Epitaxial growth of Ge_(1-x)Sn_x films with x up to 0.14 grown on Ge(00l) at low temperature

We characterize the structures of Ge1-xSnx films with x up to 0.14 grown on Ge(00l) by molecular-beam epitaxy at low temperature. The results show that Ge1-xSnx films are fully strained even at high Sn composition. The in-plane lattice parameters remain exactly the same as that of the substrate. Depth sensitivity analysis of the lattice parameters indicates that the strains of the epitaxial films are all in homogeneity. The films are fully strained. Poisson ratios, the force constants for the bonds between Ge and Sn are estimated and discussed in the present paper. Raman results show Ge–Ge, Ge–Sn,Sn–Sn vibrational modes. The Sn–Sn bond aggregation may respond to the high quality of our films. The fully strained epitaxy films with high content of Sn may be useful in designing the high quality GeSn films.     

First-principles calculation of alloy scattering in Ge(x)Si(1-x)

First-principles electronic structure methods are used to find the rates of intravalley and intervalley n-type carrier scattering due to alloy disorder in Si(1-x)Ge(x) alloys. The required alloy scattering matrix elements are calculated from the energy splitting of nearly degenerate Bloch states which arises when one average host atom is replaced by a Ge or Si atom in supercells containing up to 128 atoms. Scattering parameters for all relevant Delta and L intravalley and intervalley alloy scattering are calculated. Atomic relaxation is found to have a substantial effect on the scattering parameters. f-type intervalley scattering between Delta valleys is found to be comparable to other scattering channels. The n-type carrier mobility, calculated from the scattering rate using the Boltzmann transport equation in the relaxation time approximation, is in excellent agreement with experiments on bulk, unstrained alloys.     

Comparison of Si and Ge low-loss spectra to interpret the Ge contrast in EFTEM images of Si(1-x) Ge(x) nanostructures

Recently, an EFTEM imaging method, exploiting the inelastically scattered electrons in the 60-90eV energy range, was proposed to visualise Ge in SiGe alloys [Pantel, R., Jullian, S., Delille, D., Dutartre, D., Chantre, A., Kermarrec, O., Campidelli, Y., Kwakman, L.F.T.Z., 2003. Inelastic electron scattering observation using Energy Filtered Transmission Electron Microscopy for silicon-germanium nanostructures imaging. Micron 34, 239-247]. This method was proven to be highly more efficient in terms of noise, drift and exposure time than the imaging of the weak and delayed ionization GeL2,3 edge at 1236eV. However, the physical phenomenon behind this Ge contrast was not clearly identified. In this work, we explain the origin of this Ge contrast, by comparing in details EELS low-loss spectra (<100eV) recorded from pure Si and Ge crystals. High resolved low-loss experiments are performed using analytical Field Emission Gun Transmission Electron Microscopes fitted or not with a monochromator. Low-loss spectra (LLS) are then deconvoluted from elastic/quasi-elastic and plural scattering effects. The deconvolution procedure is established from Si spectra recorded with the monochromated machine. The absence of second plasmon and the measurement of a band gap (1.12eV) on the Si single scattering distribution (SSD) spectrum allowed us to control the accuracy of the deconvolution procedure at high and low energy and to state that it could be reliably applied to Ge spectra. We show that the Ge-M4,5 ionisation edge located at 29eV, which is shadowed by the high second plasmon in the unprocessed Ge spectrum, can be clearly separated in the single scattering spectrum. We also show that the front edge of Ge-M4,5 is rather sharp which generates a high intensity post edge tail on several tens of eV. Due to this tail, the Si and Ge EELS signals in the 60 to 100eV energy window are very different and the monitoring of this signal gives information about the Ge concentration inside SiGe alloys. It is now evident that the EFTEM imaging technique proposed to quantify Ge (90eV/60eV image ratio) in Si-Ge nanostructures is valid and is a relevant way of exploiting the Ge-M4-5 ionisation edge.     

Ge self-diffusion in epitaxial Si(1)-(x)Ge(x) layers

Diffusion coefficients and activation energies have been determined for Ge diffusion in strain-relaxed Si(1)-(x)Ge(x) with x = 0.00, 0.10, 0.20, 0.30, 0.40, and 0.50. The activation energy drops from 4.7 eV in Si and Si(0.90)Ge(0.10) to 3.2 eV at x = 0.50. This value compares with the literature value for Ge self-diffusion in Ge, suggesting Ge-like diffusion already at x approximately equal to 0.5. The effect of strain on the diffusion was also studied showing a decrease in diffusion coefficient and an increase in activation energy upon going from compressive over relaxed to tensile strain.     

Low temperature electron transport in phosphorus-doped ZnO films grown on Si substrates

Low temperature magneto-transport properties and electron dephasing mechanisms of phosphorus-doped ZnO thin films grown on (1 1 1) Si substrates with Lu₂O₃ buffer layers using pulsed laser deposition were investigated in detail by quantum interference and weak localization theories under magnetic fields up to 10 T. The dephasing length follows the temperature dependence with an index p≈1.6 at higher temperatures indicating electron–electron interaction, yet becomes saturated at lower temperatures. Consistent with photoluminescence measurements and the multi-band simulation of the electron concentration, such behavior was associated with the dislocation densities obtained from x-ray diffraction and mobility fittings, where charged edge dislocations acting as inelastic Coulomb scattering centers were affirmed responsible for electron dephasing. Owing to the temperature independence of the dislocation density, the phosphorus-doped ZnO film maintained a Hall mobility of 4.5 cm² V⁻¹ s⁻¹ at 4 K.     

On the characteristics of AlGaN films grown on (111) and (001) Si substrates

High Al-content Al_xGa_1−xN films were deposited on (001) and (111) Si substrates at 1000 °C using high temperature AlN buffer layers. Experimental results show that Al_xGa_1−xN films grown on (111) Si substrates exhibit better crystalline quality than that in the films deposited on (001) Si substrates. Cracks were found in the high Al-content Al_xGa_1−xN/(111) Si samples but they were not observed in the Al_xGa_1−xN films grown on (001) Si substrates having the same film thicknesses and Al compositions. Based upon the results of X-ray diffraction (XRD) and transmission electron microscopy (TEM), it appears that mono-crystalline Al_xGa_1−xN films were achieved on (111) Si substrates while columnar structure was observed in the Al_xGa_1−xN/(001) Si samples. According to the depth profiles of Al_xGa_1−xN/Si samples using secondary ion mass spectroscopic (SIMS) analyses, enhanced Al inter-diffusion in the Al_xGa_1−xN/(001) Si samples was identified. Room temperature (RT) photoluminescence (PL) measurements of the Al_xGa_1−xN (x≦0.10)/(111) Si samples exhibit strong near band edge luminescence. The PL emission linewidth was found to decrease with the decrement of Al-content.     

Plastic relaxation anisotropy in epitaxial films grown on miscut Si(001) substrates

A way of calculating the structural parameters of semiconductor epitaxial layers grown on miscut (0 0 1) substrates is developed. It is shown that the difference between the tensor of film elastic strains and the spherical tensor of strains translating the film’s crystal lattice into the substrate’s lattice is a tensor whose components are proportional to X-ray strains. The technique is used to analyze GaAs and Ge_0.2Si_0.8 films grown on (1 1 13) Si substrates. The anisotropy of the degree of plastic relaxation is established for lateral directions perpendicular and parallel to the interfacial steps in the GeSi film. It is proposed that noninteger Miller indices be used to denote the direction and value of the rotation of the film’s crystal lattice with respect to the substrate lattice.     

Structure and properties of ZnO films grown on Si substrates with low temperature buffer layers

Zinc oxide (ZnO) thin films were grown on Si (1 0 0) substrates by pulsed laser deposition (PLD) using two-step epitaxial growth method. Low temperature buffer layer (LTBL) was initially deposited in order to obtain high quality ZnO thin film; the as-deposited films were then annealed in air at 700 °C. The effects of LTBL and annealing treatment on the structural and luminescent properties of ZnO thin film were investigated. It was found that tensile strain was remarkably relaxed by employing LTBL and the band-gap redshifted, correspondingly. The shift value was larger than that calculated from band-gap theories. After annealing treatment, it was found that the annealing temperature with 700 °C has little influence on strains of ZnO films with LTBLs other than directly deposited film in our experiments. Interestingly, the different behaviors in terms of the shift of ultraviolet (UV) emission after annealing between films with and without buffer were observed, and a tentative explanation was given in this paper.     

Growth of Ge islands on prepatterned Si (0 0 1) substrates

We report on the growth and properties of Ge islands grown on (0 0 1) Si substrates with lithographically defined two-dimensionally periodic pits. After thermal desorption and a subsequent Si buffer layer growth these pits have an inverted truncated pyramid shape. We observe that on such prepatterned substrates lens-like Ge-rich islands grow at the pit bottoms with less Ge deposition than necessary for island formation on flat substrates. This is attributed to the aggregation of Ge at the bottom of the pits, due to Ge migration from the pit sidewalls. At the later stages of growth, dome-like islands with dominant {1,1,3} or {15,3,23}, or other high-index facets [i.e. {15,3,20} facets] are formed on the patterned substrates as shown by surface orientation maps using atomic force microscopy. Furthermore, larger coherent islands can be grown on patterned substrates as compared to Ge deposition on flat ones.     

Photoacoustic spectroscopy of thin SiO2 films grown on (100) crystalline Si substrates

Photoacoustic Spectroscopy (PAS) has been used to measure the thickness of thin SiO₂ films grown on (100) Si wafers. The data are in reasonable agreement with a simple theoretical model. It suggests that photoacoustic Spectroscopy is complementary to optical interferometry, in that it is capable of giving quantitative estimates of thin transparent films on opaque substrates of low reflectivity via the transmitted fraction of the optical energy incident on the sample. Both theoretical and experimental results indicate that PAS can be very useful in the measurement of thin films on substrates of low reflectivity.     

Hidden magnetic configuration in epitaxial La(1-x) Sr(x) MnO3 films

We present an unreported magnetic configuration in epitaxial La(1-x) Sr(x) MnO3 (x ～ 0.3) (LSMO) films grown on strontium titanate (STO). X-ray magnetic circular dichroism indicates that the remanent magnetic state of thick LSMO films is opposite to the direction of the applied magnetic field. Spectroscopic and scattering measurements reveal that the average Mn valence varies from mixed Mn(3+)/Mn(4+) to an enriched Mn3+ region near the STO interface, resulting in a compressive lattice along the a, b axis and a possible electronic reconstruction in the Mn e(g) orbital (d(3)z(2)-r(2). This reconstruction may provide a mechanism for coupling the Mn3+ moments antiferromagnetically along the surface normal direction, and in turn may lead to the observed reversed magnetic configuration.     

Magnesium incorporation efficiencies in Mg_xZn_(1-x)O films on ZnO substrates grown by metalorganic chemical vapor deposition

We investigate the magnesium(Mg) incorporation efficiencies in Mg_xZn_(1-x)O films on c-plane Zn-face ZnO substrates by using metalorganic chemical vapor deposition(MOCVD) technique. In order to deposit high quality Mg_xZn_(1-x)O films,atomically smooth epi-ready surfaces of the hydrothermal grown ZnO substrates are achieved by thermal annealing in O_2 atmosphere and characterized by atomic force microscope(AFM). The AFM, scanning electron microscope(SEM),and x-ray diffraction(XRD) studies demonstrate that the Mg_xZn_(1-x)O films each have flat surface and hexagonal wurtzite structure without phase segregation at up to Mg content of 34.4%. The effects of the growth parameters including substrate temperature, reactor pressure and Ⅵ/Ⅱ ratio on Mg content in the films are investigated by XRD analysis based on Vegard's law, and confirmed by photo-luminescence spectra and x-ray photoelectron spectroscopy as well. It is indicated that high substrate temperature, low reactor pressure, and high Ⅵ/Ⅱratio are good for obtaining high Mg content.     

Interplay between crystal field splitting and Kondo effect in CeNi(9)Ge(4-x)Si(x)

The pseudo-ternary solid solution CeNi(9)Ge(4-x)Si(x) (0?≤?x?≤?4) has been investigated by means of x-ray diffraction, magnetic susceptibility, specific heat, electrical resistivity, thermopower and inelastic neutron scattering studies. The isoelectronic substitution of germanium by silicon atoms causes a dramatic change of the relative strength of competing Kondo, RKKY and crystal field (CF) energy scales. The strongest effect is the continuous elevation of the Kondo temperature T(K) from approximately 3.5?K for CeNi(9)Ge(4) to about 70?K for CeNi(9)Si(4). This increase of the Kondo temperature is attended by a change of the CF level scheme of the Ce ions. The interplay of the different energy scales results in an incipient reduction of the ground state degeneracy from an effectively fourfold degenerate non-magnetic Kondo ground state with unusual non-Fermi-liquid features of CeNi(9)Ge(4) to a lower one, followed by an increase towards a sixfold, fully degenerate ground state multiplet in CeNi(9)Si(4) (T(K)?～?Δ(CF)).     

Structure of the heavy electron compounds Ce(Cu x Al1-x )5 and Ce(Cu x Ga1-x )5, [0.6≦x≦0.8]

Neutron powder diffraction measurtements on the recently discovered heavy electron compounds Ce(Cu _x Al_1-x )₅ and Ce(Cu _x Ga_1-x )₅ show that Al or Ga atoms in these compounds locate exclusively on the 3g sites of space groupP6/mmm. Further Rietveld analysis shows that these atoms on the 3g sites are disordered.     

Time evolution of the microstructures of LaAlO3 thin films grown on Si substrates

The structure and stability of amorphous LaAlO₃ thin films deposited on Si substrates were investigated by an X-ray reflectivity technique. The results show that the film/substrate interface contains a La_xAl_yO_zSi layer and a SiO_x layer. X-ray reflectivity profiles showed a continuous change after the films were exposed to ambient air for six months at room temperature. The X-ray reflectivity simulations suggest a diffusion of La and Al (mostly La) from the LaAlO₃ layer to the La_xAl_yO_zSi layer. This process stopped after about six months, and then the films reached a relative equilibrium state. Moreover, post-air-exposure annealing at 300 °C in air atmosphere could not change the final distributions of La and Al along the normal to the film’s substrate. On the other hand, the leakage-current density slightly decreases after annealing at 300 °C, which might be caused by the decrease of oxygen vacancies in the films. PACS 61.10.Kw; 77.55.+f; 68.60.Dv     

Magnetic excitations in EuCu(2)(Si(x)Ge(1-x))(2): from mixed valence towards magnetism

We report the inelastic neutron scattering study of spin dynamics in EuCu(2)(Si(x)Ge(1-x))(2) (x?=?1, 0.9, 0.75, 0.6), performed in a wide temperature range. At x?=?1 the magnetic excitation spectrum was found to be represented by the double-peak structure well below the energy range of the Eu(3+) spin-orbit (SO) excitation (7)F(0)→(7)F(1), so that at least the high-energy spectral component can be assigned to the renormalized SO transition. Change of the Eu valence towards 2?+ with increased temperature and/or Ge concentration results in further renormalization (lowering the energy) and gradual suppression of both inelastic peaks in the spectrum, along with developing sizeable quasielastic signal. The origin of the spectral structure and its evolution is discussed in terms of excitonic model for the mixed valence state.     

Eu valency and recoil-free fraction in EuCo2Si2-x Ge x

The valency of Eu in EuCo₂Si_2-x Ge _x withx=0, 0.5, 1.0, and 2 was determined by¹⁵¹Eu-Mössbauer, Eu-L _III X-ray absorption as well as magnetization studies in the temperature range from 4.1 to 650 K and at external pressures up to 66 kbar. Eu in EuCo₂Si₂ is found to be predominantly trivalent, while in EuCo₂Ge₂ it is divalent. In EuCo₂Si_2-x Ge _x (0x2), two separate narrow Mössbauer absorption lines are observed, corresponding to stable divalent and trivalent Eu ions. In EuCo₂Si_1.5Ge_0.5, the relative spectral areas of the Eu²⁺ and Eu³⁺ Mössbauer lines are found to be strongly temperature and pressure dependent. A decrease in temperature or an application of pressure leads to small changes in the positions of the two absorption lines and to a pronounced increase in the relative spectral area of the Eu²⁺ component. On the other hand, X-ray absorption near-edge structure (XANES) measurements at theL _III threshold of Eu reveal no change in the relative intensity of the Eu²⁺ and Eu³⁺ subspectra as a function of temperature. From these observations it is concluded that the recoil-free fractions of the Eu²⁺ and Eu³⁺ Mössbauer resonances in EuCo₂Si_1.5Ge_0.5 depend in a substantially different way on temperature. With the Debye approximation, Debye temperatures of _D(Eu²⁺)=175 K and _D(Eu³⁺)=250 K are derived. These results clearly show that relative abundances of Eu²⁺ and Eu³⁺ ions may only be derived from Mössbauer linie intensities, if appropriate corrections for differences in recoil-free fraction are applied; this applies even to mixed-valent systems, where Eu ions with different valencies occupy crystallographically equivalent sites.