Difference approach to the analysis of resistivity recovery data for irradiated short-range ordered alloys

Electrical resistivity recovery (RR) data for irradiated concentrated alloys typically consist of two inseparable parts, one resulting from defect annihilation and the other from short-range order (SRO) effects. These parts exhibit different behaviour and often follow opposite trends. Therefore, in this case, analysis of RR data within the conventional method is too complicated. A new approach to data analysis of such a two-component RR is proposed. The approach involves a new quantity, the difference RR (DRR), which is composed of RR dependences of two similar samples irradiated to different defect concentrations. It is shown that the SRO formation proper and the stages corresponding to the onset of long-range migration of Frenkel pair defects, formed in each part of RR, can be clearly related to certain features of the DRR plots. This interrelationship allows detecting and identifying these stages in each part of RR separately. The validity of the approach is illustrated by analysis of the available pairwise RR data for Fe–16Cr–20Ni and Fe–4Cr alloys. It makes it possible to detect the small contribution from the SRO formation to RR in Fe–4Cr, which we failed to observe previously. It is shown that stage III of Fe–4Cr, which has a negligible contribution to the part of RR induced by defect annihilation, is clearly observed in the part induced by SRO formation.     

One-dimensional migration of interstitial clusters in SUS316L and its model alloys under electron irradiation

The one-dimensional (1D) migration of interstitial clusters in austenitic stainless steel SUS316L and its model alloys, namely, Fe–18Cr–13Ni, Fe–18Cr–13Ni–0.012C, and Fe–18Cr–13Ni–1.7Mn (mass %), was examined using in situ observation by high-voltage electron microscopy. Such 1D migration was confirmed to occur along the ?110? direction at irregular intervals in all these alloys under 1250-kV electron irradiation at room temperature. The frequency of 1D migration was found proportional to electron beam intensity, and was about 1/10 that in high-purity iron under the same irradiation intensity. The distance of 1D migration in the four alloys was less than 10?nm, which was much shorter than that in high-purity iron. No clear difference in the frequency or distance of 1D migration was observed among the four alloys, suggesting that minor solute/impurity elements have no apparent effect on 1D migration in SUS316L.     

Magnetic hysteresis properties of neutron-irradiated VVER440-type nuclear reactor pressure vessel steels

The development of non-destructive evaluation methods for irradiation embrittlement in nuclear reactor pressure vessel steels has a key role for safe and long-term operation of nuclear power plants. In this study, we have investigated the effect of neutron irradiation on base and weld metals of Russian VVER440-type reactor pressure vessel steels by measurements of magnetic minor hysteresis loops. A minor-loop coefficient, which is obtained from a scaling power-law relation of minor-loop parameters and is a sensitive indicator of internal stress, is found to change with neutron fluence for both metals. While the coefficient for base metal exhibits a local maximum at low fluence and a subsequent slow decrease, that for weld metal monotonically decreases with fluence. The observed results are explained by competing mechanisms of nanoscale defect formation and recovery, among which the latter process plays a dominant role for magnetic property changes in weld metal due to its ferritic microstructure.     

Features of degradation and recovery of the optical properties of coatings based on ZnO powder modified with nanoparticles after irradiation

The effect of electron irradiation with energy of 30?keV and fluence up to 7?×?10¹⁶?cm^?2 on diffuse reflection spectra in situ of coatings based on ZnO powders unmodified and modified with zirconium dioxide and aluminum oxide nanopowders was investigated. The higher radiation stability of coatings based on modified pigments in comparison to unmodified pigments has been established. A significant recovery of the reflection spectra of irradiated coatings after exposure to residual vacuum and air was shown.     

A positron beam Doppler broadening analysis of formation and recovery of defects produced by ion irradiation in Fe‒C‒Cu alloys

Mechanisms of radiation embrittlement of reactor pressure vessel steels remain to be fully understood, particularly the nature of so-called ‘matrix defects’. One possible mechanism is vacancy cluster formation, probably assisted by cascade damage. In order to investigate the effect of copper on the formation and annealing processes of vacancy clusters, ion-irradiated Fe?C and Fe?C?Cu were investigated using a variable energy positron beam. Doppler broadening analysis revealed that vacancy-type defects are produced by ion irradiation and that copper addition reduces the open volume of the defects. Post irradiation annealing suggested the vacancy clusters do not have a substantial role in irradiation hardening.     

Effect of ion irradiation on magnetic property of exchange coupled interfacial structures of Fe/NiO and NiO/Fe on Si substrates

The role of defects on the magnetic behaviour of exchange coupled interfacial structures of Fe/NiO and NiO/Fe on Si substrates has been studied. For introduction of defects in the structures, swift (～ 100 MeV) heavy ion irradiation has been used, which is known to cause structural and microstructural modifications. In our earlier study [Srivastava, N; Srivastava, P.C. J. Appl. Phys. 2012, 111, 123909] on similar structures, the significant magnetic behaviour (of exchange bias (EB) and coercivity) for Fe/NiO/nSi interfacial structure was observed and discussed in the realm of interfacial structural modification in the antiferromagnetic layer of the structure. The irradiated interfacial structures have been characterized from X-ray diffraction and M–H characteristics. Structural investigation has shown the formation of various silicide and oxide phases due to the irradiation-induced interfacial intermixing. A significant enhancement in EB field and coercivity has been observed for Fe/NiO/nSi interfacial structure on the irradiation (as compared to unirradiated ones). The observed enhanced EB and coercivity on the irradiation has been understood due to the creation of domain wall pinning centres across the interface as a result of ion irradiation. Moreover, the present study confirms the role of defects in the antiferromagnetic layer to cause the significant change in EB and coercivity. The observation supports the domain state model of EB in the exchange-coupled structures.     

Phase field modeling precipitation of β-phase and mechanical properties change in Zr–Nb alloys under neutron irradiation

ABSTRACT

We study microstructure transformation in Zr–Nb system under neutron irradiation and its mechanical properties change under mechanical loads in a form of shear deformation by using phase field methodology. The developed phase field approach takes into account defects dynamics based on reaction rate theory and elastic contribution to study mechanical properties change. A numerical modeling is provided in three stages: sample preparation, irradiation of the prepared sample and mechanical loading of the irradiated sample. A precipitation of β-Niobium particles of the size of several nanometers is discussed. Results of phase field modeling indicate that β-Niobium particles grow slowly during irradiation due to point defects rearrangement. Statistical analysis of dynamics of radiation-induced microstructure transformations is provided. Simulation results of shear deformation of pre-irradiated and post-irradiated alloys are discussed. Maps of local distribution of strain and stress and strain–stress curves are obtained. Results are verified with experimental data.     

Aggregation of radiation defects in AIN ceramics under He+ ion irradiation

Abstract

The aggregation of F-type defects in AIN has been observed for the first time under He⁺ ion irradiation by using in-situ luminescence measurement. The concentration of aggregation of F-type defects shows a strong dependence on irradiation temperature (300–773 K) under He⁺ ion irradiation. The mechanism of growth and annihilation of the aggregation of F-type defects was discussed.     

Effect of high‐energy light‐ion irradiation on SI‐GaAs and GaAs:Cr as observed by Raman spectroscopy

The structural evolutions of high‐energy (50 MeV) lithium ion (Li³⁺) irradiated undoped semi‐insulating GaAs (SI‐GaAs) and chromium‐doped SI‐GaAs (GaAs:Cr) were investigated by Raman measurements. It is shown that high‐energy Li³⁺ irradiation causes amorphization beyond a fluence of 3 × 10¹³ ions/cm² in undoped SI‐GaAs. Interestingly, the same fluence of ions does not seem to affect the crystallinity in GaAs:Cr appreciably. The effect of ion irradiation on the change in lattice ordering and anharmonicity of the phonon modes of undoped SI‐GaAs and GaAs:Cr is also compared. Copyright © 2011 John Wiley & Sons, Ltd.     

Impact of the displacement damage in channel and source/drain regions on the DC characteristics degradation in deep-submicron MOSFETs after heavy ion irradiation

This paper mainly reports the permanent impact of displacement damage induced by heavy-ion strikes on the deep-submicron MOSFETs.Upon the heavy ion track through the device,it can lead to displacement damage,including the vacancies and the interstitials.As the featured size of device scales down,the damage can change the dopant distribution in the channel and source/drain regions through the generation of radiation-induced defects and thus have significant impacts on their electrical characteristics.The measured results show that the radiation-induced damage can cause DC characteristics degradations including the threshold voltage,subthreshold swing,saturation drain current,transconductance,etc.The radiation-induced displacement damage may become the dominant issue while it was the secondary concern for the traditional devices after the heavy ion irradiation.The samples are also irradiated by Co-60 gamma ray for comparison with the heavy ion irradiation results.Corresponding explanations and analysis are discussed.     

The unambiguous identification of vacancy migration stage in resistivity recovery of irradiated metals based on trapping of vacancies at probe impurity atoms

The method of resistivity recovery is a powerful tool for studying point defects in irradiated metals. However, the method is nonspecific with respect to a type (vacancy or interstitial) of investigated defects. To overcome this shortcoming, we made use of opposite signs of excess electric charges of the vacancies and self-interstitial atoms in a lattice. Resistivity loss takes place on trapping of vacancies at impurity atoms if excess charges of the impurity atom and defect are opposite in sign. A way of selecting the impurity atoms with the excess charge opposite in sign to that of vacancies is proposed. The specific evolution of resistivity recovery spectrum induced by vacancy trapping at the selected impurity atoms (probe traps) allows one to unambiguously identify the stage of free long-range vacancy migration.     

Optical properties and chemical structures of Kapton-H film after proton irradiation by immersion in a hydrogen plasma

Proton irradiation of Kapton-H films was physically simulated in plasma immersion configuration with hydrogen plasmas. Hydrogen ion was implanted into the samples biased to a negative pulse of 20 kV. Optical transmittance of the sample in the wavelength region of 200-2500 nm was determined by a UV-vis-NIR scanning spectrophotometer, and the functional group evolution was examined by X-ray photoelectron spectroscopy (XPS). Atomic force microscopy (AFM) was utilized to determine the roughness and morphology of the samples, and the bulk modification was analyzed by FTIR. The experimental results showed the optical transmittance of the treated sample in the wavelength of 500-2000 nm weakened after proton irradiation, and decreased with the increase of irradiation time. Finger-like bulges emerged on the surface of the sample irradiated by ion irradiation for 30 min, and became bigger and denser with the increase of the irradiation time. The content of C element of the sample increased after proton irradiation, while that of N and O elements decreased because of the bonds breakage of CO, COC and CN during irradiation process.     

Annealing of point defects in p-type germanium after electron irradiation at liquid nitrogen temperature

Annealing of radiation induced defects in p-type germanium was studied by measuring Hall coefficient and conductivity. The dopant was gallium or indium. It was concluded that the annealing stage between 80° and 140°K is caused by migration of the vacancy to the sink of an impurity atom. In this stage the vacancy migrates to a substitutional impurity atom and makes an association. The activation energy of the stage was found tO be 0.1 ev ad it is regarded to be that of the vacancy migration. The model for the annealing stage which occurs in the range 220 to 270°K is proposed as follows: An interstitial impurity atom migrates to a substitutional impurity atom and makes an association. From the activation energy of the stage, the migration energy of the interstitial impurity atom was concluded to be about 0.4 eV for gallium and 0.7 eV for indium atoms.     

Recrystallization of hexagonal silicon carbide after gold ion irradiation and thermal annealing

Silicon carbide (SiC) single crystals with the 6H polytype structure were irradiated with 4.0-MeV Au ions at room temperature (RT) for increasing fluences ranging from 1?×?10¹² to 2?×?10¹⁵ cm^?2, corresponding to irradiation doses from ~0.03 to 5.3 displacements per atom (dpa). The damage build-up was studied by micro-Raman spectroscopy that shows a progressive amorphization by the decrease and broadening of 6H-SiC lattice phonon peaks and the related growth of bands assigned to Si–Si and C–C homonuclear bonds. A saturation of the lattice damage fraction deduced from Raman spectra is found for ~0.8?dpa (i.e. ion fluence of 3?×?10¹⁴ cm^?2). This process is accompanied by an increase and saturation of the out-of-plane expansion (also for ~0.8?dpa), deduced from the step height at the sample surface, as measured by phase-shift interferometry. Isochronal thermal annealing experiments were then performed on partially amorphous (from 30 to 90%) and fully amorphous samples for temperatures from 200 °C up to 1500 °C under vacuum. Damage recovery and densification take place at the same annealing stage with an onset temperature of ~200 °C. Almost complete 6H polytype regrowth is found for partially amorphous samples (for doses lower than 0.8 dpa) at 1000 °C, whereas a residual damage and swelling remain for larger doses. In the latter case, these unrelaxed internal stresses give rise to an exfoliation process for higher annealing temperatures.     

Calculation of the atom displacement concentration in YVO4 and PbMoO4 crystals as a function of electrons or neutrons energy

This work is devoted to the calculation of concentration of radiation displacement defects (RDDs, i.e. atoms, cations or anions displaced from positions in lattice and their associated vacancies) in YVO₄ and PbMoO₄ crystals as a function of particle energy (electrons and neutrons). Energy dependencies of RDD concentrations are discussed in comparison with results of other complex oxide crystals. The obtained results show that the case of electron irradiation the radiation hardness of YVO₄ and PbMoO₄ is higher than for other oxide crystals.     

An investigation of electron and oxygen ion damage in Si npn RF power transistors

Abstract

The effects of 8 MeV electrons and 60 and 95 MeV oxygen ions on the electrical properties of Si npn RF power transistors have been investigated as a function of fluence. The dc current gain (h _FE), displacement damage factor, excess base current (Δ I _B=I _Bpost?I _Bpre), excess collector current (Δ I _C=I _Cpost?I _Cpre), collector saturation current (I _CS) and deep level transient spectroscopy trap signatures of the irradiated transistors were systematically evaluated.     

Optimal deformation and ion irradiation modes for production of a uniform submicrograin structure in molybdenum

Transmission and scanning electron microscopy have been used to investigate the structure of molybdenum after complex processing: deformation and irradiation with accelerated argon ion beams. The analysis of the effect of deformation and radiation parameters on the structural transformations and mechanical properties of molybdenum allowed us to find the optimal mode of processing to form a submicrograin uniform-in-size structure.     

Athermal migration of vacancies in iron and copper induced by electron irradiation

Abstract

Irradiation with high-energy particles induces athermal migration of point defects, which affects defect reactions at low temperatures where thermal migration is negligible. We conducted molecular dynamics simulations of vacancy migration in iron and copper driven by recoil energies under electron irradiation in a high-voltage electron microscope. Minimum kinetic energy required for migration was about 0.8 and 1.0 eV in iron and copper at 20 K, which was slightly higher than the activation energy for vacancy migration. Around the minimum energy, the migration succeeded only when a first nearest neighbour (1NN) atom received the kinetic energy towards the vacancy. The migration was induced by higher kinetic energies even with larger deflection angles. Above several electron-volts and a few 10s of electron-volts, vacancies migrated directly to 2NN and 3NN sites, respectively. Vacancy migration had complicated directional dependence at higher kinetic energies through multiple collisions and replacement of atoms. The probability of vacancy migration increased with the kinetic energy and remained around 0.3–0.5 jumps per recoil event for 20–100 eV. At higher temperatures, thermal energies slightly increased the probability for kinetic energies less than 1.5 eV. The cross section of vacancy migration was 3040 and 2940 barns for 1NN atoms in iron and copper under irradiation with 1.25 MV electrons at 20 K: the previous result was overestimated by about five times.     

One-dimensional migration of interstitial clusters in SUS316L and its model alloys at elevated temperatures

For self-interstitial atom (SIA) clusters in various concentrated alloys, one-dimensional (1D) migration is induced by electron irradiation around 300 K. But at elevated temperatures, the 1D migration frequency decreases to less than one-tenth of that around 300 K in iron-based bcc alloys. In this study, we examined mechanisms of 1D migration at elevated temperatures using in situ observation of SUS316L and its model alloys with high-voltage electron microscopy. First, for elevated temperatures, we examined the effects of annealing and short-term electron irradiation of SIA clusters on their subsequent 1D migration. In annealed SUS316L, 1D migration was suppressed and then recovered by prolonged irradiation at 300 K. In high-purity model alloy Fe-18Cr-13Ni, annealing or irradiation had no effect. Addition of carbon or oxygen to the model alloy suppressed 1D migration after annealing. Manganese and silicon did not suppress 1D migration after annealing but after short-term electron irradiation. The suppression was attributable to the pinning of SIA clusters by segregated solute elements, and the recovery was to the dissolution of the segregation by interatomic mixing under electron irradiation. Next, we examined 1D migration of SIA clusters in SUS316L under continuous electron irradiation at elevated temperatures. The 1D migration frequency at 673 K was proportional to the irradiation intensity. It was as high as half of that at 300 K. We proposed that 1D migration is controlled by the competition of two effects: induction of 1D migration by interatomic mixing and suppression by solute segregation.     

Study of defect evolution by TEM with in situ ion irradiation and coordinated modeling

The paper describes a novel transmission electron microscopy (TEM) experiment with in situ ion irradiation designed to improve and validate a computer model. TEM thin foils of molybdenum were irradiated in situ by 1?MeV Kr ions up to ～0.045 displacements per atom (dpa) at 80°C at three dose rates ?5?×?10^?6, 5?×?10^?5, and 5?×?10^?4?dpa/s – at the Argonne IVEM-Tandem Facility. The low-dose experiments produced visible defect structure in dislocation loops, allowing accurate, quantitative measurements of defect number density and size distribution. Weak beam dark-field plane-view images were used to obtain defect density and size distribution as functions of foil thickness, dose, and dose rate. Diffraction contrast electron tomography was performed to image defect clusters through the foil thickness and measure their depth distribution. A spatially dependent cluster dynamic model was developed explicitly to model the damage by 1?MeV Kr ion irradiation in an Mo thin foil with temporal and spatial dependence of defect distribution. The set of quantitative data of visible defects was used to improve and validate the computer model. It was shown that the thin foil thickness is an important variable in determining the defect distribution. This additional spatial dimension allowed direct comparison between the model and experiments of defect structures. The defect loss to the surfaces in an irradiated thin foil was modeled successfully. TEM with in situ ion irradiation of Mo thin foils was also explicitly designed to compare with neutron irradiation data of the identical material that will be used to validate the model developed for thin foils.