Er~(3+)、Pr~(3+)共掺杂AlN薄膜的发光特性和能量传递机理

采用离子注入的方法在氮化铝(AlN)薄膜中实现Er~(3+)和Pr~(3+)的共掺杂,以阴极荧光光谱仪为主要表征手段,对其发光特性进行研究.对于Er~(3+)单掺杂的AlN薄膜,在410nm和480nm可以观察到Er~(3+)较强的发光峰,在537nm、560nm、771nm和819nm可观察到Er~(3+)的较弱的发光峰;对于Pr~(3+)单掺杂的AlN薄膜,Pr~(3+)的最强发光峰位于528nm,在657nm和675nm可以观察到Pr~(3+)的较弱的发光峰;而对于Er~(3+)和Pr~(3+)共掺杂的AlN薄膜,在494nm观察到与Pr~(3+)相关的新跃迁峰.根据实验现象,对AlN薄膜中Er~(3+)和Pr~(3+)之间的能量传递机制进行了深入分析,结果表明Er~(3+)的4F7/2→4I15/2能级跃迁与Pr~(3+)的3P0→3H4能级跃迁之间发生了共振能量传递,从而使Pr~(3+)产生了494nm新的发光峰.     

离子交换铒掺杂硅酸盐玻璃波导光放大特性

将集成光学放大器用于光纤通信系统中是人们越来越感兴趣的课题，由此导致人们寻找与此相适应的稀土掺杂玻璃材料。给出了一系列Er^3 ／Yb^3 共掺杂硅酸盐玻璃波导的制备和光谱特性的基本结果。平面和条型波导均由Ag^ -Na^ 离子交换技术制备。光谱测量显示，所有样品在1532nm都观测到了荧光发射峰．其半高谱宽为19nm。用波长为514．5nm和980nm的激光抽运，测得多数样品中Er^3 离子在亚稳态^4I13.2能级上的荧光寿命均为7ms左右。Er^3 ／Yb^3 共掺杂玻璃的上转换均低于单掺Er^3 玻璃。用250mW，波长为980nm的激光抽运3．5cm长的条形波导，在1536nm波段下得到的最大净增益是5dB，增益谱的半峰全宽是14nm。     

Er3+/Tm3+共掺碲酸盐玻璃光谱特性及能量传递

采用高温熔融法制备了两系列不同掺杂比的Er³⁺/Tm³⁺共掺的碲酸盐玻璃,测试了样品的吸收光谱和在980 nm LD激发下的发光光谱、上转换发光光谱及发光寿命。讨论了Er³⁺与Tm³⁺掺杂浓度对样品光谱性质的影响,Tm³⁺离子的掺入会减弱Er³⁺的1.53 μm发光强度,但通过共振能量传递可以获得Tm³⁺的1.8 μm发光,并随着Tm³⁺离子浓度的增加而增强。同时表明Tm³⁺离子的增加会减弱Er³⁺离子在528 nm和545 nm附近的上转换绿光强度,而上转换红光出现了先增强后减弱的现象。研究了Er³⁺/Tm³⁺共掺杂碲酸盐玻璃的能量传递机制与传递效率,分析了Tm³⁺/Er³⁺离子掺杂浓度比对上转换发光的影响。     

Enhanced emission of 2.7 μm pumped by laser diode from Er3+/Pr(3+)-codoped germanate glasses

A novel Er(3+)/Pr(3+) codoped germanate glass was fabricated and analyzed. Efficient emission at 2.7 μm from the glass was observed upon excitation of a conventional 980 nm laser diode. The 2.7 μm emission characteristics and energy transfer (ET) were investigated. Population inversions between ?I(13/2) and ?I(11/2) levels have been achieved, and an enhanced emission from 2550 to 2800 nm was obtained. Large ET efficiency of 95% indicates that the ET process from Er(3+) to Pr(3+) (?I(13/2), 3H?)→(?I(15/2), 3F?) is efficient and that Pr(3+) can enhance the emission of 2.7 μm by quenching the lower laser level of Er(3+) via ET.     

980nm激光激发下Er3+和Yb3+共掺杂氟氧玻璃的上转换发光

制备了一种新型的上转换发光材料,它不仅具有较高的上转换发光效率,而且还避免了氟化物基质的缺点。其组分为58.52%PbF₂-34.43% GeO₂-3% Al₂O₃-0.05% Er₂O₃-4%Yb₂O₃,其中GeO₂为玻璃形成体氧化物,PbF₂和Al₂O₃为调整剂,以共掺杂Er³⁺和Yb³⁺离子为上转换研究的对象。测量了该玻璃系统在980nm半导体激光器激发下的上转换发光光谱,观察到很强的658nm的红光和548,526nm的绿光,而且红光的发射强度远远强于绿光。通过对上转换发光强度与激发强度关系曲线的拟合,表明此材料的绿光发射和红光发射都为双光子过程。研究了激发光的工作电流与上转换荧光强度的关系,讨论了其上转换发光特性。     

Quantum cutting effect and photoluminescence emission at about 1,000 nm from Er–Yb co-doped ZnO nanoplates prepared by wet chemical precipitation method

ZnO nanoplates with Er-doping concentrations varying in the range from 3 to 7 wt% and co-doped with (Er–Yb) (7 + 7 wt%) were successfully prepared by wet chemical precipitation method. The effects of doping on the structural and optical properties of ZnO nanostructures have been systematically investigated. The structural morphology of the prepared nanostructures was found to change with increasing Er-doping concentrations. The visible photoluminescence and infrared photoluminescence of the prepared nanostructures were measured at room temperature. The intensity of visible emission spectra was found to increase with increasing Er-doping concentrations and was further enhanced for (Er–Yb) co-doped ZnO nanoplate samples. Additionally, Er-doped (7 wt%) and Yb-doped (7 wt%) ZnO nanoplates showed an enhanced emission peak at 950 nm, whereas two enhanced emission peaks at 950 and 980 nm have been found for (Er–Yb)-co-doped (7 + 7 wt%) ZnO nanoplates samples when excited at 310, 365 and 371 nm excitation wavelengths.     

掺铒、镱铒共掺杂硅酸盐玻璃光致发光强度随泵浦波长的变化

利用半导体激光器的红移特性,测量了掺饵、镱铒共掺杂硅酸盐玻璃样品的光致发光强度随泵浦波长的变化。实验结果表明,掺铒硅酸盐玻璃样品的最佳泵浦波长为981.6nm,镱铒共掺杂硅酸盐玻璃样品的最佳泵浦波长为972.1nm;两种样品的-3dB带宽分别为3 6nm和7.4nm。     

Er3+/Yb3+共掺TeO2-Li2O-B2O3-GeO2玻璃系统的光谱性质和热稳定性研究

制备了Er³⁺/Yb³⁺共掺的70TeO₂-5Li₂O-(25-x)B₂O₃-xGeO₂（x=0,5,10,15,20 mol%）系列玻璃, 研究了玻璃的热稳定性能, 测试了玻璃的吸收光谱、荧光光谱以及Er3+离子4I13/2能级荧光寿命, 并根据McCumber理论计算了Er³⁺离子4I13/2→4I15/2跃迁的受激发射截面. 结果表明：随着GeO₂含量的增加, 玻璃的热稳定性逐渐提高, 荧光谱线半高宽（FWHM）保持在70 nm左右, 而荧光强度和Er3+离子4I13/2能级荧光寿命逐渐提高, 研究表明这种玻璃系统是一种具有应用潜能的宽带光纤放大器用的基质材料.     

室温下掺Er富硅氧化硅和掺Er富硅氮化硅的光致发光及其退火

用磁控溅射淀积掺Er氧化硅、掺Er富硅氧化硅、掺Er氮化硅和掺Er富硅氮化硅薄膜,室温下测量这四种薄膜的光致发光（PL）谱,观察到这四种薄膜都具有1.54μm的峰位,其强度与薄膜的退火温度有关。为了确定1.54μmPL的最佳退火温度,这些薄膜都分别在600,700,800,900,1000,1100℃的温度下同时退火,发现两种富硅薄膜的最佳退火温度是800℃,不富硅的两种薄膜的最佳退火温度是900℃。样品的1.54μmPL最强,且800℃退火的掺Er富硅氧化硅薄膜的1.54μm峰强度是最强的,比不富硅的强了约20倍,还观察到这四种薄膜都具有1.38μm的PL带,且掺Er富硅氧化硅和掺Er富硅氮化硅这两种薄膜的PL在强度上1.38μm峰与1.54μm峰有一定的关系。     

1.54 μm emission mechanism of Er-doped zinc oxide thin films

Zinc oxide (ZnO) and Er-doped zinc oxide (ZnO:Er) thin films were formed by pulsed laser deposition, and characterized by photoluminescence (PL) and X-ray diffraction (XRD) in order to clarify the 1.54 μm emission mechanism in the ZnO:Er films. Er ions were excited indirectly by the 325 nm line of a He-Cd laser, and the comparison of the ultraviolet to infrared PL data of ZnO and ZnO:Er films showed that the 1.54 μm emission of Er³⁺ in ZnO:Er film appears at the expense of the band edge emission and the defect emission of ZnO. The crystallinity of the films was varied with the substrate temperature and post-annealing, and it was found that the intensity of the 1.54 μm emission is strongly related with the crystallinity of the films. There are three processes leading to the 1.54 μm emission; absorption of excitation energy by the ZnO host, energy transfer from ZnO to Er ions, and radiative relaxation inside Er ions, and it is suggested that the crystallinity plays an important role in the first two processes.     

Enhanced field emission from Si doped nanocrystalline AlN thin films

Si doped and undoped nanocrystalline aluminum nitride thin films were deposited on various substrates by direct current sputtering technique. X-ray diffraction analysis confirmed the formation of phase pure hexagonal aluminum nitride with a single peak corresponding to (1 0 0) reflection of AlN with lattice constants, a = 0.3114 nm and c = 0.4986 nm. Energy dispersive analysis of X-rays confirmed the presence of Si in the doped AlN films. Atomic force microscopic studies showed that the average particle size of the film prepared at substrate temperature 200 °C was 9.5 nm, but when 5 at.% Si was incorporated the average particle size increased to ∼21 nm. Field emission study indicated that, with increasing Si doping concentration, the emission characteristics have been improved. The turn-on field (E_to) was 15.0 (±0.7) V/μm, 8.0 (±0.4) V/μm and 7.8 (±0.5) V/μm for undoped, 3 at.% and 5 at.% Si doped AlN films respectively and the maximum current density of 0.27 μA/cm² has been observed for 5 at.% Si doped nanocrystalline AlN film. It was also found that the dielectric properties were highly dependent on Si doping.     

氮化铝铬的制备及其光学性质

利用直接氮化法得到了氮化铝和氮化铬,并用两种途径得到Cr³⁺掺杂的氮化铝样品。用X射线衍射仪分析了样品晶相并测试了两种样品的激发和发射光谱,计算了晶体场劈裂参数D_q和Racah参数B及D_q/B分别为1 800,693.69和2.59。光谱数据表明,Cr³⁺在氮化铝中属于强场环境,光发射来自于最低激发态²E能级,与在氧化铝中的环境相似。根据光谱数据给出了Cr³⁺在氮化铝晶体场中的能级。     

Study of field emission and dielectric properties of AlN films prepared by DC sputtering technique at different substrate temperatures

Nanocrystalline AlN thin films were prepared via DC sputtering technique at different substrate temperature. The crystal orientation and particle size of aluminum nitride thin films were investigated by XRD analysis. Study indicated that the sample contained pure phase hexagonal AlN nanoparticles with a single peak corresponding to the (100) planes. The peak at 665 cm⁻¹ in the FTIR spectrum of film was assigned to the LO phonon of hexagonal AlN. The particle size of the film, prepared at substrate temperature 200°C was about 9.5 nm, as investigated by atomic force microscope. Field emission study indicated that it can be used as a good field emitter. Turn-on field (E_to) of 15.02 V/μm was observed for the AlN films synthesized at substrate temperature 200°C. Dielectric constant of the AlN film was found nearly independent of frequencies in the measured frequency range 1 KHz to 1 MHz, i.e. in the audio frequency range. The values of dielectric constant (ε) were 10.07, 9.46 and 8.65 for the film prepared at 70°C, 150°C and 200°C, respectively, at frequency 1 KHz.     

Investigation of up-conversion luminescence properties of RE/Yb co-doped Y2O3 transparent ceramic (RE=Er, Ho, Pr, and Tm)

RE/Yb co-doped Y₂O₃ transparent ceramics (RE=Er, Ho, Pr, Tm) were fabricated and characterized from the point of up-conversion luminescence. All the samples exhibit high transparence not only in near-infrared band (NIR) band but also in visible region, which ensures the output of the up-conversion luminescence. Under 980 nm excitation, green and red emissions were observed in Er, Yb:Y₂O₃ transparent ceramic, while green emission was detected in Ho, Yb and Pr, Yb co-doped Y₂O₃ transparent ceramics. In Tm, Yb co-doped Y₂O₃ ceramic, very intense blue up-conversion luminescence was detected. The dependence of up-conversion emission intensity on the pumping power was measured for each RE/Yb co-doped Y₂O₃ transparent ceramic, and the up-conversion mechanism was discussed in detail. Meanwhile, the energy transfer efficiency was calculated.     

Photoluminescence and its time evolution of AlN thin films

We report the room temperature photoluminescence measurements of AlN thin films stimulated by above-band-gap pulsed light excitation. Two AlN thin films with different composition and structure were studied. One AlN film, prepared by pulsed laser deposition from sintered aluminum nitride ceramic target, contains oxide impurities. The other one, prepared by plasma assisted reactive pulsed laser deposition from pure aluminum metal target, is composed of pure AlN compound. Upon the irradiation of the samples by 193 nm excimer laser pulses, both the as-grown AlN thin films luminesce in the ultraviolet and the green regions, peaked at 440 and 400 nm, respectively. We also examined the time evolution of the luminescence and found that the entire broad luminescence band decays non-exponentially at approximately the same rate.     

溶胶-凝胶(sol-gel)法制作掺铒Al2O3薄膜及其光致发光光谱特性测量

介绍一种用溶胶-凝胶方法制作掺铒Al₂O₃薄膜的工艺.实验测量了薄膜样品的光致发光光谱特性.结果表明光致发光光谱的峰值波长为1.536 μm,半值宽度为34 nm;同时测量了光致发光光谱的峰值强度与泵浦功率、掺铒浓度及退火温度之间的关系.     

Y3Al5O12:Ce3+,Cr3+和Y3Al5O12:Ce3+,pr3+,Cr3+荧光粉体系中的能量传递

通过在YAG:Ce3+和YAG:Ce3+,pr3+荧光粉体系中分别掺入Cr3+离子来提高蓝光管芯白光LED的显色指数.Cr3+离子的加入,增加了红光发射,这归因于Cr3+的2E-4 A2跃迁的零声子线和声子边带发光.Ce3+→Cr3+的能量传递是增强红光发射的重要方式,在YAG:Ce3+,Cr3+体系中,由发射光谱得到...     

Enhanced green upconversion emission of Er(3+) through energy transfer by Dy(3+) under 800 nm femtosecond-laser excitation

Er(3+) green upconversion (UC) emission corresponding to the transition of (4)S(3/2) ((2)H(11/2))-->(4)I(15/2) is enhanced in a Er/Dy-codoped LiNbO(3) crystal compared with Er-doped LiNbO(3) under 800 nm femtosecond-laser excitation at room temperature. The upconversion mechanisms are proposed based on spectral, kinetic, and pump-power dependence analyses. The energy-transfer efficiency from Dy(3+)((4)F(9/2)) to Er(3+)((4)F(7/2)) is 33%, which results in the enhancement of green UC emission. This energy transfer is advantageous for the Er(3+) UC emission sensitized by Dy(3+), especially in a low-phonon-energy host matrix.     

Er掺杂和Er/Yb双掺杂光电陶瓷PLZT的上转换发光

研究了Er掺杂和Er/Yb双掺杂的锆钛酸铅(PLZT)光电陶瓷的上转换发光特性,观测到Er掺杂的PLZT样品在540,566nm附近的绿色发光峰,且随着掺杂浓度的增大而增强;Er/Yb双掺杂的PLZT样品除540,566nm附近处的绿色发光峰外,还有一个较弱的668nm的红色发光峰。另外,上转换发光强度与激发强度的对数关系曲线表明样品的绿光发射和红光发射皆为双光子过程,并且利用喇曼光谱进一步分析讨论了其上转换发光的机制。实验和理论分析表明该材料有望制成电光调Q的双功能上转换激光器件。     

Y共掺对掺Er硅酸盐玻璃光致荧光及荧光寿命的影响

采用固相反应方法制备了Er/Y共掺激光玻璃，其中Er³⁺浓度分别为0.5at%和1.0at%，所对应的Y³⁺浓度的变化范围分别为0.0at%—2.5at%和0.0at%—5.0at%.通过吸收光谱、瞬态和稳态光致发光光谱测量，研究了Y共掺对Er³⁺吸收截面、发射截面、荧光寿命和光致荧光特征的影响.研究结果表明：Y共掺杂导致1530nm附近的吸收峰宽化，对Er³⁺的吸收起到了一定的增强作用，并且这种宽化作用随着Er关键词： Er/Y共掺玻璃 光致荧光 荧光寿命