Optical properties of polyvinyl alcohol doped (Se80Te20)100–xAgx (0 ≤ x ≤ 4) composites

Polyvinyl alcohol (PVA) doped (Se₈₀Te₂₀)_100–xAg_x (0 ≤ x ≤ 4) thin films were prepared by the spin-coating technique on a quartz substrate. The optical parameters of PVA-doped (Se₈₀Te₂₀)_100–xAg_x (0 ≤ x ≤ 4) composites at the same chalcogen concentration (S₀ = 0.1 mg ml^?1) and PVA/(Se₈₀Te₂₀)₉₆Ag₄ composites at three different chalcogen concentrations viz. S₁ = 0.3 mg ml^?1, S₂ = 0.6 mg ml^?1 and S₃ = 1 mg ml^?1 have been studied. The semi-crystalline nature of the as-deposited thin filmsisdetermined by X-ray diffraction. The transmission and reflection spectra of PVA-doped Se–Te–Ag thin films were obtained in a 350–650 nm spectral region. The optical-band gap has been calculated from the transmission and reflection data. The refractive index has been calculated by the measured reflection data. It has been found that the optical-band gap increases, but the refractive index, extinction coefficient, and the real and imaginary parts of the dielectric constant decrease, with increase in Agcontent in PVA-doped (Se₈₀Te₂₀)_100–xAg_x (0 ≤ x ≤ 4) thin films. Such type of behavior is explained on the basis of decrease in density of the defect states. However, the optical-band gap has been found to be decreased and all other optical parameters show increase in their values with increase in concentration of (Se₈₀Te₂₀)₉₆Ag₄ glass in PVA-doped composites. The results have been explained on the basis of cluster-size formation at the time of dissolution. This study shows that the optical properties of new composites are affected by the change in silver and chalcogen concentration.     

Low‐temperature photoluminescence studies of In‐rich InAlN nanocolumns

High‐quality In_x Al_1–xN (0.71 ≤ x_In ≤ 1.00) nanocolumns (NCs) have been grown on Si(111) substrates by rf‐plasma‐assisted molecular‐beam epitaxy (rf‐MBE). Low‐temperature photoluminescence (LT‐PL) spectra of various In‐rich InAlN NCs were measured at 4 K and single peak PL emissions were observed in the wavelength region from 0.89 µm to 1.79 µm. Temperature‐dependent PL spectra of In_0.92Al_0.08N NCs were studied and the so‐called “S‐shape” (decrease–increase–decrease) PL peak energy shift was observed with increasing temperature. This shift indicates the carrier localization induced by the In segregation effect and is different from the anomalous blue shift frequently observed in InN films and nanowires with high residual carrier concentra‐ tions. (© 2012 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Oxygen vacancy induced ferromagnetism in rutile TiO2–x

First‐principles LDA + U calculations have been performed to study the effects of oxygen vacancies (V_O) on the electronic structure and magnetism in undoped rutile TiO_2–x . Instead of treated as an adjustive parameter, the value of U was determined by constrained‐density‐functional calculations. The calculated electronic structure reveals that the valence electrons released by V_O would occupy mainly the neighboring Ti:3d orbital which then becomes spin‐polarized due to intra‐atomic exchange interaction, thereby giving rise to the half‐metallic ferromagnetism. The magnetization induced by V_O in rutile TiO_2–x is almost proportional to the V_O concentration (x) for x > 0.0625, and becomes 0 for x ≤ 0.0417. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Effective surface passivation of crystalline silicon using ultrathin Al2O3 films and Al2O3/SiNx stacks

We measure surface recombination velocities (SRVs) below 10 cm/s on p‐type crystalline silicon wafers passivated by atomic–layer–deposited (ALD) aluminium oxide (Al₂O₃) films of thickness ≥10 nm. For films thinner than 10 nm the SRV increases with decreasing Al₂O₃ thickness. For ultrathin Al₂O₃ layers of 3.6 nm we still attain a SRV < 22 cm/s on 1.5 Ω cm p‐Si and an exceptionally low SRV of 1.8 cm/s on high‐resistivity (200 Ω cm) p‐Si. Ultrathin Al₂O₃ films are particularly relevant for the implementation into solar cells, as the deposition rate of the ALD process is extremely low compared to the frequently used plasma‐enhanced chemical vapour deposition of silicon nitride (SiN_x). Our experiments on silicon wafers passivated with stacks composed of ultrathin Al₂O₃ and SiN_x show that a substantially improved thermal stability during high‐temperature firing at 830 °C is obtained for the Al₂O₃/SiN_x stacks compared to the single‐layer Al₂O₃ passivation. Al₂O₃/SiN_x stacks are hence ideally suited for the implementation into industrial‐type silicon solar cells where the metal contacts are made by screen‐printing and high‐temperature firing of metal pastes. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Room‐Temperature Insulating Ferromagnetic (Ni,Co)1+2xTi1−xO3 Thin Films

Insulating uniaxial room‐temperature ferromagnets are a prerequisite for commonplace spin wave‐based devices, the obstacle in contemporary ferromagnets being the coupling of ferromagnetism with large conductivity. It is shown that the uniaxial A_{1 + 2x}Ti⁴⁺_{1 ? x}O₃ (ATO), A = Ni²⁺,Co²⁺, and 0.6 < x ≤ 1, thin films are electrically insulating ferromagnets already at room temperature. The octahedra network of the ATO and the corundum and ilmenite structures are the same yet different octahedra‐filling proved to be a route to switch from the antiferromagnetic to ferromagnetic regime. Octahedra can continuously be filled up to x = 1, or vacated (?0.24 < x < 0) in the ATO structure. TiO‐layers, which separate the ferromagnetic (Ni,Co)O‐layers and intermediate the antiferromagnetic coupling between the ferromagnetic layers in the NiTiO₃ and CoTiO₃ ilmenites, can continuously be replaced by (Ni,Co)O‐layers to convert the ATO‐films to ferromagnetic insulator with abundant direct cation interactions.     

Standard‐free composition measurements of Alx In1–xN by low‐loss electron energy loss spectroscopy

We demonstrate a standard‐free method to retrieve compositional information in Al_x In_1–xN thin films by measuring the bulk plasmon energy (E_p), employing electron energy loss spectroscopy (EELS) in a scanning transmission electron microscope (STEM). Two series of samples were grown by magnetron sputter epitaxy (MSE) and metal organic vapor phase epitaxy (MOVPE), which together cover the full com‐ positional range 0 ≤ x ≤ 1. Complementary compositional measurements were obtained using Rutherford backscattering spectroscopy (RBS) and the lattice parameters were obtained by X‐ray diffraction (XRD). It is shown that E_p follows a linear relation with respect to composition and lattice parameter between the alloying elements from AlN to InN allowing for straightforward compositional analysis. (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Dielectric tunability and conduction mechanisms of?nanostructured (Pb1?xSrx)TiO3 thin films

The effect of nanosize grains to enhance dielectric tunability in chemically prepared (Pb_1−x Sr _x )TiO₃ (PST) (x=0.1 to 0.5) thin films has been observed. The grain size is evaluated from X-ray diffraction patterns and atomic force microscopy. The average grain size lies in the range of 80–23 nm with varying Sr content. The nanosize grains in the PST films control the dielectric behavior up to the higher frequency region and exhibit large tunability with low loss factor at room temperature. The current–voltage characteristics show a large tunability as electron transport takes place within a highly resistive Fermi gap.     

Large area mapping of the alloy composition of Alx Ga1–x N using infrared reflectivity

The energy position of a dip observed in the IR‐reflectance spectra recorded from wurtzite c ‐plane Al_x Ga_1–x N epitaxial films grown on SiC substrate reflects the composition of the alloy. A calibration procedure is presented with the possibility of mapping for large area wafer. The technique is non‐destructive, scalable and fast. The limitations are discussed and comparisons with other techniques are made. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Band alignment at sputtered ZnSx O1–x/Cu(In,Ga)(Se,S)2 heterojunctions

Valence band offsets ΔE_VBM at ZnS_x O_1–x/Cu(In,Ga)(Se,S)₂ (CIGSSe) heterojunctions have been studied by photoemission spectroscopy (XPS, UPS) as a function of composition x in sputtered ZnS_x O_1–x films. In the composition range from ZnO to ZnS we found ΔE_VBM between –(2.1 ± 0.3) eV and –(0.8 ± 0.4) eV, respectively. Considering the optical band gaps, the conduction band offsets ΔE_CBM range from –(0.1 ± 0.3) eV to +(1.4 ± 0.4) eV. These results suggest that sputtered ZnS_x O_1–x is suitable as substitution for the CdS buffer and ZnO window layers in standard chalcopyrite‐based solar cells. Current–voltage characteristics of the solar cells have been investigated as a function of the composition x. (© 2012 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Effect of Zn substitution on the electrical properties of Bi2Co0.1V0.9O5.35 synthesized by sol-gel method

Samples of Bi₂V_0.9Co_0.1-xZn_xO_5.35, 0.02 ≤ x ≤ 0.08 with layered Aurivillius structure were synthesized successfully by sol-gel citrate method. Structural and electrical characterization of compositions has been investigated by X-ray diffraction, thermogravimetric analysis–differential scanning calorimetric (TGA–DSC) analysis and AC impedance spectroscopy. The tetragonal γ phase has been observed for all investigated samples. The AC impedance response of samples has been measured in the frequency range of 20 Hz to 1 MHz. The impedance for pellets decreases as thermal energy increases. The contribution of grain to the conduction process is more than that of grain boundary. The ionic conductivity and dielectric permittivity are found to be composition-dependent and increase with increasing Zn concentration. The maximum electrical conductivity observed for the composition x = 0.08 is σ = 4.51 × 10^?4 S cm^?1 at 300 °C.     

Effect of Cu–Al double substitution on the electrical properties of Bi4V2O11

Bi₂Cu_0.1?xAl_xV_0.9O_5.35?x/2?δ, 0.02 ≤ x ≤ 0.08, were synthesized by standard solid-state reaction route. Structural and electrical properties of samples are characterized by X-ray diffraction (XRD), differential thermal analysis (DTA), Fourier transform infrared (FT-IR) and alternating current (AC) impedance spectroscopy. The tetragonal γ′ phase structure is preserved to room temperature with compound x = 0.02. The stabilization of β orthorhombic phase is observed for compositions 0.04 ≤ x ≤ 0.05. As the Al content increases, the monoclinic α phase is evidenced for materials 0.06 ≤ x ≤ 0.08. The electrical investigation of Bi₂Cu_0.1?xAl_xV_0.9O_5.35?x/2?δ system has been performed in the frequency range from 20 Hz to 1 MHz using AC impedance spectroscopy. The impedance spectra indicate the two semicircle arcs associated with the bulk and grain boundary resistances at temperature below ～450 ^○C. The conductivity generally changes when Al is substituted. The highest conductivity at 300 ^○C (σ = 2.55 × 10^?4 S cm^?1) is shown for x = 0.02.     

Magnetic properties of the mixed spinel Co1+xSnxFe2−2xO4

The structural and magnetic properties of the mixed spinel Co_1+xSn_xFe_2?2xO₄ system for 0.1≤x≤0.5 have been studied by means of X‐ray diffraction, magnetization, a.c. susceptibility and Mössbauer effect measurements. X‐ray intensity calculations indicate that Sn⁴⁺ ions occupy only octahedral (B) sites replacing Fe³⁺ ions and the added Co²⁺ ions substitute for A‐site Fe³⁺ ions. The lattice constants are determined and the applicability of Vegard's law has been tested. The Mössbauer spectra at 300 K have been fitted with two sextets in the ferrimagnetic state corresponding to Fe³⁺ at tetrahedral (A) and octahedral (B) sites for x≤0.4. The Mössbauer intensity data show that Sn possesses a preference for the B‐site of the spinel. As expected, the hyperfine field and Curie temperature determined from a.c. susceptibility decreases with increasing Sn content. The variation of the saturation magnetic moment per formula unit measured at 77 and 300 K with Sn content is satisfactorily explained on the basis of Néel's collinear spin ordering model for x=0.1–0.4.     

La2-xNdxCuO4+δ(0.1≤x≤1.2)体系中滞弹性弛豫与相变内耗研究

通过对La_2-xNd_xCuO_4+δ(0.1≤x≤1.2)体系中滞弹性弛豫与相变内耗性能的研究发现,当0.1≤x≤1.0时,在250K左右存在一个与间隙氧有关的弛豫内耗峰,并且当0.1≤x≤0.4时,弛豫内耗峰峰高随着x值的增大而升高,此时体系为正交结构;当0.5≤x≤1.0时,体系在宏观上呈现四方结构,此时内耗峰峰高随着x< 关键词： 2-xNd_<i>xCuO_4+δ')" href="#">La_2-xNd_<i>xCuO_4+δ 间隙氧 弛豫内耗峰 相变内耗峰     

Structural and Optical Properties of Zn1‐xMgxO Prepared by Calcination of ZnO + Mg(OH)2 after Hydro Micro Mechanical Activation

Zn_1‐xMg_xO microcrystals are produced in the 0.15 ≤ x ≤ 1 composition range by calcination of ZnO + Mg(OH)₂ after hydro micro mechanical activation according to the patent WO2018065735A1. The structural properties of the samples have revealed the cohabitation of wurtzite and rock‐salt phases for x values ranging from 0.15 up to 0.6 with a clear increase of the proportion of cubic phase with x. A single cubic phase is observed in the range 0.66 ≤ x < 1. From the purity of these samples produced at very low cost, it is expected that they will be used as precursors for growth of advanced light emitters integrated into an already existing process as they exhibit exceptionally efficient (and robust with T) light emission in the ultraviolet region.     

Microstructure,dielectric, and piezoelectric properties of 0.38Bi(Gax Sc1–x )O3–0.62PbTiO3 high temperature piezoelectric ceramics

0.38Bi(Ga_x Sc_1–x )O₃–0.62PbTiO₃ (BGSPTx) ceramics have been prepared by using the conventional mixed oxide method. X‐ray diffraction analysis revealed that BGSPTx has a pure perovskite structure, and the crystal symmetry of BGSPTx changed from rhombohedral to tetragonal with increasing Ga content (x). The Curie temperature (T_C) of BGSPTx ceramics is in the range of 448–467 °C for different x. The ferroelectric phase transition of BGSPTx was found to be of the first order type according to the Curie–Weiss law. For x = 0.125, BGSPTx ceramics show enhanced piezoelectric properties: piezoelectric constant d₃₃ = 420 pC/N and d₃₁ = –142 pC/N, planar and thickness electromechanical coupling factors k_p = 56.27% and k_t = 56.00%, respectively. The high‐T_C of BGSPTx coupled with its excellent piezoelectric properties suggests those future high‐temperature applications. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Synthesis and characterization of arc deposited magnetic (Cr,Mn)2AlC MAX phase films

(Cr_1–xMn_x)₂AlC MAX phase thin films were synthesized by cathodic arc deposition. Scanning transmission electron microscopy including local energy dispersive X‐ray spectroscopy analysis of the as‐deposited films reveals a Mn incorporation of as much as 10 at% in the structure, corresponding to x = 0.2. Magnetic properties were characterized with vibrating sample magnetometry, revealing a magnetic response up to at least room temperature. We thus verify previous theoretical predictions of an antiferromagnetic or ferromagnetic ground state for Cr₂AlC upon alloying with Mn. (© 2014 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Effect of Zn–Ti double substitution on the electrical properties of Bi4V2O11

New samples of the Bi₂Zn_0.1–xTi_xV_0.9O_5.35+x; 0.02 ≤ x ≤ 0.08 system have been synthesized through a standard solid-state reaction route. XRD analysis and differential thermal analysis have been used to characterize the phase structure of samples. The γ′ phase is stabilized to room temperature in all investigated samples. The electrical properties of the BIZNTIVOX system have been studied by using AC impedance spectroscopy. An AC impedance response as a function of frequency (20 Hz–1 MHz) has been used to investigate the electrical conductivity and the dielectric permittivity in the temperature range of 150 °C–700 °C. In this temperature range, the phase transition γ′ to γ has been observed in all the compositions studied. AC impedance spectroscopy indicates that the resistance of samples decreases with increase of temperature. The ionic conductivity of samples appeared as a two-line region in Arrhenius dependence. At 300 °C, the highest ionic conductivity is shown by the composition x = 0.05 (σ₃₀₀ = 1.35 × 10^?4 S cm^?1).     

Effect of B2O3 on the structure and properties of tungsten–tellurite glasses

The elastic properties and Debye temperatures of xB₂O₃–70TeO₂–(30–x)WO₃, (0 ≤ x ≤ 30 mol%) glasses have been investigated using sound velocity measurements at 4 MHz. Ultrasonic and thermal parameters, combined with the results of IR spectroscopic analyses, were employed to explore the effect of B₂O₃ on the structure of tungsten–tellurite glasses. According to IR analysis, there is competition between WO₆ and TeO₄ units to form BO₄ units, and the vibrations of the tellurite structural units are shifted towards lower wavenumbers on the formation of non-bridging oxygens. It is assumed that B₂O₃ acts as a modifier by decreasing the glass-transition temperature T _g and increasing both the thermal stability and glass formation range of the tellurite glasses. The change in density and molar volume with B₂O₃ content reveals that the borate units are less dense than the tellurite structural units. The observed compositional dependence of elastic moduli is interpreted in terms of the effect of B₂O₃ on the coordination number of the tellurite units. A good correlation was observed between experimentally determined elastic moduli and those computed with the Makishima–Mackenzie model.     

Pb1－xMnxSe薄膜的光学特性

采用分子束外延的方法在BaF₂(111)衬底上制备出了高质量的Pb_1-xMn_xSe(0≤x≤0.0681)薄膜.X射线衍射结果表明，Pb₁-xMn_xSe薄膜为立方相NaCl型结构，没有观察到MnSe相分离现象，薄膜的取向为平行于衬底(111)晶面.晶格常数随着Mn含量的增加逐渐减小，Mn含量由Vegard公式得到.通 关键词： 1-xMn_xSe外延薄膜')" href="#">Pb_1-xMn_xSe外延薄膜 透射光谱 带隙 折射率     

Impact of the Ga concentration on the microstructure of CuIn1–x Gax Se2

Cross‐sectional samples of CuIn_1–x Ga_x Se₂ layers grown by a three‐stage process were studied by means of electron backscatter diffraction (EBSD) in completed thin‐film solar cells. The microstructural analysis reveals a dependence of the average grain size on the gallium content x = [Ga]/([Ga] + [In]), with a maximum at x = 0.23. This result is correlated with structural measurements on CuIn_1–x Ga_x Se₂ powder samples showing that the ratio of the lattice constants c /a is equal to 2 for about the same x value. The pseudocubic crystal structure at about x = 0.23 may lead to reduced strain in the growing CuIn_1–x Ga_x Se₂ layer and therefore larger average grain sizes. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)