Secondary ion emission under the bombardment of Si by multiply charged Si q+ ions

The spectra of secondary ion emission under the bombardment of a B-doped Si target by multiply charged Si ^q+ ions (q = 1?C5) have been studied in the energy range of 1 to 10 keV per unit of charge. A multifold increase in the yield of secondary cluster Sk _n ⁺ ions, multiply charged Si ^q/+ ion (q = 1?C3), and H⁺, C⁺, B⁺, Si₂N⁺, Si₂O⁺ is observed as the charge of the multiply charged ions increases. The increase in the yield of secondary ions with increasing charge of the multiply charged-ion charge is most significant for ions with relatively high ionization potentials.     

Absolute emission cross sections for detection of plasma impurity ions with active neutral lithium beam diagnostics

For detection of impurity ions in magnetically confined plasmas by means of active neutral Li beam diagnostics emission cross sections for electron capture by C^q+ (q = 3, 4, 5, 6) and O^q+ (q = 4, 5, 6, 7) ions have been measured. The ion impact energies correspond to injection of ⁷Li (2s) with 20 and 30 KeV respectively.     

高电荷态离子与Si(110)晶面碰撞的沟道效应研究

不同电荷态低速离子(Ar^q+,Pb^q+)轰击Si(110)晶面,测量不同入射角情况下的次级粒子的产额. 通过比较溅射产额与入射角的关系,证实沟道效应的存在. 高电荷态离子与Si相互作用产生的沟道效应说明溅射产额主要是由动能碰撞引起的. 在小角入射条件下,高电荷态离子能够增大溅射产额. 当高电荷态离子以40°—50°入射时,存在势能越高溅射产额越大的势能效应. 关键词： 高电荷态离子 溅射 沟道效应     

Retrieval of currents of multiply charged ions emitted from laser-produced carbon plasma

The emission of ions from laser-produced carbon plasmas is investigated by a deconvolution of ion collector signals. The deconvolution is based on the use of Kelly and Dreyfus function expressing the time-resolved ion current to recover hidden peaks in an ion collector signal. The parameters of recovered C ^q+ (1?≤?q?≤?6) currents make possible the quantification of properties of laser-produced plasmas. The drift and peak velocities of C ^q+ ions, the abundance of ions and the plasma temperature are presented in the dependence on focused laser beam energy. The carbon plasma was generated employing either single 9-ns pulses of second harmonics (532 nm) of Nd:YAG laser or pulses repeated at a stable repetition rate of 30 Hz.     

Secondary ion emission from Si under nitrogen ion bombardment

The yield and energy distribution of positive secondary ions emitted from Si under N₂⁺ ion bombardment were measured. The obtained mass peaks correspond to three types of secondary ion species, that is, physically sputtered ions (Si⁺, Si₂⁺), chemically sputtered ions (SiN⁺ Si₂N⁺) and doubly charged ions (Si²⁺). The dependence of secondary ion emission on the primary ion energy was studied in a range of 2.0–20.0 keV. The yields of physically and chemically sputtered ions were almost independent of the primary ion energy. The yield of the doubly charged ion strongly depended on the primary ion energy. The energy distribution of secondary ions of the three types showed the same dependence on the primary ion energy. The most probable energy of the distribution increased with the primary ion energy. On the other hand, for the energy distribution curves of sputtered ions, the tail factors N in E^?N were constant and showed a m/e dependence.     

Multiple ionization and the charge state evolution of ions exposed to electron impact

Charge state abundances of atoms exposed to an electron flux for a time t are calculated from experimental cross sections by considering either electron impact single ionization only or by including multiple ionization. When multiple ionization is neglected Xe^q+ ion abundances (q = 0,1,…,6) for an electron energy of 700 eV are off by a factor of up to 2 both in peak size and in time necessary to reach the peak value.     

Effect of M+2 ions on the luminescence of Pb+2 in NaCl

The effect of additional doping with M⁺² ions on the luminescence of NaCl:Pb⁺² has been systematically investigated. The data show that the same two emissions at 310 and 380 nm are observed for mixed Pb⁺²-M⁺² clusters as for Pb⁺² aggregates. Moreover, the presence of a M⁺² ion associated to a Pb⁺² ion in a mixed cluster shifts the 310 nm emission (predominantly observed for free Pb⁺²-vacancy dipoles) to 380 nm. The results are consistent with the Fukuda's model, involving an emission at 310 nm from tetragonal (T) minima in the adiabatic potential energy surface (APES) and another one from less symmetry (X) minima at 380 nm. The data for NaCl:Pb⁺²:Mn⁺², show that an excitation transfer is taking place from the X minima of the ³T_1u state of Pb⁺² to Mn⁺².     

Charge state effect on K-shell ionization of aluminum by 600–3400 keV xenonq+ (12 < q < 29) ion collisions

K-shell X-ray spectra of Al were measured by the interaction of 600–3400 keV Xe ^q+ (q = 12–29) ions with Al surface. The X-ray yields per incident ion were deduced and the K-shell ionization cross-sections were obtained from the experimental yield data. With the same incident energy, the K-shell ionization cross-sections of Al excited by Xe ^q+ (q < 26) ions were of the same order of magnitude, while for q = 26 and 29 Xe ion collisions, they were, respectively, about two and ten times larger. Taking into account the binding-energy-modification and the recoil effect of target atoms, the binary encounter approximation (BEA) theory was consistent with the experimental data for q < 26 Xe ion collisions, but it underestimated those excited by q = 26 and 29 Xe ions. This indicates that the K-shell ionization of target induced by Xe ^q+(q < 26) ions was mainly due to the direct Coulomb excitation. However for q = 26 and 29 Xe ions collisions, the transfer of 3d vacancies of projectile to the 1s orbital of target via rotational coupling of the 3dπ, δ-3dσ molecular orbitals, which were formed in the ion-atom quasi-molecule, may cause a considerable contribution to the enhancement of ionization. In addition to the well known Auger and X-ray transition, our experiments proved that the molecular orbital transition (“side-feeding”) mechanism is also a significant channel for de-excitation of hollow atoms formed below the surface.     

On the energy spectra of secondary ions emitted from silicon and graphite single crystals

Secondary ion emission from silicon and graphite single crystals bombarded by argon ions with energies E ₀ varied from 1 to 10 keV at various angles of incidence α has been studied. The evolution of the energy spectra of C⁺ and Si⁺ secondary ions has been traced in which the positions of maxima (E _max) shift toward higher secondary-ion energies E ₁ with increasing polar emission angle θ (measured from the normal to the sample surface). The opposite trend has been observed for ions emitted from single crystals heated to several hundred degrees Centigrade; the E _max values initially remain unchanged and then shift toward lower energies E ₁ with increasing angle θ. It is established that the magnitude and position of a peak in the energy spectrum of secondary C⁺ ions is virtually independent of E ₀, angle α, and the surface relief of the sample (in the E ₀ and α intervals studied). Unusual oscillating energy distributions are discussed, which have been observed for secondary ions emitted from silicon (111) and layered graphite (0001) faces. Numerical simulations of secondary ion sputtering and charge exchange have been performed. A comparison of the measured and calculated data for graphite crystals has shown that C⁺ ions are formed as a result of charge exchange between secondary ions and bombarding Ar⁺ ions, which takes place both outside and inside the target. This substantially differs from the ion sputtering process in metals and must be taken into account when analyzing secondary ion emission mechanisms and in practical applications of secondary-ion mass spectrometry.     

Gamow-Teller strength and giant resonances in 90Zr(n,p) at 198 MeV

The ⁹⁰Zr(n,p)⁹⁰Y reaction has been studied at a bombarding energy of 198 MeV in a search of GT⁺ strength. Up to 10 MeV excitation in ⁹⁰Y, we obtain a firm upper limit of S_β⁺ ⩽ 3.6. The majority of the strength at low excitations is identified as spin dipole.     

Magnetic-field and temperature effects on the optical properties of dicyano-2,2′-bipyridyl-platinum(II) single crystals

Studies of the polarized emission of [Pt(CN)₂(bipy)] single crystals as function of temperature (1.9 K ⩽ T ⩽ 295 K) and homogeneous magnetic fields (0 ⩽ H ⩽ 6 T), and the temperature dependence of the polarized absorption spectrum are reported. Raising the temperature from 1.9 to 7 K or increasing the magnetic field from 0 to 1 T results in a blue shift of ≈175 cm^-1 in the E ⊥ a polarized emission (E: electric field vector, a: crystallographic a axis). Between 1.9 and 295 K at H = 0) and between 0 and 6 T (at T = 1.9 K), the emission lifetime decreases by factors of ≈10³ and ≈10², respectively. The results are explained within the C'_2v symmetry of the single complex assuming a coupling between neighboring central ions.     

Influence of the magnetic phase transition on secondary ion emission from disordered Ni-Pd compounds of various compositions

Variations in secondary ion emission (SIE) from polycrystals of ferromagnetic disordered Ni-Pd compounds irradiated by argon ions with energy of 10 keV are studied experimentally. A considerable reduction in Ni⁺ and Pd⁺ ion emission upon transitioning from the ferromagnetic to the paramagnetic state is revealed for the following Ni-Pd compounds with various Curie points T _C: NiPd (T _C = 190°C), Ni₅Pd (T _C = 315°C), and NiPd₅ (T _C = 110°C). The observed reduction in SIE is attributed to variations in the surface binding energy and the density of electron states near the Fermi level.     

Nano-crater formation on a Si(1 1 1)-(7 × 7) surface by slow highly charged ion-impact

Using scanning tunneling microscopy (STM) and time of flight secondary ion mass spectrometry (TOF/SIMS), we observed radiation effects on a Si(1 1 1)-(7 × 7) surface in the collision of a single highly charged ion (HCI) with a charge state q up to q = 50. The STM observation with atomic resolution revealed that a nanometer sized crater-like structure was created by a single HCI impact, where the size increased rapidly with q. The secondary ion yields also increased with q in which multiply charged Si ions (Siⁿ⁺) were clearly observed in higher q HCI-collisions. The sputtering mechanism is briefly discussed, based on the so-called Coulomb explosion model.     

Some characteristics in the interaction of slow highly charged I ions with a Si(1 1 1) 1 × 1-H surface

We have observed secondary particles and photons emitted from hydrogen terminated Si(1 1 1) 1 × 1 surfaces in the interactions with highly charged ions (HCIs) of iodine having a wide range of charge state, q, from I¹⁷⁺ up to I⁵³⁺, fully stripped iodine ion. A TOF-SIMS (time-of-flight secondary ion mass spectrometry) apparatus has been used to investigate secondary emissions where protons are dominant signals in the TOF spectra. Measured yields of H⁺ and show strong q-dependences, proportional to q^3.4 and q⁵, respectively. For Si⁺, while the yield remains constant for q < ∼ 25, it begins increasing with q^1.4 at higher q (∼25). The mechanism of secondary emissions is briefly discussed.     

Secondary-ion emission from clean and oxygen-covered beryllium surfaces: II. Energy dependence

The secondary-ion energy distribution obtained by sputtering clean and oxygen-covered Be has been analyzed in terms of competing processes in secondary ion emission. The ion energy distribution N⁺(E) has been separated into an ionization coefficient R⁺(E) and a total energy distribution, N(E), i.e. N⁺(E) = R⁺(E) N(E). Experimentally, the dependence of R⁺(E) on both energy and oxygen coverage indicated a linear superposition of adiabatic tunneling and resonanance ionization processes from clean and oxygen-covered portions of the surface with no contributions to the secondary-ion yield from regions of intermediate coverage. Total energy distributions of sputtered Be atoms have been deduced and the principal features agree with the predictions of the collision cascade sputtering model. Variations of the energy distributions with oxygen coverage are in accord with small changes expected in the surface binding energy as a result of surface oxidation.     

Electron yield per ion charge-state correction for an ion collector with unsuppressed secondary electron emission

The electron yield per ion charge-state γ/q was measured for emission of electrons from clean polycrystalline gold induced due to impact of Ta ^q+ (11≤q≤41) ions with kinetic energy per chargeE _i/q from 15 keV/q to 150 keV/q. The dependence of γ on angle of incidence was analyzed with use of relation γ(ϑ)=γ₀ cos^−f ϑ. The fitting of experimental data gives a range of γ₀/q from 1 to 1.75 for Ta¹³⁺ and from 1.5 to 1.73 for Ta³⁹⁺. The dependence of γ₀/q onq andE _i is discussed with respect to measurement of ion currents emitted from laser-produced plasmas with an ion collector with unsuppressed secondary electron emission. This work was supported by the Division of Chemical Sciences, Office of Basic Energy Sciences, Office of Energy Research, U.S. Department of Energy, and by grant A1010819 from the Grant Agency of the Academy of Sciences of the Czech Republic.     

Cross sections for alpha particles colliding with oxygen ions: Loss of alpha heating in Tokamak plasmas

The classical-trajectory Monte-Carlo method has been used to calculate the electron capture and impact ionization cross sections for alpha particles (He⁺⁺) colliding with O^+q (q = 3,4,5) in the energy range 0.25 to $\text{1.0 MeV}\text{amu}$.     

Indium sputtering upon bombardment with cluster ions

A surface-ionization method is developed for measuring the integral yields of neutral particles sputtered under the effect of ion bombardment. An investigation is performed to compare the integral yield of particles sputtered upon bombarding indium with Bi _m ⁺ cluster ions (m = 1?C7) in the energy range of 2?C10 keV and the secondary ion emission under bombardment with Bi _m ⁺ cluster ions (m = 1?C5) in the energy range of 6?C18 keV. A nonadditive increase in the indium sputtering coefficient is observed with an increasing number of atoms in the bombarding clusters.     

Optical emission spectrum of the NO2+ dication

We recorded and rotationally analyzed a new emission band at 2563 Å obtained from a low-pressure, hot cathode and magnetically confined electric discharge through pure NO vapor. The available experimental data from photoion-fluorescence photon coincidence and translational energy loss spectroscopy, in conjunction with ab initio calculation, allowed assignment of the new band to the B²Σ⁺-X²Σ⁺ (0, 0) transition of the NO²⁺ ion.     

Raman scattering from spin fluctuations and phonons in the heavy-fermion superconductor UPt3

Quasielastic scattering from spin fluctuations has been observed in UPt₃ by Raman spectroscopy. The experiments for wave vectors q≈0 show a nearly temperature independent linewidth for 5 K ⩽ T ⩽ 300 K Complementary to neutron scattering results this establishes the q independence of the spin relaxation rate, indicating the localized nature of the spin fluctuations. A Raman-active phonon near 79 cm^-1 (10 meV) shows a drastic increase in line-width with decreasing temperature, demonstrating strong electron-phonon coupling.