Analysis of the current linearity at low illumination of high‐efficiency back‐junction back‐contact silicon solar cells

The relation between current and illumination intensity of three structures of high‐efficiency back‐junction back‐contact silicon solar cells was analyzed. Both, n‐type cells with non‐diffused front surface and p‐type cell with floating n‐emitter show a pronounced non‐linearity due to strong illumination dependence of the passivation quality of the non‐diffused surface and the floating junction respectively. Quantum efficiency (QE) of this cell type drops significantly for the illumination lower than 0.5 suns. In contrast the QE of n‐type cells with n⁺‐front surface field (FSF) is linear. Low illumination current characteristics of all three of the analyzed structures could be well described by physical models. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Fullerene solubility–current density relationship in polymer solar cells

During the last decade polymer solar cells have undergone a steady increase in overall device efficiency. To date, essential efficiency improvements of polymer–fullerene solar cells require the development of new materials. Whilst most research efforts aim at an improved or spectrally extended absorption of the donor polymer, not so much attention has been paid to the fullerene properties themselves. We have investigated a number of structurally related fullerenes, in order to study the relationship between chemical structure and resulting polymer–fullerene bulk heterojunction photovoltaic properties. Our study reveals a clear connection between the fullerene solubility as material property on one hand and the solar cells short circuit photocurrent on the other hand. The tendency of the less soluble fullerene derivates to aggregate was accounted for smaller current densities in the respective solar cells. Once a minimum solubility of approx. 25 mg/ml in chlorobenzene was overcome by the fullerene derivative, the short circuit current density reached a plateau, of about 8–10 mA/cm². Thus the solubility of the fullerene derivative directly influences the blend morphology and displays an important parameter for efficient polymer–fullerene bulk heterojunction solar cell operation. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

n‐type silicon solar cells with surface‐passivated screen‐printed aluminium‐alloyed rear emitter

Aluminium‐doped p‐type (Al‐p⁺) silicon emitters fabricated by means of a simple screen‐printing process are effectively passivated by plasma‐enhanced chemical‐vapour deposited amorphous silicon (a‐Si). We measure an emitter saturation current density of only 246 fA/cm², which is the lowest value achieved so far for a simple screen‐printed Al‐p⁺ emitter on silicon. In order to demonstrate the applicability of this easy‐to‐fabricate p⁺ emitter to high‐efficiency silicon solar cells, we implement our passivated p⁺ emitter into an n⁺np⁺ solar cell structure. An independently confirmed conversion efficiency of 19.7% is achieved using n‐type phosphorus‐doped Czochralski‐grown silicon as bulk material, clearly demonstrating the high‐efficiency potential of the newly developed a‐Si passivated Al‐p⁺ emitter. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Effective surface passivation of crystalline silicon using ultrathin Al2O3 films and Al2O3/SiNx stacks

We measure surface recombination velocities (SRVs) below 10 cm/s on p‐type crystalline silicon wafers passivated by atomic–layer–deposited (ALD) aluminium oxide (Al₂O₃) films of thickness ≥10 nm. For films thinner than 10 nm the SRV increases with decreasing Al₂O₃ thickness. For ultrathin Al₂O₃ layers of 3.6 nm we still attain a SRV < 22 cm/s on 1.5 Ω cm p‐Si and an exceptionally low SRV of 1.8 cm/s on high‐resistivity (200 Ω cm) p‐Si. Ultrathin Al₂O₃ films are particularly relevant for the implementation into solar cells, as the deposition rate of the ALD process is extremely low compared to the frequently used plasma‐enhanced chemical vapour deposition of silicon nitride (SiN_x). Our experiments on silicon wafers passivated with stacks composed of ultrathin Al₂O₃ and SiN_x show that a substantially improved thermal stability during high‐temperature firing at 830 °C is obtained for the Al₂O₃/SiN_x stacks compared to the single‐layer Al₂O₃ passivation. Al₂O₃/SiN_x stacks are hence ideally suited for the implementation into industrial‐type silicon solar cells where the metal contacts are made by screen‐printing and high‐temperature firing of metal pastes. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Flexible a‐Si:H/nc‐Si:H tandem thin film silicon solar cells on plastic substrates with i ‐layers made by hot‐wire CVD

In this letter we report the result of an a‐Si:H/nc‐Si:H tandem thin film silicon solar mini‐module fabricated on plastic foil containing intrinsic silicon layers made by hot‐wire CVD (efficiency 7.4%, monolithically series‐connected, aperture area 25 cm²). We used the Helianthos cell transfer process. The cells were first deposited on a temporary aluminum foil carrier, which allows the use of the optimal processing temperatures, and then transferred to a plastic foil. This letter reports the characteristics of the flexible solar cells obtained in this manner, and compares the results with those obtained on reference glass substrates. The research focus for implementation of the hot‐wire CVD technique for the roll‐to‐roll process is also discussed. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Microcrystalline silicon‐carbon alloys as anti‐reflection window layers in high efficiency thin film silicon solar cells

Microcrystalline silicon‐carbide (μc‐SiC:H) films were prepared using hot wire chemical vapor deposition at low substrate temperature. The μc‐SiC:H films were employed as window layers in microcrystalline silicon (μc‐Si:H) solar cells. The short‐circuit current density (J_SC) in these n‐side illuminated n–i–p cells increases with increasing the deposition time t_W of the μc‐SiC:H window layer from 5 min to 60 min. The enhanced J_SC is attributed to both the high transparency and an anti‐reflection effect of the μc‐SiC:H window layer. Using these favourable optical properties of the μc‐SiC:H window layer in μc‐Si:H solar cells, a J_SC value of 23.8 mA/cm² and cell efficiencies above 8.0% were achieved with an absorber layer thickness of 1 μm and a Ag back reflector. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Rectifying properties and photoresponse of CVD diamond p(i)n‐junctions

The current–voltage characteristics and photoresponse of mesa structured {111}‐oriented homoepitaxial CVD diamond p(i)n‐junctions with different intrinsic layer thickness are investigated. When a sufficiently thick intrinsic layer is present, a rectification ratio of 10⁸ at ±10 V could be obtained. Good rectifying diodes show a high photoresponse ratio between 210 nm (above bandgap) and 500 nm (below bandgap), making them suitable for UV detection purposes. The results are compared with similar measurements carried out on polycrystalline CVD diamond pn‐junctions.

     

A fullerene silirane derivative to improve the open circuit voltage in a polymer–fullerene solar cell: a theoretical study

In this letter quantum chemical calculations are performed on fullerene derivatives with varying reduction potentials, successfully used as electron acceptor in bulk heterojunction solar cells with the aim to investigate the energy levels of the frontier orbitals. We have successfully correlated the theoretical lowest unoccupied molecular orbital (LUMO) levels of different fullerenes with the open circuit voltage of the photovoltaic device based on the polymer–fullerene blend. We have also proposed a new fullerene silirane derivative with a raised LUMO level useful to increase the open circuit voltage of a polymer solar cell. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Decoupling crystalline volume fraction and VOC in microcrystalline silicon pin solar cells by using a µc‐Si:F:H intrinsic layer

Microcrystalline silicon thin film pin solar cells with a highly crystallized intrinsic μc‐Si:F:H absorber were prepared by RF‐plasma enhanced chemical vapour deposition using SiF₄ as the gas precursor. The cells were produced with a vacuum break between the doped layer and intrinsic layer depositions, and the effect of different subsequent interface treatment processes was studied. The use of an intrinsic μc‐Si:H p/i buffer layer before the first air break increased the short circuit current density from 22.3 mA/cm² to 24.7 mA/cm². However, the use of a hydrogen‐plasma treatment after both air breaks without an interface buffer layer improved both the open circuit voltage and the fill factor. Although the material used for the absorber layer showed a very high crystalline fraction and thus an increased spectral response at long wavelengths, an open‐circuit voltage (V_OC) of 0.523 V was nevertheless observed. Such a value of V_OC is higher than is typically obtained in devices that employ a highly crystallized absorber as reported in the literature (see abstract figure). Using a hydrogen‐plasma treatment, a single junction μc‐Si:F:H pin solar cell with an efficiency of 8.3% was achieved.

     

Transparent,flexible and low‐resistive precision fabric electrode for organic solar cells

We report the use of conducting precision fabrics as transparent and flexible electrode for organic semiconductor‐based thin film devices. Precision fabrics have well‐defined mesh openings, excellent flexibility and are fabricated by high‐throughput roll‐to‐roll manufacturing. Optimized fabrics reached light transmittance over 95% throughout the visible and near infrared spectra. A significant part of the transmitted light is scattered, which is particularly advantageous for solar cell applications. Surface resistivity is as low as ～3 Ohms/square, which decreases Ohmic losses when scaling up to large area devices. We demonstrate that solar cells fabricated onto these electrodes show very similar characteristics to those prepared on ITO. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Optical management in high‐efficiency thin‐film silicon micromorph solar cells with a silicon oxide based intermediate reflector

In the effort to increase the stable efficiency of thin film silicon micromorph solar cells, a silicon oxide based intermediate reflector (SOIR) layer is deposited in situ between the component cells of the tandem device. The effectiveness of the SOIR layer in increasing the photo‐carrier generation in the a‐Si:H top absorber is compared for p–i–n devices deposited on different rough, highly transparent, front ZnO layers. High haze and low doping level for the front ZnO strongly enhance the current density (J_sc) in the μc‐Si:H bottom cell whereas J_sc in the top cell is influenced by the angular distribution of the transmitted light and by the reflectivity of the SOIR related to different surface roughness. A total J_sc of 26.8 mA/cm² and an initial conversion efficiency of 12.6% are achieved for 1.2 cm² cells with top and bottom cell thicknesses of 300 nm and 3 μm, and without any anti‐reflective coating on the glass. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Calibrated numerical model of a GaInP–GaAs dual‐junction solar cell

In this letter a calibrated numerical model of a III–V dual‐junction solar cell including tunnel diode and Bragg reflector is presented. The quantum efficiencies of the subcells are computed by using the principle of current‐limitation in monolithic multi‐junction solar cells. A special procedure with bias‐illumination and bias‐voltage was implemented. Numerical simulations are used to study the influence of the top cell thickness on the cells' quantum efficiency and on the current‐matching condition. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Thermoelectric properties of p‐type Mg2Si0.6Ge0.4 fabricated by bulk mechanical alloying and hot pressing

Bulk mechanical alloying (BMA) followed by hot pressing (HP) was used to prepare Mg₂Si_0.6Ge_0.4 thermoelectric material with high densification. Starting from the elemental power mixture, the Mg₂Si_0.6Ge_0.4 solid solution was solid‐state synthesized via BMA. In fact, the peaks for the cubic‐structured Mg₂Si_0.6Ge_0.4 solid solution phase were detected after 300 cycles in BMA. The single phase of Mg₂Si_0.6Ge_0.4 was synthesized at 600 cycles in BMA. Mg₂Si_0.6Ge_0.4 showed p‐type semiconduction without doping. Effects of hot pressing conditions on thermoelectric properties were investigated. With increasing hot pressing temperature from 673 to 773 K and pressure from 500 MPa to 1 GPa, the electrical conductivity increased and the Seebeck coefficient decreased. The maximum figure of merit was obtained with the processing parameter of 600 cycles BMA and hot pressing at 773 K, 1 GPa for 1 h. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Application of multi-buffer layer of (Zn,Mg)O/CdS in Cu2ZnSn(S,Se)4 solar cells

(Zn,Mg)O (ZMO) buffer layer has attracted attention for having the potential to control the conduction band offset of buffer layer and large band-gap (Eg) Cu₂ZnSn(S,Se)₄ (CZTSSe) absorber interface, where the ZMO layer is deposited by the sputtering. However, the solar cell efficiency is decreased with the ZMO layer as compared with the CdS layer. The decrease in conversion efficiency is attributed to the sputtering damage on the absorber and high light reflection from the surfaces of CZTSSe solar cells. To completely suppress the damage, a CdS layer with very thin thickness of 20 nm is inserted between the ZMO layer and the CZTSSe layer. In addition, MgF₂ layers are deposited on CZTSSe solar cells as anti-reflection coating. Ultimately, the solar cell with multi-buffer layer of ZMO/thin-CdS is almost same level as that with the CdS layer. Therefore, the multi-buffer layer can be an appropriate buffer layer of the large-Eg CZTSSe layer.     

Increased open‐circuit voltage of ZnO nanowire/PbS quantum dot bulk heterojunction solar cells with solution‐deposited Mg(OH)2 interlayer

An ultrathin Mg(OH)₂ layer was solution‐deposited onto the ZnO nanowires to solve the problem of interfacial charge recombination, caused by the increase of interfacial area in bulk heterojunction (BHJ) PbS colloidal quantum dot solar cells (CQDSCs). This Mg(OH)₂ interlayer efficiently passivated the surface defects of ZnO nanowires and provided tunnel barrier at ZnO/PbS interface. As a result, the charge recombination at ZnO/PbS interface was largely suppressed, proved by the significantly elongated electron lifetime and the increased open‐circuit voltage of the Mg(OH)₂‐involved BHJ CQDSCs. Careful thickness optimization of Mg(OH)₂ interlayer finally brought a ～33% increase in V_oc and ～25% improvement in power conversion efficiency.     

Reversible magnetization and irreversibility line of tri-layer superconductor Ba2Ca2Cu3O6(O,F)2 with Tc∼108 K

We report magnetization measurements of grain-aligned Ba₂Ca₂Cu₃O₆(O,F)₂ with T_c?108 K. The interlayer distance of the material is the shortest among known tri-layer superconductors. Unexpectedly, the magnetization data show that the coupling strength between CuO₂ layers is rather weak. A direct reflection of the weak coupling is highly suppressed irreversibility line, i.e. a broad reversible region in H-T plane. The decoupling field obtained from the irreversibility line is less than 0.1 T, which is comparable with that of quasi two-dimensional superconductor Bi₂Sr₂CaCu₂O_8+δ. Comparison of data with the Hao-Clem model gives characteristic parameters [ξ_ab(0) and λ_ab(0)] and the critical fields [H_c(0) and H_c2^c(0)]. A large value of penetration depth, λ_ab(0)=240 nm reflects a small carrier concentration in CuO₂ planes, and explains the reason of the weak interlayer coupling.     

Influence of Ga/(Ga + In) grading on deep‐defect states of Cu(In,Ga)Se2 solar cells

The benefits of gallium (Ga) grading on Cu(In,Ga)Se₂ (CIGS) solar cell performance are demonstrated by comparing with ungraded CIGS cells. Using drive‐level capacitance profiling (DLCP) and admittance spectroscopy (AS) analyses, we show the influence of Ga grading on the spatial variation of deep defects, free‐carrier densities in the CIGS absorber, and their impact on the cell's open‐circuit voltage V_oc. The parameter most constraining the cell's V_oc is found to be the deep‐defect density close to the space charge region (SCR). In ungraded devices, high deep‐defect concentrations (4.2 × 10¹⁶cm^–3) were observed near the SCR, offering a source for Shockley–Read–Hall recombination, reducing the cell's V_oc. In graded devices, the deep‐defect densities near the SCR decreased by one order of magnitude (2.5 × 10¹⁵ cm^–3) for back surface graded devices, and almost two orders of magnitude (8.6 × 10¹⁴ cm^–3) for double surface graded devices, enhancing the cell's V_oc. In compositionally graded devices, the free‐carrier density in the absorber's bulk decreased in tandem with the ratio of gallium to gallium plus indium ratio GGI = Ga/(Ga + In), increasing the activation energy, hindering the ionization of the defect states at room temperature and enhancing their role as recombination centers within the energy band. (© 2015 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim)     

Optoelectrical improvement of ultra‐thin Cu(In,Ga)Se2 solar cells through microstructured MgF2 and Al2O3 back contact passivation layer

Decreasing the absorber layer thickness of thin‐film solar cells can be an effective solution for cost reduction of photovoltaic electricity generation. Unfortunately, this reduction leads to detrimental effects such as incomplete photon absorption and increased charge carrier recombination at the rear electrode. To tackle these losses in ultra‐thin 0.5 µm Cu(In,Ga)Se₂ (CIGS) solar cells, we developed different passivation structures made of MgF₂ and Al₂O₃ at the molybdenum–CIGS interface, leading to localized back contacts. The influence of the distance between those contacts on the cell performance was studied by varying the periodicity of the applied 1D patterns from 6 μm to 30 μm. Thus, an increase in performance was measured for microstructured layers with a periodicity of up to 12 µm. More precisely, a MgF₂ layer yielded an increase in power conversion efficiency (PCE) of up to 9%_rel compared to an unpassivated cell design, and a passivation layer comprising Al₂O₃ led to up to a 5%_rel increase in PCE. The gains were primarily attributed to an increased reflectivity of the back contact, while the formation of a negative backside field in the case of Al₂O₃ might have contributed to this increase by preventing electrons from recombining at the backside interface. Our findings indicate a high lateral conductivity for holes inside the multicrystalline CIGS compound over few tens of micrometres, which allows an independent design of future back contacts and light‐trapping schemes.

False‐colour scanning electron microscopy cross‐section picture of a passivated solar cell, with the front contact layers coloured in green, the 0.5 µm CIGS absorber in dark red, the MgF₂ passivation layer in blue, and the Mo back contact in grey.     

Efficiency enhancement of Cu(In,Ga)Se2 thin‐film solar cells by a post‐deposition treatment with potassium fluoride

Alkali‐free Cu(In,Ga)Se₂(CIGS) absorbers grown on Mo‐coated alumina (Al₂O₃) substrates were doped with potassium (K) after CIGS growth by a potassium fluoride (KF) post‐deposition treatment (PDT). The addition of K to the absorber leads to a strong increase in cell efficiency from 10.0% for the K‐free cell to 14.2% for the K‐doped cell, mainly driven by an increase in the open‐circuit voltage V_oc and the fill factor FF, and to an increase in the net charge carrier density. Hence K doping by KF‐PDT is comparable to doping with Na.