随着CdS量的增加,使得在-50℃的热释发光峰的相对强度增大。通过测量样品的发光光谱和发光亮度,发现随着CdS含量的增加,样品材料的发射光谱向长波方向移动,发光亮度呈下降的趋势。     

EPR and Thermoluminescence in ZnO Single Crystals with Anionic Vacancies

The radiation defects created in hydrothermal ZnO–Li single crystals by irradiating them with electrons, protons, and highenergy ions have been investigated. The anionic vacancies (Fcenters) in ZnO are established to be the centers of radiationless recombination of the charge carriers with a photoionization energy of 2.3 eV (a signal of the photoEPR with the gfactor for the F⁺center: g = 1.9948 and g = 1.9963). The anionic vacancies in the form of the F and F⁺ states are a good reference of the electron and hole processes. The [F_Li]^×centers that correspond to the oxygen vacancies localized near the point defects Li_Zn are detected. In the temperature range 530–660 K, ZnO crystals display thermally stimulated processes such as the healing of anionic vacancies (530–630 K) and the disappearance of the [F_Li]^×centers (610–660 K).     

Temperature dependence of positron lifetime in GaAs crystals with defects

Positron lifetime has been measured as a function of temperature in Sidoped GaAs single crystals subjected to various heat treatments. Defects produced by these heat treatments trap positrons. In all the GaAs samples containing defects positron lifetime was found to decrease with temperature in the range from 375 K to 16 K. The decrease is explained as due to the decrease in the trapping rate. The trapping rate is mainly controlled by the diffusion of the positron to the trap. The diffusion constant is determined mainly by the scattering from charged Si impurities.     

Thermoluminescence of x-irradiated CaSO4:Dy phosphors and role of Na2SO4 as a charge compensator

The thermoluminescence of x-irradiated CaSO₄: Dy phosphors has been studied for diverse activator concentrations. The concentration-dependence of these phosphors on the increase of glow peak intensities has been found to be remarkable. For higher concentration of dysprosium the concentration quenching effect has been observed. This has been attributed to the resonant transfer of energy from one activator atom to another, bringing the possible migration of energy in a solid, which is likely to get dissipated without luminescence, at the quenching site itself. The effect of irradiation time on the glow peak intensities reveals the initial linearity and a subsequent decrease indicating the possible radiation damage. The role of Na₂SO₄ as a charge compensator has been studied in detail. An attempt has been made to unravel the type of kinetics involved in the process, by calculating the activation energies by different methods. It has been concluded that the type of kinetics involved in the process is bimolecular.     

Thermoluminescence of YAG:Nd crystals coloured with x-rays

The spectral distribution of the thermoluminescence (TL) of YAG:Nd crystals coloured by x-ray irradiation at room temperature (RT) and at 80 K has been investigated. The spectral distribution of TL in the uv-, visible and near ir ranges shows that the energy transfer by bound exciton states (BES) to the RE³⁺ ions (Nd³⁺ and Tb³⁺) decreases with increasing temperature. The TL spectrum in the uv range is ascribed to the hole defect centers. Diminution of the energy transferred by the BES to the Nd³⁺ and Tb³⁺ ions is the direct cause for the occurrence of the group of lines ascribed to the Nd³⁺ ions in TL observed at LT, whereas at RT and higher only the groups of Tb lines are observed.     

Dopant dependence of the oxidation rate of ion implanted silicon

The computer code developed in recent years at Argonne National Laboratory for the investigation of the energy and structure of interfaces in ionic crystals has been extended to permit the consideration of neutral intrinsic and extrinsic point defects in such interfaces. As examples, bound Schottky pairs as well as substitutional Fe²⁺ and Ca²⁺ impurities are considered in the (100) surface and surface region. The role of isovalent impurities in the free (110) surface region and in a coincident-site twist grain boundary are also investigated. Wherever possible our results are compared and found in agreement with results obtained by means of the HADES program.     

Thermoluminescence induced in Plastics above Room Temperature as a Means of Gamma Ray Dosimetry

The gamma-induced thermoluminescence (TL) in five types of plastics has been studied. The plastics used are Lexan, Makrofol, CA 80-15, LR 115 and CR-39. The result showed that the TL response for Makrofol and Lexan is linear in the range 5 …700 krad, 5 … 3000 krad, respectively. This suggests the possible use of these plastics for gamma dosimetry in the dose range 5 … 3000 krad.

Die gammastrahlen-induzierte Thermolumineszenz wurde an fünf Plastmaterialien untersucht, und zwar an Lexan, Makrofol, CA 80-15, LR 115 und CR-39. Die Ergebnisse zeigten, daβ die Thermolumineszenz-Reaktion für Makrofol und Lexan in Bereich 5 … 700 krad bzw. 5 … 3000 krad war. Das ermöglicht die Verwendung dieser Plastematerialien zur Gamma-Dosimetrie im Dosisbereich von 5 … 3000 krad.     

Point defect interaction in alkali halide crystals

Abstract

Molecular statics method is used to determine the energy and configuration peculiarities of vacancy-bivacancy interaction in alkali halide crystals. It is shown that high level of local vacancy supersaturation defines the possibility of cluster formation. The study of carrier traps by luminescence methods is used to reveal vacancy clusters.     

High intensity magnetic fields for the identification and study of donors in epitaxial gallium arsenide

High intensity magnetic fields are needed for the far infrared photoconductivity method to be used reliably in the identification of unitentional contaminants in ultra high purity epitaxial GaAs. We show experimental evidence that the inhomogeneous Stark broadening of the 1s2p (m=–1) transition of the hydrogen-like donor almost disappears as the magnetic field is increased to 20 Tesla. Since the spectral lines also become narrower and the central cell correction (chemical shift) becomes larger, the signature curve method of identification permits positive identification of donor species. In particular, the donors Ge and Se have been identified in specimens that were reported to contain carbon and Sn respectively.Work supported by the U.S. Air Force Office of Scientific Research under Grant #AFOR-78-3708.Supported by the National Science Foundation.     

Improvement of the scintillation properties of Gd3Ga3Al2O12:Ce,B single crystals having tailored defect structure

A novel approach is reported to minimize various defect centers in Ce doped Gd₃Ga₃Al₂O₁₂ single crystals to improve the scintillation properties. The crystals of Gd₃Ga₃Al₂O₁₂ codoped with 0.2 at% Ce and B (GGAG:Ce,B) have been grown in air and argon ambient using the Czochralski technique. The scintillation light output of crystals grown in Ar ambient was significantly increased after annealing the crystals in air. The measured light output of 60000 ph/MeV for annealed crystals is the highest value reported among this class of materials. As a consequence, the energy resolution at 662 keV gamma‐rays from a ¹³⁷Cs source was improved from 8% for the crystals grown in air to 6% for crystals grown in Ar and subsequently annealed in air. Further, the thermal quenching energy of photoluminescence (PL) emission was increased to be 470 meV for the annealed crystals. The thermoluminescence (TL) measurements suggest that the crystals grown in Ar ambient and post‐growth annealed in air may have a lesser concentration of trap centers which subsequently lead to the improvement in optical and scintillation properties leading to a superior detector performance. (© 2015 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim)     

Restored thermoluminescence in oxide crystals

In this paper, we present the results of a thermoluminescence study on several oxide crystals, including Y₃Al₅O₁₂ (YAG), Y₃Al₅O₁₂:Nd (YAG:Nd), Lu₂SiO₅:Ce (LSO:Ce), Y₂SiO₅:Ce (YSO:Ce), Gd₂SiO₅:Ce (GSO:Ce), PbWO (PWO), and PbWO:La (PWO:La). A phenomenon involving restoration of thermoluminescence (TL) glow peaks is found to occur in some of the crystals investigated; crystals γ-irradiated at room temperature and subsequently stored for some time in the dark at 77 K exhibit TL glow peaks in the range below room temperature. This phenomenon is caused not by a thermally or optically stimulated process, but rather as a by-product of a tunneling process. The intensity of the restored TL glow peaks measured in LSO:Ce crystals is found to be proportional both to the radiation dose and to the storage-time at low temperature. A phenomenological theoretical model is proposed, in which tunneling recombination occurs between deep electron and hole traps accompanied by the simultaneous ejection of an electron to the conduction band; some of these conduction electrons then repopulate shallow traps. An oxygen vacancy with two trapped electrons is assumed to be the deep electron trap in this model. The role of oxygen vacancies is confirmed by heating in air at 1000 °C. This model is applied specifically to LSO:Ce, and several possible candidates are suggested for shallow traps in that material.     

NMR on gallium single crystals: Not yet an absolute thermometer at very low temperatures

A twin crystal of Ga was investigated in the temperature and field ranges of 0.5 to 10 mK and 60 to 250 mT, respectively. In these fields the magnetic interaction is too large to be treated as a perturbation of the quadrupolar interaction. Therefore, the eigenvalues of the Schrödinger equation were calculated numerically, and then used to determine the crystalline axes by pulsed NMR on ⁶⁹Ga and ⁷¹Ga. The temperature dependence of the NMR line intensities was measured using ¹⁹⁵Pt-NMR for thermometry. The observed intensities do not follow the theoretical expectations for a spin system of low nuclear polarization. In addition, a temperature-dependent frequency shift was observed. These results suggest that the effect of interactions between the spins, as well as more complicated spin dynamics, need to be considered in order to use gallium as an absolute thermometer at temperatures below 1 mK.     

Characteristics of photoconductivity in thallium monosulfide single crystals

This work elucidates the photoconductivity (PC) of thallium monosulfide single crystals. Results are obtained in the 77–300 K temperature range, 1500–4500 V lx excitation intensity, 6–18 V applied voltage, and in the 640–1500 nm wavelength range. Both the ac-photoconductivity (ac-PC) and the spectral distribution of the photocurrent are studied in different values of light intensity, applied voltage and temperature. Dependencies of carrier lifetime on light intensity, applied voltage and temperature are also investigated as a result of the ac-PC measurements. The temperature dependence of the energy gap width was described by studying the dc-photoconductivity (dc-PC).      

Thermoluminescence and optically stimulated luminescence in various phases of doped Na2SO4

The dependence of optically stimulated luminescence (OSL) and thermoluminescence (TL) response due to crystal phase in Cu and Cu,Mg-doped Na₂SO₄ was studied. Study shows that the slowly cooled samples which crystallize in phase V show good OSL sensitivity whereas the quenched samples of Na₂SO₄ which crystallize in phase III irrespective of doping show no OSL sensitivity. However, during storage when phase III samples get converted to phase V, samples show OSL sensitivity comparable to freshly prepared samples in phase V. Hence, it is observed that TL–OSL properties of doped Na₂SO₄ are phase dependent .This study will be helpful in developing OSL phosphors in which phase plays an important role in deciding the desired properties.     

Thermoluminescence in single crystals of RbBr:OH− and RbBr:Ca2+

Optical absorption, thermoluminescence glow and emission spectra of RbBr:Ca²⁺ and RbBr:OH⁻ have been studied and analysed. It is observed that both Ca²⁺ and OH⁻ ions enhance theF-centre concentration.F _Z1 band in RbBr:Ca²⁺ appears at 1.55 eV. TL glow peak corresponding toF _Z1 centre on analysis gives a trap depth of 0.84 eV. OH⁻ ions in the crystal seem to act as TL ‘killers’. Spectral distribution of emission under the glow peaks shows five bands around 1.5, 1.8, 2.1, 2.5 and 2.9 eV. Probable models of TL mechanism are suggested to explain the observed TL emission bands.