共查询到20条相似文献,搜索用时 234 毫秒
1.
L. I. Bruk S. M. Kabir V. A. Korotkov V. V. Leondar A. V. Simashkevich V. M. Tsaran 《Crystal Research and Technology》1990,25(8):897-902
The parameters of vaporization, mass-transfer, condensation, and epitaxial growth by hot wall technique (HWT) of ZnSe and CdSe thin films on monocrystalline Ge and Si substrates are studied (Bubnov et al.). It is shown, that the layers structure is improved as the mass transfer mechanism approaches to gasodinamical vapor flow. The influence of condensation temperature of the layers on their crystallographic structure is shown. The increase of the temperature gradient from the source towards the substrate as well as the substrate temperature conditions for growing layers of hexagonal modification. The decrease of the temperature gradient leads to cubic modification. The electron diffraction study revealed the stepwise character of the zinc selenide and cadmium selenide film growth. The knowledge of the parameters of ZnSe and CdSe thin films on monocrystalline Ge and Si by hot wall technique at relatively low substrate temperatures allows to obtain layers, suitable for formation of solid state devices for registration and reflection of optical information. 相似文献
2.
3.
本文采用化学气相输运(CVT)法,由Zn(5N)和Se(5N)一步直接生长了片状ZnSe单晶,并对其结构特性和光电性能进行分析。研究表明,生长出的ZnSe单晶仅显露(111)面,红外透过率约为40%~42%,具有较高的结晶质量。该ZnSe单晶可与In电极形成良好的欧姆接触,其体电阻率约为7.3×109Ω.cm。 相似文献
4.
The ZnSe : N epitaxial layers were grown on (1 1 0) ZnSe substrates in a low-pressure metalorganic chemical vapor deposition (MOCVD) system using hydrogen as a carrier gas, and using ammonia as a dopant source. In order to obtain highly doped ZnSe : N epitaxial layers, the optimum growth and doping conditions were determined by studying the photoluminescence (PL) spectra from the ZnSe epitaxial layers grown at different ammonia flux and VI/II flux ratio. Furthermore, in order to enhance the concentration of active nitrogen in ZnSe epitaxial layer, a rapid thermal anneal technique was used for post-heat-treating. The results show that the annealing temperature of over 1023 K is necessary. Beside, a novel treatment method to obtain a smooth substrate surface for growing high quality ZnSe epitaxial layers is also described. 相似文献
5.
6.
7.
《Journal of Crystal Growth》1999,196(1):83-87
The self-moving convection shield was used in the growth of ZnSe single crystal by chemical vapor transport method using iodine as a transport agent. The reduction of the convection enables the growth of a 1-in diameter ZnSe single crystal. The incorporation efficiency of iodine on (1 1 1)B facet was proved to be larger than that on (1 0 0) facet. Impurity-hardening effect of incorporated iodine in the grown ZnSe crystal is also suggested. 相似文献
8.
T. Honda S. W. Lim K. Inoue K. Hara H. Munekata H. Kukimoto F. Koyama K. Iga 《Journal of Crystal Growth》1997,170(1-4):503-506
We have fabricated a ZnSe diode using Li3N diffusion technique for the purpose of forming p-type ZnSe. The maximum hole concentration in the Li3N-diffused ZnSe layer, which has been grown on a GaAs substrate by metalorganic vapor phase epitaxy, was as high as 1018 cm−3. The ohmic contact to the p-type ZnSe has been demonstrated and the specific contact resistance of Au/p-ZnSe was 1 × 10−2 Ω · cm2. The Li3N diffusion technique is useful for the bfabrication of ohmic contacts to p-ZnSe. 相似文献
9.
Kalinushkin V. P. Klechkovskaya V. V. Klevkov Y. V. Chukichev M. V. Rezvanov R. R. Ilichev N. N. Orekhov A. S. Uvarov O. V. Mironov S. A. Gladilin A. A. Chapnin V. A. 《Crystallography Reports》2019,64(1):113-118
Crystallography Reports - The effect of thermal treatment in zinc vapor on the stoichiometry, defect and impurity structure, and activator cathodoluminescence of ZnSe doped with iron by the thermal... 相似文献
10.
ZnSe crystals have been grown by the travelling heater method (THM) with PbCl2 as solvent. Our investigations have shown that ZnSe crystals could be obtained with high crystalline perfection referred to a full width at the half maximum (FWHM) down to 20 arcsec of double crystal rocking curves measured at chemically polished (100)-oriented surfaces. Solvent growth techniques like THM should have a remarkable potential for ZnSe bulk growth if the capture of solute as inclusion and precipitation can be avoided. 相似文献
11.
Ken-ichi Ogata Takashi Kera Daisuke Kawaguchi Shizuo Fujita Shigeo Fujita 《Journal of Crystal Growth》1997,170(1-4):507-509
Time-resolved photoluminescence (TRPL) measurements are made on p-type nitrogen-doped ZnSe grown by photoassisted metalorganic vapor phase epitaxy (MOVPE) together with post-growth thermal annealing, in order to investigate optical quality of the layers. It is suggested that the annealing degrades the layer quality and the MOVPE samples have more non-radiative recombination centers compared with MBE samples. A key issue for high quality p-ZnSe by MOVPE seems to be optimization of annealing conditions. 相似文献
12.
Mitsuru Funato Satoshi Aoki Shizuo Fujita Shigeo Fujita 《Journal of Crystal Growth》1997,170(1-4):276-280
We have used atomic force microscopy to investigate the initial stages of the growth of GaAs on ZnSe by metalorganic vapor phase epitaxy. Underlying ZnSe with an atomically flat surface is achieved by growth at 450°C and post-growth annealing at the same temperature. The growth modes of GaAs on the ZnSe surface strongly depend on growth temperatures. The growth carried out at 450°C is 2-dimensional, while that at 550°C is highly 3-dimensional (3D), where the 3D islands are elongated in the [110] direction. The growth behavior, unlike homoepitaxy, is well interpreted in terms of low sticking coefficient and anisotropic lateral growth rate in the heterovalent heteroepitaxy. 相似文献
13.
Laxmi Narayan Tripathi Sourabh Barua 《Progress in Crystal Growth and Characterization of Materials》2019,65(4):100465
This review article covers the growth and characterization of two-dimensional (2D) crystals of transition metal chalcogenides, h-BN, graphene, etc. The chemical vapor transport method for bulk single crystal growth is discussed in detail. Top-down methods like mechanical and liquid exfoliation and bottom-up methods like chemical vapor deposition and molecular beam epitaxy for mono/few-layer growth are described. The optimal characterization techniques such as optical, atomic force, scanning electron, and Raman spectroscopy for identification of mono/few-layer(s) of the 2D crystals are discussed. In addition, a survey was done for the application of 2D crystals for both creation and deterministic transfer of single-photon sources and photovoltaic systems. Finally, the application of plasmonic nanoantenna was proposed for enhanced solar-to-electrical energy conversion and faster/brighter quantum communication devices. 相似文献
14.
ZnSe红外窗口材料的性能及其制备 总被引:3,自引:0,他引:3
ZnSe是一种优秀的红外窗口材料,得到广泛的关注.在本文叙述了ZnSe红外窗口材料的光学特性和力学特性,以及详细地描述ZnSe体单晶熔体法、气相法、溶液法和固相再结晶制备技术及其影响因素. 相似文献
15.
Makoto Mikami Kwang-Soon Park Yasutoshi Noda Yoshitaka Furukawa 《Journal of Crystal Growth》1994,140(3-4):429-431
Radical-assisted metalorganic chemical vapor deposition (MOCVD) of ZnSe has been performed by using diethylzinc (DEZn) and diethylselenide (DESe) as a source and azo-t-butane ((t-C4H9)2N2)and nitrogen trifluoride (NF3) as co-reactants. The growth rate was significantly increased in the measured temperature range of 623 to 723 K. 相似文献
16.
For the precursor combination dimethylzinc-triethylamine and ditertiarybutylselenide the use of nitrogen carrier gas was investigated for the metalorganic vapor phase epitaxy (MOVPE) of ZnSe and ZnSe:N. The nitrogen doping was carried out with a separate nitrogen flow which was activated by a dc-plasma. In the photoluminescence spectra of undoped layers grown at 340°C with a VI/II ratio of 0.18 only excitonic emissions, separated into free and donor bound excitons, can be observed. The background carrier concentration was of the order of 1 × 1016 cm−3. The growth rate of epilayers grown in nitrogen is reduced by about 75% in comparison to the value obtained by using hydrogen as carrier gas. The doping can be regulated by the dopant flow and by the total pressure in the reactor. With increasing flow of plasma activated nitrogen and a reduced total pressure, the PL spectra showed broadened DAP emission without excitonic emissions. The electrical and optical properties obtained with nitrogen carrier gas are comparable with the results obtained with hydrogen carrier gas. So far, no p-type conductivity was measured. Therefore, the problem of compensation of p-type conductivity of ZnSe : N doped by dc-plasma enhanced N2 was not solved by the use of N2 carrier gas. 相似文献
17.
本文通过将新型化学气相反应促进剂Zn(NH4)3Cl5引入到热壁外延系统中,以二元素单质Zn和Se为原料,直接在Si(111)衬底上生长了高质量的ZnSe晶体薄膜,薄膜成分接近理想化学计量比。研究了主要工艺参数对薄膜生长形貌和性能的影响。采用SEM、AFM、EDS和PL谱技术研究了生长的ZnSe薄膜的形貌、成分和发光特性。研究结果表明,热壁温度和生长时间是影响ZnSe薄膜形貌的主要因素;气相反应促进剂在薄膜生长和调节成分方面扮演了关键角色,Zn(NH4)3Cl5的存在使得Zn(g)和Se2(g)合成ZnSe晶体的反应转变为气固非一致反应,从而更容易获得近乎理想化学计量比的ZnSe薄膜。ZnSe薄膜在氦镉激光激发下,室温下PL谱由近带边发射和(VZn-ClSe)组合的SA发光组成,而在飞秒激光激发下,仅在481nm处显示出强烈的双光子发射峰。 相似文献
18.
D. N. Gnoth I. B. Poole T. L. Ng D. A. Evans N. Maung J. O. Williams A. C. Wright 《Journal of Crystal Growth》1997,170(1-4):198-202
The growth of ZnSe on GaAs by metal organic vapour phase epitaxy (MOVPE) has been studied using reflectance anisotropy spectroscopy (RAS). The RA spectra of ZnSe are significantly different for growth on initially Se- or Zn-exposed GaAs surfaces. The Se-terminated GaAs (001) RA spectrum has Se-dimer-related features at 3.3 and 5.1 eV, and the large, high energy peak dominates during ZnSe growth on this surface. Transmission electron microscopy (TEM) analysis has been used to show that these large RA signals arise from anisotropic surface corrugation of the growing ZnSe epilayer. Under initially Zn-stabilised growth conditions, the ZnSe epilayer RA spectrum is largely featureless, showing only a weak peak at 4.7 eV and a dip at 5.1 eV. The corresponding surface anisotropy is greatly reduced in comparison with growth from the initially Se-terminated surface. These observations reveal RAS to the an important technique for ensuring the desired initial GaAs surface since the grown ZnSe surface morphology is critically dependent on the pre-growth substrate surface treatment. However, as the characteristic ZnSe RA spectra are relatively insensitive to changes in substrate temperature and VI–II ratio, RAS is of more limited use as an in-growth surface probe for MOVPE-grown ZnSe. 相似文献
19.
M. J. Bevan H. D. Shih H. Y. Liu A. J. Syllaios W. M. Duncan 《Journal of Crystal Growth》1997,170(1-4):467-471
Epitaxial ZnSe layers have been grown by metal organic chemical vapor deposition (MOCVD) on GaAs and InGaAs substrates over the temperature range 400–500°C, using either diisopropyl selenide or diethyl selenide with diethyl zinc. The latter combination leads to improved optical and crystal quality at a growth temperature of 500°C. The narrowest double crystal rocking curve width is 100 arcsec in the lattice-matched case with a 3.5% InAs content in the InGaAs substrate, comparable to films grown by molecular beam epitaxy (MBE). Both n- and p-type dopants have been incorporated to fabricate p/n homojunction structures. 相似文献
20.
We investigated the hole trap level of nitrogen-doped ZnSe grown by a metalorganic vapor phase epitaxy method. The deep level transient spectroscopy (DLTS) signal and the C-V profile were measured to obtain the trap level, the capture cross section and the trap concentration. A deep hole trap level of about 1 eV from a valence band (labeled TLIS) was extracted from the tail of the DLTS peak. The distributions of the capture cross section and the trap level of the samples for different growth conditions were drawn in a figure to investigate the validity of the resolution of the DLTS signal. The origin of TLIS is thought to be in relation to the ionized acceptor or the charged acceptor-like localized defects. 相似文献