Odd-even effects in charge transport across self-assembled monolayers

This paper compares charge transport across self-assembled monolayers (SAMs) of n-alkanethiols containing odd and even numbers of methylenes. Ultraflat template-stripped silver (Ag(TS)) surfaces support the SAMs, while top electrodes of eutectic gallium-indium (EGaIn) contact the SAMs to form metal/SAM//oxide/EGaIn junctions. The EGaIn spontaneously reacts with ambient oxygen to form a thin (～1 nm) oxide layer. This oxide layer enables EGaIn to maintain a stable, conical shape (convenient for forming microcontacts to SAMs) while retaining the ability to deform and flow upon contacting a hard surface. Conical electrodes of EGaIn conform (at least partially) to SAMs and generate high yields of working junctions. Ga(2)O(3)/EGaIn top electrodes enable the collection of statistically significant numbers of data in convenient periods of time. The observed difference in charge transport between n-alkanethiols with odd and even numbers of methylenes--the "odd-even effect"--is statistically discernible using these junctions and demonstrates that this technique is sensitive to small differences in the structure and properties of the SAM. Alkanethiols with an even number of methylenes exhibit the expected exponential decrease in current density, J, with increasing chain length, as do alkanethiols with an odd number of methylenes. This trend disappears, however, when the two data sets are analyzed together: alkanethiols with an even number of methylenes typically show higher J than homologous alkanethiols with an odd number of methylenes. The precision of the present measurements and the statistical power of the present analysis are only sufficient to identify, with statistical confidence, the difference between an odd and even number of methylenes with respect to J, but not with respect to the tunneling decay constant, β, or the pre-exponential factor, J(0). This paper includes a discussion of the possible origins of the odd-even effect but does not endorse a single explanation.     

A molecular half-wave rectifier

This paper describes the performance of junctions based on self-assembled monolayers (SAMs) as the functional element of a half-wave rectifier (a simple circuit that converts, or rectifies, an alternating current (AC) signal to a direct current (DC) signal). Junctions with SAMs of 11-(ferrocenyl)-1-undecanethiol or 11-(biferrocenyl)-1-undecanethiol on ultraflat, template-stripped Ag (Ag(TS)) bottom electrodes, and contacted by top electrodes of eutectic indium-gallium (EGaIn), rectified AC signals, while similar junctions based on SAMs of 1-undecanethiol-SAMs lacking the ferrocenyl terminal group-did not. SAMs in these AC circuits (operating at 50 Hz) remain stable over a larger window of applied bias than in DC circuits. AC measurements, therefore, can investigate charge transport in SAM-based junctions at magnitudes of bias inaccessible to DC measurements. For junctions with SAMs of alkanethiols, combining the results from AC and DC measurements identifies two regimes of bias with different mechanisms of charge transport: (i) low bias (|V| < 1.3 V), at which direct tunneling dominates, and (ii) high bias (|V| > 1.3 V), at which Fowler-Nordheim (FN) tunneling dominates. For junctions with SAMs terminated by Fc moieties, the transition to FN tunneling occurs at |V| ≈ 2.0 V. Furthermore, at sufficient forward bias (V > 0.5 V), hopping makes a significant contribution to charge transport and occurs in series with direct tunneling (V ? 2.0 V) until FN tunneling activates (V ? 2.0 V). Thus, for Fc-terminated SAMs at forward bias, three regimes are apparent: (i) direct tunneling (V = 0-0.5 V), (ii) hopping plus direct tunneling (V ≈ 0.5-2.0 V), and (iii) FN tunneling (V ? 2.0 V). Since hopping does not occur at reverse bias, only two regimes are present over the measured range of reverse bias. This difference in the mechanisms of charge transport at forward and reverse bias for junctions with Fc moieties resulted in large rectification ratios (R > 100) and enabled half-wave rectification.     

Replacing -CH2CH2- with -CONH- does not significantly change rates of charge transport through Ag(TS)-SAM//Ga2O3/EGaIn junctions

This paper describes physical-organic studies of charge transport by tunneling through self-assembled monolayers (SAMs), based on systematic variations of the structure of the molecules constituting the SAM. Replacing a -CH(2)CH(2)- group with a -CONH- group changes the dipole moment and polarizability of a portion of the molecule and has, in principle, the potential to change the rate of charge transport through the SAM. In practice, this substitution produces no significant change in the rate of charge transport across junctions of the structure Ag(TS)-S(CH(2))(m)X(CH(2))(n)H//Ga(2)O(3)/EGaIn (TS = template stripped, X = -CH(2)CH(2)- or -CONH-, and EGaIn = eutectic alloy of gallium and indium). Incorporation of the amide group does, however, increase the yields of working (non-shorting) junctions (when compared to n-alkanethiolates of the same length). These results suggest that synthetic schemes that combine a thiol group on one end of a molecule with a group, R, to be tested, on the other (e.g., HS~CONH~R) using an amide-based coupling provide practical routes to molecules useful in studies of molecular electronics.     

Fine-Tuning the Molecular Design for High-Performance Molecular Diodes Based on Pyridyl Isomers

Better control of molecule-electrode coupling (Γ) to minimize leakage current is an effective method to optimize the functionality of molecular diodes. Herein we embedded 5 isomers of phenypyridyl derivatives, each with an N atom placed at a different position, in two electrodes to fine-tune Γ between self-assembled monolayers (SAMs) and the top electrode of EGaIn (eutectic Ga−In terminating in Ga₂O₃). Combined with electrical tunnelling results, characterizations of electronic structures, single-level model fittings, and DFT calculations, we found that the values of Γ of SAMs formed by these isomers could be regulated by nearly 10 times, thereby contributing to the leakage current changing over about two orders of magnitude and switching the isomers from resistors to diodes with a rectification ratio (r⁺=|J(+1.5 V)/J(−1.5 V)|) exceeding 200. We demonstrated that the N atom placement can be chemically engineered to tune the resistive and rectifying properties of the molecular junctions, making it possible to convert molecular resistors into rectifiers. Our study provides fundamental insights into the role of isomerism in molecular electronics and offers a new avenue for designing functional molecular devices.     

Molecular tunnel junctions based on π-conjugated oligoacene thiols and dithiols between Ag, Au, and Pt contacts: effect of surface linking group and metal work function

The tunneling resistance and electronic structure of metal-molecule-metal junctions based on oligoacene (benzene, naphthalene, anthracene, and tetracene) thiol and dithiol molecules were measured and correlated using conducting probe atomic force microscopy (CP-AFM) in conjunction with ultraviolet photoelectron spectroscopy (UPS). Nanoscopic tunnel junctions (~10 nm(2)) were formed by contacting oligoacene self-assembled monolayers (SAMs) on flat Ag, Au, or Pt substrates with metalized AFM tips (Ag, Au, or Pt). The low bias (<0.2 V) junction resistance (R) increased exponentially with molecular length (s), i.e., R = R(0) exp(βs), where R(0) is the contact resistance and β is the tunneling attenuation factor. The R(0) values for oligoacene dithiols were 2 orders of magnitude less than those of oligoacene thiols. Likewise, the β value was 0.5 per ring (0.2 ?(-1)) for the dithiol series and 1.0 per ring (0.5 ?(-1)) for the monothiol series, demonstrating that β is not simply a characteristic of the molecular backbone but is strongly affected by the number of chemical (metal-S) contacts. R(0) decreased strongly as the contact work function (Φ) increased for both monothiol and dithiol junctions, whereas β was independent of Φ within error. This divergent behavior was explained in terms of the metal-S bond dipoles and the electronic structure of the junction; namely, β is independent of contact type because of weak Fermi level pinning (UPS revealed E(F) - E(HOMO) varied only weakly with Φ), but R(0) varies strongly with contact type because of the strong metal-S bond dipoles that are responsible for the Fermi level pinning. A previously published triple barrier model for molecular junctions was invoked to rationalize these results in which R(0) is determined by the contact barriers, which are proportional to the size of the interfacial bond dipoles, and β is determined by the bridge barrier, E(F) - E(HOMO). Current-voltage (I-V) characteristics obtained over a larger voltage range 0-1 V revealed a characteristic transition voltage V(trans) at which the current increased more sharply with voltage. V(trans) values were generally >0.5 V and were well correlated with the bridge barrier E(F) - E(HOMO). Overall, the combination of electronic structure determination by UPS with length- and work function-dependent transport measurements provides a remarkably comprehensive picture of tunneling transport in molecular junctions based on oligoacenes.     

Contact resistance in metal-molecule-metal junctions based on aliphatic SAMs: effects of surface linker and metal work function

Using conducting probe atomic force microscopy (CP-AFM), we have formed molecular tunnel junctions consisting of alkanethiols and alkane isonitrile self-assembled monolayers sandwiched between gold, platinum, silver, and palladium contacts. We have measured the resistance of these junctions at low bias (dV/dI |V=0) as a function of alkane chain length. Extrapolation to zero chain length gives the contact resistance, R0 . R0 is strongly dependent on the type of metal used for the contacts and decreases with increasing metal work function; that is, R0,Ag > R0,Au > R0,Pd > R0,Pt. R0 is approximately 10% smaller for Au junctions with isonitrile versus thiol surface linkers. We conclude that the Fermi level of the junction lies much closer to the HOMO than to the LUMO.     

Electrochemical fabrication of metal/organic/metal junctions for molecular electronics and sensing applications

A simple electrochemical approach was used for fabricating electrode/metal nanowire/(molecule or polymer)/electrode junctions for sensing or molecular electronics applications. The procedure for fabricating these molecule-based devices involves electropolymerization of phenol or chemisorption of alkanethiols on one set of electrodes (E1) and electrodeposition of Ag metal nano/microwires on a second electrode (E2) which is ～5 μm away from E1. Under appropriate deposition conditions, Ag nanowires grow from E2 and cross over to E1, forming a E1/(molecule or polymer)/Ag nanowire (NW)/E2 junction. The junction resistance was controlled by (1) electrodepositing polyphenol of varied densities on E1 and (2) assembling alkanethiols of different chain lengths on E1. Ag NWs at high resistance E1/polyphenol/Ag NW/E2 junctions functionalized with Pd monolayer protected clusters (MPCs) responded fast and reversibly to H(2) concentrations as low as 0.11% in a nitrogen carrier gas by a resistance decrease, likely due to volume expansion of the Pd nanoparticles, demonstrating the use of these electrochemically fabricated junctions for gas sensing applications.     

Evidence for quantum interference in SAMs of arylethynylene thiolates in tunneling junctions with eutectic Ga-In (EGaIn) top-contacts

This paper compares the current density (J) versus applied bias (V) of self-assembled monolayers (SAMs) of three different ethynylthiophenol-functionalized anthracene derivatives of approximately the same thickness with linear-conjugation (AC), cross-conjugation (AQ), and broken-conjugation (AH) using liquid eutectic Ga-In (EGaIn) supporting a native skin (~1 nm thick) of Ga(2)O(3) as a nondamaging, conformal top-contact. This skin imparts non-Newtonian rheological properties that distinguish EGaIn from other top-contacts; however, it may also have limited the maximum values of J observed for AC. The measured values of J for AH and AQ are not significantly different (J ≈ 10(-1)A/cm(2) at V = 0.4 V). For AC, however, J is 1 (using log averages) or 2 (using Gaussian fits) orders of magnitude higher than for AH and AQ. These values are in good qualitative agreement with gDFTB calculations on single AC, AQ, and AH molecules chemisorbed between Au contacts that predict currents, I, that are 2 orders of magnitude higher for AC than for AH at 0 < |V| < 0.4 V. The calculations predict a higher value of I for AQ than for AH; however, the magnitude is highly dependent on the position of the Fermi energy, which cannot be calculated precisely. In this sense, the theoretical predictions and experimental conclusions agree that linearly conjugated AC is significantly more conductive than either cross-conjugated AQ or broken conjugate AH and that AQ and AH cannot necessarily be easily differentiated from each other. These observations are ascribed to quantum interference effects. The agreement between the theoretical predictions on single molecules and the measurements on SAMs suggest that molecule-molecule interactions do not play a significant role in the transport properties of AC, AQ, and AH.     

Anodization in oligo(ethylene glycol) as an initial derivatization tool for preparing glassy carbon electrodes covalently modified with amino compounds: effective access to a 2,2,6,6-tetramethylpiperidinyl-1-oxyl (TEMPO)-modified glassy carbon electrode

Anodization in HO(CH2CH2O)nH (1a, n=2; 1b, n=3; 1c, n=4) as an initial derivatization tool for preparing glassy carbon (GC) electrodes covalently modified with amino compounds was explored. As an amino compound to be immobilized, 4-amino-2,2,6,6-tetramethylpiperidinyl-1-oxyl (4-amino-TEMPO) was selected. When GC electrodes anodized at 2.0 V vs. Ag wire coated with AgCl in 1 containing RCH2CH2SO3Na (2a, R=H; 2b, R=OH) were treated with a N,N-dimethylformamide (DMF) or CH2Cl2 solution of 4-amino-TEMPO and 1,3-dicyclohexylcarbodiimide (DCC), TEMPO-modified GC electrodes were afforded. Coverage (gammaTEMPO) of the electrode surfaces by TEMPO was estimated by cyclic voltammetry in CH3CN containing NaClO4. A TEMPO-modified GC electrode with the best gammaTEMPO (1.36 x 10(-10) mol/cm2) was obtained by anodization in 1b containing 2a at the expense of 3.0 C followed by amidization in DMF for 7 d. On cyclic voltammetry, the TEMPO-modified GC electrode showed good and stable electrocatalytic ability for oxidation of allyl alcohol in the presence of 2,6-lutidine.     

New metalloligands [M(SC[O]Ph)(4)](-): synthesis and characterization of polymeric [A(MeCN)(x)[M(SC[O]Ph)(4)]] compounds (A = Li,Na and K; M = Ga and In; x = 0-2)

Exploiting the ability of the [M(SC[O]Ph)(4)](-) anion to behave like an anionic metalloligand, we have synthesized [Li[Ga(SC[O]Ph)(4)]] (1), [Li[In(SC[O]Ph)(4)]] (2), [Na[Ga(SC[O]Ph)(4)]] (3), [Na(MeCN)[In(SC[O]Ph)(4)]] (4), [K[Ga(SC[O]Ph)(4)]] (5), and [K(MeCN)(2)[In(SC[O]Ph)(4)]] (6) by reacting MX(3) and PhC[O]S(-)A(+) (M = Ga(III) and In(III); X = Cl(-) and NO(3)(-); and A = Li(I), Na(I), and K(I)) in the molar ratio 1:4. The structures of 2, 4, and 6 determined by X-ray crystallography indicate that they have a one-dimensional coordination polymeric structure, and structural variations may be attributed to the change in the alkali metal ion from Li(I) to Na(I) to K(I). Crystal data for 2 x 0.5MeCN x 0.25H(2)O: monoclinic space group C2/c, a = 24.5766(8) A, b = 13.2758(5) A, c = 19.9983(8) A, beta = 108.426(1) degrees, Z = 8, and V = 6190.4(4) A(3). Crystal data for 4: monoclinic space group P2(1)/c, a = 10.5774(7) A, b = 21.9723(15) A, c = 14.4196(10) A, beta = 110.121(1) degrees, Z = 4, and V = 3146.7(4) A(3). Crystal data for 6: monoclinic space group P2(1)/c, a = 12.307(3) A, b = 13.672(3) A, c = 20.575(4) A, beta = 92.356(4) degrees, Z = 4, and V = 3458.8(12) A(3). The thermal decomposition of these compounds indicated the formation of the corresponding AMS(2) materials.     

Preparation and electrical properties of ultrafine Ga2O3 nanowires

Uniform and well-crystallized beta-Ga2O3 nanowires are prepared by reacting metal Ga with water vapor based on the vapor-liquid-solid (VLS) mechanism. Electron microscopy studies show that the nanowires have diameters ranging from 10 to 40 nm and lengths up to tens of micrometers. The contact properties of individual Ga2O3 nanowires with Pt or Au/Ti electrodes are studied, respectively, finding that Pt can form Schottky-barrier junctions and Au/Ti is advantageous to fabricate ohmic contacts with individual Ga2O3 nanowires. In ambient air, the conductivity of the Ga2O3 nanowires is about 1 (Omega.m)-1, while with adsorption of NH3 (or NO2) molecules, the conductivity can increase (or decrease) dramatically at room temperature. The as-grown Ga2O3 nanowires have the properties of an n-type semiconductor.     

Numerical investigation of a hybrid-connection four-junction solar cell structure based on detailed balance calculation

On the basis of the detailed balance limit model, we calculated limiting efficiency, optimum bandgap energy combination, current density–voltage (J–V) characteristics, and theoretical efficiency for the candidate combination of materials GaInN/GaInP/Ga(In)As/Ge and the thermalization loss of a hybrid-connection four-junction (HC4J) solar cell structure to investigate its theoretical characteristics. Instead of the three-tunnel junctions and series-connection between subcells in a conventional four-junction solar cell, HC4J has two tunnel junctions only, with one junction having been replaced by a transparent electrode. The transparent electrode connects the topmost subcells with the top subcell. The theoretical optimum bandgap combination and the limiting efficiency of HC4J are 3.19/1.77/1.19/0.70 eV and 52.1 %, respectively. To assess the feasibility of the structure, theoretical J–V characteristics were evaluated for GaInN/GaInP/Ga(In)As/Ge with associated bandgap energies 3.20/1.87/1.22/0.7 eV. The open-circuit voltage and short-circuit current were 2.87 V and 17.18 mA/cm², respectively. Thermalization loss was also calculated for the candidate materials .     

Orbital interaction mechanisms of conductance enhancement and rectification by dithiocarboxylate anchoring group

We study computationally the electron transport properties of dithiocarboxylate terminated molecular junctions. Transport properties are computed self-consistently within density functional theory and nonequilibrium Green's functions formalism. A microscopic origin of the experimentally observed current amplification by dithiocarboxylate anchoring groups is established. For the 4,4'-biphenyl bis(dithiocarboxylate) junction, we find that the interaction of the lowest unoccupied molecular orbital (LUMO) of the dithiocarboxylate anchoring group with LUMO and highest occupied molecular orbital (HOMO) of the biphenyl part results in bonding and antibonding resonances in the transmission spectrum in the vicinity of the electrode Fermi energy. A new microscopic mechanism of rectification is predicted based on the electronic structure of asymmetrical anchoring groups. We show that the peaks in the transmission spectra of 4'-thiolato-biphenyl-4-dithiocarboxylate junction respond differently to the applied voltage. Depending upon the origin of a transmission resonance in the orbital interaction picture, its energy can be shifted along with the chemical potential of the electrode to which the molecule is more strongly or more weakly coupled.     

Molecular rectification and conductance switching in carbon-based molecular junctions by structural rearrangement accompanying electron injection

Molecular junctions were fabricated consisting of a 3.7 nm thick layer of nitroazobenzene (NAB) molecules between a pyrolyzed photoresist substrate (PPF) and a titanium top contact which was protected from oxidation by a layer of gold. Raman spectroscopy, XPS, and AFM revealed that the NAB layer was 2-3 molecules thick and was bonded to the two conducting contacts by C-C and N-Ti covalent bonds. The current/voltage behavior of the PPF/NAB(3.7)/Ti junctions showed strong and reproducible rectification, with the current at +2 V exceeding that at -2 V by a factor of 600. The observed current density at +3 V was 0.71 A/cm(2), or about 10(5) e(-)/s/molecule. The i/V response was strongly dependent on temperature and scan rate, with the rectification ratio decreasing for lower temperature and faster scans. Junction conductivity increased with time over several seconds at room temperature in response to positive voltage pulses, with the rate of increase larger for more positive potentials. Voltage pulses to positive potentials and back to zero volts revealed that electrons are injected from the Ti to the NAB, to the extent of about 0.1-1 e(-)/molecule for a +3 V pulse. These electrons cause an activated transition of the NAB into a more conductive quinoid state, which in turn causes an increase in conductivity. The transition to the quinoid state involves nuclear rearrangement which occurs on a submillisecond to several second time scale, depending on the voltage applied. The quinoid state is stable as long as the applied electric field is present, but reverts back to NAB within several minutes after the field is relaxed. The results are interpreted in terms of a thermally activated, potential dependent electron transfer into the 3.7 nm NAB layer, which brings about a conductivity increase of several orders of magnitude.     

Impact of Top Electrodes (Cu,Ag, and Al) on Resistive Switching behaviour of Cu-rich Cu2ZnSnS4 (CZTS) Ideal Kesterite

Cu₂ZnSnS₄ (CZTS) active material-based resistive random-access memory (RRAM) devices are investigated to understand the impact of three different Cu, Ag, and Al top electrodes. The dual resistance switching (RS) behaviour of spin coated CZTS on ITO/Glass is investigated up to 10² cycles. The stability of all the devices (Cu/CZTS/ITO, Ag/CZTS/ITO, and Al/CZTS/ITO) is investigated up to 10³ sec in low- (LRS) and high- (HRS) resistance states at 0.2 V read voltage. The endurance up to 10² cycles with 30 msec switching width shows stable write and erase current. Weibull cumulative distribution plots suggest that Ag top electrode is relatively more stable for set and reset state with 33.61 and 25.02 shape factors, respectively. The charge carrier transportation is explained by double logarithmic plots, Schottky emission plots, and band diagrams, substantiating that at lower applied electric field intrinsic copper ions dominate in Cu/CZTS/ITO, whereas, at higher electric filed, top electrodes (Cu and Ag) dominate over intrinsic copper ions. Intrinsic Cu⁺ in CZTS plays a decisive role in resistive switching with Al electrode. Further, the impedance spectroscopy measurements suggest that Cu⁺ and Ag⁺ diffusion is the main source for the resistive switching with Cu and Ag electrodes.     

Iron wheels on silicon: wetting behavior and electronic structure of adsorbed organostannoxane clusters

Atomic force microscopy and synchrotron radiation (SR) spectroscopy have been used to study the wetting behavior and electronic structure of thin films of a novel organometallic cluster--[BuSn(O)OC(O)Fc]6 ("Fc" = ferrocenyl)--on silicon substrates. This cluster comprises six ferrocene units connected to a stannoxane central core--"an iron wheel on a tin drum" (V. Chandrasekhar; et al. Angew. Chem., Int. Ed. 2000, 39, 1833). Thin films spin-cast onto native oxide-terminated silicon readily dewet the substrate. We have utilized advanced image analysis techniques based on Minkowski functionals to provide a detailed quantitative analysis of the morphology of the stannoxane overlayers. This analysis shows that the dewetting patterns are rather far removed from those expected to arise from a simple Poisson distribution of centers, and we discuss the implications of this finding in terms of nucleated and spinodal dewetting. Variations in both the surface roughness and the in-plane correlation length have been followed as a function of annealing time to probe the surface dewetting dynamics. SR valence band photoemission illustrates that the highest occupied molecular orbital (HOMO) of the cluster is found 2 eV below the Fermi level. Fe 2p --> 3d and Sn 3d --> 5p resonant photoemission spectroscopy have been used to enhance the cross sections of the partial density of states associated with the Fe and Sn atoms. Sn atoms make a large contribution to the HOMO of the cluster, whereas the Fe atoms are associated with an electronic environment seemingly very similar to that in the "parent" ferrocene molecule.     

Tuning the HOMO energy levels of organic dyes for dye-sensitized solar cells based on Br-/Br3- electrolytes

A series of novel metal-free organic dyes TC301-TC310 with relatively high HOMO levels were synthesized and applied in dye-sensitized solar cells (DSCs) based on electrolytes that contain Br(-)/Br(3)(-) and I(-)/I(3)(-). The effects of additive Li(+) ions and the HOMO levels of the dyes have an important influence on properties of the dyes and performance of DSCs. The addition of Li(+) ions in electrolytes can broaden the absorption spectra of the dyes on TiO(2) films and shift both the LUMO levels of the dyes and the conduction band of TiO(2), thus leading to the increase of J(sc) and the decrease of V(oc). Upon using Br(-)/Br(3)(-) instead of I(-)/I(3)(-), a large increase of V(oc) is attributed to the enlarged energy difference between the redox potentials of electrolyte and the Fermi level of TiO(2), as well as the suppressed electron recombination. Incident photon to current efficiency (IPCE) action spectra, electrochemical impedance spectra, and nanosecond laser transient absorption reveal that both the electron collection yields and the dye regeneration yields (Φ(r)) depend on the potential difference (the driving forces) between the oxidized dyes and the Br(-)/Br(3)(-) redox couple. For the dyes for which the HOMO levels are more positive than the redox potential of Br(-)/Br(3)(-) sufficient driving forces lead to the longer effective electron-diffusion lengths and almost the same efficient dye regenerations, whereas for the dyes for which the HOMO levels are similar to the redox potential of Br(-)/Br(3)(-), insufficient driving forces lead to shorter effective electron-diffusion lengths and inefficient dye regenerations.     

Dissociative addition of water to a main group 13 metal cluster: computational study of the reaction of gallium dimer with H2O

We have investigated the lowest triplet and singlet potential energy surfaces (PESs) for the reaction of Ga(2) dimer with water. Under thermal conditions, we predict formation of the triplet ground state addition complex Ga(2)···OH(2)((3)B(1)) involving Ga···O···Ga bridge interaction. At the coupled cluster CCSD(T)/AE (CCSD(T)/ECP) computational levels, Ga(2)···OH(2)((3)B(1)) is bound by 5.5 (5.7) kcal/mol with respect to the ground state reactants Ga(2)((3)Π(u)) + H(2)O. Identification of the addition complex is in agreement with the experimental evidence from matrix isolation infrared (IR) spectroscopy reported recently by Macrae and Downs. The located minimum energy crossing points (MECPs) between the triplet and singlet energy surfaces on the entrance channel of Ga(2) + H(2)O are not expected to be energetically accessible under the matrix conditions, consistent with the lack of occurrence of Ga(2) insertion into the O-H bond under such conditions. The computed energies and harmonic and anharmonic vibrational frequencies for the triplet and singlet Ga(2)(H)(OH) insertion isomers indicate the singlet double-bridged Ga(μ-H)(μ-OH)Ga isomer to be the most stable and support the experimental IR identification of this species. The energy barrier for elimination of H(2) from the second most stable singlet HGa(μ-OH)Ga insertion isomer found to be 13.9 (12.9) kcal/mol is also consistent with the available experimental data.     

Junction studies on electrochemically fabricated p-n Cu(2)O homojunction solar cells for efficiency enhancement

p-n Cu(2)O homojunction solar cells were electrochemically fabricated by consecutively depositing an n-Cu(2)O layer on a p-Cu(2)O layer. In order to better understand the Fermi levels of the electrochemically grown polycrystalline p- and n-Cu(2)O layers and maximize the overall cell performance, the back and front contacts of the Cu(2)O homojunction cells were systematically changed and the I-V characteristics of the resulting cells were examined. The result shows that the intrinsic doping levels of the electrochemically prepared p-Cu(2)O and n-Cu(2)O layers are very low and they made almost Ohmic junctions with Cu metal with which previously studied p-Cu(2)O layers prepared by thermal oxidation of Cu foils are known to form Schottky junctions. The best cell performance (an η of 1.06%, a V(OC) of 0.621 V, an I(SC) of 4.07 mA cm(-2), and a fill factor (ff) of 42%) was obtained when the p-Cu(2)O layer was deposited on a commercially available ITO substrate as the back contact and a sputter deposited ITO layer was used as the front contact on the n-Cu(2)O layer. The unique features of the p-n Cu(2)O homojunction solar cell are discussed in comparison with other Cu(2)O-based heterojunction solar cells.     

Size-dependent charge collection in junctions containing single-size and multi-size arrays of colloidal CdSe quantum dots

This paper describes the electrical characteristics of junctions composed of three-dimensional arrays of colloidal CdSe quantum dots (QDs) with tin-doped indium oxide (ITO)/poly(3,4-ethylenedioxy-thiophene):poly(styrenesulfonate) (PEDOT:PSS) and eutectic Ga-In (EGaIn) electrodes. It focuses on a comparison of junctions containing QDs of one size to those of arrays containing QDs of multiple sizes. This comparison makes it possible to estimate the relative contributions of transport across various interfaces (e.g., between the QDs and between the QDs and the electrodes) to the observed electrical characteristics of the junction and to evaluate the dependence of these contributions on the locations of various sizes of QDs within the junction. The junctions were diodes, and their turn-on voltage depended on the size of the QDs next to the PEDOT:PSS. We describe this dependence using a Marcus model to estimate the barrier for charge transfer induced by the difference in energies between the orbitals of the QDs and the valence band of PEDOT:PSS.