Dielectric properties of Ca(Zr0.05Ti0.95)O3 thin films prepared by chemical solution deposition

Ca(Zr_0.05Ti_0.95)O₃ (CZT) thin films were grown on Pt(1 1 1)/Ti/SiO₂/Si(1 0 0) substrates by the soft chemical method. The films were deposited from spin-coating technique and annealed at 928 K for 4 h under oxygen atmosphere. CZT films present orthorhombic structure with a crack free and granular microstructure. Atomic force microscopy and field-emission scanning electron microscopy showed that CZT present grains with about 47 nm and thickness about 450 nm. Dielectric constant and dielectric loss of the films was approximately 210 at 100 kHz and 0.032 at 1 MHz. The Au/CZT/Pt capacitor shows a hysteresis loop with remnant polarization of , and coercive field of 18 kV/cm, at an applied voltage of 6 V. The leakage current density was about at 3 V. Dielectric constant-voltage curve is located at zero bias field suggesting the absence of internal electric fields.     

铪掺杂对锆钛酸钡钙陶瓷电学性能的调控

用固相反应法制备了B位Hf掺杂的Ba_0.95Ca_0.05 Zr_0.05Ti_0.95-xHf_x (BCZ_0.05T_(0.95-x)-xH) (x=0、0.02、0.04、0.06和0.08)陶瓷。研究B位同时含有Hf、Zr、Ti三种元素时,BCZ_0.05T_(0.95-x)-xH陶瓷的相结构变化与电学性能的差异。XRD测试结果表明：Hf₄₊^融入晶格,造成晶格膨胀。BCZ_0.05T_(0.95-x)-xH(x=0、0.02)陶瓷的XRD测试结果表明,该体系中存在明显的四方相与正交相共存的多晶型相转变(PPT),但正交相逐渐转变为主晶相;BCZ_0.05T_(0.95-x)-xH (x=0.04、0.06)陶瓷的XRD结果表明,四方相进一步减少,三方相却逐渐增加;当x继续增大到0.08时,XRD测试发现该体系只存在正交相和三方相结构。SEM测试发现,随着Hf的掺杂量增加,晶粒尺寸逐渐减小。剩余极化随Hf掺杂量的增加先增大再减小,在x为0.02时取得最大值,Hf掺杂显著降低矫顽场(Ec)。压电测试结果表明BCZ_0.05T_0.96-0.04H陶瓷具有最大压电系数(d₃₃=259 pC/N)。     

Etude calorimetrique et dilatometrique sous pression des transitions de phase de Pb(Zr0,965Ti0,035)O3 dope

The pressure—temperature phase diagram of the solid solution is drawn by calorimetric measurements. With temperature increasing the observed phase transitions are, according to the pressure: antiferroelectric, ferroelectric, paraelectric, or antiferroelectric, antiferroelectric, paraelectric. The heats of transition are measured and compared with those calculated using the Clausius—Clapeyron relationships for first-order transitions; the deviations observed at some phase transitions are discussed.     

Magnetostatic Coupling in CoFe2O4/Pb(Zr0.53Ti0.47)O3 Magnetoelectric Composite Thin Films of 2-2 Type Structure

CoFe₂O₄/Pb(Zr_0.53Ti_0.47)O₃ (CFO/PZT) magnetoelectric composite thin films of 2-2 type structure had been prepared onto Pt/Ti/SiO₂/Si substrate by a sol-gel process and spin coat-ing technique. The structure of the prepared thin film is substrate/PZT/CFO/PZT/CFO. Two CFO ferromagnetic layers are separated from each other by a thin PZT layer. The upper CFO layer is magnetostatically coupled with the lower CFO layer. Subsequent scan-ning electron microscopy (SEM) investigations show that the prepared thin films exhibit good morphologies and compact structure, and cross-sectional micrographs clearly display a multilayered nanostructure of multilayered thin films. The composite thin films exhibit both good magnetic and ferroelectric properties. The spacing between ferromagnetic layers can be varied by adjusting the thickness of intermediate PZT layer. It is found that the strength of magnetostatic coupling has a great impact on magnetoelectric properties of composite thin films, i.e., the magnetoelectric voltage coefficient of composite thin film tends to increase with the decreasing of pacing between two neighboring CFO ferromagnetic layers as a result of magnetostatic coupling effect.     

Dielectric behavior and impedance analysis of lead-free CuO doped (Na0.50K0.50)0.95(Li0.05Sb0.05Nb0.95)O3 ceramics

Pure (Na_0.50K_0.50)_0.95(Li_0.05Sb_0.05Nb_0.95)O₃ (NKNLS) and CuO doped NKNLS perovskite structured ferroelectric ceramics were prepared by the solid-state reaction method. x wt% of CuO (x = 0.2–0.8 wt%) was added in the NKNLS ceramics. X-ray diffraction patterns indicate that single phase was formed for pure NKNLS while a small amount of second phase (K₆Li₄Nb₁₀O₃₀ ∼ 3%) was present in Cu²⁺ doped NKNLS ceramics. Dielectric anomalies around the temperatures of 120 °C and 350 °C have been identified as the ferroelectric–paraelectric transition (orthorhombic to tetragonal and tetragonal to cubic) temperatures for pure NKNLS compound. The electrical behavior of the ceramics was studied by impedance study in the high temperature range. Impedance analysis has shown the grain and grain boundary contribution using an equivalent circuit model. The impedance response in pure and Cu²⁺ doped NKNLS ceramics could be resolved into two contributions, associated with the bulk (∼grains) and the grain boundaries. From the conductivity studies, it is found that activation energies are strongly frequency dependent. The activation energy obtained from dielectric relaxation data may be attributed to oxygen ion vacancies.     

Crystal structures of lazulite-type oxidephosphates TiTi3O3(PO4)3 and M4Ti27O24(PO4)24 (M=Ti, Cr, Fe)

Single crystals of the oxidephosphates Ti^IIITi^IV₃O₃(PO₄)₃ (black), Cr^III₄Ti^IV₂₇O₂₄(PO₄)₂₄ (red-brown, transparent), and Fe^III₄Ti^IV₂₇O₂₄(PO₄)₂₄ (brown) with edge-lengths up to 0.3 mm were grown by chemical vapour transport. The crystal structures of these orthorhombic members (space group F2dd ) of the lazulite/lipscombite structure family were refined from single-crystal data [Ti^IIITi^IV₃O₃(PO₄)₃: Z=24, a=7.3261(9) Å, b=22.166(5) Å, c=39.239(8) Å, R₁=0.029, wR₂=0.084, 6055 independent reflections, 301 variables; Cr^III₄Ti^IV₂₇O₂₄(PO₄)₂₄: Z=1, a=7.419(3) Å, b=21.640(5) Å, c=13.057(4) Å, R₁=0.037, wR₂=0.097, 1524 independent reflections, 111 variables; Fe^III₄Ti^IV₂₇O₂₄(PO₄)₂₄: Z=1, a=7.4001(9) Å, b=21.7503(2) Å, c=12.775(3) Å, R₁=0.049, wR₂=0.140, 1240 independent reflections, 112 variables). For Ti^IIITi^IVO₃(PO₄)₃ a well-ordered structure built from dimers [Ti^III,IV₂O₉] and [Ti^IV,IV₂O₉] and phosphate tetrahedra is found. The metal sites in the crystal structures of Cr₄Ti₂₇O₂₄(PO₄)₂₄ and Fe₄Ti₂₇O₂₄(PO₄)₂₄, consisting of dimers [M^IIITi^IVO₉] and [Ti^IV,IV₂O₉], monomeric [Ti^IVO₆] octahedra, and phosphate tetrahedra, are heavily disordered. Site disorder, leading to partial occupancy of all octahedral voids of the parent lipscombite/lazulite structure, as well as splitting of the metal positions is observed. According to Guinier photographs Ti^III₄Ti^IV₂₇O₂₄(PO₄)₂₄ (a=7.418(2) Å, b=21.933(6) Å, c=12.948(7) Å) is isotypic to the oxidephosphates M^III₄Ti^IV₂₇O₂₄(PO₄)₂₄ (M^III: Cr, Fe). The UV/vis spectrum of Cr₄Ti₂₇O₂₄(PO₄)₂₄ reveals a rather small ligand-field splitting Δ_o=14,370 cm⁻¹ and a very low nephelauxetic ratio β=0.72 for the chromophores [Cr^IIIO₆] within the dimers [Cr^IIITi^IVO₉].     

La(Li1/3Ti2/3)O3: a new 1:2 ordered perovskite

A new 1:2 ordered perovskite La(Li_1/3Ti_2/3)O₃ has been synthesized via solid-state techniques. At temperature >1185°C, Li and Ti are randomly distributed on the B-sites and the X-ray powder patterns can be indexed in a tilted (b⁻b⁻c⁺) Pbnm orthorhombic cell (a=a_c√2=5.545 Å, b=a_c√2=5.561 Å, c=2a_c=7.835 Å). However, for T?1175°C, a 1:2 layered ordering of Li and Ti along 〈111〉_c yields a structure with a P2₁/c monoclinic cell with a=a_c√6=9.604 Å, b=a_c√2=5.552 Å, c=a_c3√2=16.661 Å, β=125.12°. While this type of order is well known in the A²⁺(B²⁺_1/3B⁵⁺_2/3)O₃ family of niobates and tantalates, La(Li_1/3Ti_2/3)O₃ is the first example of a titanate perovskite with a 1:2 ordering of cations on the B-sites.     

Dielectric and impedance properties of Sr(Sm0.5Nb0.5)O3 ceramics

Perovskite types Sr(Sm_0.5Nb_0.5)O₃, (SSN) ceramics have been prepared through solid state reaction route. The scanning electron microscopy provides information on the quality of the samples and uniform grain distribution over the surface of the samples. The field dependence of the dielectric response was measured in a frequency range from 50 Hz to 1 MHz and in a temperature range from 60 °C to 420 °C indicates polydispersive nature of the materials. An analysis of the dielectric constant (?′) and tangent loss (tanδ) with frequency is performed assuming a distribution of relaxation times as confirmed by the scaling behavior of electric modulus spectra. The frequency dependence of the electric modulus peak is found to obey Arrhenius law with activation energy of ∼0.026 eV. The complex plane impedance plot shows the grain boundary contribution for higher value of dielectric constant in the law frequency region. The frequency dependence of electrical data is also analyzed in the framework of conductivity and electric modulus formalisms. Both these formalisms show qualitative similarities in relaxation times. The scaling behavior of imaginary part of electric modulus M″ suggests that the relaxation describes the same mechanism at various temperatures in SSN.     

VCe0.95M0.05 (M=Cu, Co, Mn, Fe或Cr) 复合氧化物的结构和氧化还原性能

采用溶胶 凝胶法制备VCe和VCe0.95M0.05(M=Cu,Co,Mn,Fe或Cr)复合氧化物。用XRD,拉曼光谱,XPS和TPR技术对结构和氧化还原性能进行表征。所有样品的主要物相是四方相的VCeO4。当Fe,Mn,Cu或Co取代部分Ce导致形成少量CeO2或单斜相的VCeO4。XPS结果表明VCe0.95Co0.05,VCe0.95Mn0.05,VCe0.95Cr0.05和VCe0.95Fe0.05复合氧化物中V的价态是+5+δ(δ<1)高于VCe,而VCe0.95Cu0.05相反,V的价态是+5-δ低于VCe。Fe,Co,Cr或Mn能促进VCeO4中V5+的还原,而Cu抑制VCeO4中V5+的还原。     

Vibrational spectra of the peroxotantalates (NH4)3[Ta(O2)4], K3[Ta(O2)4], Rb3[Ta(O2)4] and Cs3[Ta(O2)4] and the crystal structure of Rb3[Ta(O2)4]

The compounds (NH₄)₃[Ta(O₂)₄], K₃[Ta(O₂)₄], Rb₃[Ta(O₂)₄] and Cs₃[Ta(O₂)₄] have been prepared and investigated by X-ray powder methods as well as Raman- and IR-spectroscopy. In the case of Rb₃[Ta(O₂)₄] the structure has been solved from single crystal data. It is shown that all these compounds are isotypic and crystallize in the K₃[Cr(O₂)₄] type (SG , No. 121). The infrared- and Raman spectra (recorded on powdered samples) are discussed with respect to the internal vibrations of the peroxo-group and the dodecahedral [Ta(O₂)₄]³⁻ ion. Symmetry coordinates for the [Ta(O₂)₄]³⁻ ion are given from which the vibrational modes of the O-O stretching vibrations of the O₂²⁻ groups, the Ta-O stretching vibrations and the Ta-O bending vibrations are deduced.     

Effect of magnetostrictive phase on structural, dielectric and electrical properties of NiFe2O4 + Pb0.93La0.07(Zr0.60Ti0.40)O3 composites

Particulate composites of NiFe₂O₄ (NFO) and Pb_0.93La_0.07 (Zr_0.60Ti_0.40) O₃ (PLZT) were synthesized by solid-state reaction technique. Structure and surface morphological studies were carried out using X-ray diffraction and scanning electron microscopy techniques, respectively. Frequency dependent variation of dielectric constant (), loss tangent (tan δ) and ac resistivity for (x) NFO + (1−x) PLZT composites in the range 100 Hz–5 MHz at room temperature were studied. The temperature dependence of dielectric constant (′), loss tangent (tan δ) was studied in wide temperature range of measurement at fixed frequencies. Also DC resistivity measurements were carried out in the temperature range of 300 K–923 K. Structural, dielectric and electrical properties show notable change due to presence of magnetostrictive NFO phase along with PLZT.     

Reactions of small negative ions with O2(a Δg) and O2(X Σg)

The rate constants and product ion branching ratios were measured for the reactions of various small negative ions with O₂(X ³Σ_g⁻) and O₂(a ¹Δ_g) in a selected ion flow tube (SIFT). Only NH₂⁻ and CH₃O⁻ were found to react with O₂(X) and both reactions were slow. CH₃O⁻ reacted by hydride transfer, both with and without electron detachment. NH₂⁻ formed both OH⁻, as observed previously, and O₂⁻, the latter via endothermic charge transfer. A temperature study revealed a negative temperature dependence for the former channel and Arrhenius behavior for the endothermic channel, resulting in an overall rate constant with a minimum at 500 K. SF₆⁻, SF₄⁻, SO₃⁻ and CO₃⁻ were found to react with O₂(a ¹Δ_g) with rate constants less than 10⁻¹¹ cm³ s⁻¹. NH₂⁻ reacted rapidly with O₂(a ¹Δ_g) by charge transfer. The reactions of HO₂⁻ and SO₂⁻ proceeded moderately with competition between Penning detachment and charge transfer. SO₂⁻ produced a SO₄⁻ cluster product in 2% of reactions and HO₂⁻ produced O₃⁻ in 13% of the reactions. CH₃O⁻ proceeded essentially at the collision rate by hydride transfer, again both with and without electron detachment. These results show that charge transfer to O₂(a ¹Δ_g) occurs readily if the there are no restrictions on the ion beyond the reaction thermodynamics. The SO₂⁻ and HO₂⁻ reactions with O₂(a) are the only known reactions involving Penning detachment besides the reaction with O₂⁻ studied previously [R.S. Berry, Phys. Chem. Chem. Phys., 7 (2005) 289–290].     

Antimonypentafluoroorthotellurates: Sb(OTeF5)3, Sb(OTeF5)5 and salts of Sb(OTeF5)6−

Antimony(III)pentafluoroorthotellurate has been synthesized from SbF₃ and B(OTeF₅)₃. Contrary to a previous report it is a low melting, sublimable solid (mp = 28°, bp (0.1 torr) = 68°, ¹⁹F - NMR: AB₄ spinsystem δ (A) = ?42.7, δ (B) = ?38.1, J (AB) = 186 Hz). It reacts with F₂, Cl₂ and Br₂ to give SbF₂(OTeF₅)₃, SbCl₄⁺Sb(OTeF₅)₆^? and SbBr₄⁺ Sb(OTeF₅)₆^? respectively. Interaction of Xe(OTeF₅)₂ and Sb(OTeF₅)₃ yields Sb(OTeF₅)₅, which is unstable at room temperature. Salts containing the new anion Sb(OTeF₅)₆^? have been synthesized either from Sb(OTeF₅)₅ and a corresponding pentafluoroorthotellurate e.g. Sb(OTeF₅)₅ + NMe₄⁺ OTeF₅^? = NMe₄⁺ Sb(OTeF₅)₆^?, or from SbCl₄ Sb(OTeF₅)₆^? and an appropriate chloride SbCl₄⁺ Sb(OTeF₅)₆^? + NOCl = SbCl₅ + NO⁺ Sb(OTeF₅)₆^?, or oxidatively, using a mixture of Xe(OTeF₅)₂ and Sb(OTeF₅)₅, e.g. C₆F₆ + $\text{1}\text{2}$ Xe(OTeF₅)₂ + Sb(OTeF₅)₅ = C₆F₆⁺ Sb(OTeF₅)₆^? + $\text{1}\text{2}$ Xe.     

Dielectric properties of some MM′O4 and MTiM′O6 (M=Cr, Fe, Ga; M′=Nb, Ta, Sb) rutile-type oxides

We describe an investigation of the structure and dielectric properties of MM′O₄ and MTiM′O₆ rutile-type oxides for M=Cr, Fe, Ga and M′=Nb, Ta and Sb. All the oxides adopt a disordered rutile structure (P4₂/mnm) at ambient temperature. A partial ordered trirutile-type structure is confirmed for FeTaO₄ from the low temperature (17 K) neutron diffraction studies. While both the MM′O₄ oxides (CrTaO₄ and FeTaO₄) investigated show a normal dielectric property MTiM′O₆ oxides for M=Fe, Cr and M′=Nb/Ta/Sb display a distinct relaxor/relaxor-like response. Significantly the corresponding gallium analogs, GaTiNbO₆ and GaTiTaO₆, do not show a relaxor response at T<500 K.     

半化学法制备Pb(Fe2/3W1/3)O3陶瓷粉体的反应机理

铅系弛豫铁电陶瓷钨铁酸铅Pb(Fe2/3W1/3)O3(PFW)是一种重要的介电材料,具有较大的介电常数(8000)和较低的烧结温度(小于900℃),适用于制备低烧高介的多层陶瓷电容器犤1～4犦。在传统氧化物法合成PFW的过程中,易生成恶化介电性能的钨酸铅(PbWO4或Pb2WO5)或焦绿石相(Pb2FeWO6)等其他相犤3,4犦。尽管通过加入过量5%的Fe2O3可以消除这些其他相,但因含较多的变价铁离子(Fe3+和Fe2+)而产生介电老化的缺点犤5犦。虽然二次合成法被广泛用于制备铅系弛豫铁电陶瓷犤6犦,但对制备PFW陶瓷的效果并不明显,仍有少量的钨酸铅PbWO4存在,并且预烧…     

Low temperature phase transition studies on Pb(Mg0.5W0.5)O3 ceramic

We present here the results of X-ray diffraction (XRD), dielectric and calorimetric studies on lead magnesium tungustate, Pb(Mg_0.5W_0.5)O₃ (PMW) ceramic. It is shown that the low temperature antiferroelectric phase of PMW having orthorhombic structure (space group Pmcn) transforms to paraelectric cubic (space group Fm3m) phase at 281 K. The phase transition is of first order character as confirmed by coexistence of Pmcn and Fm3m phases over wide temperature range ∼50 K. The first order character of phase transition is also revealed by the observation of thermal hysteresis in the real part of dielectric permittivity and calorimetric studies. We do not find any evidence for the additional intermediate phase between antiferroelectric (Pmcn) and paraelectric (Fm3m) phases as reported in the literature. Anomalies in the heat flow and dielectric measurements support the finding of our XRD results and reveals that the phase transition temperature (T_c) is 281 K instead of 312 K reported in the literature.     

Non-centrosymmetric Ba3Ti3O6(BO3)2

The compound previously reported as Ba₂Ti₂B₂O₉ has been reformulated as Ba₃Ti₃B₂O₁₂, or Ba₃Ti₃O₆(BO₃)₂, a new barium titanium oxoborate. Small single crystals have been recovered from a melt with a composition of BaTiO₃:BaTiB₂O₆ (molar ratio) cooled between 1100°C and 850°C. The crystal structure has been determined by X-ray diffraction: hexagonal system, non-centrosymmetric space group, a=8.7377(11) Å, c=3.9147(8) Å, Z=1, wR(F²)=0.039 for 504 unique reflections. Ba₃Ti₃O₆(BO₃)₂ is isostructural with K₃Ta₃O₆(BO₃)₂. Preliminary measurements of nonlinear optical properties on microcrystalline samples show that the second harmonic generation efficiency of Ba₃Ti₃O₆(BO₃)₂ is equal to 95% of that of LiNbO₃.     

The effects of doping ferromagnetic spinel CdCr2Se4 with Sb ions

Semiconducting spinel CdCr₂Se₄ orders ferromagnetically below T_C=130 K. A series of single-crystals of CdCr₂Se₄ doped with Sb³⁺ ions has been synthesized in order to study an effect of the substitution on the cation distribution and the magnetic properties. The compounds of Cd_ySb_xCr_zSe₄ have been investigated by means of X-ray diffraction, magnetization measurements and electron spin resonance spectroscopy. Two selected samples of the composition (Cd_1−xSb_x)[Cr₂]Se₄ with x=0.13 and 0.44 retained cubic symmetry with space group . The unit cell parameter appeared to be sensitive to the concentration of Sb³⁺ admixture: it increases with x, despite a close similarity in the ionic radii of Cd²⁺ and Sb³⁺ in tetrahedral coordination. Upon partial substitution of Cd²⁺ by Sb³ no obvious change in the Curie temperature was observed, however, the effective magnetic moment slightly increased, what may result from the appearance of Cr²⁺ ions. The characteristic feature of the system studied is an extended range of short-range magnetic order, in which the magnetic properties in the paramagnetic state are governed by the formation of ferromagnetic clusters, as indicated by both the bulk magnetometric and spectroscopic data.     

Phase Diagram and Phase Transitions in the Relaxor Ferroelectric Pb(Fe2/3W1/3)O3-PbTiO3 System

A complete solid solution between relaxor ferroelectric Pb(Fe_2/3W_1/3)O₃ (PFW) and ferroelectric PbTiO₃ (PT), (1−x)PFW-xPT, was synthesized by a B-site precursor method and characterized by X-ray diffraction, differential scanning calorimetry, and dielectric measurements. A phase diagram between PFW and PT has been established. The diffuse phase transition temperature (T_max≈180 K) of PFW was found to continuously increase with the increasing amount of Ti⁴⁺ ions on the B-site. At the same time, the relaxor ferroelectric behavior of PFW is gradually transformed toward a normal ferroelectric state, as evidenced by sharp and nondispersive peaks of dielectric permittivity around T_C for x≥0.25. At room temperature, a transition from a cubic to a tetragonal phase takes place with x increased up to 0.25. A morphotropic phase boundary is located within the composition interval 0.25≤x≤0.35, which separates a pseudocubic (rhombohedral) phase from a tetragonal phase.     

Zr掺杂对正极材料Li(Ni0.9Co0.05Al0.05)O2的电化学性能影响

通过控制结晶法制备类球形Ni_(0.9)Co_(0.05)Al_(0.03)Zr_(0.02)(OH))2前驱体,与LiOH·H_2O均匀混合后,在750℃下于氧气中进行高温焙烧,最终合成正极材料Li(Ni_(0.9)Co_(0.05)Al_(0.05))O_2。扫描电子显微镜(SEM)结果显示前驱体及正极材料具有良好的形貌;X射线衍射(XRD)表明材料具有规整的六方单相层状α-Na FeO_2结构;能谱仪(EDXS)分析表明Zr元素在材料颗粒内部呈均匀分布。合成的Ni_(0.9)Co_(0.05)Al_(0.03)Zr_(0.02)O_2正极材料具有良好的电化学性能,在25℃,2.8~4.3 V充放电条件下,0.2C首次放电比容量为221.5 m Ah·g-1,充放电效率90.3%,2C倍率充放电条件下容量仍达到192.7 m Ah·g-1,100周循环后的容量保持率为92.2%。在55℃,2.8~4.3 V的高温充放电条件下,该材料的0.2C首次放电比容量可达236.2 m Ah·g-1,2C充放电倍率下循环100周容量保持率为85.1%。