Chemical shifts of metallic and non-metallic Al–Re–Si approximant crystals studied by EELS and SXES

Chemical shifts of approximant crystals of 1/0-Al₁₂Re (1/0-metallic), 1/1-Al₇₃Re₁₅Si₁₂ (1/1-metallic) and 1/1-Al₇₃Re₁₇Si₁₀ (1/1-non-metallic) were examined by using electron energy-loss spectroscopy (EELS) and soft-X-ray emission spectroscopy (SXES). Al L-shell excitation EELS spectra of these alloys showed an apparent chemical shift only for the 1/1-non-metallic alloy to the larger binding energy side by 0.2?eV. Al-Kα, Re-Mα and Si-Kα emission SXES spectra also showed a shift to the larger binding energy side only for 1/1-non-metallic alloy. 1/0-metallic and 1/1-metallic alloys did not show any chemical shift in EELS and SXES experiments. Chemical shifts were observed only in larger binding energy side compared with pure materials. This implies the decrease of valence charge at constituent atomic sites of 1/1-non-metallic alloy compared with 1/0-metallic, 1/1-metallic and pure materials. The decreased charges should distribute intermetallic sites, which should be related to a formation of covalent bonding among Al atomic sites reported by maximum-entropy method (MEM)/Rietveld analysis on this material. This relation between chemical shift and covalent bonding nature of this approximant alloy may support the presence of covalent bonding in Al-based quasicrystals.     

Effective charge in the II–VI and III–V compounds with zincblende or wurtzite type structure

The effective charge in the II–VI and III–V compounds was analyzed by using a linear chain model. On the assumption that the ionic lattice is immersed in a cloud of valence electrons with the dielectric constant of ?(∞) = n²?₀ (n: refractive index, ?₀ = 8·85 × 10^?12f/m), the effective charge on an ion is equal to 2e in the II–VI compounds and to e in the III–V compounds (e: electronic charge), respectively. These values of the effective charge are just n times the Szigeti charge.Although direct connection between neighboring atoms is the main part of the binding force, the fact can not be neglected that the second nearest neighbor atoms are connected by sharing some of valence electrons between them. The electrons in valence bonds contribute to the refractive index and are estimated to be e and 2e per atom in the II–VI and III–V compounds, respectively.     

Electronic structures of Al–Si clusters and the magic number structure Al8Si4

The low-energy structures of Al₈Si_m (m = 1–6) have been determined by using the genetic algorithm combined with density functional theory and the Second-order Moller-Plesset perturbation theory (MP2) models. The results show that the close-packed structures are preferable in energy for Al–Si clusters and in most cases there exist a few isomers with close energies. The valence molecular orbitals, the orbital level structures and the electron localisation function (ELF) consistently demonstrate that the electronic structures of Al–Si clusters can be described by the jellium model. Al₈Si₄ corresponds to a magic number structure with pronounced stability and large energy gap; the 40 valence electrons form closed 1S²1P⁶1D¹⁰2S²1F¹⁴2P⁶ shells. The ELF attractors also suggest weak covalent Si–Si, Si–Al and Al–Al bonding, and doping Si in aluminium clusters promotes the covalent interaction between Al atoms.     

Characteristic chemical shift of quasicrystalline alloy Al53Si27Mn20 studied by EELS and SXES

Chemical shifts of all constituent atoms for amorphous (Am), quasicrystalline (QC) and crystalline (Cryst) alloys of Al₅₃Si₂₇Mn₂₀ were investigated for the first time by high energy-resolution electron energy-loss spectroscopy (EELS) and soft-X-ray emission spectroscopy (SXES). Among Al L-shell excitation EELS spectra of Am, QC and Cryst alloys, only QC alloy showed an apparent chemical shift to the larger binding energy side by 0.4?eV. In Al-K_α and Si-K_α emission SXES spectra of these alloys, only QC alloy showed a chemical shift to the larger binding energy side by 4?eV for Al-K_α and 6?eV for Si-K_α. These chemical shift values are comparable to those of corresponding metal oxides. This indicates a smaller amount of valence charge at Al and Si atomic sites in QC alloy. On the other hand, Mn-L SXES spectra did not show any chemical shift. Therefore, the decreased charge from Al and Si sites should be distributed between atomic sites, indicating the presence of covalent bonding nature for QC ordered alloy.     

Basics of NMR line shape in quasicrystals

The measurement and analysis of broad nuclear magnetic resonance (NMR) spectra of quasicrystals require experimental methods and theoretical interpretations different from NMR investigations of regular periodic crystals. Frequency- and field-sweep methods for recording quasicrystalline NMR spectra are described and compared with the measurement of²⁷Al NMR spectra of icosahedral AlPdMn and decagonal AlNiCo quasicrystals. The nuclear spin interactions that determine the NMR line shape are the same for both types of the above Al-based quasicrystals, where the electric quadrupolar interaction with the broad distribution of its electric field gradient parameters predominantly determines the shape of the broad satellite “background” intensity. The essential observations are an almost isotropic²⁷Al NMR spectrum of the icosahedral quasicrystals and a strong angular dependence of the spectrum of decagonal quasicrystals.     

Direct Detection of Al–O–Al Structure in Aluminosilicate Specimens: A Use of Homo-Nuclear DQMAS NMR

A general strategy of Al–O–Al structure in various aluminosilicate was evaluated by combining triple-quantum magic angle spinning (3QMAS) and double-quantum homo-nuclear correlation under magic angle spinning (DQMAS) solid-state nuclear magnetic resonance (NMR) measurements with the aid of high magnetic field NMR (800 MHz for ¹H Larmor frequency). The results show that in many cases the direct detection of Al–O–Al sites in aluminosilicate crystals and glasses is possible; hence the extent of aluminum avoidance can be directly elucidated. Specifically, experimental evidence of Al–O–Al linkages in several aluminosilicate materials with Si/Al >1 was straightforwardly confirmed; and the existence of Al–O–Al is considered to have little correlation with the Si/Al ratio, but it may be strongly related to the cation and local structural arrangement. In addition, the presence of tri-clusters of (Si, Al)O₄-tetrahedra in aluminosilicate framework was proposed, which was thought to act as nuclei for formation and incorporation of cations to achieve charge neutrality.     

The electronic structures of the core and valence ion states of metal oxides

SCF-Xα SW MO calculations on metal core ion hole states and X-ray emission (XES) and X-ray photoelectron (XPS) transition states of the non- transition metal oxidic clusters MgO₆^10?, AlO₄^5? and SiO₄^4? show relative valence orbital energies to be virtually unaffected by the creation of valence orbital or metal core orbital holes. Accordingly, valence orbital energies derived from XPS and XES are directly comparable and may be correlated to generate empirical MO diagrams. In addition, charge relaxation about the metal core hole is small and valence orbital compositions are little changed in the core hole state. On the other hand, for the transition metal oxidic clusters FeO₆^10?, CrO₆^9? and TiO₆^8? relative valence orbital energies are sharply changed by a metal core orbital or crystal field orbital hole, the energy lowering of an orbital increasing with its degree of metal character. Consequently O 2p nonbonding → M 3d-O 2p antibonding (crystal field) energies are reduced, while M 3d bonding → O 2p nonbonding and M 3d-O 2p antibonding → M 4s,p-O 2p antibonding (conduction band) energies increase. Charge relaxation about the core hole is virtually complete in the transition metal oxides and substantial changes are observed in the composition of those valence orbitals with appreciable M 3d character. This change in composition is greater for e _g than for t_2g orbitals and increases as the separation of the e_g crystal field (CF) orbitals and the O 2p nonbonding orbital set decreases. Based on the hole state MO diagrams the higher energy XPS satellite in TiO₂ (at about 13 eV) is assigned to a valence → conduction band transition. The UV PES satellites at 8.2 eV in Cr₂O₃ and 9.3 eV in FeO are tentatively assigned to similar transitions to conduction band orbitals, although the closeness in energy of the crystal field and O 2p nonbonding orbitals in the valence orbital hole state prevents a definite assignment on energy criteria alone. However the calculations do clearly show that charge transfer transitions of the e_g bonding → e_g crystal field orbital type would generally occur at lower energy than is consistent with observed satellite structure.A core electron hole has little effect upon relative orbital energies and is only slightly neutralized by valence electron redistribution for MgO and SiO₂. For the transition metal oxides a core hole lowers the relative energies of M3d containing orbitals by large amounts, reducing O → M charge transfer and increasing M 3d crystal field → conduction band energies. Large and sometimes overcomplete neutralization of the core hole is observed, increasing from CrO₆^9? to FeO₆^10? to TiO₆^8?. as the O → M charge transfer energy declines.High energy XPS satellites in TiO₂ may be assigned to O 2p nonbonding → conduction band transitions while lower energy UV PES satellites in FeO and Cr₂O₃ arise from crystal field or O 2p nonbonding → conduction band excitations. Our “shake-up” assignment for FeO₆^10?, CrO₆^9? and TiO₆^8? are less than definitive because no procedure has yet been developed to calculate “shake-up” intensities resulting from transitions of the type described. However the results do allow a critical evaluation of earlier qualitative predictions of core and valence hole effects. First, we find that the comparison of hole or valence state ionic systems with equilibrium distance systems of higher nuclear and/or cation charge (e.g. the comparison of the FeO₆^10? Fe 2p core hole state to Co₃O₄) is dangerous. For example, larger MO distances in the ion states substantially reduce crystal field splittings. Second, core and CF orbital holes sharply reduce O → M charge transfer energies, giving 2e_g → 3e_g energy separations which are generally too small to match observed satellite energies. Third, highest occupied CF-conduction band energies are only about 4–5 eV in the ground states, but increase to about 7–11 eV in the core and valence hole states of the transition metal oxides studied. The energetic arguments presented thus support the idea of CF and/or O 2p nonbonding → conduction band excitations as assignments for “shake-up” satellites, at least in oxides of metals near the beginning of the transition series.     

Electrical conductivity response and sensitivity of ZSM-5, Y,and mordenite zeolites towards ethanol vapor

This work is an attempt to search for highly selective sensing materials for ethanol vapor. The electrical conductivity response of ZSM-5, Y, and mordenite zeolites towards ethanol vapor have been investigated for the effects of the framework, the charge balancing cation type, and the Si/Al ratio. All zeolites were characterized using XRD, FT-IR, SEM, TGA, BET, and NH₃-TPD techniques. For the effect of the zeolite framework type, H⁺Y has a higher electrical conductivity sensitivity value than that of H⁺MOR because of a greater pore volume and available surface area. For the effect of the charge balancing cation, all NH₄ ⁺ZSM-5 zeolites (Si/Al = 23, 50, 80, 280) show negative responses, whereas the H⁺Y zeolites (Si/Al = 30, 60, 80) and the H⁺MOR zeolites (Si/Al = 30, 200) show positive responses. These differing behaviors can be traced to the electrostatic field at the cation sites in zeolite micropores, and their hydrophilic–hydrophobic character, which affect the adsorption properties of the zeolites. For the effect of Si/Al ratio, the electrical conductivity sensitivity towards the ethanol decreases with increasing Si/Al ratio or decreasing Al content, and there is a lesser degree of interaction between ethanol molecules and the active sites of the zeolites due to its higher hydrophobicity and the lower amount of cations. However, the H⁺Y (Si/Al = 5.1) and the H⁺MOR (Si/Al = 19) zeolites have lower conductivity sensitivity than those of H⁺Y (Si/Al = 30) and H⁺MOR (Si/Al = 30), respectively. The interactions between the C₂H₅OH molecules and the zeolites with respect to the electrical conductivity sensitivity were investigated and verified through infrared spectroscopy.     

Adsorption of carbon monoxide on Si x Ge4– x (x = 0–4) nano-clusters: a hybrid meta density functional study

Theoretical study of carbon monoxide adsorption on Si _x Ge_{4 ? x} (x = 0–4) nano-clusters has been carried out using advanced hybrid meta density functional method of Truhlar (MPW1B95). MG3 semi-diffuse (MG3S) and correlation consistent valence basis sets with relativistic core potential were employed to improve the results. The agreement of the calculated ionization and dissociation energies with experimental values validates the reported structures of nano-clusters and justifies the use of hybrid meta density functional method. The geometry, adsorption energy, charge distribution, and vibrational frequency of CO adsorption on all possible structures were investigated. The maximum vibrational frequency changes occur in the bridge structures while the most stable structures occur when CO adsorbs on one silicon atom in a flat surface. The changes of spin densities arising through bridged structures with higher spin multiplicities were rationalized. Adsorption energies of CO on one Si atom are by far more negative than the corresponding value for on Ge atom, at the highest being nearly ?77 and ?35 kJ mol^?1. Comparison was made of adsorbed CO bridging neighbouring and diagonal Si atoms and the former was more stable, having adsorption energy of nearly ?77 kJ mol^?1. Flat surfaces adsorb CO more favourably. Exhaustive vibrational frequency analyses were performed to confirm the local minima energy of all optimized structures.     

Hume-Rothery electron concentration rule across a whole solid solution range in a series of gamma-brasses in Cu–Zn,Cu–Cd,Cu–Al,Cu–Ga,Ni–Zn and Co–Zn alloy systems

The aim of the present work is to examine if the Hume-Rothery stabilisation mechanism holds across whole solid solution ranges in a series of gamma-brasses with especial attention to the role of vacancies introduced into the large unit cell. The concentration dependence of the number of atoms in the unit cell, N, for gamma-brasses in the Cu–Zn, Cu–Cd, Cu–Al, Cu–Ga, Ni–Zn and Co–Zn alloy systems was determined by measuring the density and lattice constants at room temperature. The number of itinerant electrons in the unit cell, e/uc, is evaluated by taking a product of N and the number of itinerant electrons per atom, e/a, for the transition metal element deduced earlier from the full-potential linearised augmented plane wave (FLAPW)-Fourier analysis. The results are discussed within the rigid-band model using as a host the density of states (DOS) derived earlier from the FLAPW band calculations for the stoichiometric gamma-brasses Cu₅Zn₈, Cu₉Al₄ and TM₂Zn₁₁ (TM = Co and Ni). A solid solution range of gamma-brasses in Cu–Zn, Cu–Cd, Cu–Al, Cu–Ga and Ni–Zn alloy systems is found to fall inside the existing pseudogap at the Fermi level. This is taken as confirmation of the validity of the Hume-Rothery stability mechanism for a whole solute concentration range of these gamma-brasses. An exception to this behaviour was found in the Co–Zn gamma-brasses, where orbital hybridisation effects are claimed to play a crucial role in stabilisation.     

Theoretical and experimental investigation on structural and electronic properties of Al/O/Al,O-doped WS2

Effects of the doping atom (O, Al, and (Al, O)) on structural and electronic properties of the monolayer WS₂ have been studied by using first-principles calculations. Results show that the covalent character of W–S bonding has been enhanced after doping. Meanwhile, W–O, Al–S and W–S bonds of (Al, O) co-doped WS₂ monolayer have higher covalent character compared with O-doped and Al-doped WS₂ monolayer of this work. After doping with Al (or Al, O) atoms, Fermi level moves close to the valence band and the dopant atoms produce the defect energy levels, indicating that Al doped and (Al, O) co-doped WS₂ monolayer both have p-type conductivity. O-doped and (Al, O) co-doped WS₂ ultrathin films was prepared on Si substrates. Results of Raman spectra show the formation of the O-doped and (Al, O) co-doped WS₂ films. Moreover, compared with the pure WS₂, the approximate reduction of 0.43 eV and 0.46 eV for W 4f and S 2p in binding energy after (Al, O) co-doped shows that p-type doping of (Al, O) co-doped WS₂ has been verified.     

Nuclear charge radii of Al and Si from elastic electron scattering between 25 and 60 MeV

Elastic electron scattering cross sections of²⁷Al and Si (natural isotopic mixture) have been measured relative to carbon. The rms charge radiiR _m , deduced with partial wave calculations, are (3.01±0.05) fm for²⁷Al and (3.06±0.05) fm for Si, in good agreement with results from muonic X-ray energies. The values given are those for a Fermi charge distribution with skin thickness 2.5 fm; harmonic oscillator shell model distributions yield radii smaller by 0.03 fm. The ratioR _m (²⁷Al)/R_m(Si) is 0.984±0.016.     

First principles theory of hyperfine interactions in spinels: ZnAl2O4

The nuclear quadrupole interactions of²⁷Al and⁶⁷Zn, both at the B-site in the spinel ZnAl₂O₄ have been studied using the Hartree-Fock cluster procedure including the influence of the ions outside the cluster. The theoretical value –3.85 MHz ofe ² qQ for²⁷Al is in very good a agreement with the experimental value of 3.68 MHz (sign undetermined). For⁶⁷Zn at the Al site the theoretical value is –8.26 MHz in reasonable agreement with the experimental value of –11.34 MHz indicating that lattice distortion effects associated with Zn as an impurity at the Al site are relatively small.     

Work function, valence band and secondary ion intensity variations noted during the initial stages of SIMS depth profiling of Si and SiO2 by Cs

Work function, valence band and ²⁸Si⁻ secondary ion intensity variations from various Si substrates sputtered by 1 keV Cs⁺ at 60° were measured. Oxide free Si wafers and native oxide terminated wafers did not reveal any appreciable valence band variations close to the Fermi edge. Their work functions however, decreased substantially with an exponential trend noted between this and Si⁻ secondary ion intensities from the O free Si wafer. This is consistent with the electron tunneling model which assumes a resonance charge transfer process. Native oxide terminated wafers exhibited deviations from this exponential trend, while Si wafers with thicker oxides revealed the growth of sub-band features in the valence band spectra on sputtering with Cs⁺. These features, may partially, if not fully, explain the Cs⁺ induced enhancement effect noted on SiO₂ substrates where work function based models are not applicable.     

Electronic and structural properties of Ti9XO20 (X=Ti,C, si,Ge, Sn and pb) clusters: A DFT study

The electronic and structural properties of Ti₉XO₂₀ (X=Ti, C, Si, Ge, Sn and Pb) clusters have been obtained in the density functional theory (DFT) framework. The changes in the bond length, binding energy, frontier orbitals, and electronic potential have been fully analyzed when one titanium atom in the (TiO₂)₁₀ cluster is replaced by elements with four valence electrons. When one titanium atom is substituted by one carbon atom, a charge excess among the guest and the surrounding oxygen atoms is generated, which is approximately 1.5 times that of the pristine case, and this structure has been shown to be the most stable among the studied systems. In addition, the Ti₁₀O₂₀–Cd₂ and Ti₉CO₂₀–Cd₂ clusters exhibit HOMO–LUMO gaps that have decreased by 0.58 and 2.12 eV, respectively, with respect to the bare cases.     

Low-temperature nuclear orientation of173Lu,175Hf,178Ta and182m,183,184,186Re in Re

Quadrupole-interaction nuclear-orientation experiments were performed on dilute samples of the Group IIIb and IVb impurities¹⁷³Lu and¹⁷⁵Hf in a (Group VIIb) Re single crystal, the samples being preparedin situ by irradiation of a Re single crystal with 172.5 MeV alpha particles. From the γ-anisotropies at temperatures down to 8mk the quadrupole interaction frequencies Ν_Q=e²qQ/h of¹⁷³LuRe and¹⁷⁵HfRe were determined to be ?1149 (100) and ?540 (43) MHz, respectively. The negative sign in both cases indicates that the direction of the electric field gradient (EFG) at the impurity sites is fixed uniquely by the properties of the host lattice. The absolute magnitudes of these EFG's differ strongly from that of the pure system ReRe; the electronic contribution to the EFG of different impurities in Re decreases with increasing impurity valence, contrary to the expectation. As a byproduct, the quadrupole splittings of¹⁷⁸Ta,^{182m, 183, 184, 186}Re in Re were measured to be ?103(10), ?502(30), ?281(20), ?340(22) and ?73(7) MHz.     

A basis for the synthesis of quasicrystals

It has been established that quasicrystals with icosahedral point group symmetry occur in a rapidly solidified Mg₃₂ (Al, Zn)₄₉ alloy chosen on the basis of its equilibrium crystal structure. This alloy has a natural tendency to form icosahedral atomic clusters stabilised by size difference amongst constituent atoms. Results highlight the relationship between equilibrium crystal structure and the tendency to form quasicrystals.     

Research on Si-Al based catalysts prepared by complete liquid-phase method for DME synthesis in a slurry reactor

A series of Si-Al based DME synthesis catalysts were prepared by complete liquid-phase method and characterized by in situ XPS, XRD, N₂ adsorption and NH₃-TPD analyses. Based on the results, the addition of Si could adjust the pore structure and surface acidity of catalyst, exhibiting a strong promoting effect on the CO conversion and DME selectivity. However, when Si/Al ratio is higher, Si would cover active sites and increase the amount of strong acidity sites, causing the reduction in catalytic activity. It was found from in situ XPS characterization that Cu⁰ is the active center of methanol synthesis in DME production, and the addition of Si changes the chemical surroundings of active components and weaken the interaction between Cu, Zn and Al, which maybe give rise to the decrease in catalyst stability.     

Evaluation of structural vacancies for 1/1-Al–Re–Si approximant crystals by positron annihilation spectroscopy

The size of structural vacancies and structural vacancy density of 1/1-Al–Re–Si approximant crystals with different Re compositions were evaluated by positron annihilation lifetime and Doppler broadening measurements. Incident positrons were found to be trapped at the monovacancy-size open space surrounded by Al atoms. From a previous analysis using the maximum entropy method and Rietveld method, such an open space is shown to correspond to the centre of Al icosahedral clusters, which locates at the vertex and body centre. The structural vacancy density of non-metallic Al₇₃Re₁₇Si₁₀ was larger than that of metallic Al₇₃Re₁₅Si₁₂. The observed difference in the structural vacancy density reflects that in bonding nature and may explain that in the physical properties of the two samples.     

Growth,electronic and magnetic properties of doped ZnO epitaxial and nanocrystalline films

We have used oxygen plasma assisted metal organic chemical vapor deposition along with wet chemical synthesis and spin coating to prepare Co_xZn_1-xO and Mn_xZn_1-xO epitaxial and nanoparticle films. Co(II) and Mn(II) substitute for Zn(II) in the wurtzite lattice in materials synthesized by both methods. Room-temperature ferromagnetism in epitaxial Co:ZnO films can be reversibly activated by diffusing in Zn, which occupies interstitial sites and makes the material n-type. O-capped Co:ZnO nanoparticles, which are paramagnetic as grown, become ferromagnetic upon being spin coated in air at elevated temperature. Likewise, spin-coated N-capped Mn:ZnO nanoparticle films also exhibit room-temperature ferromagnetism. However, the inverse systems, N-capped Co:ZnO and O-capped Mn:ZnO, are entirely paramagnetic when spin coated into films in the same way. Analysis of optical absorption spectra reveals that the resonances Co(I)↔Co(II)+e^- _CB and Mn(III)↔Mn(II)+h⁺ _VB are energetically favorable, consistent with strong hybridization of Co (Mn) with the conduction (valence) band of ZnO. In contrast, the resonances Mn(I)↔Mn(II)+e^- _CB and Co(III)↔Co(II)+h⁺ _VB are not energetically favorable. These results strongly suggest that the observed ferromagnetism in Co:ZnO (Mn:ZnO) is mediated by electrons (holes). PACS 75.50.Pp